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1. 发明专利

JPH09306805A PATTERN FORMING METHOD 失效
公开(公告)号：JPH09306805A
公开(公告)日：1997-11-28
申请号：JP11791596
申请日：1996-05-13
申请人： TOSHIBA CORP
发明人： TOKAWA IWAO , HARA SHIGEHIRO , OGAWA YOJI , INOUE SOICHI
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To form a symmetrical pattern in the accuracy higher than the conventional accuracy by a method wherein the symmetrical pattern is symmetrically divided based on exposure pattern data, and a variable forming beam, which corresponds to the pattern of each divided part, is formed. SOLUTION: Resist is applied to the light-shielding film formed on a quartz substrate, they are baked and set on a variable forming electron beam (VSB) aligner. Then, the stripe-like region, determined by the maximum deflection width of the beam, is successively exposed by continuously moving the stage where blanks are mounted, and the desired region is exposed. Pertaining to the pattern which is spread over a cell array region among exposure pattern data, the pattern is symmetrically divided, a variably shaped beam, corresponding to the pattern of divided parts 1 to 6, is formed and an exposing operation is conducted using said variably-shaped beam. An exposing operation is conducted by providing symmetrical shot division.

2. 发明专利

JPH09293667A FORMATION OF PATTERN AND PATTERN FORMING DEVICE 失效
公开(公告)号：JPH09293667A
公开(公告)日：1997-11-11
申请号：JP10743996
申请日：1996-04-26
申请人： TOSHIBA CORP
发明人： INOUE SOICHI , TOKAWA IWAO , OGAWA YOJI , HARA SHIGEHIRO , YAMAMOTO KAZUKO
IPC分类号： H01L21/027 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To utilize positional information on a region, which requires high dimensional accuracy, to achieve the high drawing accuracy of the region as a result. SOLUTION: This pattern forming method is a method wherein a beam obtainable by molding an electron beam into an arbitrary form is positioned, exposure of shots, which irradiate the beam for a prescribed time, is repeated and these shots are linked together, whereby an exposure region of a desired patterned form is formed on a photosensitive material film on a substrate. In this case, the linking-together of a plurality of the shots 13 constituting the exposure region is conducted at a position to correspond to an element isolation region of a semiconductor device and these shots are linked together to form gate patterns 16.

3. 发明专利

JPH07307262A METHOD AND APPARATUS FOR CHARGED PARTICLE LITHOGRAPHY 失效
公开(公告)号：JPH07307262A
公开(公告)日：1995-11-21
申请号：JP14454994
申请日：1994-06-27
申请人： TOSHIBA CORP
发明人： HARA SHIGEHIRO , UMAGOE TOSHIYUKI , KOYAMA KIYOMI , IKENAGA OSAMU
IPC分类号： H01L21/027
摘要： PURPOSE:To exhibit the effect of a CP lithography method sufficiently and realize the lithography whose throughput is significantly high by a method wherein the stage speeds of the respective combinations of candidate cells are calculated from the lithography time by a variable forming beam only and the reduced lithography times which are obtained when the respective candidate cells are characterized and the lithography time is introduced from the respective stage speeds. CONSTITUTION:Lithpgraphy time required to plot the sample areas by using basic pattern apertures only and respective reduced time when respective candidate cells are characterized and plotted are obtained for all the sample areas. Then the sum of the reduced time corresponding to all the combinations formed by the respective candidate cells in aperture masks 36 are deducted from the lithography time to calculate the lithography time in respective sample areas. The frame lithography time is obtained from the lithography time of the sample area which shows the longest lithography time in that frame. The combination of the candidate cells which offers the shortest lithography time in the whole lithography region is formed on the aperture mask 36.

