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1. 发明专利

JP2007234771A Quantum infrared sensor 审中-公开
标题翻译：量子红外传感器
公开(公告)号：JP2007234771A
公开(公告)日：2007-09-13
申请号：JP2006052941
申请日：2006-02-28
申请人： Toyota Central Res & Dev Lab Inc , 株式会社豊田中央研究所
发明人： SUGIMOTO KENSHO , FUNABASHI HIROBUMI , MITSUSHIMA KOICHI
IPC分类号： H01L31/02 , B82B1/00 , H01L27/14
摘要： PROBLEM TO BE SOLVED: To provide a quantum infrared sensor capable of detecting infrared rays with a high sensibility by a quantum effect in a high degree, and capable of being operated under temperature conditions close to a room temperature. SOLUTION: The quantum infrared sensor has a meso-porous body 11 having a central pore diameter of 1.5 to 5.0 nm, and metallic oxides 12 having a refractive index within a range of 1.7 to 2.1 to a light having a wavelength of 3 to 15 μm arrayed in the pores of the meso-porous body 11. The quantum infrared sensor further has electrodes 13 electrically connected to the metallic oxides 12. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够高度量子效应地检测具有高灵敏度的红外线并能够在接近室温的温度条件下操作的量子红外传感器。解决方案：量子红外传感器具有中心孔径为1.5至5.0nm的中孔多孔体11和具有波长为3的光的折射率在1.7至2.1范围内的金属氧化物12 至15μm排列在中孔多孔体11的孔中。量子红外传感器还具有与金属氧化物12电连接的电极13.版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2000337958A RESISTANCE VARIATION TYPE INFRARED SENSOR 失效
公开(公告)号：JP2000337958A
公开(公告)日：2000-12-08
申请号：JP14490199
申请日：1999-05-25
申请人： TOYOTA CENTRAL RES & DEV
发明人： YAMADERA HIDEYA , FUJITSUKA TOKUO , MIZUNO KENTAROU , FUNABASHI HIROBUMI , SAKATA JIRO
IPC分类号： G01J1/02
摘要： PROBLEM TO BE SOLVED: To provide the resistance variation type infrared sensor which is superior in ratio detection capability to a conventional resistance variation type infrared sensor. SOLUTION: This resistance variation type infrared sensor has a membrane structure 2 provided on a silicon semiconductor substrate 1 and a gap 3 formed below the membrane structure 2, which is formed by stacking and forming a base film 4, a resistance film 5, a protection film 6, and an infrared-ray absorption film 7 in order; and the infrared-ray absorption film is formed of alloy consisting principally of nickel and zinc. The nickel-zinc alloy contains 10 to 40 wt.% zinc as compared with nickel and/or the infrared-ray absorption film is 0.1 to 5 μm thick.

3. 发明专利

JP2000146592A OSCILLATORY DETECTOR 失效
公开(公告)号：JP2000146592A
公开(公告)日：2000-05-26
申请号：JP32491398
申请日：1998-11-16
申请人： TOYOTA CENTRAL RES & DEV
发明人： TSUCHIYA TOMOYOSHI , FUNABASHI HIROBUMI , SAKATA JIRO
IPC分类号： G01C19/56 , G01C19/5726 , G01C19/5755 , G01P9/04
摘要： PROBLEM TO BE SOLVED: To suppress leakage vibrations along a detecting axis of exciting vibrations. SOLUTION: This detector 10 is constituted so as to detect angular velocity Ωby vibrating a mass part 10, which is supported by beams 21, 22, 23, and 24 extended along the y-axis in parallel with a substrate surface, along the x-axis and detecting vibrations due to the Coriolis force generated along the z-axis by the angular velocity Ω around the y-axis. In this case, the detector 10 is provided with a pair of exciting electrodes 31 and 32 which each have components along the x-axis and the z-axis and are arranged in such a way as to sandwich the mass part 10 along the x-axis. By independently controlling a A.C voltage to impress on each of the electrodes 31 and 32, it is possible to control the sum of the components of force along the x-axis and the sum of the components of force along the z-axis independently and to suppress leakage vibrations along a detection axis of vibrations.

