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1. 发明专利

JP2013251336A Magnetic storage element and manufacturing method of magnetic memory 审中-公开
标题翻译：磁记忆的磁性储存元件和制造方法
公开(公告)号：JP2013251336A
公开(公告)日：2013-12-12
申请号：JP2012123440
申请日：2012-05-30
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAYAMA MASAHIKO , AIKAWA HISANORI , TOKO MASARU , YODA HIROAKI , KISHI TATSUYA , IKEGAWA SUMIO
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10
CPC分类号： H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To maintain the magnetization state of a magnetic storage element even when the magnetic storage element underwent a reflow process.SOLUTION: A magnetic storage element 20 includes: a storage layer 30; a first non-magnetic layer 31 provided adjacent to the storage layer 30; a reference layer 32 provided adjacent to the first non-magnetic layer 31 and including a ferrimagnetic material; a second non-magnetic layer 33 provided adjacent to the reference layer 32; and an adjustment layer 34 provided adjacent to the second non-magnetic layer 33. A manufacturing method of a magnetic memory 11 including the magnetic storage element 20 includes the steps of: packaging the magnetic memory 11 and forming a memory package 10; and joining the memory package 10 to a substrate 18 by reflow soldering. A reflow temperature in the reflow process is set to a temperature that is equal to or higher than a compensation temperature of the reference layer 32 and is equal to or lower than Neel temperature.
摘要翻译：要解决的问题：即使当磁存储元件经受回流处理时，也能保持磁存储元件的磁化状态。解决方案：磁存储元件20包括：存储层30; 与存储层30相邻设置的第一非磁性层31; 设置在第一非磁性层31附近并包括铁磁材料的参考层32; 与参考层32相邻设置的第二非磁性层33; 以及与第二非磁性层33相邻设置的调整层34.包括磁性存储元件20的磁性存储器11的制造方法包括以下步骤：包装磁性存储器11并形成存储器组件10; 并通过回流焊接将存储器封装10连接到衬底18。回流处理中的回流温度设定为等于或高于参考层32的补偿温度并且等于或低于Neel温度的温度。

2. 发明专利

JP2013053324A Sputtering target and method of manufacturing magnetic memory using the same 有权
标题翻译：溅射目标和使用其制造磁记忆的方法
公开(公告)号：JP2013053324A
公开(公告)日：2013-03-21
申请号：JP2011190868
申请日：2011-09-01
申请人： Toshiba Corp , 株式会社東芝 , Ube Material Industries Ltd , 宇部マテリアルズ株式会社
发明人： KITAGAWA EIJI , DAIBO TATATOMI , NOMA KENJI , KAI TADASHI , YAMAKAWA KOJI , NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , UEDA KOJI , WATANABE DAISUKE , YODA HIROAKI , SANO SATOSHI , NISHIMURA YOSHIHIRO , WATANABE TAKAYUKI , KATO YUZO , UEKI AKIRA
IPC分类号： C23C14/34 , C04B35/053 , C23C14/08 , H01L21/8246 , H01L27/105 , H01L43/10 , H01L43/12
CPC分类号： C23C14/082 , C23C14/3414 , G11C11/161 , H01L27/228 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target that can improve an MR ratio of a magnet tunnel junction element, and to provide a method of manufacturing a magnetic memory using the same.SOLUTION: There are provided the sputtering target including a target body 10 that has MgO as a main component and a thickness of 3 mm or smaller, and also the method of manufacturing a magnetic memory using the sputtering target which can improve an MR ratio.
摘要翻译：要解决的问题：提供能够提高磁体隧道结元件的MR比的溅射靶，并提供使用该溅射靶的磁性存储器的制造方法。解决方案：提供了包括具有MgO作为主要成分并且厚度为3mm以下的靶体10的溅射靶，以及使用能够改善MR的溅射靶的磁性存储器的制造方法比。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2013016560A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2013016560A
公开(公告)日：2013-01-24
申请号：JP2011146718
申请日：2011-06-30
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIYAMA KATSUYA , AIKAWA HISANORI , KAI TADASHI , NAGASE TOSHIHIKO , UEDA KOJI , YODA HIROAKI
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To cancel a leaked magnetic field which increases as a magnetoresistive element makes microfabricated.SOLUTION: A magnetoresistive element according to an embodiment comprises: a storage layer 2, magnetization of which is vertical and variable; a reference layer 4, magnetization of which is vertical and invariant; a shift adjustment layer 6, magnetization of which is vertical, invariant, and reverse to the magnetization of the reference layer 3; a first non-magnetic layer 3 provided between the storage layer 2 and the reference layer 4; and a second non-magnetic layer 5 provided between the reference layer 4 and the shift adjustment layer 6. A reverse magnetic field of the reference layer 4 is equal to or smaller than a reverse magnetic field of the storage layer 2. A magnetic relaxation constant of the reference layer 4 is bigger than a magnetic relaxation constant of the storage layer 2.
摘要翻译：要解决的问题：消除随着磁阻元件微制造而增加的泄漏磁场。解决方案：根据实施例的磁阻元件包括：存储层2，其磁化是垂直的和可变的; 参考层4，其磁化是垂直和不变的; 移位调整层6，其磁化是垂直的，不变的，并且与参考层3的磁化相反; 设置在存储层2和参考层4之间的第一非磁性层3; 以及设置在参考层4和移位调整层6之间的第二非磁性层5.参考层4的反向磁场等于或小于存储层2的反向磁场。磁性弛豫常数参考层4的厚度大于存储层2的磁性松弛常数。版权所有：（C）2013，JPO＆INPIT

