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1. 发明专利

JPH11274036A Charged beam drawing apparatus 失效
标题翻译：充电光束绘图设备
公开(公告)号：JPH11274036A
公开(公告)日：1999-10-08
申请号：JP7388898
申请日：1998-03-23
申请人： Toshiba Corp , 株式会社東芝
发明人： HARA SHIGEHIRO , MURAKAMI EIJI , HIGURE HITOSHI , OKUZONO KAZUYUKI , YAMAGUCHI TOSHIO , MATSUKI KAZUTO , KOIKARI SOUJI , TAMAMUSHI SHUICHI
IPC分类号： H01J37/147 , G03F7/20 , H01J37/302 , H01L21/027
CPC分类号： G03F7/704 , H01J37/3026 , H01J2237/3175
摘要： PROBLEM TO BE SOLVED: To perform multi-drawing where deflection boundary is shifted, without increasing the amount of drawing data. SOLUTION: In this electron beam drawing apparatus for drawing a desired pattern on the surface of a specimen through deflection of an electron beam by means of deflectors, a magnetic disk 31 where drawing data divided into a plurality of frames is stored, a pattern region extracting unit 41 for extracting the drawing data of a frame unit in order which are inputted from the magnetic disk 31, a pattern data dividing unit 42 for dividing the extracted data into pattern data whose size is at most subfield size which can be deflected by a subdeflector 23d having a minimum deflection width, and a pattern data memory 32 for temporarily storing divided pattern data is installed. Stripes where deflection boundary is shifted are constituted by using stored pattern data, and drawing is performed by every constituted stripe.
摘要翻译：要解决的问题：在不增加绘图数据量的情况下进行偏移边界偏移的多次绘图。解决方案：在用于通过偏转器偏转电子束在试样表面上画出期望图案的电子束描绘装置中，存储分割成多个帧的绘图数据的磁盘31，提取图形区域单元41，用于从磁盘31输入的顺序提取帧单元的绘图数据;图形数据分割单元42，用于将提取的数据划分为尺寸最大为子字段尺寸的图形数据，该尺寸可以由子反转器偏转 23d具有最小的偏转宽度，以及用于临时存储划分的图案数据的图案数据存储器32。通过使用存储的图案数据构成偏移边界偏移的条纹，并且通过每个构成的条纹进行绘制。

2. 发明专利

JPH1032188A CHARGED BEAM LITHOGRAPHY DEVICE 失效
公开(公告)号：JPH1032188A
公开(公告)日：1998-02-03
申请号：JP18747296
申请日：1996-07-17
申请人： TOSHIBA CORP
发明人： KOIKARI SOUJI , YAMAGUCHI TOSHIO , MATSUKI KAZUTO , TAMAMUSHI SHUICHI , HARA SHIGEHIRO , MURAKAMI EIJI
IPC分类号： H01J37/305 , G03F7/20 , H01J37/302 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To facilitate a subfield multiple lithography and a stripe multiple lithography by a method, wherein subfields are set independently of pattern data, whether or not which subfield of the subfields each graphic form is put in is decided and at the same tome, the largest size of the region which is occupies by groups of the small graphic forms constituting a pattern, is set within a difference or smaller between the sub-deflectable longest width of the largest size and the lattice period of the subfields. SOLUTION: Each graphic form is positioned on a prescribed subfield by a main deflector 15, the positioning of the drawing position of the graphic from within the subfield is performed by a sub-deflector 16 and at the same time, the shape of a beam is controlled by a beam dimension variable deflector 14, and beam molding apertures 17 and 18 and the subfield is subjected to a lithography processing while a stage 3 is continuously moved in one direction. Moreover, when a screwing of stripes which are respectively an aggregate of a plurality of the subfields ends, the stage 3 is step- moved in the direction orthogonally intersecting the continuous moving direction of the stage 3, and this processing is repeated for drawing each stripe region in order. Thereby, the subfield can be drawn using efficient pattern data without making the subfields overlap with each other.

3. 发明专利

JPH09260240A CHARGED-BEAM EXPOSURE DEVICE 失效
公开(公告)号：JPH09260240A
公开(公告)日：1997-10-03
申请号：JP6137196
申请日：1996-03-18
申请人： TOSHIBA CORP
发明人： OGASAWARA MUNEHIRO , TAKAMATSU JUN , KOIKARI SOUJI
IPC分类号： G03F7/20 , H01J37/305 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To make it possible to obtain the full amount of deflection of a charged beam by a deflection amplifying means even if the amount of deflection of the charged beam, which is deflected by a deflecting means single-handedly, is a small quantity by a method wherein the amount of deflection of the charged beam deflected by the deflecting means is amplified by the deflection amplifying means. SOLUTION: An electron beam 5 deflected by a deflector 1 is further deflected by the work of a lens 2 so as to pass through the front focal position 6 of a lens 3 and thereafter, the orbital of this deflected electron beam 5 is curved by the work of the lens 3 and a mask 4 is emitted almost vertically with the beam 5. Thereby, when the deflector 1 is assumed an electrostatic deflector, for example, the voltage, which is required for obtaining by this electrostatic deflector the same amount of deflection as that of deflection of the electron beam which is obtained by a conventional deflector, is obtained by only the amount of a voltage of a level of about half of the conventional voltage level. As a result, it becomes unnecessary to feed a high- level and high-frequency voltage to an electrode with good accuracy. Accordingly, an electron-beam exposure device, which extends easily the scanning region of the beam 5 and has a throughput higher than that of a conventional electron-beam exposure device, can be realized.

4. 发明专利

JPH09260238A CHARGED PARTICLE BEAM EQUIPMENT 失效
公开(公告)号：JPH09260238A
公开(公告)日：1997-10-03
申请号：JP6878996
申请日：1996-03-25
申请人： TOSHIBA CORP
发明人： KOIKARI SOUJI , TAMAMUSHI SHUICHI , YOSHITAKE HIDESUKE , OGASAWARA MUNEHIRO
IPC分类号： H01L21/027 , H01J37/153
摘要： PROBLEM TO BE SOLVED: To enable eliminating not only curved image surface aberration but also various kinds of aberrations due to an electron beam optical system, and setting deviation of a focal surface within an allowable range without thinning an electron beam. SOLUTION: In this equipment, a mask 1 for electron beam exposure is scanned with an electron beam, the transmitted electron beam is imaged on a specimen surface 7 with an electromagnetic lenses 2, 3 and deflected with electromagnetic deflecters 4, 5, and a pattern on the mask 1 is transfered on the specimen surface. In this case, the sum of the various kinds of aberrations due to the deflectors 4, 5 and the various kinds of aberrations due to the lenses 2, 3 is set to be always zero on the specimen surface 7 on which an electron beam 6 is casted, by dynamically controlling the deflecters 4, 5 synchronizing with the positions of the electron beam cast on the mask 1.

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