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1. 发明专利

JP2012204434A Organic molecular memory 有权
标题翻译：有机分子记忆
公开(公告)号：JP2012204434A
公开(公告)日：2012-10-22
申请号：JP2011065295
申请日：2011-03-24
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIZAWA HIDEYUKI , YOSHIMURA REIKO , TADA TSUKASA , HATTORI SHIGEKI , TERAI KATSUYA , MIKOSHIBA SATOSHI , ASAKAWA KOUJI
IPC分类号： H01L51/05 , H01L21/336 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L27/28 , H01L29/788 , H01L29/792 , H01L45/00 , H01L51/30 , H01L51/40
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , G11C2213/53 , H01L45/1233 , H01L45/1253 , H01L51/0078 , H01L51/0092 , H01L51/0098 , H01L51/0595
摘要： PROBLEM TO BE SOLVED: To provide an organic molecular memory with an excellent charge retaining characteristic.SOLUTION: An organic molecular memory according to one embodiment comprises: a first conductive layer; a second conductive layer; and an organic molecule layer provided between the first conductive layer and the second conductive layer, and including a charge storage type molecular chain or a resistance change type molecular chain, the charge storage type molecular chain or the resistance change type molecular chain including a condensed polycyclic group.
摘要翻译：要解决的问题：提供具有优异的电荷保持特性的有机分子存储器。解决方案：根据一个实施方案的有机分子存储器包括：第一导电层; 第二导电层; 以及设置在第一导电层和第二导电层之间的有机分子层，并且包括电荷存储型分子链或电阻变化型分子链，电荷存储型分子链或电阻变化型分子链包括缩合多环组。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2010077063A Photosensitive composition and pattern formation method using the same 有权
标题翻译：使用它的光敏组合物和图案形成方法
公开(公告)号：JP2010077063A
公开(公告)日：2010-04-08
申请号：JP2008246448
申请日：2008-09-25
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMADA ARISA , HATTORI SHIGEKI
IPC分类号： C07C39/12 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an alkali-developable photosensitive composition having high sensitivity and high resolution.
SOLUTION: The photosensitive composition contains a solvent and a matrix compound which is an amorphous (2-hydroxyphenyl)diphenylmethanol derivative, e.g. 4-(4'''-{2-[hydroxy-(2-hydroxyphenyl)-phenyl-methyl]}[1,1';4', 1'']biphenyl)-(2-hydroxyphenyl)-phenyl-methanol or a compound of the formula.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有高灵敏度和高分辨率的碱显影性光敏组合物。光敏组合物含有溶剂和作为无定形（2-羟基苯基）二苯基甲醇衍生物的基质化合物，例如， 4-（4“' - [2-羟基 - （2-羟基苯基） - 苯基 - 甲基]} [1,1'; 4'，1”]联苯） - （2-羟基苯基） - 苯基 - 甲醇或式的化合物。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2013073974A Method of forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：JP2013073974A
公开(公告)日：2013-04-22
申请号：JP2011209918
申请日：2011-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAMURA HIROKO , TANAKA SATOSHI , MIKOSHIBA SATOSHI , HIENO ATSUSHI , HATTORI SHIGEKI
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a pattern which allows for a microphase separation pattern of fine block copolymer.SOLUTION: A method of forming a pattern includes: forming on a processing target film 11 a guide pattern that a first surface energy adjustment layer 12c and a second surface energy adjustment layer 12d having different surface energies are alternately arranged parallel to each other; forming a block copolymer layer 13 containing first and second block chains on the guide pattern; and orienting block polymer on the basis of the guide pattern by subjecting the block polymer to microphase separation. The first surface energy adjustment layer 12c has a surface energy substantially the same as the first block chain. The second surface energy adjustment layer 12d has a surface energy substantially the same as the second block chain. The period of the guide pattern is an integral multiple of three or more of the cycle of the block polymer. The width of each of the first surface energy adjustment layer 12c and the second surface energy adjustment layer 12d is an odd number multiple of three or more of the half period of the block copolymer.