4. 发明专利

JP2012094894A Magnetoresistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：JP2012094894A
公开(公告)日：2012-05-17
申请号：JP2011286353
申请日：2011-12-27
申请人： Toshiba Corp , 株式会社東芝
发明人： OSEGI JUNICHI , SHIMOMURA NAOHARU , IKEGAWA SUMIO , KAI TADASHI , NAKAYAMA MASAHIKO , AIKAWA HISANORI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To reduce a leakage field applied to a memory layer as much as possible.SOLUTION: A magnetoresistance effect element comprises a ferromagnetic layer 10 having magnetic anisotropy in the direction perpendicular to the film surface, a first nonmagnetic layer 8 provided on the ferromagnetic layer, a reference layer 6 provided on the first nonmagnetic layer and having magnetic anisotropy in the direction perpendicular to the film surface, magnetization anti-parallel with the direction of magnetization of the ferromagnetic layer and a film thickness equal to 1/2.8-1/1.5 that of the ferromagnetic layer in the lamination direction, a second nonmagnetic layer 8 provided on the reference layer, and a memory layer 2 provided on the second nonmagnetic layer and having magnetic anisotropy in the direction perpendicular to the film surface, and direction of magnetization which changes by action of spin-polarized electrons.
摘要翻译：要解决的问题：尽可能减少施加到存储器层的泄漏场。解决方案：磁阻效应元件包括在垂直于膜表面的方向上具有磁各向异性的铁磁层10，设置在铁磁层上的第一非磁性层8，设置在第一非磁性层上并具有磁性的参考层6 在垂直于膜表面的方向上的各向异性，与铁磁层的磁化方向平行的磁化强度和层叠方向上的铁磁层的磁化强度等于1 / 2.8-1 / 1.5的膜厚度，第二非磁性层 8，以及设置在第二非磁性层上并且在垂直于膜表面的方向上具有磁各向异性的存储层2以及由自旋极化电子的作用而改变的磁化方向。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2010080733A Magnetoresistive element, and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2010080733A
公开(公告)日：2010-04-08
申请号：JP2008248418
申请日：2008-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , YOSHIKAWA MASATOSHI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To allow the reduction of an inversion current upon magnetization inversion of a recording layer. SOLUTION: A magnetoresistive element includes: a piezoelectric layer 11 wherein a lattice expands/contracts due to application of a voltage; a recording later 12 which is formed on the piezoelectric layer and has a magnetic anisotropy in a direction perpendicular to a layer surface and changes the direction of magnetization by action of spin-polarized electrons; a first nonmagnetic layer 13 provided on the recording layer, and a reference layer 14 which is provided on the first nonmagnetic layer and has a magnetic anisotropy in a direction perpendicular to the layer surface. A thermal disturbance resistance of the recording layer upon voltage application for reading is higher than that upon voltage application for writing. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：允许在记录层的磁化反转时减小反转电流。解决方案：磁阻元件包括：压电层11，其中晶格由于施加电压而膨胀/收缩; 在压电层上形成的记录物12，在垂直于层面的方向上具有磁各向异性，并通过自旋极化电子的作用改变磁化方向; 设置在记录层上的第一非磁性层13和设置在第一非磁性层上并且在垂直于层表面的方向上具有磁各向异性的参考层14。电压施加时的记录层的热干扰电阻高于写入用电压时的耐热干扰性。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009081216A Magnetoresistance effect element and magnetic random access memory using the same 有权
标题翻译： MAGNETORESISTANCE效应元件和磁性随机存取存储器使用它
公开(公告)号：JP2009081216A
公开(公告)日：2009-04-16
申请号：JP2007248251
申请日：2007-09-25
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASATOSHI , KITAGAWA EIJI , DAIBO TADAOMI , NAGASE TOSHIHIKO , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a low-resistance magnetoresistance effect type element of a spin-injection writing system.
