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1. 发明专利

JP2010080685A Nonvolatile storage device and method for fabricating the same 审中-公开
标题翻译：非易失存储器件及其制造方法
公开(公告)号：JP2010080685A
公开(公告)日：2010-04-08
申请号：JP2008247549
申请日：2008-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIMIZU YASUTO , NAKAO TAKASHI , AISO FUMIKI , FUKUMOTO ATSUSHI
IPC分类号： H01L21/8247 , H01L21/768 , H01L23/522 , H01L27/10 , H01L27/105 , H01L27/115 , H01L29/788 , H01L29/792 , H01L45/00 , H01L49/00
CPC分类号： H01L27/11578 , H01L27/11582 , H01L27/2409 , H01L27/2481 , H01L29/792 , H01L29/7926 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile storage device reducing warpage in a substrate even in a structure with multiple lamination films, and to provide a method for fabricating the device.
SOLUTION: The nonvolatile storage device includes: the substrate; a plurality of insulating films and electrodes films, which are alternately laminated on the substrate, where through-holes penetrating in a laminating direction are formed; semiconductor peelers formed inside the through-holes; and charge storage layers arranged between at least the semiconductor peelers and the electrode films. The insulating films include films where either compressive stress or tensile stress appears. The electrode films include films where the other compressive stress or the tensile stress appears.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：即使在具有多层压膜的结构中，也提供一种降低基板翘曲的非易失性存储装置，并提供一种制造该装置的方法。非挥发性存储装置包括：基板; 交替层压在基板上的多个绝缘膜和电极膜，其中形成了沿层叠方向穿透的通孔; 形成在通孔内的半导体剥离器; 并且对至少半导体剥离器和电极膜之间布置的电荷存储层进行充电。绝缘膜包括出现压应力或拉应力的膜。电极膜包括出现其它压应力或拉应力的膜。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2013120786A Semiconductor storage device 审中-公开
标题翻译：半导体存储设备
公开(公告)号：JP2013120786A
公开(公告)日：2013-06-17
申请号：JP2011266996
申请日：2011-12-06
申请人： Toshiba Corp , 株式会社東芝
发明人： HIGUCHI MASAAKI , FUKUMOTO ATSUSHI
IPC分类号： H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7827 , H01L21/28008 , H01L27/11578 , H01L27/11582
摘要： PROBLEM TO BE SOLVED: To provide a highly-reliable semiconductor storage device.SOLUTION: According to an embodiment, a semiconductor storage device comprises: a substrate; a laminate having a plurality of electrode layers and a plurality of insulation layers which are alternately laminated on the substrate one by one; a cap film provided next to the electrode layer in a hole that penetrates the laminate; an insulation film provided on a sidewall of the cap film and including a charge storage film; and a channel body provided on a sidewall of the insulation film. The cap film includes a projection projecting toward the insulation film. The cap film has a thicker film thickness in a projection direction at a part where the projection is provided than a film thickness at another part where the projection is not provided.
摘要翻译：要解决的问题：提供高可靠性的半导体存储装置。解决方案：根据实施例，半导体存储装置包括：基板; 具有多个电极层和多个绝缘层的层压体，其一个接一个地交替层压在所述基板上; 在穿过层叠体的孔中的电极层附近设置的盖膜; 设置在所述盖膜的侧壁上并具有电荷存储膜的绝缘膜; 以及设置在绝缘膜的侧壁上的通道体。盖膜包括向绝缘膜突出的突起。在没有设置突起的另一部分，盖膜在设置突起部分的投影方向具有较厚的膜厚度。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2011198963A Nonvolatile semiconductor memory device, and method of manufacturing the same 审中-公开
标题翻译：非挥发性半导体存储器件及其制造方法
公开(公告)号：JP2011198963A
公开(公告)日：2011-10-06
申请号：JP2010063327
申请日：2010-03-18
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUMOTO ATSUSHI , AISO FUMIKI , NAKAO TAKASHI , KAI TETSUYA
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a highly integrated nonvolatile semiconductor memory device and a method of manufacturing the same.SOLUTION: The nonvolatile semiconductor memory device 1 includes: a laminate ML in which a plurality of insulating films 15 and electrode films 14 are alternately laminated; a silicon pillar 31 extending in a laminating direction of the insulating films 15 and the electrode films 14 in the laminate ML; and a charge storage layer 26 between the electrode film 14 and the silicon pillar 31. The silicon pillar 31 is provided with a peripheral part 41 provided along a full length of the silicon pillar 31 and composed of silicon containing impurity and a central part 42 provided along the full length of the silicon pillar 31 and constituted by silicon containing impurity and oxygen. An oxygen concentration in the central part 42 is made higher than the oxygen concentration in the peripheral part 41, and a composition of the central part 42 is SiO(0
摘要翻译：要解决的问题：提供一种高度集成的非易失性半导体存储器件及其制造方法。解决方案：非易失性半导体存储器件1包括：层叠ML，其中多个绝缘膜15和电极膜14交替层叠 ; 在绝缘膜15的层叠方向上延伸的硅柱31和层叠体ML中的电极膜14; 以及在电极膜14和硅柱31之间的电荷存储层26.硅柱31设置有沿着硅柱31的全长设置并由含硅杂质构成的周边部41和设置有中心部42的中心部42 沿着硅柱31的全长，并由含硅杂质和氧构成。使中心部分42的氧浓度高于周边部分41中的氧浓度，中心部分42的组成为SiO（0

