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1. 发明专利

JPH10312512A MAGNETORESITIVE HEAD 失效
公开(公告)号：JPH10312512A
公开(公告)日：1998-11-24
申请号：JP11723697
申请日：1997-05-07
申请人： TOSHIBA CORP , TDK CORP
发明人： FUKUZAWA HIDEAKI , KAMIGUCHI YUZO , INOUE NAOYUKI , IWASAKI HITOSHI , ITO NORIYUKI , OIKE TARO , KAWASHIMA HIROAKI
IPC分类号： G11B5/012 , G11B5/39 , H01F10/30 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To effectively control the generation of Barkhausen noise when narrow tracks are used in a magnetoresitive head of the spin valve type, in which a magnetism sensing layer having magnetic layer including highly saturated and magnetized Co. SOLUTION: This head is a GMR head including a spin valve GMR film 14 having a magnetism sensing layer 15 including, for example, a magnetic layer containing Co and a bias magnetic field applying film 21 for applying the bias magnetic field to this spin valve GMR film 14. The bias magnetic field applying film 21 is formed of a laminated film of a magnetic base layer 2 and a hard magnetic layer 23 formed thereon. The hard magnetic layer 23 is provided adjacent the end part of the spin valve GMR film 14 via the magnetic base layer 22. The magnetic base layer 22 has a saturated and magnetized Ms which satisfies at least either the conditions of Ms >=Ms or Ms >=Ms for saturated and magnetized Ms of the magnetism sensing layer and saturated and magnetized Ms of the hard magnetized layer.

2. 发明专利

JP2011199039A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2011199039A
公开(公告)日：2011-10-06
申请号：JP2010064762
申请日：2010-03-19
申请人： Toshiba Corp , 株式会社東芝
发明人： INOUE NAOYUKI
IPC分类号： H01L25/07 , H01L23/48 , H01L25/18
CPC分类号： H01L2224/34 , H01L2224/37147 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00 , H01L2224/37599 , H01L2924/00012 , H01L2224/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element that is hard to get affected by noise and has high reliability.SOLUTION: A semiconductor device is provided with: a semiconductor element having a first main electrode, a second main electrode, and a control electrode for controlling the energization between the first electrode and the second electrode; a first wiring connected to the first main electrode; a second wiring connected to the second main electrode; and a third wiring connected to the control electrode. On the second wiring, the first wiring and the third wiring cross each other, and the third wiring is located between the first wiring and the second wiring.
摘要翻译：要解决的问题：提供难以被噪声影响并具有高可靠性的半导体元件。解决方案：半导体器件设置有：具有第一主电极，第二主电极和控制电极的半导体元件用于控制第一电极和第二电极之间的通电; 连接到第一主电极的第一布线; 连接到第二主电极的第二布线; 以及连接到控制电极的第三布线。在第二布线上，第一布线和第三布线彼此交叉，第三布线位于第一布线和第二布线之间。

3. 发明专利

JPH07138753A SPUTTERING DEVICE AND SPUTTERING METHOD 失效
公开(公告)号：JPH07138753A
公开(公告)日：1995-05-30
申请号：JP32352093
申请日：1993-12-22
申请人： TOSHIBA CORP
发明人： ICHIHARA KATSUTARO , OKUBO MICHIKO , INOUE NAOYUKI , YASUDA NOBURO
IPC分类号： C23C14/35 , H01L21/203
摘要： PURPOSE:To provide the sputtering device capable of forming thin films having good quality over a large area with good reproducibility. CONSTITUTION:A substrate 3 to be formed with the thin films on its surface and a magnetron sputtering source 5 which is commonly used as a target holder for holding the target 51 and is integrated with an electric field supplying means and main magnetic field supplying means for forming magnetron plasma near the target 51 are disposed to face each other within a film forming vessel 1. Further, the sputtering device includes an electromagnet 8 as an auxiliary magnetic field supplying means for decreasing the spatial dispersion quantity of the magnetron plasma near the surface of the substrate 3.