SOLUTION: A crystallization promoting film is formed to promote crystallization in contact with an interfacial magnetic film having an amorphous structure, thus promoting crystallization from the side of a tunnel barrier layer, and adjusting the interface between the tunnel barrier layer and the interfacial magnetic film layer. With this arrangement, it is possible to obtain the magnetoresistance effect element that has low resistance so as to obtain a desired current value, and has a high TMR ratio.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供自旋注入书写系统的低电阻磁阻效应型元件。解决方案：形成结晶促进膜以促进与具有无定形结构的界面磁性膜接触的结晶，从而促进从隧道势垒层侧的结晶，并调节隧道势垒层与界面之间的界面磁膜层。通过这种布置，可以获得具有低电阻以获得期望电流值并且具有高TMR比的磁阻效应元件。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008252037A Magnetoresistive element, and magnetic memory 审中-公开
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2008252037A
公开(公告)日：2008-10-16
申请号：JP2007094887
申请日：2007-03-30
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASAHISA , KITAGAWA EIJI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To further reduce a writing current required for magnetization reversal. SOLUTION: A magnetoresistive element 10 is provided with a fixed layer 11 having a fixed magnetization direction; a free layer 13 having a magnetization direction variable due to energization in a direction perpendicular to a film surface; an assisting layer 15 having a magnetization direction variable due to energization in a direction perpendicular to the film surface, and assisting a change in magnetization direction of the free layer 13; an intermediate layer 12 provided between the fixed layer 11 and the free layer 13 and made of a non-magnetic body; and an intermediate layer 14 provided between the free layer 13 and the assisting layer 15 and made of a non-magnetic body. An energy barrier for magnetization reversal of the assisting layer 15 is smaller than an energy barrier for magnetization reversal of the free layer 13. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：进一步减少磁化反转所需的写入电流。解决方案：磁阻元件10设置有具有固定的磁化方向的固定层11; 自由层13，由于在与膜表面垂直的方向上通电而具有可变化的磁化方向; 辅助层15由于在垂直于膜表面的方向通电而具有可变化的磁化方向，并辅助自由层13的磁化方向的变化; 设置在固定层11和自由层13之间并由非磁性体制成的中间层12; 以及设置在自由层13和辅助层15之间并由非磁性体制成的中间层14。辅助层15的磁化反转的能量势垒小于自由层13的磁化反转的能量势垒。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008187048A MAGNETORESISTIVE EFFECT ELEMENT 审中-公开
公开(公告)号：JP2008187048A
公开(公告)日：2008-08-14
申请号：JP2007019973
申请日：2007-01-30
申请人： TOSHIBA CORP
发明人： YOSHIKAWA MASAHISA , KITAGAWA EIJI , SHIMOMURA NAOHARU , IKEGAWA SUMIO , KISHI TATSUYA , YODA HIROAKI , UEDA TOMOMASA
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To achieve both reduction in writing currents and improvement in MR ratio at reading. SOLUTION: The magnetoresistive effect element comprises first and second ferromagnetic layers 11A and 11B of which magnetizing directions are fixed mutually opposite; a third ferromagnetic layer 12, which is arranged between the first and second ferromagnetic layers 11A and 11B with magnetizing direction changing; a first non magnetic layer 13A arranged between the first ferromagnetic layer 11A and the third ferromagnetic layer 12; and a second non magnetic layer 13B arranged between the second ferromagnetic layer 11B and the third ferromagnetic layer 12. When a reading voltage Ir is biased, MR ratio of a first unit U1 is in inverse state, while the MR ratio of a second unit U2 is in normal state. When writing voltages Iw"0" and Iw"1" are biased, the MR ratio of the first and second units U1 and U2 are both in the normal state. COPYRIGHT: (C)2008,JPO&INPIT

