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1. 发明专利

JP2013197268A Nonvolatile semiconductor storage device 审中-公开
标题翻译：非易失性半导体存储器件
公开(公告)号：JP2013197268A
公开(公告)日：2013-09-30
申请号：JP2012062002
申请日：2012-03-19
申请人： Toshiba Corp , 株式会社東芝
发明人： TERAI KATSUYA , NISHIZAWA HIDEYUKI , ASAKAWA KOUJI
IPC分类号： H01L27/28 , G11C16/04 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , H01L51/05 , H01L51/30
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which improves reliability by including a charge generation layer between a semiconductor layer and a gate electrode, and charge storage layers which sandwich the charge generation layer.SOLUTION: A nonvolatile semiconductor storage device of an embodiment comprises: a semiconductor layer; a first insulation film formed on the semiconductor layer; a first charge storage layer which is formed on the first insulation film and includes a first organic molecule capable of storing an electric charge; a charge generation layer which is formed on the first insulation film and generates an electric charge upon application of an electric field; a second charge storage layer which is formed on the charge generation layer and includes a second organic molecule capable of storing an electric charge; a second insulation film formed on the second charge storage layer; and a gate electrode formed on the second insulation film.
摘要翻译：要解决的问题：提供一种通过在半导体层和栅电极之间包含电荷产生层以及夹着电荷产生层的电荷存储层来提高可靠性的非易失性半导体存储装置。解决方案：一种非易失性半导体存储装置，实施例包括：半导体层; 形成在所述半导体层上的第一绝缘膜; 第一电荷存储层，其形成在第一绝缘膜上，并且包括能够存储电荷的第一有机分子; 电荷产生层，其形成在第一绝缘膜上并在施加电场时产生电荷; 第二电荷存储层，其形成在电荷产生层上，并且包括能够存储电荷的第二有机分子; 形成在所述第二电荷存储层上的第二绝缘膜; 以及形成在所述第二绝缘膜上的栅电极。

2. 发明专利

JP2012104675A Nonvolatile semiconductor memory device and manufacturing method of the same 有权
标题翻译：非线性半导体存储器件及其制造方法
公开(公告)号：JP2012104675A
公开(公告)日：2012-05-31
申请号：JP2010252381
申请日：2010-11-10
申请人： Toshiba Corp , 株式会社東芝
发明人： HATTORI SHIGEKI , ICHIHARA REIKA , TERAI KATSUYA , NISHIZAWA HIDEYUKI , TADA TSUKASA , ASAKAWA KOUJI , FUKUYA HIROYUKI , MIKOSHIBA SATOSHI , FUKUZUMI YOSHIAKI , AOCHI HIDEAKI
IPC分类号： H01L27/115 , H01L21/336 , H01L21/8247 , H01L27/10 , H01L27/28 , H01L29/788 , H01L29/792 , H01L51/05 , H01L51/30 , H01L51/40
CPC分类号： H01L29/513 , H01L21/02118 , H01L21/02227 , H01L21/28282 , H01L27/11556 , H01L27/1157 , H01L27/11573 , H01L27/11582 , H01L51/0591
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which improves integration density and a manufacturing method of the nonvolatile semiconductor memory device.SOLUTION: According to an embodiment, a nonvolatile semiconductor memory device is provided which includes a first laminate structure, a first semiconductor layer, a first organic film, a first semiconductor side insulator film, and a first electrode side insulator film. The first laminate structure has multiple first electrode films laminated along a first direction and first inter-electrode insulator films provided between the multiple first electrode films. The first semiconductor layer faces side surfaces of the multiple first electrode films. The first organic film is provided between the side surfaces of the multiple first electrode films and the first semiconductor layer and includes an organic compound. The first semiconductor side insulator film is provided between the first organic film and the first semiconductor layer. The first electrode side insulator film is provided between the first organic film and the side surfaces of the multiple first electrode films.
摘要翻译：解决的问题：提供提高集成密度的非易失性半导体存储器件和非易失性半导体存储器件的制造方法。解决方案：根据一个实施例，提供一种包括第一层压结构，第一半导体层，第一有机膜，第一半导体侧绝缘膜和第一电极侧绝缘膜的非易失性半导体存储器件。第一层压结构具有沿着第一方向层叠的多个第一电极膜和设置在多个第一电极膜之间的第一电极间绝缘膜。第一半导体层面对多个第一电极膜的侧表面。第一有机膜设置在多个第一电极膜和第一半导体层的侧表面之间并且包括有机化合物。第一半导体侧绝缘膜设置在第一有机膜和第一半导体层之间。第一电极侧绝缘膜设置在第一有机膜和多个第一电极膜的侧表面之间。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2004279942A Optical recording medium 有权
公开(公告)号：JP2004279942A
公开(公告)日：2004-10-07
申请号：JP2003074121
申请日：2003-03-18
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUMOTO KAZUNORI , ICHIHARA KATSUTARO , HIRAO AKIKO , NISHIZAWA HIDEYUKI
IPC分类号： G03H1/18 , G03H1/02 , G11B7/0065 , G11B7/24 , G11B7/254 , G11B7/257
CPC分类号： G11B7/2578 , G11B7/0065 , G11B7/2403 , G11B7/24044 , G11B7/245 , G11B7/2467 , G11B7/2531 , G11B7/2542 , G11B7/2575 , G11B7/2585 , G11B2007/25706 , G11B2007/2571
摘要： PROBLEM TO BE SOLVED: To provide an optical recording medium of hologram type having excellent shell life without necessitating a cartridge.
SOLUTION: The optical recording medium 1 of hologram type is provided with a recording layer 3 on which information is recorded by utilizing holography and a light shielding layer 4a which is disposed opposite to one side main surface of the recording layer 3 and allows the transmissivity to increase in regard to recording light by enhancing the intensity of the recording light.
COPYRIGHT: (C)2005,JPO&NCIPI

