专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPS58110487A PREVENTING DEVICE FOR TRANSVERSE MOVEMENT OF PULLING SHAFT IN PULLING MACHINE FOR SEMICONDUCTOR 失效
公开(公告)号：JPS58110487A
公开(公告)日：1983-07-01
申请号：JP20583381
申请日：1981-12-19
申请人： TOSHIBA MACHINE CO LTD , TOSHIBA CERAMICS CO
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , SUGIYAMA HISATAKA , TADA YOSHIAKI , OOISHI TOSHIO , HONMA KAZUMOTO , KAWANABE ASAJI , HASEBE HITOSHI
IPC分类号： C30B15/30 , H01L21/208
摘要： PURPOSE:To stably rotate a pulling shaft and to carry out satisfactory pulling by providing guides which enclose the shaft in a rotatable state and can be attached to and detached from the shaft and a guide releasing means to separate the guides. CONSTITUTION:At the beginning of pulling, a gude opening and shutting plate 30 is set at the lowest position. At this time, narrow parts 31, 32, 33 are positioned among guides 26a, 26b, 27a, 27b, 28a, 28b. The guides are shut by means of springs 29, and by pressing the guides against the narrow part of the plate 30 by the spring force, the guides are held at positions which are symmetrical with respect to a pulling shaft 19. The shut guides are slightly opened by hand against the springs 29, and rings 42 are put in the recessed parts 43 and grasped. A seed 22 is then brought into contact with a melt 12 in a crucible 11, and by rotating a frame 15 by a motor 17, the pulling shaft 19 is rotated to grow a single crystal ingot 13. The transverse movement of the shaft 19 is prevented by the guides through the rings 42.

2. 发明专利

JPS5632396A SILICON SINGLE CRYSTAL PULLING APPARATUS 失效
公开(公告)号：JPS5632396A
公开(公告)日：1981-04-01
申请号：JP10482379
申请日：1979-08-17
申请人： TOSHIBA CERAMICS CO
发明人： MATSUO HIDEYASU , KAWANABE ASAJI , KARITA AKIO
IPC分类号： C30B15/10 , C30B15/12 , C30B29/06
摘要： PURPOSE:To manufacture a high purity silicon single crystal by dividing a graphite protector holding a quartz crucible into at least two parts and by covering the whole surface of the protector with a silicon carbide film or a silicon nitride film. CONSTITUTION:A graphite protector is divided into a least two parts to prevent the occurrence of cracks due to a difference between the protector and its coat in thermal expansion coefficient. For example, the outside of quartz crucible body 4 in chamber 1 is enclosed with graphite protector 6 set on fixed ring 7 on rotating support rod 3. Protector 6 is divided inot two parts in the longitudinal direction, and the whole surface is covered with >=10mum thick silicon carbide film 5. Starting material charged into crucible 2 and heated with heater 8. Rod 3 is rotated. Seed crystal 14 attached to the lower end of pulling chain 15 is dipped in molten silicon 16 in crucible 2 and pulled up while being rotated to obtain a silicon single crystal. Crucible 2 is heated to 1,300-1,500 deg.C and protector 6 is thermally expanded, yet the expansion is absorbed in the divided and joined portion. Accordingly, no crack occurs and the generation of CO and SiO is prevented to inhibit carbon and oxygen from mixing into silicon 16.

