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    • 2. 发明专利
    • Copper or copper alloy material, its manufacturing method, and semiconductor package
    • 铜或铜合金材料及其制造方法和半导体封装
    • JP2008036668A
    • 2008-02-21
    • JP2006213147
    • 2006-08-04
    • Hitachi Cable Ltd日立電線株式会社
    • TAKANO HIROSATOOTA MAKOTOSUZUKI YOSHIO
    • B21B1/40B21B3/00C25D7/12H01L23/50
    • H01L2924/0002H01L2924/00
    • PROBLEM TO BE SOLVED: To provide copper or a copper alloy material having surface characteristics of a low surface roughness and of fewer fine cracks and having excellent platability, to provide a method for manufacturing the same material, and to provide a semiconductor package employing the same material as a lead frame material. SOLUTION: The copper or the copper alloy material that has a surface roughness of ≤0.1 μm by arithmetic average roughness (Ra), the maximum height (Rmax) of ≤1 μm, and fine cracks of ≤10 pieces/arbitrary 100 μm square on the material surface is manufactured by the steps of: subjecting a copper or a copper alloy material to pre-finish rolling using a roll, which is treated with shot blast and has a surface roughness Ra of 0.1-1 μm; and then subjecting the rolled material to finish rolling using a bright roll, which has a surface roughness Ra of COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了提供具有低表面粗糙度和较少细裂纹的表面特性并且具有优异的镀覆性的铜或铜合金材料,以提供制造相同材料的方法,并提供半导体封装 采用与引线框架材料相同的材料。 解决方案:通过算术平均粗糙度(Ra),最大高度(Rmax)≤1μm,微细裂纹≤10个/任意100的表面粗糙度≤0.1μm的铜或铜合金材料 通过以下步骤制造材料表面上的μm正方形:通过使用用喷丸处理并具有0.1-1μm的表面粗糙度Ra的辊对铜或铜合金材料进行预精轧; 然后在表面粗糙度Ra <0.1μm的光辊下,在≥10μm和≤200μm的范围内的总压下率下对轧制材料进行精轧。 版权所有(C)2008,JPO&INPIT