摘要翻译：要解决的问题：提供一种形成允许微细嵌段共聚物的微相分离图案的图案的方法。解决方案：形成图案的方法包括：在处理目标薄膜11上形成具有不同表面能的第一表面能量调节层12c和第二表面能量调节层12d彼此平行的引导图案 ; 在引导图案上形成含有第一和第二嵌段链的嵌段共聚物层13; 并且通过使嵌段聚合物进行微相分离，基于引导图案取向嵌段聚合物。第一表面能量调节层12c具有与第一块链基本相同的表面能。第二表面能量调节层12d具有与第二块链基本相同的表面能。引导图案的周期是嵌段聚合物的三个或更多个周期的整数倍。第一表面能量调整层12c和第二表面能量调整层12d的宽度是嵌段共聚物的半周期的三倍以上的奇数倍。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012104675A Nonvolatile semiconductor memory device and manufacturing method of the same 有权
标题翻译：非线性半导体存储器件及其制造方法
公开(公告)号：JP2012104675A
公开(公告)日：2012-05-31
申请号：JP2010252381
申请日：2010-11-10
申请人： Toshiba Corp , 株式会社東芝
发明人： HATTORI SHIGEKI , ICHIHARA REIKA , TERAI KATSUYA , NISHIZAWA HIDEYUKI , TADA TSUKASA , ASAKAWA KOUJI , FUKUYA HIROYUKI , MIKOSHIBA SATOSHI , FUKUZUMI YOSHIAKI , AOCHI HIDEAKI
IPC分类号： H01L27/115 , H01L21/336 , H01L21/8247 , H01L27/10 , H01L27/28 , H01L29/788 , H01L29/792 , H01L51/05 , H01L51/30 , H01L51/40
CPC分类号： H01L29/513 , H01L21/02118 , H01L21/02227 , H01L21/28282 , H01L27/11556 , H01L27/1157 , H01L27/11573 , H01L27/11582 , H01L51/0591
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which improves integration density and a manufacturing method of the nonvolatile semiconductor memory device.SOLUTION: According to an embodiment, a nonvolatile semiconductor memory device is provided which includes a first laminate structure, a first semiconductor layer, a first organic film, a first semiconductor side insulator film, and a first electrode side insulator film. The first laminate structure has multiple first electrode films laminated along a first direction and first inter-electrode insulator films provided between the multiple first electrode films. The first semiconductor layer faces side surfaces of the multiple first electrode films. The first organic film is provided between the side surfaces of the multiple first electrode films and the first semiconductor layer and includes an organic compound. The first semiconductor side insulator film is provided between the first organic film and the first semiconductor layer. The first electrode side insulator film is provided between the first organic film and the side surfaces of the multiple first electrode films.
摘要翻译：解决的问题：提供提高集成密度的非易失性半导体存储器件和非易失性半导体存储器件的制造方法。解决方案：根据一个实施例，提供一种包括第一层压结构，第一半导体层，第一有机膜，第一半导体侧绝缘膜和第一电极侧绝缘膜的非易失性半导体存储器件。第一层压结构具有沿着第一方向层叠的多个第一电极膜和设置在多个第一电极膜之间的第一电极间绝缘膜。第一半导体层面对多个第一电极膜的侧表面。第一有机膜设置在多个第一电极膜和第一半导体层的侧表面之间并且包括有机化合物。第一半导体侧绝缘膜设置在第一有机膜和第一半导体层之间。第一电极侧绝缘膜设置在第一有机膜和多个第一电极膜的侧表面之间。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2008076850A Photosensitive composition and pattern forming method using the same 有权
标题翻译：使用它的光敏组合物和图案形成方法
公开(公告)号：JP2008076850A
公开(公告)日：2008-04-03
申请号：JP2006257290
申请日：2006-09-22
申请人： Toshiba Corp , 株式会社東芝
发明人： HATTORI SHIGEKI , SAITO SATOSHI
IPC分类号： G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a photosensitive composition conforming to a request of forming a finer pattern, improving resolution and solving problems such as edge roughness, and to provide a pattern forming method using the composition. SOLUTION: The photosensitive composition contains a compound having a truxene skeleton expressed by general formula (I) and a photoacid generator that generates an acid by the effect of UV rays or ionization radiation. In formula (I), each of X and R represents a monovalent organic group selected from a group composed of hydrogen, substituted or unsubstituted alkyl groups, substituted or unsubstituted alkoxy groups and substituted or unsubstituted aromatic groups, and X and R can be identical or different from each other; and each of l, m, n represents an integer of 1 to 4. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种符合形成更精细图案的要求的光敏组合物，提高分辨率和解决诸如边缘粗糙度的问题，并提供使用该组合物的图案形成方法。光敏组合物含有具有由通式（I）表示的三堇骨架的化合物和通过紫外线或电离辐射产生酸的光酸产生剂。在式（I）中，X和R各自表示选自由氢，取代或未取代的烷基，取代或未取代的烷氧基和取代或未取代的芳基组成的组的一价有机基团，X和R可以相同或相同，彼此不同; 并且每个m，n表示1〜4的整数。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2013072896A Pattern formation method 有权
标题翻译：模式形成方法
公开(公告)号：JP2013072896A
公开(公告)日：2013-04-22
申请号：JP2011209850
申请日：2011-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： HIENO ATSUSHI , HATTORI SHIGEKI , NAKAMURA HIROKO , MIKOSHIBA SATOSHI , ASAKAWA KOUJI , SUGANO MASAHIRO , KIYONO YURIKO , AZUMA TSUKASA
IPC分类号： G03F7/11 , G03F7/26 , G03F7/36 , H01L21/027
CPC分类号： G03F7/40 , B32B7/04 , B32B2307/40 , B82Y30/00 , G03F7/0002 , G03F7/004 , G03F7/0751 , G03F7/0752 , G03F7/11 , G03F7/165 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To provide a pattern formation method for easily controlling orientation of a block copolymer and forming a fine pattern in a shorter time by using microphase separation of the block copolymer.SOLUTION: A pattern formation method includes processes of: forming a heat crosslinkable molecular layer 12 by applying heat crosslinkable molecules onto a substrate 11; forming a photosensitive polymer layer 17 by applying photosensitive polymers onto the heat crosslinkable molecular layer 12; adhering the heat crosslinkable molecular layer 12 and the photosensitive polymer layer 17 by a crosslinking reaction caused by heating; forming a photosensitive polymer pattern having exposed parts and unexposed parts by selectively exposing the photosensitive polymer layer 17; and forming a block copolymer layer 14 including first and second block chains on the photosensitive polymer layer 17, performing micro-phase separation of the block copolymer layer, and forming a pattern of the first and second block chains on the basis of a surface energy of the polymer layer 13.