4. 发明专利

JP2000252186A REFLECTION-TYPE CHARGED PARTICLE-BEAM LITHOGRAPHY SYSTEM 失效
公开(公告)号：JP2000252186A
公开(公告)日：2000-09-14
申请号：JP4996099
申请日：1999-02-26
申请人： TOSHIBA CORP
发明人： HATTORI SEIJI , HARA SHIGEHIRO , TSUCHIYA HIDEO , YOSHITAKE HIDESUKE
IPC分类号： H01L21/027 , G03F7/20 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To provide a reflection mask-type charged particle beam exposure system, where a mask and a sample table stage are kept horizontal in position, and exposure can be easily controlled. SOLUTION: This reflection-type charged particle beam lithography system is equipped with an electron optics system, where electrons reflected from a mask 217 are bent by an angle of 180 deg. with a projection optics system 216 to be projected onto the surface of a example 219 as reduced in size, a mask stage 218 and an example table stage 220 are kept horizontal in position and prevented from deteriorating in traveling accuracy. The projection optics system 216 is of two-staged structure, by which the surface of the sample 219 is irradiated at a right angle with electrons reflected from a mask 217 which is face down. Since the projection optics system 216 is structured as mentioned, the mask 217 and the sample pad stage 220 can be structured so as to move horizontally. A current density control mechanism capable of controlling light exposure is provided on the side of an illuminating optics system 215.

5. 发明专利

JP2005079392A Method for generating image drawing data 审中-公开
标题翻译：生成图像数据的方法
公开(公告)号：JP2005079392A
公开(公告)日：2005-03-24
申请号：JP2003309139
申请日：2003-09-01
申请人： Toshiba Corp , Toshiba Mach Co Ltd , 東芝機械株式会社 , 株式会社東芝
发明人： HARA SHIGEHIRO , HIGURE HITOSHI , MURAKAMI EIJI , OGAWA YOJI , TSUCHIYA SEIICHI , KASAHARA ATSUSHI
IPC分类号： G03F1/20 , G03F1/68 , G03F7/20 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a method capable of preventing a step difference between patterns from being unnecessarily too small or too large after division of an image so as to reduce an image drawing time and enhance the image drawing accuracy in the case of generating image drawing data from design data. SOLUTION: In the image drawing data generating method wherein a pattern 11 with a slope whose angle is an optional angle other than an integer multiple of 45 degrees in the design data is slit into patterns 12 with a rectangle or a trapezoid with a slope with an angle of 45 degrees to generate the image drawing data, the direction of slit division and the kind of division graphics are specified in response to the optional angle and the division width is determined so that step differences between adjacent patterns after slit division are within a prescribed permissible range. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种能够防止图案之间的步进差异在分割图像之后不必要地太小或太大以致于减少图像绘制时间并提高图像绘制精度的方法从设计数据生成图像绘图数据。解决方案：在图形绘制数据生成方法中，其中在设计数据中具有角度为45度的整数倍以外的角度的斜率的图案11被切成具有矩形或梯形的图案12，以45度的角度倾斜以产生图像绘制数据，响应于可选角度来指定狭缝分割的方向和分割图形的种类，并且确定分割宽度，使得狭缝分割之后的相邻图案之间的阶梯差为在规定的允许范围内。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2001015415A CHARGED PARTICLE BEAM TRANSFER APPARATUS OF REFLECTING TYPE 失效
公开(公告)号：JP2001015415A
公开(公告)日：2001-01-19
申请号：JP18653899
申请日：1999-06-30
申请人： TOSHIBA CORP
发明人： TSUCHIYA HIDEO , YOSHITAKE HIDESUKE , HATTORI SEIJI , HARA SHIGEHIRO
IPC分类号： H01L21/027 , G03F1/20 , G03F7/20 , G03F9/00 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To precisely and speedily transfer a pattern by providing an accurate alignment system suitable to a charged particle beam exposure device of a reflection type. SOLUTION: A reflection-type pattern transfer apparatus, having a beam source for radiating charged particle beams, a first stage for mounting a mask 103 and a second stage for mounting a wafer provides a accurate alignment method for reflecting to the control of a wafer stage 105 and a mask stage 104. Since accurate alignment can be executed by the reflection-type pattern transfer device, the transfer device of high throughput can be provided through the use of a mask for the charged particle beam exposure of the reflection type.