4. 发明专利

JP2015038994A 不揮発性半導体記憶装置有权
标题翻译：非易失性半导体存储器件
公开(公告)号：JP2015038994A
公开(公告)日：2015-02-26
申请号：JP2014183130
申请日：2014-09-09
申请人：株式会社東芝 , Toshiba Corp
发明人： HATTORI SHIGEKI , ICHIHARA REIKA , TERAI KATSUYA , NISHIZAWA HIDEYUKI , TADA TSUKASA , ASAKAWA KOUJI , FUKUYA HIROYUKI , MIKOSHIBA SATOSHI , FUKUZUMI YOSHIAKI , AOCHI HIDEAKI
IPC分类号： H01L21/8247 , H01L21/336 , H01L27/10 , H01L27/115 , H01L27/28 , H01L29/788 , H01L29/792 , H01L45/00 , H01L49/00 , H01L51/05
摘要：【課題】3次元積層メモリにより集積度を向上させた不揮発性半導体記憶装置を提供する。【解決手段】揮発性半導体記憶装置は、第1積層構造体ML1と、第1半導体層SP1と、第1有機膜48p1と、第1半導体側絶縁膜42p1と、第1電極側絶縁膜43p1と、を備える。第1積層構造体ML1は、第1方向に沿って積層された複数の第1電極膜61aと、第1電極間絶縁膜43p1と、を有する。第1半導体層SP1は、複数の第1電極膜61aの側面に対向する。第1有機膜48p1は、複数の第1電極膜61aの側面と第1半導体層SP1との間に設けられ有機化合物を含む。第1半導体側絶縁膜42p1は、第1有機膜48p1と第1半導体層SP1との間に設けられる。第1電極側絶縁膜43p1は、第1有機膜48p1と複数の第1電極膜61aの側面との間に設けられる。第1有機膜48p1は、第1半導体側絶縁膜42p1と結合している。【選択図】図1
摘要翻译：要解决的问题：提供一种通过三维多层存储器提高整合度的非易失性半导体存储器件。解决方案：非易失性半导体存储器件包括第一多层结构ML1，第一半导体层SP1，第一有机膜48p1 第一半导体侧绝缘膜42p1和第一电极侧绝缘膜43p1。第一多层结构ML1具有沿着第一方向堆叠的多个第一电极膜61a和第一电极间绝缘膜62a。第一半导体层SP1面对多个第一电极膜61a的侧面。第一有机膜48p1设置在多个第一电极膜61a和第一半导体层SP1的侧表面之间，并且含有有机化合物。半导体侧绝缘膜42p1设置在第一有机膜48p1和第一半导体层SP1之间。第一电极侧绝缘膜43p1设置在第一有机膜48p1和多个第一电极膜61a之间。第一有机膜48p1耦合到第一半导体侧绝缘膜42p1。