摘要翻译：解决问题的方法：通过使用嵌段共聚物的微相分离，提供容易控制嵌段共聚物取向并在较短时间内形成精细图案的图案形成方法。解决方案：图案形成方法包括以下工艺：通过将热交联分子施加到基底11上而形成热交联分子层12; 通过将光敏聚合物涂覆在热交联性分子层12上形成光敏聚合物层17; 通过加热引起的交联反应使热交联性分子层12和感光性聚合物层17粘接; 通过选择性地曝光光敏聚合物层17，形成具有曝光部分和未曝光部分的光敏聚合物图案; 并在感光性聚合物层17上形成包含第一和第二嵌段链的嵌段共聚物层14，进行嵌段共聚物层的微相分离，基于第一和第二嵌段链的表面能形成第一和第二嵌段链的图案聚合物层13.版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2012033534A Pattern formation method and polymer alloy substrate material 有权
标题翻译：图案形成方法和聚合物基体材料
公开(公告)号：JP2012033534A
公开(公告)日：2012-02-16
申请号：JP2010169279
申请日：2010-07-28
申请人： Toshiba Corp , 株式会社東芝
发明人： HATTORI SHIGEKI , ASAKAWA KOUJI , NAKAMURA HIROKO , KITAGAWA RYOTA , KIYONO YURIKO , SUGANO MASAHIRO , HIGA MOMOKA
IPC分类号： H01L21/027 , B82B3/00 , G03F7/26 , G03F7/40 , G03F7/42 , H01L21/312
CPC分类号： H01L21/3081 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/0337
摘要： PROBLEM TO BE SOLVED: To provide a pattern formation method capable of forming a pattern having a high orientation and a phase-separated structure on a polymer alloy in a short time.SOLUTION: The pattern formation method includes the steps of: laminating a self-assembled monolayer and a polymer film on a substrate; chemically bonding the polymer film to the self-assembled monolayer with an irradiation of an energy ray, thereby forming a polymer surface layer on the self-assembled monolayer; and forming a polymer alloy having a pattern of a phase-separated structure on the polymer surface layer.
摘要翻译：要解决的问题：提供能够在短时间内在聚合物合金上形成具有高取向和相分离结构的图案的图案形成方法。解决方案：图案形成方法包括以下步骤：在基底上层叠自组装单层和聚合物膜; 通过照射能量射线将聚合物膜化学键合到自组装单层，从而在自组装单层上形成聚合物表面层; 并在聚合物表面层上形成具有相分离结构图案的聚合物合金。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2013201356A Exposure method and pattern formation method 审中-公开
标题翻译：曝光方法和图案形成方法
公开(公告)号：JP2013201356A
公开(公告)日：2013-10-03
申请号：JP2012069749
申请日：2012-03-26
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAMURA HIROKO , FUKUHARA KAZUYA , HATTORI SHIGEKI , HIENO ATSUSHI , KIYONO YURIKO , SUGANO MASAHIRO
IPC分类号： H01L21/027 , G03F7/40
摘要： PROBLEM TO BE SOLVED: To provide a pattern formation method for forming a guide with high accuracy and obtaining a desired micro phase separation pattern.SOLUTION: A pattern formation method according to an embodiment comprises the steps of: irradiating a photo mask where a periodic pattern having openings whose centers are arranged so as to be capable of being described with a two-dimensional hexagonal lattice is formed, with illumination light; and performing exposure by projecting diffraction light from the photo mask on a substrate through a projection optical system. The illumination has first to third light emitting regions. The photo mask has a first opening and second to seventh openings whose center positions are at vertex positions of a regular hexagon whose center position is at the position of the first opening. A direction in which the illumination light enters the photo mask is on three planes determined by the first opening, the second, fourth, and sixth openings, and optical axis; and includes a direction inclined at an angle sin(2 λ/3 Pn) to the optical axis, where λ is a wavelength of the light, P is an on-substrate reduced value of an interval between the center of the first opening and the centers of the second to seventh openings, and n is a refraction index of a medium between the projection optical system and the substrate.
