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1. 发明专利

JP2013201272A Embedding method of film and semiconductor device 有权
标题翻译：薄膜和半导体器件的嵌入方法
公开(公告)号：JP2013201272A
公开(公告)日：2013-10-03
申请号：JP2012068439
申请日：2012-03-23
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIMIZU YASUTO , OGUCHI HISASHI , TOMITA HIROSHI
IPC分类号： H01L21/8247 , H01L21/316 , H01L21/336 , H01L21/76 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L21/02304 , H01L21/7682 , H01L21/76834 , H01L21/76837 , H01L23/24 , H01L27/11568 , H01L29/66833 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an embedding method of a film and a semiconductor device capable of miniaturization.SOLUTION: The embedding method of a film includes a step for forming a recess which reaches a first layer by penetrating a second layer provided thereon and containing a material different from that contained in the first layer, a step for forming a monomolecular film containing an organic molecule so as to cover the side face of the recess, by bringing a material containing the organic molecule into contact with the first layer and second layer on the side face of the recess, and a step for forming a film, embedding of which in the recess is controlled by the monomolecular film, on the monomolecular film.
摘要翻译：要解决的问题：提供能够小型化的膜和半导体器件的嵌入方法。解决方案：膜的包埋方法包括通过穿透其上设置的第二层形成到达第一层的凹部的步骤，与第一层不同的材料，通过使含有有机分子的材料与第一层和第二层接触而形成含有有机分子的单分子膜以覆盖凹部的侧面的步骤在该单分子膜上，在该凹部的侧面和形成膜的步骤中，通过单分子膜将其嵌入到凹部内而形成。

2. 发明专利

JP2013038356A Cleaning method and cleaning device 审中-公开
标题翻译：清洁方法和清洁装置
公开(公告)号：JP2013038356A
公开(公告)日：2013-02-21
申请号：JP2011175602
申请日：2011-08-11
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIMIZU YASUTO , OGUCHI HISASHI , TOMITA HIROSHI
IPC分类号： H01L21/304
CPC分类号： A46B13/02 , A46B13/001 , A46B2200/30 , H01L21/67046 , H01L21/67754
摘要： PROBLEM TO BE SOLVED: To provide a cleaning method and a cleaning device which can clean a large number of wafers per unit time.SOLUTION: A batch cleaning method for cleaning a plurality of semiconductor substrates once includes: a first step of transporting the semiconductor substrates in a state where the semiconductor substrates are held at predetermined intervals; a second step of sandwiching the semiconductor substrates between a plurality of roll brushes which are provided on each of front surfaces and rear surfaces of the semiconductor substrates and of which longitudinal directions are arranged in parallel with the front surfaces and the rear surfaces thereof; and a third step of cleaning the semiconductor substrates by rotating the roll brushes provided on each of the front surfaces and the rear surfaces.
摘要翻译：要解决的问题：提供一种能够每单位时间清洁大量晶片的清洁方法和清洁装置。解决方案：一次清洗多个半导体衬底的批次清洗方法包括：在半导体衬底以预定间隔保持的状态下传送半导体衬底的第一步骤; 将半导体基板夹在设置在半导体基板的前表面和后表面之间的多个辊刷之间并且其纵向方向与其前表面和后表面平行布置的第二步骤; 以及通过旋转设置在每个前表面和后表面上的辊刷来清洁半导体衬底的第三步骤。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2014045126A Method and apparatus for manufacturing functional element 有权
标题翻译：制造功能元件的方法和装置
公开(公告)号：JP2014045126A
公开(公告)日：2014-03-13
申请号：JP2012187623
申请日：2012-08-28
申请人： Toshiba Corp , 株式会社東芝
发明人： TOMITA HIROSHI , OGUCHI HISASHI , YOSHIMIZU YASUTO , TANAKA YUSUKE
IPC分类号： H01L27/28 , H01L27/105 , H01L29/06 , H01L45/00 , H01L49/00 , H01L51/05 , H01L51/40
CPC分类号： H01L51/0098 , B82Y10/00 , G11C13/0016 , H01L21/02057 , H01L21/02115 , H01L21/02301 , H01L51/0007 , H01L51/0017 , H01L51/0029 , H01L51/0591 , H01L51/56
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a functional element, which forms a uniform organic layer on the surface of metal electrodes facing each other across a nanogap.SOLUTION: The method for manufacturing a functional element according to an embodiment fills a space between a first electrode and a second electrode formed facing the first electrode with a solvent in which organic molecules are dispersed and to which a hydrogen gas has been added, to form an organic layer containing the organic molecules between the first electrode and the second electrode.
摘要翻译：要解决的问题：提供一种制造功能元件的方法，该功能元件在金属电极的表面上形成均匀的有机层，所述金属电极的表面跨越纳米凹槽。解决方案：根据实施例的功能元件的制造方法填充空间在第一电极和第二电极之间形成面向第一电极的溶剂，其中有机分子被分散并已加入氢气的溶剂形成含有第一电极和第二电极之间的有机分子的有机层。