5. 发明专利

JP2013197269A Nonvolatile semiconductor storage device 审中-公开
标题翻译：非易失性半导体存储器件
公开(公告)号：JP2013197269A
公开(公告)日：2013-09-30
申请号：JP2012062004
申请日：2012-03-19
申请人： Toshiba Corp , 株式会社東芝
发明人： HATTORI SHIGEKI , YAMAGIWA MASAKAZU , TERAI KATSUYA , NISHIZAWA HIDEYUKI , ASAKAWA KOUJI , FUKUZUMI YOSHIAKI
IPC分类号： H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L21/28273 , B82Y10/00 , G11C16/0416 , G11C16/0483 , H01L27/11556 , H01L29/42332 , H01L29/7881
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which has a wide memory window and a long data retention period.SOLUTION: A nonvolatile semiconductor storage device of an embodiment comprises: a semiconductor layer; a first insulation film formed on the semiconductor layer; a charge storage layer which is formed on the first insulation film and which has metal fine particles; a second insulation film formed on the charge storage layer; and a gate electrode formed on the second insulation film. A voltage is applied, in an operation of data writing, between the gate electrode and the semiconductor layer so as to cause the gate electrode to be relatively negative voltage and cause the charge storage layer to store positive charge.
摘要翻译：要解决的问题：提供一种具有宽的存储窗口和长的数据保存期的非易失性半导体存储装置。解决方案：一个实施例的非易失性半导体存储装置包括：半导体层; 形成在所述半导体层上的第一绝缘膜; 电荷存储层，其形成在第一绝缘膜上并具有金属微粒; 形成在电荷存储层上的第二绝缘膜; 以及形成在所述第二绝缘膜上的栅电极。在数据写入操作中，在栅电极和半导体层之间施加电压，使栅电极相对负电压，并使电荷存储层存储正电荷。

6. 发明专利

JP2013197196A Molecular memory 审中-公开
标题翻译：分子记忆
公开(公告)号：JP2013197196A
公开(公告)日：2013-09-30
申请号：JP2012060932
申请日：2012-03-16
申请人： Toshiba Corp , 株式会社東芝
发明人： ICHIKAWA HISASHI , NISHIZAWA HIDEYUKI
IPC分类号： H01L27/28 , G11C13/00 , H01L21/8247 , H01L27/115 , H01L45/00 , H01L49/00 , H01L51/05 , H01L51/30
摘要： PROBLEM TO BE SOLVED: To provide a molecular memory high in recording density.SOLUTION: A molecular memory according to an embodiment includes: a first electrode; a plurality of second electrodes arranged away from each other; and a plurality of functional molecular chains connected between the first electrode and each of the second electrodes and changing electrical characteristics thereof corresponding to an input signal.
摘要翻译：要解决的问题：提供记录密度高的分子记录。解决方案：根据实施方案的分子存储器包括：第一电极; 多个彼此远离布置的第二电极; 以及连接在第一电极和每个第二电极之间的多个功能分子链，并且与输入信号相对应地改变电特性。