摘要翻译：要解决的问题：提供一种用于高精度地形成导向件并获得所需的微相分离图案的图案形成方法。解决方案：根据实施例的图案形成方法包括以下步骤：照射周期性图案具有开口，其中心布置成能够用二维六边形格子描述;具有照明光; 并且通过投影光学系统将来自光掩模的衍射光投射到基板上来进行曝光。照明具有第一至第三发光区域。光掩模具有第一开口和第二至第七开口，其中心位置处于其中心位置处于第一开口位置的正六边形的顶点位置。照明光进入光掩模的方向在由第一开口，第二，第四和第六开口以及光轴确定的三个平面上; 并且包括相对于光轴以角度sin（2λ/ 3Pn）倾斜的方向，其中λ是光的波长，P是第一开口的中心与第一开口之间的间隔的基板上的减小值第二至第七开口的中心，n是投影光学系统和基板之间的介质的折射率。

9. 发明专利

JP2013197363A Nonvolatile semiconductor memory device and method for manufacturing the same 审中-公开
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：JP2013197363A
公开(公告)日：2013-09-30
申请号：JP2012063653
申请日：2012-03-21
申请人： Toshiba Corp , 株式会社東芝
发明人： MOROTA MISAKO , NISHIZAWA HIDEYUKI , HATTORI SHIGEKI , TERAI KATSUYA , ASAKAWA KOUJI
IPC分类号： H01L21/336 , H01L21/8247 , H01L27/115 , H01L27/28 , H01L29/788 , H01L29/792 , H01L51/05 , H01L51/30 , H01L51/40
CPC分类号： H01L29/788 , G11C13/0014 , G11C2213/18 , G11C2213/71 , H01L21/28282 , H01L27/11582 , H01L29/4234 , H01L29/66825 , H01L29/66833 , H01L29/7926 , H01L51/0067 , H01L51/0591
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which is microfabricated by thinning a tunnel insulating film and a charge storage layer.SOLUTION: The nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; an organic molecular layer which is formed on the semiconductor layer and comprises a tunnel insulating part of an alkyl chain having one end coupled to the semiconductor layer, a charge storage part, and a coupling part coupling the other end of the alkyl chain and the charge storage part together; a block insulating film formed on the organic molecular layer; and a gate electrode formed on the block insulating film.
摘要翻译：要解决的问题：提供一种通过使隧道绝缘膜和电荷存储层变薄而微制造的非易失性半导体存储器件。解决方案：实施例的非易失性半导体存储器件包括：半导体层; 有机分子层，其形成在半导体层上，并且包括具有一端连接到半导体层的烷基链的隧道绝缘部分，电荷存储部分和将烷基链的另一端和电荷连接的耦合部分储存部分在一起; 形成在有机分子层上的块绝缘膜; 以及形成在所述块绝缘膜上的栅电极。

10. 发明专利

JP2012204433A Organic molecular memory 有权
标题翻译：有机分子记忆
公开(公告)号：JP2012204433A
公开(公告)日：2012-10-22
申请号：JP2011065294
申请日：2011-03-24
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIZAWA HIDEYUKI , HATTORI SHIGEKI , TERAI KATSUYA , MIKOSHIBA SATOSHI , ASAKAWA KOUJI , TADA TSUKASA
IPC分类号： H01L51/05 , H01L27/105 , H01L27/28 , H01L45/00 , H01L49/00 , H01L51/30
CPC分类号： H01L29/792 , B82Y10/00 , G11C13/0014 , G11C13/0016 , G11C2213/53 , H01L29/16 , H01L29/42348 , H01L29/513 , H01L29/517 , H01L29/518 , H01L51/0077 , H01L51/0092 , H01L51/0098 , H01L51/0591
摘要： PROBLEM TO BE SOLVED: To provide an organic molecular memory with an excellent charge retaining characteristic.SOLUTION: An organic molecular memory according to one embodiment comprises: a first conductive layer; a second conductive layer; and an organic molecule layer provided between the first conductive layer and the second conductive layer, and including a resistance change type molecular chain or a charge storage type molecular chain, the resistance change type molecular chain or the charge storage type molecular chain including an electron attractive group.

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