4. 发明专利

JP2013239622A Nonvolatile semiconductor storage device and manufacturing method of the same 审中-公开
标题翻译：非线性半导体存储器件及其制造方法
公开(公告)号：JP2013239622A
公开(公告)日：2013-11-28
申请号：JP2012112306
申请日：2012-05-16
申请人： Toshiba Corp , 株式会社東芝
发明人： SAKUMA KIWAMU , KUSAI HARUKA , YOSHIMIZU YASUTO , KIYOTOSHI MASAHIRO
IPC分类号： H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11551 , H01L27/11519 , H01L27/11524 , H01L27/11565 , H01L27/1157 , H01L27/11578 , H01L29/42332 , H01L29/42348 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To prevent characteristic degradation and fault in characteristics of a select transistor in a three-dimensional memory.SOLUTION: A nonvolatile semiconductor storage device according to an embodiment comprises: fin structures Fin1, Fin2 including semiconductor layers 12-1-12-4; a memory cell MC including a first gate structure including a first insulation layer 15, a floating gate electrode 16-FG having a first conductive layer, a second insulation layer 17 and a control gate electrode 18-CG having a second insulation layer in this order from on a surface in a third direction of the semiconductor layers 12-1-12-4; and a select transistor SGT including a second gate structure including the first insulation layer 15 and a select gate electrode 16-SG having the first conductive layer in this order from on the surface in the third direction of the semiconductor layers 12-1-12-4. The first conductive layer which constitutes the select gate electrode 16-SG extends in a first direction and is shared with the select transistor SGT on the semiconductor layers 12-1-12-4.
摘要翻译：要解决的问题：防止三维存储器中的选择晶体管的特性劣化和特性故障。解决方案：根据实施例的非易失性半导体存储器件包括：鳍结构Fin1，Fin2，包括半导体层12-1-12 -4; 具有包括第一绝缘层15，具有第一导电层的浮栅电极16-FG，第二绝缘层17和具有第二绝缘层的控制栅电极18-CG的第一栅极结构的存储单元MC，从半导体层12-1-12-4的第三方向的表面上，以及包括第二栅极结构的选择晶体管SGT，其包括第一绝缘层15和具有第一导电层的选择栅电极16-SG，从半导体层12-1-12的第三方向的表面开始， 4。构成选择栅电极16-SG的第一导电层沿第一方向延伸并与半导体层12-1-12-4上的选择晶体管SGT共用。