7. 发明专利

JP2012191086A Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：JP2012191086A
公开(公告)日：2012-10-04
申请号：JP2011054855
申请日：2011-03-11
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMIZU TATSUO , ITO SATOSHI , NISHIZAWA HIDEYUKI
IPC分类号： H01L21/322 , B82Y10/00 , H01L21/265 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/78 , H01L29/788 , H01L29/792
CPC分类号： H01L29/775 , B82Y10/00 , H01L21/28273 , H01L29/66439 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having an interface termination structure stronger than hydrogen termination.SOLUTION: A semiconductor device comprises an insulating film and an Si semiconductor part. The insulating film is made from any of oxide, nitride, and oxynitride. The Si semiconductor part 202 is disposed under the insulating film, has at least one element of sulfur (S), selenium (Se), and tellurium (Te) present in an interface with the insulating film, and is made from silicon (Si).
摘要翻译：要解决的问题：提供具有比氢终端更强的界面终端结构的半导体器件。解决方案：半导体器件包括绝缘膜和Si半导体部件。绝缘膜由氧化物，氮化物和氮氧化物中的任一种制成。 Si半导体部件202配置在绝缘膜的下方，具有与绝缘膜的界面中存在的硫（S），硒（Se），碲（Te）的至少一种元素，由硅（Si）。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2012186365A Storage device and manufacturing method of the same 有权
标题翻译：存储器件及其制造方法
公开(公告)号：JP2012186365A
公开(公告)日：2012-09-27
申请号：JP2011049184
申请日：2011-03-07
申请人： Toshiba Corp , 株式会社東芝
发明人： ASAKAWA KOUJI , HATTORI SHIGEKI , NISHIZAWA HIDEYUKI , MIKOSHIBA SATOSHI , ICHIHARA REIKA , TERAI KATSUYA
IPC分类号： H01L27/105 , H01L27/28 , H01L45/00 , H01L49/00 , H01L51/05 , H01L51/30 , H01L51/40
CPC分类号： H01L51/0591 , G11C13/0014 , G11C13/003 , G11C2213/72 , G11C2213/73 , G11C2213/77
摘要： PROBLEM TO BE SOLVED: To provide a storage device which can achieve further microfabrication by optimizing a memory cell structure.SOLUTION: A storage device comprises: a plurality of first electrode lines; a plurality of second electrode lines crossing the first electrode lines; one via plug formed between one second electrode line and two first electrode lines adjacent to each other having a bottom surface facing the first electrode lines with the maximum diameter in a direction perpendicular to an extension direction of the first electrode line being less than a length of a sum of a width twice as long as a first electrode line width and a width between the first electrode lines; a first storage element formed between the via plug and one of the two first electrode lines; and a second storage element formed between the via plug and the other of the two first electrode lines.
摘要翻译：要解决的问题：提供一种可以通过优化存储单元结构来实现进一步微细加工的存储装置。解决方案：存储装置包括：多个第一电极线; 与第一电极线交叉的多个第二电极线; 一个通孔塞形成在一个第二电极线和彼此相邻的两个第一电极线之间，具有面向第一电极线的底表面，其中第一电极线的垂直于第一电极线的延伸方向的方向上的最大直径小于第一电极线的长度宽度为第一电极线宽度和第一电极线之间的宽度的两倍的宽度的总和; 形成在所述通孔插头和所述两个第一电极线中的一个之间的第一存储元件; 以及形成在所述通孔插头和所述两个第一电极线中的另一个之间的第二存储元件。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2010219407A Solar cell equipped with electrode having mesh structure, and manufacturing method of the same 审中-公开
标题翻译：具有电极结构的太阳能电池及其制造方法
公开(公告)号：JP2010219407A
公开(公告)日：2010-09-30
申请号：JP2009066146
申请日：2009-03-18
申请人： Toshiba Corp , 株式会社東芝
发明人： MASUNAGA KUMI , FUJIMOTO AKIRA , NAKANISHI TSUTOMU , TSUTSUMI EISHI , KITAGAWA RYOTA , ASAKAWA KOUJI , NISHIZAWA HIDEYUKI
IPC分类号： H01L31/042 , H01L21/28 , H01L31/04
CPC分类号： H01L31/0236 , H01L31/022433 , Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a solar cell which has both low resistance and high transmissivity and furthermore can efficiently utilize sunlight for excitation of a carrier and is equipped with a light incidence surface side electrode using inexpensive material, and to provide a method of manufacturing the solar cell.
SOLUTION: The solar cell is equipped with: a photoelectric conversion layer; a light incidence surface side electrode layer; and counter electrode layers. The light incidence surface side electrode layer is provided with a plurality of openings penetrating the light incidence surface side electrode layer, and a film thickness thereof is in a range of 10 nm or more and 200 nm or less, and an area per one opening of the openings is in a range of 80 nm
2 or more and 0.8 μm
2 or less, and numerical apertures of the openings are in a range of 10% or more and 66% or less, and at least a part of a light absorbing layer is arranged at a distance of 1 μm or less from a contact surface of the light incidence surface side electrode layer and the photoelectric conversion layer. The light incidence surface side electrode layer of this solar cell can be formed by etching using a single particle layer of fine particles or dot patterns of a self-organization of a block copolymer as a mask, or by utilizing a stamper.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种具有低电阻和高透射率的太阳能电池，并且还可以有效地利用阳光来激发载体，并且使用廉价的材料配备有光入射面侧电极，并且提供制造太阳能电池的方法。
解决方案：太阳能电池配备有：光电转换层; 光入射面侧电极层; 和对电极层。光入射面侧电极层设置有贯穿入射面侧电极层的多个开口，其膜厚在10nm以上且200nm以下的范围内，每1个开口面积开口在80nm 2 以上且0.8μm 2 以下的范围内，开口的数值孔径在10％以上且66以上的范围内％以下，并且光吸收层的至少一部分从光入射面侧电极层和光电转换层的接触面配置在1μm以下的距离处。该太阳能电池的光入射面侧电极层可以通过使用单粒子层或嵌段共聚物的自组织的点图案作为掩模或利用压模进行蚀刻来形成。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2010123646A Electric element, switching element, memory element, switching method, and memory method 审中-公开
标题翻译：电气元件，开关元件，存储器元件，切换方法和存储器方法
公开(公告)号：JP2010123646A
公开(公告)日：2010-06-03
申请号：JP2008294112
申请日：2008-11-18
申请人： Toshiba Corp , 株式会社東芝
发明人： OYASATO YUMIKO , NISHIZAWA HIDEYUKI , SANO KENJI
IPC分类号： H01L27/10 , G11C13/00 , H01L45/00 , H01L49/00 , H01L51/05 , H01L51/30
CPC分类号： G11C13/0069 , B82Y10/00 , G11C13/025 , G11C2013/009 , G11C2213/19 , G11C2213/72 , G11C2213/79 , H01L45/04 , H01L45/1233 , H01L45/149 , H03K19/02
摘要： PROBLEM TO BE SOLVED: To provide a newly constituted electric element which facilitates securement of a switching window, and is used for a resistive memory and other electric elements. SOLUTION: The electric element is constituted by providing: a pair of electrodes; and plural carbon nanotubes which present a three-dimensional network structure arranged between the pair of electrodes, wherein this electric element is utilized as a memory element or the like. COPYRIGHT: (C)2010,JPO&INPIT

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