4. 发明专利

JP2011171424A Film forming method, method for manufacturing semiconductor device, and semiconductor device 审中-公开
标题翻译：膜形成方法，制造半导体器件的方法和半导体器件
公开(公告)号：JP2011171424A
公开(公告)日：2011-09-01
申请号：JP2010032291
申请日：2010-02-17
申请人： Toshiba Corp , 株式会社東芝
发明人： AISO FUMIKI , NAKAO TAKASHI , FUKUMOTO ATSUSHI
IPC分类号： H01L21/205 , C23C16/24 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/8247 , H01L23/52 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a film forming method for forming a silicon film excellent in surface flatness, a method for manufacturing a semiconductor device, and a semiconductor device.
SOLUTION: A film forming method includes: a first film forming step of forming a first film on a substrate at a first temperature using at least one of disilane and trisilane; a temperature rising step of increasing the temperature of the substrate and the first film from the first temperature toward a second temperature higher than the first temperature in a hydrogen-containing atmosphere, and a second film forming step of forming a second film on the first film at the second temperature using silane after the temperature rising.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于形成表面平坦度优异的硅膜的成膜方法，半导体器件的制造方法和半导体器件。＆lt; P＆gt;解决方案：一种成膜方法，包括：第一膜形成步骤，使用乙硅烷和丙硅烷中的至少一种在第一温度下在基板上形成第一膜; 在含氢气氛中将衬底和第一膜的温度从第一温度升高到高于第一温度的第二温度的升温步骤，以及在第一膜上形成第二膜的第二膜形成步骤在第二温度下使用硅烷后升温。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2011060956A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2011060956A
公开(公告)日：2011-03-24
申请号：JP2009208265
申请日：2009-09-09
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIDA KOICHI , AISO FUMIKI , NAKAO TAKASHI , KAI WAKANA , FUKUMOTO ATSUSHI
IPC分类号： H01L27/10
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device including a diode having an impurity region small in film thickness and having sufficient impurity concentration.
SOLUTION: This method of manufacturing a semiconductor device includes processes of: forming an amorphous silicon layer 105; adsorbing an impurity layer 106 on the silicon layer 105 using a gas; forming an amorphous silicon layer 107 on the impurity layer 106; adsorbing an impurity layer 108 on the silicon layer 107 using another gas; forming an amorphous silicon layer 109 on the impurity layer 108; forming a lower electrode layer 15 on the silicon layer 109; forming a variable resistance layer 11 on the lower electrode layer; forming an upper electrode layer 16 on the variable resistance layer; forming a columnar structure by patterning the upper electrode layer, the variable resistance layer, the lower electrode layer, the silicon layer 109, the impurity layer 108, the silicon layer 107, the impurity layer 106, and the silicon layer 105; and applying heat after forming the silicon layer 109.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，该半导体器件包括具有薄膜厚度小且杂质浓度较高的杂质区的二极管。解决方案：这种制造半导体器件的方法包括以下工艺：形成非晶硅层105; 使用气体在硅层105上吸附杂质层106; 在杂质层106上形成非晶硅层107; 使用另一气体在硅层107上吸附杂质层108; 在杂质层108上形成非晶硅层109; 在硅层109上形成下电极层15; 在下电极层上形成可变电阻层11; 在可变电阻层上形成上电极层16; 通过图案化上电极层，可变电阻层，下电极层，硅层109，杂质层108，硅层107，杂质层106和硅层105形成柱状结构; 并且在形成硅层109之后施加热量。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JPH11161618A MOBILE COMPUTER MANAGEMENT DEVICE, MOBILE COMPUTER DEVICE, AND MOBILE COMPUTER REGISTERING METHOD 失效
公开(公告)号：JPH11161618A
公开(公告)日：1999-06-18
申请号：JP24986398
申请日：1998-09-03
申请人： TOSHIBA CORP
发明人： INOUE ATSUSHI , ISHIYAMA MASAHIRO , FUKUMOTO ATSUSHI , TSUDA YOSHIYUKI , OKAMOTO TOSHIO
IPC分类号： G06F21/20 , G06F13/00 , G06F15/00 , G06F15/16 , H04L9/32 , H04L12/28 , H04L12/46 , H04L12/66
摘要： PROBLEM TO BE SOLVED: To provide the mobile computer management device (home agent) which can authenticate a user who is operating a mobile computer when the mobile computer sends a registration message of its current position to the mobile computer management device from its movement destination network. SOLUTION: The mobile computer management device which is installed in the home network of the mobile computer 2 and enables the mobile computer 2 to have a communication by moving among networks 1a to 1c has a registering function which registers information on the current position of the mobile computer 2 according to the registration message sent from the mobile computer 2, a user authenticating function which inspects the adequacy of the user of the mobile computer 2 by using information based upon a user input received from the mobile computer 2 prior to the registration by the registering function and controls the registration of the information on the current position by the registering function according to the inspection result, and a transfer function which transfers packets addressed to the mobile computer to the current position of the mobile computer 2 according to the information registered by the registering function.