7. 发明专利

JP2000260683A APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000260683A
公开(公告)日：2000-09-22
申请号：JP5855799
申请日：1999-03-05
申请人： TOSHIBA CORP
发明人： YOSHITAKE HIDESUKE , TSUCHIYA HIDEO , HATTORI SEIJI , MUROOKA KENICHI , HARA SHIGEHIRO
IPC分类号： H01L21/027 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a semiconductor device which uses a charged particle beam reduction transfer optical system in vacuum or an atmosphere under reduced pressure, is provided with a high-speed and high-rigidity stage and can precisely transfer a circuit pattern written on a mask onto a wafer. SOLUTION: This apparatus for manufacturing a semiconductor device has a heat sink 10 for cooling a sliding section transferring force from a driving source to stages by friction and the driving source in a stage mechanism for driving the stages 17, 1 provided with means 19, 3 for holding a wafer 18 or a mask 2 by using a friction drive mechanism in vacuum or an atmosphere under reduced pressure. Further, there is provided a heater 5 for making a sample and the holding means to a required temperature according to a temperature sensor 4 provided on the means for holding a wafer 18 or a mask 2.

8. 发明专利

JP2000021747A METHOD OF CHARGED-BEAM DRAWING 失效
公开(公告)号：JP2000021747A
公开(公告)日：2000-01-21
申请号：JP19951198
申请日：1998-06-30
申请人： TOSHIBA CORP
发明人： MURAKAMI EIJI , HARA SHIGEHIRO , HIGURE HITOSHI
IPC分类号： G03F1/76 , G03F7/20 , H01J37/305 , H01J37/317 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To determine optimum stage movement speed that is free from drawing error for each frame region by defining stage movement speed for drawing of a frame region by the slowest speed among block drawing speeds of block units that are extracted from a specified number of continuing small regions. SOLUTION: A frame region is divided, starting from its frame origin, into small regions of specified widths, and drawing time for each is obtained. Then, a specified number of small regions continuously positioned from a starting one are extracted from block units to form a block (S3). In the next step, drawing time for each block is obtained, and is denoted as the block drawing time (S4). After the final small region is extracted (S7), speed calculation is performed (S9). This speed calculation is done by dividing the block width by the longest time among the block drawing times. This calculated speed is adopted as the stage movement speed for drawing process of the frame region.

9. 发明专利

JPH10261568A METHOD FOR PREPARING CHARGED BEAM LITHOGRAPHY DATA 失效
公开(公告)号：JPH10261568A
公开(公告)日：1998-09-29
申请号：JP6514997
申请日：1997-03-18
申请人： TOSHIBA CORP
发明人： MURAKAMI EIJI , HIGURE HITOSHI , HARA SHIGEHIRO , KOYAMA KIYOMI , ABE TAKAYUKI
IPC分类号： G03F1/20 , G03F1/68 , H01J37/302 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To reduce data without increasing conversion time from the design data of lithography data that are supplied to an electron beam lithography device. SOLUTION: A method is a technique for drawing a pattern using an electron beam lithography device in multiple-stage polarization system with a main polarizer 33 and sub polarizer 34 and electron beam data are prepared to prepare lithography data from design data. At this time, before a pattern with a size exceeding the minimum sub polarization scanning region size is divided when preparing sub polarization data, the pattern with this size is divided into a pattern that is equal to or less than the polarization scanning region size and is expressed before preparing the sub-polarization lithography data. Also, after an overwrapping cell array existing in the design data is changed to the structure of a non-overwrapping cell array, a hierarchical figure operation processing and a format processing are performed.

10. 发明专利

JP2003289039A Pattern forming method and pattern forming device 有权
标题翻译：图案形成方法和图案形成装置
公开(公告)号：JP2003289039A
公开(公告)日：2003-10-10
申请号：JP2003127127
申请日：2003-05-02
申请人： Toshiba Corp , 株式会社東芝
发明人： INOUE SOICHI , TOKAWA IWAO , OGAWA YOJI , HARA SHIGEHIRO , YAMAMOTO KAZUKO
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To expose a specific region with high dimension precision, and to expose the other region with high position precision in accordance with the combination of a single shot and multiple exposure.
SOLUTION: In a pattern forming method for positioning electronic beams formed in arbitrary shapes, and for repeating shot exposure by performing irradiation in a prescribed time to form an exposure region with a desired pattern shape on a photosensitive material film on a substrate as a group of shots, a region A to which high dimension precision is requested is exposed by a single shot, and a region C to which high position precision is requested is repeatedly exposed by at least two times of shots.
COPYRIGHT: (C)2004,JPO

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