4. 发明专利

JP2000124470A FINE VACUUM CONTAINER AND ITS MANUFACTURE 失效
公开(公告)号：JP2000124470A
公开(公告)日：2000-04-28
申请号：JP30636098
申请日：1998-10-13
申请人： TOYOTA CENTRAL RES & DEV
发明人： KAGEYAMA YASUYUKI , TSUCHIYA TOMOYOSHI , FUNABASHI HIROBUMI , SAKATA JIRO
IPC分类号： H01L21/306 , B81B1/00 , B81C1/00 , F16J13/00 , G01L9/00 , G01L9/04 , G01L19/14 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To obtain a fine vacuum container which can realize high vacuum degree. SOLUTION: A fine vacuum container 17 has a Ti film 21 which seals a space part 15. The Ti film 21 has a function to suck H2O and O2 remaining in the space part 15. Therefore, after vacuum sealing, even if H2O, O2 remain in the space part 15, the Ti film 21 adsorbs H2O, O2. Therefore, vacuum degree of the fine vacuum container 17 is high.

5. 发明专利

JPH08274277A SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH08274277A
公开(公告)日：1996-10-18
申请号：JP9968295
申请日：1995-03-31
申请人： TOYOTA CENTRAL RES & DEV
发明人： SOEJIMA SHIGEMASA , KIGAMI MASAHITO , FUNABASHI HIROBUMI , SUGIYAMA SUSUMU
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/108 , H01L29/786
摘要： PURPOSE: To provide a method of manufacturing a semiconductor memory device (DRAM) more enhanced in degree of integration exceeding a prior art. CONSTITUTION: A stereoscopic SOI(Silicon-On-Insulator) structure is formed on a part of a silicon substrate, and a capacitor and an insulated gate field effect transistor channel forming region are formed in one piece inside the SOI structure. The channel forming region (130a, b) of an insulated-gate field effect transistor is formed on the side wall of the stereoscopic SOI structure, the drain (or source) region of the insulated-gate field effect transistor is formed as continuously connected to the channel forming region, and a capacitor is formed overlapping with the drain (or source) region.

6. 发明专利

JPH06201724A ACCELERATION SENSOR 失效
公开(公告)号：JPH06201724A
公开(公告)日：1994-07-22
申请号：JP35879992
申请日：1992-12-28
申请人： TOYOTA CENTRAL RES & DEV
发明人： TABATA OSAMU , KIMURA MASAHITO , FUNABASHI HIROBUMI , SHIMAOKA KEIICHI , FUJIYOSHI MOTOHIRO , SUGIYAMA SUSUMU , NAKAGAWA TOSHIAKI , TSURUMI YASUAKI
IPC分类号： G01P15/125 , H01L29/84
摘要： PURPOSE:To realize an excellent temperature characteristic, simplify an assembling process and a package process, and reduce manufacturing cost in an acceleration sensor to detect acceleration as a capacity change between electrodes. CONSTITUTION:An acceleration sensor is composed of a mass part 1, a board 3 and a beam 2 to support the mass part 1 flexibly to the board 3 from one side, and the mass part 1 and the board 3 are separated at a prescribed interval from each other through the beam 2, and electrodes are arranged respectively on a surface where these are opposed to each other.