7. 发明专利

JPH10126405A MOBILE COMPUTER DEVICE AND PACKET CIPHER RECOGNIZING METHOD 失效
公开(公告)号：JPH10126405A
公开(公告)日：1998-05-15
申请号：JP27355796
申请日：1996-10-16
申请人： TOSHIBA CORP
发明人： INOUE ATSUSHI , ISHIYAMA MASAHIRO , FUKUMOTO ATSUSHI , TSUDA YOSHIYUKI , SHINPO ATSUSHI , OKAMOTO TOSHIO
IPC分类号： G06F21/20 , H04L9/12 , H04L9/32 , H04L29/06 , G06F15/00
摘要： PROBLEM TO BE SOLVED: To improve packet processing efficiency and to facilitate network management processing by selecting at least either of packet cipher recognition processing that belongs to a packet processor and its own device and making it perform cipher recognition processing. SOLUTION: A mobile computer 2 recognizes that its own device is located outside a home network 1a, acquires both security parameters of a gateway 4a of the network 1a and a gateway 4b of a moving destination network 1b when it recognizes a gateway that makes its own device a processing object, compares both and if they are the same except a part that corresponds to a moving destination network 1b, it turns off a packet cipher recognizing part 10 of its own device and also issues a request to change an attribute of the computer 2 on a management list of the gateway 4b of the network 1b into an object of cipher recognition processing. The packet that is transferred from an interment 6 to the gateway 4b is delivered to the computer 2 after cipher recognition processing.

