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1. 发明专利

JP2007258402A Magnetic sensor 有权
标题翻译：磁传感器
公开(公告)号：JP2007258402A
公开(公告)日：2007-10-04
申请号：JP2006080133
申请日：2006-03-23
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： YAMADERA HIDEYA , FUNABASHI HIROBUMI , OKAWA MAKOTO , ISOBE YOSHIHIKO
IPC分类号： H01L43/08 , G01R33/09
摘要： PROBLEM TO BE SOLVED: To improve the trade-off between a contact resistance between an electrode and a magnetic film and a fixed resistance caused by an intermediate film, in a magnetic sensor. SOLUTION: The magnetic sensor 10 comprises the magnetic film 36 having a magneto-resistance effect, the conductive intermediate film 35 formed on the magnetic film 36, a first electrode 32 electrically connected to the magnetic film 36 via a part 35a of the intermediate film 35, and a second electrode 38 electrically connected to the magnetic film 36 via other part 35b of the intermediate film 35. The magnetic sensor 10 also includes an insulating protection film 34 formed on the intermediate film 35. The intermediate film 35 is in a form wherein conductive particles are dispersed in an insulating film. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：在磁传感器中，改善电极和磁性膜之间的接触电阻与由中间膜引起的固定电阻之间的折衷。解决方案：磁传感器10包括具有磁阻效应的磁性膜36，形成在磁性膜36上的导电中间膜35，经由磁性膜36的一部分35a与磁性膜36电连接的第一电极32 中间膜35和通过中间膜35的其他部分35b与磁性膜36电连接的第二电极38.磁传感器10还包括形成在中间膜35上的绝缘保护膜34.中间膜35在其中导电颗粒分散在绝缘膜中的形式。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2002374014A Magnetic field detection element 有权
标题翻译：磁场检测元件
公开(公告)号：JP2002374014A
公开(公告)日：2002-12-26
申请号：JP2001179465
申请日：2001-06-14
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： ISHIKAWA SEISHI , NISHIBE YUJI , OTA NORIKAZU , YAMADERA HIDEYA
IPC分类号： G01R33/02 , G11B5/33 , H01L43/00
摘要： PROBLEM TO BE SOLVED: To provide a magnetic field detection element that can reduce manufacturing time, without decreasing the detection sensitivity.
SOLUTION: In the magnetic field detection element 10 having a conductive material layer 13, and a magnetic material layer 14 which is laminated to the conductive material layer 13, when the thickness and width of the magnetic material layer 14 are set to (a) and (b), respectively, and the width of the conductive material layer 13 is set to (d), (a) and (b) are set to 2 μm or less and d×2.5/a mm or more, respectively. Additionally, a is set to 5 μm or less, and further (b) is set to 5 to 10 times larger than (d).
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供可以在不降低检测灵敏度的情况下减少制造时间的磁场检测元件。解决方案：在具有导电材料层13的磁场检测元件10和层压到导电材料层13上的磁性材料层14当将磁性材料层14的厚度和宽度设定为（a）和（b），将导电材料层13的宽度设定为（d），（a）和（b）分别设定为2μm以下，d×2.5 / mm以上。此外，a设定为5μm以下，进一步（b）设定为比（d）大5〜10倍。

3. 发明专利

JP2001074548A RESISTANCE-VARIABLE SENSOR 失效
公开(公告)号：JP2001074548A
公开(公告)日：2001-03-23
申请号：JP24568599
申请日：1999-08-31
申请人： TOYOTA CENTRAL RES & DEV
发明人： FUNABASHI HIROBUMI , SAKATA JIRO , YAMADERA HIDEYA
IPC分类号： G01J1/02
摘要： PROBLEM TO BE SOLVED: To enhance sensitivity and to widen an applying range, compared with a conventional resistance-variable sensor. SOLUTION: This sensor is a resistance-variable sensor of which a resistance film 5 for detecting an electric resistance change caused by heat comprises a material expressed by a composition TiON. The sensor is provided with membrane structure 2 provided on a silicon semiconductor substrate 1, and a cavity formed under the membrane structure 2. The structure 2 is layeredly formed with a supporting film 4, the resistance film 5, a wiring film 6 and a protection film 7 in this order in the sensor, and a compositional ratio of the TiON film as the resistance film 5 is preferably, in particular, Ti 35-45%, O 25-50%, and N 15-35% in terms of an atomic ratio.