4. 发明专利

JPS6251027A MAGNETIC RECORDING MEDIUM AND ITS PRODUCTION 失效
公开(公告)号：JPS6251027A
公开(公告)日：1987-03-05
申请号：JP18991385
申请日：1985-08-30
申请人： TOSHIBA CORP
发明人： SAITO MITSUYOSHI , SEKINE KUNIO , INOUE NAOYUKI , KANAMARU MASAYUKI
IPC分类号： G11B5/84 , G11B5/64 , G11B5/71 , G11B5/72
摘要： PURPOSE:To maintain always good lubricity over a long period of time by preliminarily impregnating a lubricating oil into non-woven fabrics facing surfaces on which lubricating oil films having a specific thickness are formed. CONSTITUTION:Both faces of a magnetic recording medium body 1 contact slidingly with the non-woven fabrics 5, 6 when the magnetic recording medium body 1 rotates. As a result, the lubricating oil impregnated to the non-woven fabrics 5, 6 and the lubricating oil coated on both faces of the body 1 are transferred and received to and from the body 1 and the non-woven fabrics 5, 6 and attain an equil. state in an extremely short period. Since the non-woven fabrics 5, 6 are in sliding contact with the surfaces of the body 1 at all times, the thin and uniform lubricating oil film is maintained for a long period of time on the surfaces of the body 1. Frictional force is extremely small and stable if the thickness of the lubricating oil film is