3. 发明专利

JPS59121182A BLOWING INERT GAS IN PULLING MACHINE 失效
公开(公告)号：JPS59121182A
公开(公告)日：1984-07-13
申请号：JP22769782
申请日：1982-12-28
申请人： TOSHIBA MACHINE CO LTD , TOSHIBA CERAMICS CO
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , SUGIYAMA HISATAKA , TADA YOSHIAKI , OOISHI TOSHIO , KAWANABE ASAJI , HASEBE HITOSHI
IPC分类号： C30B15/00
摘要： PURPOSE:To enable improved pulling of single crystal, by blowing an inert gas into a chamber of a pulling machine of single crystal using a pulling shaft of a flexible material in such a way that the inert gas is introduced to a position apart from the pulling shaft in order to prevent the direct contact of the gas with the pulling shaft. CONSTITUTION:The baffle plate 11 is put between the feed opening 10 for blowing an inert gas into the pulling chamber 7 of a pulling machine of single crystal and the pulling shaft 5 of a flexible material. When an inert gas is blown from the feed opening 10, the inert gas strikes the baffle plate 11, separates into the left and right sides of the pulling shaft 5, passes through a position apart from the pulling shaft 5 and is introduced to the upper part of the pulling chamber 7. Consequently, the vibration of the pulling shaft 5 caused by the blowing of the inert gas, shaking of ingot of single crystal depending upon it is suppressed, so that improved pulling is made possible.

4. 发明专利

JPS5836998A PULLING UP DEVICE FOR SINGLE CRYSTAL SILICON 失效
公开(公告)号：JPS5836998A
公开(公告)日：1983-03-04
申请号：JP13347381
申请日：1981-08-26
申请人： TOSHIBA CERAMICS CO
发明人： KAWANABE ASAJI
IPC分类号： C30B15/14 , C30B29/06
摘要： PURPOSE:To improve thermal efficiency and the quality of single crystal Si by providing a reflection plate of a recessing shape above the crucible in a chamber in such a way that the focus thereof is formed annularly on the molten Si surface on the side outer than the outside circumference of an ingot. CONSTITUTION:In the stage of producing single crystal Si by a Czochralski method, a reflection plate 8 of which the surface facing a crucible 2 assumes a recessing shape reflects the radiation heat emitted from the liquid surface of molten Si 12. Since the focus of the plate 8 is formed annularly on the liquid surface of the Si 12 on the side outer than the single crystal ingot, only the Si 12 is heated and thermal efficiency is improved. As a result, there is no need for heating a graphite heater 5 to high temp. and electric power consumption is economized. Since the oxidation of the heater 5 can be suppressed, the inclusion of carbon impurities into the single crystal ingot can be decreased. Further, the heating of the crucible 2 made of quartz geaphite to high temp. is prevented and the reaction of the crucible 2 and the Si 12 is suppressed, whereby the inclusion of oxygen impurities in the ingot is decreased.

5. 发明专利

JPS59156992A Recharging device for semiconductor-crystal pulling-up machine 失效
标题翻译：用于半导体水晶拉丝机的充电装置
公开(公告)号：JPS59156992A
公开(公告)日：1984-09-06
申请号：JP2739683
申请日：1983-02-21
申请人： Toshiba Ceramics Co Ltd , Toshiba Mach Co Ltd
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , SUGIYAMA HISATAKA , TADA YOSHIAKI , OOISHI TOSHIO , KAWANABE ASAJI , HASEBE HITOSHI , MATSUDA MASATO
IPC分类号： C30B15/02 , H01L21/208
CPC分类号： C30B15/02
摘要： PURPOSE:To prevent contamination of impurities by scratches and generation of a bridge and to carry out surely the supply of starting materials by forming the inner surface of a cylindrical body through which semiconductor starting materials are charged to a crucible by opening the bottom plate, with a specified ceramic sintered body. CONSTITUTION:When a stopper 27 of a recharging device is abutted to a stopper receiver 33, and a suspender 23 is further lowered, the lowering of an outer cylinder 4 and a cylindrical body 1 is hindered by the stopper receiver 33. Since only a wire 19 is lowered, a bottom plate 17 is pressed and opened by the own-weight of lump semiconductor starting materials 28 contained thereon, and said materials 28 are charged into a crucible. At this time, when comparatively large amount of said materials 28 are contained in piles in the cylindrical body 1, a bridge A is apt to generate. Since the inner surface of the cylindrical body 1 in this recharging device is formed by a material such as a ceramic sintered body consisting mainly of Si3N4 or Si3N4 to which Y2O3, CeO3 or the like is added as a sintering assistant or a complex ceramic sintered body such as Si3N4 and Al2O3, the hardness at high temp. is high enough and the starting materials 28 fall surely without generation of the bridge A.
摘要翻译：目的：为了防止杂质受到划伤和产生桥梁的污染，并通过将半导体起始材料通过打开底板而将半导体起始材料装入坩埚的圆筒形体的内表面，确定地提供起始材料，规定的陶瓷烧结体。构成：当再充电装置的止动件27抵靠止动器接收器33并且悬挂器23进一步下降时，外筒4和圆筒体1的下降被止动器接收器33阻碍。由于只有线如图19所示，底板17被包含在其上的自身重量的半导体原料28按压并打开，并且将所述材料28装入坩埚中。此时，当在筒体1中堆积较多的所述材料28时，容易产生桥A. 由于该再充电装置中的圆筒体1的内表面由主要由添加有Y 2 O 3，CeO 3等的Si 3 N 4或Si 3 N 4构成的陶瓷烧结体，作为烧结助剂或复合陶瓷烧结体如Si3N4和Al2O3，高温下的硬度。足够高，起始材料28肯定下降而不产生桥A.