5. 发明专利

JP2013125905A Method for forming wiring pattern, and semiconductor device 有权
标题翻译：形成布线图案的方法和半导体器件
公开(公告)号：JP2013125905A
公开(公告)日：2013-06-24
申请号：JP2011274772
申请日：2011-12-15
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIMIZU YASUTO , WAKATSUKI SATOSHI , OGUCHI HISASHI , SAKATA ATSUKO , TOMITA HIROSHI
IPC分类号： H01L21/768 , C23C18/18 , H01L21/28 , H01L21/288 , H01L21/3205
CPC分类号： C23C18/1608 , C23C18/1893 , C23C18/32 , H01L21/4846 , H01L21/76874 , H01L21/76879 , H01L21/76885 , H01L28/91
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a stable wiring pattern, and a semiconductor device.SOLUTION: The method for forming a wiring pattern according to the present embodiment comprises the steps of: forming an insulating pattern having a side surface on a main surface of a substrate; forming a self-assembled film having an affinity for a material of the insulating pattern, on the side surface of the insulating pattern; and depositing a conductive material on a side surface of the self-assembled film to form a conductive layer. The method for forming a wiring pattern also comprises the steps of: covering the periphery of the conductive layer with an insulating interlayer film, on the main surface; and exposing the conductive layer from a surface of the interlayer film.
摘要翻译：要解决的问题：提供一种用于形成稳定布线图案的方法和半导体器件。解决方案：根据本实施例的形成布线图案的方法包括以下步骤：在基板的主表面上形成具有侧表面的绝缘图案; 在绝缘图案的侧表面上形成对绝缘图案的材料具有亲和性的自组装膜; 以及在所述自组装膜的侧表面上沉积导电材料以形成导电层。形成布线图形的方法还包括以下步骤：在主表面上用绝缘层间膜覆盖导电层的周边; 以及从所述中间膜的表面暴露所述导电层。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2012028697A Device and method for cleaning 审中-公开
标题翻译：用于清洁的装置和方法
公开(公告)号：JP2012028697A
公开(公告)日：2012-02-09
申请号：JP2010168442
申请日：2010-07-27
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAMURA YOSHINORI , YOSHIMIZU YASUTO , SHIBAYAMA KOICHIRO
IPC分类号： H01L21/304
CPC分类号： H01L21/67046 , B24B53/017 , H01L21/02057 , H01L21/0209
摘要： PROBLEM TO BE SOLVED: To provide a cleaning device which efficiently removes protrusions lying on a back surface of a wafer and to provide a cleaning method.SOLUTION: A cleaning device includes a holding part which holds a semiconductor wafer, a removal part which has an end part harder than a constituent material of a surface layer on a back surface of the semiconductor wafer and is used for cleaning the back surface of the semiconductor wafer that is a processed surface held by the holding part, a moving mechanism which relatively moves the removal part and the semiconductor wafer in a direction parallel to the back surface of the semiconductor wafer, and a control part controlling the moving mechanism. The moving mechanism relatively moves the removal part and the semiconductor wafer in a direction parallel to the back surface of the semiconductor wafer with the removal part spaced away from the back surface of the semiconductor wafer. Then, the end part of the removal part comes into contact with a protrusion made of the same material as the surface layer on the back surface of the semiconductor wafer to grind and remove the first protrusion.
摘要翻译：要解决的问题：提供一种有效地去除位于晶片的背面上的突起并提供清洁方法的清洁装置。解决方案：清洁装置包括保持半导体晶片的保持部分，具有比半导体晶片的背面上的表面层的构成材料硬的端部的去除部分，用于清洁背面作为由保持部保持的被处理面的半导体晶片的表面，使移除部和半导体晶片沿与半导体晶片的背面平行的方向相对移动的移动机构，以及控制部，。所述移动机构使所述去除部和所述半导体晶片沿着与所述半导体晶片的背面平行的方向移动，所述移除部与所述半导体晶片的背面隔开。然后，去除部分的端部与由半导体晶片的背面上的与表面层相同的材料制成的突起接触以研磨和去除第一突起。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011060954A Method for washing semiconductor wafer 审中-公开
标题翻译：洗涤半导体波形的方法
公开(公告)号：JP2011060954A
公开(公告)日：2011-03-24
申请号：JP2009208231
申请日：2009-09-09
申请人： Toshiba Corp , 株式会社東芝
发明人： TOMITA HIROSHI , HAYASHI HIDEKAZU , INUKAI MINAKO , YOSHIMIZU YASUTO , UMEZAWA KAORI
IPC分类号： H01L21/304 , G02F1/13 , G02F1/1333
CPC分类号： H01L21/67051 , H01L21/02052
摘要： PROBLEM TO BE SOLVED: To provide a method for washing a semiconductor wafer capable of effectively removing even finer particles adhering on the surface of the semiconductor wafer.
SOLUTION: In the method for washing the semiconductor wafer by a cleaning liquid, a liquid having a surface tension lower than water and having a viscosity lower than water is used as the cleaning liquid, and the semiconductor wafer is washed by the cleaning liquid in a state where the surface temperature of the semiconductor wafer is 30 to 50°C. The temperature of the wafer is elevated by spraying a fluid for elevating the temperature of the wafer against the rear of the semiconductor wafer.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够有效去除附着在半导体晶片表面上的更细颗粒的半导体晶片的洗涤方法。解决方案：在通过清洗液洗涤半导体晶片的方法中，使用表面张力低于水并且具有低于水的粘度的液体作为清洗液，并且通过清洗来清洗半导体晶片在半导体晶片的表面温度为30〜50℃的状态下的液体。通过喷射用于将晶片的温度提升到半导体晶片的后部的流体来升高晶片的温度。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2010080685A Nonvolatile storage device and method for fabricating the same 审中-公开
标题翻译：非易失存储器件及其制造方法
公开(公告)号：JP2010080685A
公开(公告)日：2010-04-08
申请号：JP2008247549
申请日：2008-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIMIZU YASUTO , NAKAO TAKASHI , AISO FUMIKI , FUKUMOTO ATSUSHI
IPC分类号： H01L21/8247 , H01L21/768 , H01L23/522 , H01L27/10 , H01L27/105 , H01L27/115 , H01L29/788 , H01L29/792 , H01L45/00 , H01L49/00
CPC分类号： H01L27/11578 , H01L27/11582 , H01L27/2409 , H01L27/2481 , H01L29/792 , H01L29/7926 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile storage device reducing warpage in a substrate even in a structure with multiple lamination films, and to provide a method for fabricating the device.
SOLUTION: The nonvolatile storage device includes: the substrate; a plurality of insulating films and electrodes films, which are alternately laminated on the substrate, where through-holes penetrating in a laminating direction are formed; semiconductor peelers formed inside the through-holes; and charge storage layers arranged between at least the semiconductor peelers and the electrode films. The insulating films include films where either compressive stress or tensile stress appears. The electrode films include films where the other compressive stress or the tensile stress appears.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：即使在具有多层压膜的结构中，也提供一种降低基板翘曲的非易失性存储装置，并提供一种制造该装置的方法。非挥发性存储装置包括：基板; 交替层压在基板上的多个绝缘膜和电极膜，其中形成了沿层叠方向穿透的通孔; 形成在通孔内的半导体剥离器; 并且对至少半导体剥离器和电极膜之间布置的电荷存储层进行充电。绝缘膜包括出现压应力或拉应力的膜。电极膜包括出现其它压应力或拉应力的膜。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2014045132A Semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：JP2014045132A
公开(公告)日：2014-03-13
申请号：JP2012187718
申请日：2012-08-28
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIMIZU YASUTO , TOMITA HIROSHI , OGUCHI HISASHI
IPC分类号： H01L21/027 , H01L21/304
CPC分类号： G03F7/20 , G03F7/165 , G03F7/40
摘要： PROBLEM TO BE SOLVED: To prevent collapse of an uneven pattern in a drying treatment after developing and rinsing in a lithography process on a semiconductor substrate on which the uneven pattern is formed.SOLUTION: A semiconductor device manufacturing method according to the present embodiment comprises: forming a predetermined pattern including an uneven pattern on a substrate; making a surface of the predetermined pattern be water-shedding; forming a resist film on the predetermined pattern; performing exposure processing and development processing on the resist film to make the resist film expose the uneven pattern; water rinsing the substrate; and drying the substrate.
摘要翻译：要解决的问题：为了防止在形成凹凸图案的半导体衬底上的光刻工艺中的显影和漂洗之后的干燥处理中的凹凸图案的塌陷。解决方案：根据本实施例的半导体器件制造方法包括：在衬底上形成包括不均匀图案的预定图案; 使预定图案的表面脱水; 在预定图案上形成抗蚀剂膜; 对抗蚀剂膜进行曝光处理和显影处理，以使抗蚀剂膜暴露不均匀图案; 水冲洗基材; 并干燥基材。