5. 发明专利

JP2012199435A Power semiconductor device 审中-公开
标题翻译：功率半导体器件
公开(公告)号：JP2012199435A
公开(公告)日：2012-10-18
申请号：JP2011063314
申请日：2011-03-22
申请人： Toshiba Corp , 株式会社東芝
发明人： YABUSAKI MUNEHISA , INOUE NAOYUKI
IPC分类号： H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having high withstanding voltage and low on-resistance.SOLUTION: A semiconductor device of an embodiment comprises a drift layer 1 of a first conductivity type, a first semiconductor layer 2 of the first conductivity type, a plurality of base layers 4 of a second conductivity type, a plurality of source layers 5 of the first conductivity type, a second semiconductor layer 3 and a gate electrode 7. The gate electrode includes a first part 7A and a second part 7B. The plurality of base layers include a first base layer 4A, a second base layer 4B adjacent to the first base layer 4A and a third base layer 4C adjacent to the first base layer in addition. The first part of the gate electrode extends in a first direction on the first semiconductor layer striding the first base layer and the second base layer. The second part of the gate electrode extends in a second direction on the first semiconductor layer striding the first base layer and the third base layer. The first part and the second part intersect at an intersection, and directly below the intersection, the second semiconductor layer reaching the drift layer is formed on a surface of the first semiconductor layer.
摘要翻译：要解决的问题：提供具有高耐压和低导通电阻的半导体器件。解决方案：实施例的半导体器件包括第一导电类型的漂移层1，第一导电类型的第一半导体层2，第二导电类型的多个基极层4，多个源极层第一导电类型的第一部分7A，第二半导体层3和栅极电极7.栅电极包括第一部分7A和第二部分7B。多个基层包括第一基底层4A，与第一基底层4A相邻的第二基底层4B和与第一基底层相邻的第三基底层4C。栅电极的第一部分在跨越第一基层和第二基层的第一半导体层上沿第一方向延伸。栅电极的第二部分在跨越第一基极层和第三基极层的第一半导体层上沿第二方向延伸。第一部分和第二部分在交叉点相交，并且在交叉点的正下方，到达漂移层的第二半导体层形成在第一半导体层的表面上。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2005243713A Power module and mounting board 审中-公开
标题翻译：电源模块和安装板
公开(公告)号：JP2005243713A
公开(公告)日：2005-09-08
申请号：JP2004048241
申请日：2004-02-24
申请人： Toshiba Corp , 株式会社東芝
发明人： MIYAKE EITARO , INOUE NAOYUKI
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L2224/48091 , H01L2224/48472 , H01L2924/01322 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a power module which operates with a stable high current with a reduced parasitic inductance concerning transient currents. SOLUTION: The power module mounts a plurality of semiconductor chips 18a-18d each flowing a main current between a first and second main electrodes in the interior. The module inside comprises insulation board structures (14a-14d), connection terminals disposed separately from each other on the insulation board structures (14a-14d) with inner connection terminals formed by bending first ends of the terminals away from the board structures (14a-14d) and bonding the bottoms of remaining parts to the insulation board structures (14a-14d), and short-circuit members 31h for electrically short-circuiting the inner connection terminals of the plurality of wiring boards 16a-16d. First main electrodes of corresponding semiconductor chips 18a-18d among the plurality of semiconductor chips 18a-18d are electrically independently connected to the plurality of wiring boards 16a-16d, respectively. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种功率模块，其工作在稳定的大电流下，具有减小的瞬态电流的寄生电感。解决方案：功率模块安装多个在内部的第一和第二主电极之间流过主电流的半导体芯片18a-18d。内部的模块包括绝缘板结构（14a-14d），在绝缘板结构（14a-14d）上彼此分开设置的连接端子，内部连接端子通过使端子的第一端远离板结构（14a- 14d），将剩余部分的底部粘合到绝缘板结构（14a-14d），以及用于使多个布线板16a-16d的内部连接端子短路的短路部件31h。多个半导体芯片18a-18d中的对应半导体芯片18a-18d的第一主电极分别电连接到多个布线板16a-16d。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2003023158A High withstand voltage semiconductor device 有权
标题翻译：高耐电压半导体器件
公开(公告)号：JP2003023158A
公开(公告)日：2003-01-24
申请号：JP2001206924
申请日：2001-07-06
申请人： Toshiba Corp , 株式会社東芝
发明人： HIYOSHI MICHIAKI , HASEGAWA SHIGERU , INOUE NAOYUKI , HARADA TATSUO
IPC分类号： H01L29/06 , H01L29/40 , H01L29/739 , H01L29/78
CPC分类号： H01L29/405 , H01L29/7395
摘要： PROBLEM TO BE SOLVED: To prevent any adverse influence of parasitic currents running through a terminating region in a high withstand voltage semiconductor device having a reserved terminating configuration.
SOLUTION: An IGBT chip is provided with an operation region R1 where an IGBT is arranged and an isolated region R2 and a terminating region R3 in the surrounding of the operation region R1. A P
+ type first diffusion layer 32 is formed in the surface of an N
- type first base layer 12 across the operation region R1 and the terminating region R3. Then, a P
- type second diffusion area 34 is formed so as to be overlapped with the first diffusion area 32, and to be extended in the terminating area R3. A first contact electrode 40 electrically connected to an emitter electrode 26 of the IGBT is brought into contact with the first diffusion layer 32 in the operation region R1. A second contact electrode 42 is brought into contact with the first diffusion region 32 in the terminating region R3. The first and second contact electrodes 40 and 42 are electrically connected through a connection electrode 41 arranged in the isolated region R2 to each other.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了防止在具有保留的端接配置的高耐压半导体器件中通过端接区域的寄生电流的任何不利影响。解决方案：IGBT芯片设置有布置IGBT的操作区域R1和操作区域R1周围的隔离区域R2和端接区域R3。在N +型第一基极层12的表面上，跨越工作区域R1和端接区域R3形成P ++型的第一扩散层32。然后，形成P +型第二扩散区域34，以便与第一扩散区域32重叠，并在端接区域R3中延伸。电连接到IGBT的发射极26的第一接触电极40与操作区域R1中的第一扩散层32接触。第二接触电极42与终止区域R3中的第一扩散区域32接触。第一和第二接触电极40和42通过布置在隔离区域R2中的连接电极41彼此电连接。