4. 发明专利

JP2001013010A RESISTANCE VARIABLY-TYPE INFRARED DETECTOR 失效
公开(公告)号：JP2001013010A
公开(公告)日：2001-01-19
申请号：JP18131699
申请日：1999-06-28
申请人： TOYOTA CENTRAL RES & DEV
发明人： MIZUNO KENTAROU , FUJITSUKA TOKUO , YAMADERA HIDEYA , FUNABASHI HIROBUMI , SAKATA JIRO
IPC分类号： G01J5/48 , G01J5/20
摘要： PROBLEM TO BE SOLVED: To suppress temperature drifts due to environment temperature with the heightened ratio of effective area of the pixels of a resistance variable-type infrared detector. SOLUTION: Eight compact thermosensitive resistors 11-n and eight compact reference resistors 12-n are arranged in a checker pattern and connected one another to be one thermosensitive resistor row and reference resistor row (Fig. (a)). Then an infrared absorbing film 41 is arranged on the compact thermosensitive resistors 11-n (Fig. (b)). One pixel is comprised of eight infrared absorbing films 41 as a whole. All the eight compact thermosensitive resistors 11-n and eight compact reference resistors 12-n are made of the same type of metal in the same shape in the same film thickness. By this constitution, it is possible to form a resistance variable-type infrared detector with a unit area to suppress the effects of environment temperature gradient between the thermosensitive resistors (row) and reference resistors (row).

5. 发明专利

JP2000214035A ELECTRICAL CAPACITANCE PRESSURE SENSOR AND ITS MANUFACTURE 失效
公开(公告)号：JP2000214035A
公开(公告)日：2000-08-04
申请号：JP32533599
申请日：1999-11-16
申请人： TOYOTA CENTRAL RES & DEV
发明人： SHIMAOKA KEIICHI , OTA NORIKAZU , YAMADERA HIDEYA
IPC分类号： G01L9/12 , B81B3/00 , G01L9/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To decrease the temperature dependency of the zero point and sensitivity of the electrical capacitance pressure sensor using a movable diaphragm formed of a thin film. SOLUTION: On the main surface of a single-crystal silicon substrate 50, a pressure-sensitive capacity part 500 which varies in capacitance by pressure application and a reference capacity part 600 which does not vary are provided are the movable diaphragm 300 is formed of 1st and 2nd insulating diaphragm films 100 and 130, a 1st upper electrode 110, and a heat-stress reducing film 200 (silicon nitride film by, e.g. plasma CVD) using a material having a coefficient of thermal expansion close to that of the single-crystal silicon substrate. Consequently, the mean coefficient of thermal expansion of the movable diaphragm 300 is approximated to that of the substrate and thermal stress decreases. Further, the capacity difference between the two capacitors of the pressure-sensitive capacity part 500 and reference capacity part 600 which are close to each other is detected to cancel the effect of temperature.

6. 发明专利

JPS63101516A SLIP BEARING MATERIAL 失效
公开(公告)号：JPS63101516A
公开(公告)日：1988-05-06
申请号：JP24622286
申请日：1986-10-16
申请人： TOYOTA CENTRAL RES & DEV , TAIHO KOGYO CO LTD
发明人： YAMADERA HIDEYA , TAGA YASUNORI , KUMADA YOSHIO , KAMIYA SHOJI , YOKOTA YUJI
IPC分类号： F16C33/12
摘要： PURPOSE:To enable improvement of drape during formation of a combination layer, by a method wherein the constituting element of an intermediate layer and the constituting element, except Sn, In, of an aluminium alloy layer are contained in a combination layer between the intermediate layer and the aluminium alloy layer. CONSTITUTION:A slip bearing material is formed by a base material 1 consisting of an SPCC steel sheet, an aluminium alloy layer 2, thermally contact-bonded to a base material 1 surface, a combination layer 3 formed by an Al-Sn-In-Ni alloy and formed on an aluminium alloy layer 2 surface, an intermediate layer 4 formed on a combination layer 3 surface and by nickel, and an overlay layer 5 formed on the surface of the intermediate layer 4 and formed by Pb-10Sn-5In. Thus, the combination layer 3 has Ni, except Sn, In, of the intermediate layer 4 and Al of the aluminium alloy layer 2, and drape during formation of a combination layer is improved.