7. 发明专利

JP2008032458A Hydrogen gas sensor 审中-公开
标题翻译：氢气传感器
公开(公告)号：JP2008032458A
公开(公告)日：2008-02-14
申请号：JP2006204350
申请日：2006-07-27
申请人： Toyota Central Res & Dev Lab Inc , 株式会社豊田中央研究所
发明人： SUGIMOTO KENSHO , FUNABASHI HIROBUMI , MITSUSHIMA KOICHI
IPC分类号： G01N27/12
摘要： PROBLEM TO BE SOLVED: To provide a hydrogen gas sensor excellent in sensitivity and response, capable of rapidly detecting even a very small amount of a hydrogen gas and developing sufficient durability.
SOLUTION: The hydrogen gas sensor is equipped with a meso-porous body 11 with a center pore diameter of 1.5-5.0 nm, the metal components 12 having a hydrogen occluding capacity arranged in the pores of the meso-porous body 11 and the electrode 13 electrically connected to the metal components 12.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供灵敏度和响应性优异的氢气传感器，能够快速检测甚至极少量的氢气并显现出足够的耐久性。解决方案：氢气传感器配备有中孔直径为1.5-5.0nm的中孔多孔体11，金属部件12具有设置在中孔多孔体11的孔中的吸氢能力，电极13电连接到金属部件12.版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2007057427A Infrared absorbing film and infrared ray detecting sensor 审中-公开
标题翻译：红外吸收膜和红外检测传感器
公开(公告)号：JP2007057427A
公开(公告)日：2007-03-08
申请号：JP2005244299
申请日：2005-08-25
申请人： Toyota Central Res & Dev Lab Inc , 株式会社豊田中央研究所
发明人： HOSOKAWA HIDEKI , FUJITSUKA TOKUO , FUNABASHI HIROBUMI
IPC分类号： G01J1/02 , G01J5/12 , G02B5/22
摘要： PROBLEM TO BE SOLVED: To provide an infrared ray absorbing film with high absorption capacity.
SOLUTION: The infrared absorbing film 20 includes an NSG film 24 arranged at an incident side of infrared radiation and a TiN film 28 stacked at a rear face 24b of the NSG film 24. Absorption coefficient of the NSG film 24 for infrared radiation is 5.78×10
3 cm
-1 . Absorption coefficient of the TiN film 28 is 8×10
4 cm
-1 . When the upper film (the NSG film 24), absorption coefficient of which is contained within a range of 3.5×10
2 to 2.2×10
5 cm
-1 , and the lower film (the TiN film 28), absorption coefficient of which is contained within a range of 1.0×10
3 to 2.2×10
5 cm
-1 , are combined to compose the infrared absorbing film 20, a film is obtained with very high absorption capacity.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有高吸收能力的红外线吸收膜。解决方案：红外线吸收膜20包括布置在红外辐射入射侧的NSG膜24和堆叠在NSG膜24的后面24b上的TiN膜28.用于红外辐射的NSG膜24的吸收系数是5.78×10 3 cm -1 。 TiN膜28的吸收系数为8×10 4 cm -1。当其吸收系数包含在3.5×10 2 至2.2×10 5 cm -1的范围内的上膜（NSG膜24）和下部膜（TiN膜28）的吸收系数在1.0×10 3 〜2.2×10 5的范围内 -1 组合构成红外吸收膜20，获得具有非常高的吸收容量的膜。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2004279325A Semiconductor magnetic sensor device and method of manufacturing the same 审中-公开
公开(公告)号：JP2004279325A
公开(公告)日：2004-10-07
申请号：JP2003073900
申请日：2003-03-18
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： AO KENICHI , SUZUKI YASUTOSHI , YAMADERA HIDEYA , OTA NORIKAZU , FUNABASHI HIROBUMI
IPC分类号： G01R33/02 , H01L27/22 , H01L43/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor magnetic sensor device whose size and cost can further be reduced.
SOLUTION: A thin-film magnetic impedance element 11, a resistor for performing magnetic detection by the use of the element 11, and peripheral circuits, such as an oscillation circuit, an amplifier circuit are formed on the same semiconductor substrate 17, to make the semiconductor magnetic sensor apparatus 10.
COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2003028741A Electrical capacitance sensor device 有权
标题翻译：电容式传感器装置
公开(公告)号：JP2003028741A
公开(公告)日：2003-01-29
申请号：JP2001211099
申请日：2001-07-11
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： OTA NORIKAZU , SHIMAOKA KEIICHI , FUNABASHI HIROBUMI , ISHIO SEIICHIRO , SUZUKI YASUTOSHI , ITO HAJIME , MAKINO YASUAKI
IPC分类号： G01P15/125 , G01D3/08 , G01L13/06 , G01R27/26
CPC分类号： G01D3/08
摘要： PROBLEM TO BE SOLVED: To enhance a yield in production of an electrical capacitance sensor device, or to enhance reliability when using it.
SOLUTION: This electrical capacitance sensor device 100 is provided with an electrostatic capacity type sensor 120 having physical quantity detecting capacitance groups 121-124 each of which comprises a movable electrode and a fixed electrode, an electrical capacitance detecting circuit 140 for covering a sensor output into a device output, a determination circuit 170 for determining abnormality in the sensor output, and a control circuit 110 for conducting switching to a non-connected condition between a capacitor determined as the abnormality and the electrical capacitance detecting circuit 140, and for conducting switching to a connected condition between the other capacitors and the electrical capacitance detecting circuit 140.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提高电容传感器装置的生产成本，或提高使用时的可靠性。解决方案：该电容式传感器装置100设置有具有物理量检测电容组121-124的静电电容型传感器120，每个物理量检测电容组包括可动电极和固定电极，电容检测电路140用于将传感器输出覆盖设备输出，用于确定传感器输出中的异常的确定电路170以及用于切换到被确定为异常的电容器与电容检测电路140之间的非连接状态的控制电路110，其他电容器和电容检测电路140之间的连接状态。

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