8. 发明专利

JPH09305930A MAGNETIC RECORDING/REPRODUCING HEAD AND MANUFACTURE OF THE SAME 失效
公开(公告)号：JPH09305930A
公开(公告)日：1997-11-28
申请号：JP5867397
申请日：1997-03-13
申请人： TOSHIBA CORP
发明人： YODA HIROAKI , HORI AKIO , HARA MICHIKO , INOUE NAOYUKI , OHSAWA YUICHI , HASHIMOTO SUSUMU , SAKAKUBO TAKEO , OZAWA NORIO , SASHO TERUO
IPC分类号： G11B5/39
摘要： PROBLEM TO BE SOLVED: To improve forming accuracy of the recording coil and recording track width of a recording coil located at the upper position in a magnetic recording/reproducing head structured by stacking a shield type MR head and an induction type magnetic recording head. SOLUTION: An MR film 34 having a pair of leads 35 is formed on a lower side shield layer 32 via a lower side reproducing magnetic gap film 33, an upper side shield layer 37 is formed on this MR film 34 via the upper side reproducing magnetic gap film 36 and a reproducing head 30 consisting of the shield type MR head is also formed. A recording head 40 consisting of an induction type magnetic head is structured by forming an upper side magnetic pole 42 on the lower side magnetic pole consisting of a magnetic material layer working as an upper side shield layer 37 via a recording magnetic gap film 41 and also forming a recording coil 43 to supply a recording magnetic flux to these magnetic poles 37, 42. The lower side magnetic pole 37 working as the upper side shield layer is provided with a hole 46 to lead out the electrode to guide the lead 35 of MR element.

9. 发明专利

JPH07307012A MAGNETO-RESISTIVE HEAD AND RECORDING AND REPRODUCING SEPARATION TYPE MAGNETIC HEAD 失效
公开(公告)号：JPH07307012A
公开(公告)日：1995-11-21
申请号：JP21737994
申请日：1994-09-12
申请人： TOSHIBA CORP
发明人： YODA HIROAKI , SAWABE ATSUHITO , HORI AKIO , IWASAKI HITOSHI , INOUE NAOYUKI
IPC分类号： G11B5/39
摘要： PURPOSE:To obtain a magneto-resistive head of a shielding type capable of dealing with such a high recording density system of a surface recording density exceeding, for example, Gb/inch . CONSTITUTION:This magneto-resistive magnetic head 21 is formed by clamping a magneto-resistance effect film 14 connected with a pair of leads 16 and having a magnetic field response part 14a by a pair of upper and lower shielding layers 12, 20 via insulating films 13, 18 for forming a magnetic gap. The head is so formed as to satisfy Ws

10. 发明专利

JPH07130572A METHOD OF PROCESSING MAGNETIC THIN FILM 失效
公开(公告)号：JPH07130572A
公开(公告)日：1995-05-19
申请号：JP21541294
申请日：1994-09-09
申请人： TOSHIBA CORP
发明人： ICHIHARA KATSUTARO , OKUBO MICHIKO , INOUE NAOYUKI
IPC分类号： C23F4/00 , H01F10/08 , H01F10/32 , H01F41/14 , H01F41/34
摘要： PURPOSE:To provide a magnetic thin film processing method which is excellent in material selectivity and profitability and capable of finely patterning a magnetic thin film. CONSTITUTION:A mask patterned as prescribed is laid on a magnetic thin film formed of magnetic material which contains at least one element out of Fe, Co, and Ni, reactive gas is fed to an exposed part of the magnetic thin film to react with magnetic material, and then the magnetic thin film of the exposed part is removed for patterning the magnetic thin film as prescribed, wherein mixed gas of activated halogen gas and steam, or an activated gas of five-membered carboning compund of monoxide or hydrocarbon base is used as reactive gas to react with magnetic material.

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