7. 发明专利

JPS62260364A METALLIC LAMINATE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS62260364A
公开(公告)日：1987-11-12
申请号：JP10318486
申请日：1986-05-07
申请人： TOYOTA CENTRAL RES & DEV
发明人： TAGA YASUNORI , YAMADERA HIDEYA , OWAKI TAKESHI
IPC分类号： H01L21/52 , C23C28/02 , H01L21/28 , H01L21/58 , H01L29/43
摘要： PURPOSE:To obtain a metallic laminate electrode, which can ensure ohmic contacts by forming metallic films onto an Si chip and by heat treatment and can acquire strong bonding power by soldering, by laminating first-fourth layers each consisting of specific metals onto an Si substrate. CONSTITUTION:A laminate composed of a first layer consisting of an Sn alloy, a second layer made up of an Sn-Ni alloy or an Sn-Fe alloy, a third layer composed of a Ni-Si or Ni-Si-B amorphous alloy or an Fe metal, a fourth layer consisting of a Ni-Si or Fe-Si alloy and an Si substrate in succession from the surface is used. The third layer made up of the Ni-Si or Ni-Si-B amorphous alloy or the Fe metal is shaped onto the Si substrate, and the fourth layer composed of the Ni-Si or Fe-Si alloy is formed on the interface of the Si substrate and the third layer through heat treatment. The first layer consisting of the Sn alloy is shaped onto the surface of the third layer, and the second layer made up of the Ni-Sn or Fe-Sn alloy layer is formed on the interface of the first layer and the third layer through heat treatment, thus manufacturing the metallic laminate.

8. 发明专利

JPS62112787A METALLIC LAMINATE 失效
公开(公告)号：JPS62112787A
公开(公告)日：1987-05-23
申请号：JP25281585
申请日：1985-11-13
申请人： TOYOTA CENTRAL RES & DEV
发明人： OWAKI TAKESHI , TAGA YASUNORI , YAMADERA HIDEYA
IPC分类号： C23C14/14 , B32B15/01 , C22C19/05 , C23C28/02 , C25D5/10
摘要： PURPOSE:To improve the durability of a metallic laminate at high temp. by interposing an intermediate layer contg. Ni, Si and B between the 1st metallic layer contg. Sn and the 2nd metallic layer contg. Cu so as to prevent the diffusion of Sn. CONSTITUTION:An intermediate layer is interposed between the 1st metallic layer contg. Sn and the 2nd metallic layer contg. Cu and/or Ni to obtain a metallic laminate. The intermediate layer is made of an Ni-Si or Ni-Si-B alloy. The diffusion of Sn in the 1st metallic layer into the 2nd metallic layer is prevented by the intermediate layer.

9. 发明专利

JPS6213003A AMORPHOUS ALLOY FILM FOR STRAIN GAUGE 失效
公开(公告)号：JPS6213003A
公开(公告)日：1987-01-21
申请号：JP15180185
申请日：1985-07-10
申请人： TOYOTA CENTRAL RES & DEV
发明人： TAGA YASUNORI , YAMADERA HIDEYA , TANEMURA MASAYUKI
IPC分类号： G01B7/00 , H01B1/02 , H01C7/00 , H01C10/10

10. 发明专利

JP2004172430A Magnetic impedance element 审中-公开
公开(公告)号：JP2004172430A
公开(公告)日：2004-06-17
申请号：JP2002337416
申请日：2002-11-21
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： YAMADERA HIDEYA , OTA NORIKAZU , FUNABASHI HIROBUMI , SUZUKI YASUTOSHI , AO KENICHI
IPC分类号： G01R33/02 , H01F10/14
摘要： PROBLEM TO BE SOLVED: To provide a magnetic impedance element that is excellent in heat resistance and temperature characteristic and is high in sensitivity.
SOLUTION: This magnetic impedance element utilizes such magnetic impedance effect that the impedance of the element changes in accordance with an external magnetic field when an alternating current is supplied to the element. This element has a magnetic layer 26 formed of an Ni-Fe alloy film. The Ni and Fe contents of the alloy film are respectively adjusted to 65-90 wt% and 10-35 wt%. In addition, the ratio α(=L1/L2) of the length (L1) of the magnetic layer 26 in the supplying direction of the alternating current to the width (L2) of the layer 26 and the ratio β(=L2/L3) of the width (L2) to the thickness (L3) of the layer 26 are respectively adjusted to α≥10 and 1≤β≤50, and the width of the layer 26 is adjusted to ≥5 μm.
COPYRIGHT: (C)2004,JPO

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