8. 发明专利

JPH1188431A PACKET RELAY DEVICE, MOVING COMPUTER DEVICE, MOVING COMPUTER MANAGEMENT DEVICE, PACKET RELAY METHOD, PACKET TRANSMISSION METHOD AND MOVING COMPUTER POSITION REGISTRATION METHOD 失效
公开(公告)号：JPH1188431A
公开(公告)日：1999-03-30
申请号：JP24115697
申请日：1997-09-05
申请人： TOSHIBA CORP
发明人： INOUE ATSUSHI , ISHIYAMA MASAHIRO , FUKUMOTO ATSUSHI , TSUDA YOSHIYUKI
IPC分类号： G06F13/00 , G09C1/00 , H04B7/26 , H04L9/14 , H04L12/70 , H04L29/06 , H04L29/12 , H04W4/00 , H04W8/02 , H04W8/26 , H04W12/02 , H04W80/04 , H04L12/56
摘要： PROBLEM TO BE SOLVED: To continuously use a moving IP system even if a moving computer moves to a global address out of an organization by inspecting the content of a packet and transferring it as a system using a private address. SOLUTION: A packet relay device (moving computer management device) 5 receiving a ciphered registration request packet decodes the packet by a key for the moving computer 2 being a transmission source and inspects the contents of the packet. When it is judged to be the registration request of moving IP from identification information in a packet header, the home address and the present position address of the moving computer are taken out from the packet and they are registered in a management table. The payload of a response packet (registration succeeding packet) for the registration request is ciphered with the key corresponding to the moving computer 2 being a transmission destination. The moving computer 2 decodes the packet with the key corresponding to the packet relay device 5 being the transmission source and registration success is recognized from the obtained response packet.

9. 发明专利

JPH07200317A OPERATION RIGHT MANAGEMENT EQUIPMENT 失效
公开(公告)号：JPH07200317A
公开(公告)日：1995-08-04
申请号：JP34933593
申请日：1993-12-28
申请人： TOSHIBA CORP
发明人： TAKAHASHI TOSHINARI , OKAMOTO TOSHIO , FUKUMOTO ATSUSHI , SHIN SHIYOUKOU , YOSHIDA HIDEKI
IPC分类号： G06F12/14 , G06F1/00 , G06F9/46 , G06F21/24
摘要： PURPOSE:To attain flexible operation right management for threads by providing a means storing revision right information and a means referencing the stored revision right information before execution of revision of operation right information and verifying whether or not the revision is permitted to the equipment. CONSTITUTION:The equipment is provided with a means storing revision right information representing whether or not revision of operation right information is permitted based on a thread or the user being a subject of the revision or a memory area or a program in which the subject of revision is in existence and a means referencing the stored revision right information before execution of the revision of the operation right information and verifying whether or not the revision is permitted. That is, an operation right list storage section 7 stores a table relating to thread protection and storing a fact of the right executing the operation to each thread and used for an operation right discrimination section 12. Thus, not only the management of the operation right to the thread but also the revision right is flexibly expressed and managed by the combination of various conditions.

10. 发明专利

JPH0736713A PROGRAM EXECUTION MANAGEMENT DEVICE 失效
公开(公告)号：JPH0736713A
公开(公告)日：1995-02-07
申请号：JP17863793
申请日：1993-07-20
申请人： TOSHIBA CORP
发明人： FUKUMOTO ATSUSHI , OKAMOTO TOSHIO , SHIN SHIYOUKOU , YOSHIDA HIDEKI , TAKAHASHI TOSHINARI
IPC分类号： G06F9/46 , G06F9/48
摘要： PURPOSE:To perform sufficient protection with flexibility by the same method in thread operation instructions among threads sharing the same virtual address space by providing a list for registering information on from which thread operations can be performed to the respective threads. CONSTITUTION:First, the information of an operation thread ID and a memory area ID for which a system call is executed is obtained respectively from a thread ID storage part 6 and a memory area ID storage part 5. The table of a thread operation authority storage part 7 is referred to based on the information and a pertinent entry is searched. Then, the information of a part pertinent to intra-thread state read authority within the part for indicating the operation authority of the found entry is read and whether or not read is permitted is judged. The judgement is performed in an operation authority judging part 12. When it is permitted by the judgement, the referring operation of a thread management table for reading the internal state of the permitted thread is executed to an object thread in a thread state reference execution part 16.

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