9. 发明专利

JP2008085170A Magnetoresistance effect-type element and magnetoresistance effect-type random access memory 有权
标题翻译：磁阻效应类型元素和磁阻效应类型随机访问存储器
公开(公告)号：JP2008085170A
公开(公告)日：2008-04-10
申请号：JP2006265201
申请日：2006-09-28
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASATOSHI , KAI TADASHI , NAGASE TOSHIHIKO , KITAGAWA EIJI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/10 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F41/307 , H01L27/228 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect-type element capable of having a high TMR ratio by a low area resistance (RA) and capable of performing the writing with a low current. SOLUTION: This element contains a laminated film comprising: a magnetization free layer 6 having a magnetic layer in which the orientation of the magnetization is variable; a magnetization fixed layer 2 having a magnetic layer in which the orientation of the magnetization is fixed; an inter layer 4 provided between the magnetization free layer 6 and the magnetization fixed layer 2, wherein the inter layer 4 comprises: an oxide containing an element selected from Ca, Mg, Sr, Ba, Ti and Sc, and B; and by applying the current in the both direction to the magnetization free layer and magnetization fixed layer between which the inter layer is interposed, the inversion of the magnetization in the magnetization free layer 6 is possible. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够通过低面积电阻（RA）具有高TMR比并且能够以低电流执行写入的磁阻效应型元件。解决方案：该元件包含层压膜，包括：具有磁化层的磁化层的磁化自由层6，其中磁化的取向可变; 具有固定磁化取向的磁性层的磁化固定层2; 设置在磁化自由层6和磁化固定层2之间的中间层4，其中层间4包括：含有选自Ca，Mg，Sr，Ba，Ti和Sc的元素的氧化物，以及B; 并且通过将电流在两个方向上施加到其间插入的磁化自由层和磁化固定层，磁化自由层6中的磁化的反转是可能的。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2008047257A Magnetic storage element, magnetic memory furnished with this magnetic storage element, and driving method of magnetic memory 有权
标题翻译：磁性存储元件，磁性存储元件和磁性存储器的驱动方法
公开(公告)号：JP2008047257A
公开(公告)日：2008-02-28
申请号：JP2006224012
申请日：2006-08-21
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , YOSHIKAWA MASATOSHI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： G11C11/1693 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To attain the prevention of an erroneous writing operation at the read-out.
SOLUTION: A width of a write-in current pulse for writing information into a magnetic storage layer is larger than a width of a read-out current pulse for reading the information from the magnetic storage layer.
COPYRIGHT: (C)2008,JPO&INPIT

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