6. 发明专利

JPS5836999A PULLING UP DEVICE FOR SINGLE CRYSTAL SEMICONDUCTOR 失效
公开(公告)号：JPS5836999A
公开(公告)日：1983-03-04
申请号：JP13347481
申请日：1981-08-26
申请人： TOSHIBA CERAMICS CO
发明人： KAWANABE ASAJI
IPC分类号： C30B15/26 , H01L21/208
摘要： PURPOSE:To control the diameter of a single crystal semiconductor ingot without the influence of fluctuations in the melt surface of a molten semiconductor by disposing the photodetecting part of a control mechanism for the diameter of the ingot in the upper part of a chamber in such a way as to face the melt surface. CONSTITUTION:Since the radiation light of a melt surface is detected by a photodetecting part 16 disposed right above molten Si 12, the measuring place is constant despite the vertical fluctuation in the melt surface and the errors owing to the oscillation of an ingot are small. Further, a photodetecting part 16 is provided upper than an Ar gas supply port 9, sticking of gases such as SiO is difficult and the errors in measurement occurring in said sticking are small. Therefore, the accurate information relating to the diameter of the ingot is transmitted to a control mechanism for diameter not shown, and desirable control for diameter is accomplished. Since the outputting of unnecessary operation signals from the control mechanism for diameter is eliminated, the tendency toward an increase in the variance of the impurity concn. in the single crystal ingot is suppressed.

7. 发明专利

JPS5832100A DEVICE FOR PULLING UP SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPS5832100A
公开(公告)日：1983-02-24
申请号：JP12843781
申请日：1981-08-17
申请人： TOSHIBA CERAMICS CO
发明人： KAWANABE ASAJI
IPC分类号： C30B15/00 , C30B15/20 , C30B29/06
摘要： PURPOSE:In the device for pulling up a single crystal of silicon from high- purity silicon melt, the outlets for the inert gas in the pulling-up chamber are opened in a specific position at the lower part of the chamber to prevent the Si single crystal from being contaminated with SiO, CO or CO2. CONSTITUTION:When an Si single crystal is formed by the Chokralsky method, high-purity silicon is charged in the quartz crucible 3 in the chamber 1 and melted by heating with the graphite heaters 7 surrounding the crucible, then a seed single crystal 12 is dipped and gradually lifted up with the shaft 11. In this case, a plurality of gas-exhausting outlets 14 are opened at the annular part surrounded with a circle smaller than the periphery of the crucible protector 4 and another circle larger than the periphery of the heater 7. During the pulling- up of the Si single crystal, the inert gas fed from the top does not stay near the seed crystal and flows toward the outlet, thus preventing the single crystal of Si from being contaminated with SiO, CO or CO2 formed in the chamber to give the high-quality Si single crystal.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式