10. 发明专利

JP2011192885A Method of cleaning semiconductor substrate 审中-公开
标题翻译：清洗半导体衬底的方法
公开(公告)号：JP2011192885A
公开(公告)日：2011-09-29
申请号：JP2010059006
申请日：2010-03-16
申请人： Toshiba Corp , 株式会社東芝
发明人： TOMITA HIROSHI , OGUCHI HISASHI , INUKAI MINAKO , HAYASHI HIDEKAZU , YOSHIMIZU YASUTO
IPC分类号： H01L21/304
CPC分类号： H01L21/02052 , H01L21/02057
摘要： PROBLEM TO BE SOLVED: To provide a method of cleaning a semiconductor substrate that efficiently removes fine particles.
SOLUTION: The method of cleaning the semiconductor substrate includes a first cleaning step of cleaning the semiconductor substrate using a liquid chemical of ≥80°C, a first rinsing step of rinsing the semiconductor substrate using pure water of ≥40°C after the first cleaning step, a second rinsing step of rinsing the semiconductor substrate using pure wafer of ≤30°C after the first rinsing step, and a drying step of drying the semiconductor substrate after the second rinsing step. It is considered that particles are removed easier by raising a temperature in the cleaning.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种清洁半导体衬底以有效去除细小颗粒的方法。解决方案：清洁半导体衬底的方法包括：使用≥80℃的液体化学品清洁半导体衬底的第一清洗步骤;使用≥40℃以上的纯水冲洗半导体衬底的第一漂洗步骤; 第一清洗步骤，在第一漂洗步骤之后使用≤30℃的纯晶片冲洗半导体基板的第二冲洗步骤，以及在第二漂洗步骤之后干燥半导体基板的干燥步骤。认为通过提高清洗中的温度来更容易地去除颗粒。版权所有（C）2011，JPO＆INPIT

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