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1. 发明专利

JPS5895692A PULLING UP APPARATUS OF PULLING UP MACHINE FOR SEMICONDUCTOR CRYSTAL 失效
公开(公告)号：JPS5895692A
公开(公告)日：1983-06-07
申请号：JP19474381
申请日：1981-12-03
申请人： TOSHIBA MACHINE CO LTD , TOSHIBA CERAMICS CO
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , YAMA HISATAKA , TADA YOSHIAKI , OOISHI TOSHIO , HONMA KAZUMOTO , HASEBE HITOSHI , EBARA TOORU
IPC分类号： C30B15/30 , H01L21/208
摘要： PURPOSE:To prevent the transverse vibration of a pulling up shaft effectively in a pulling up machine for a semiconductor by the Czochralski method using the pulling up shaft consisting of a flexible material, by means of a specific moving bed. CONSTITUTION:A shaft 28 having a pulling up wire 1 attached therto and a seed 29 mounted to the bottom thereof is attached to a rotating shaft 27 rotatably mounted to a moving bed 21 through bearings 26, and the moving bed 21 is movable vertically along guide shafts 20 through guide rollers 22. A balancing weight 25 is attached to the moving bed 21 through a rope 24 and a pulley 23. The wire 1 is pullled up by a hoisting apparatus 12 while rotated, and a single crystal ingot 2 is grown from a raw material melt in a crucible 11. In the process, the moving bed 21 is guided by the guide shafts 20 to prevent the vibration of the respective members ranging from the wire 1 to the single crystal ingot 2 with certainty.

2. 发明专利

JPS5895691A PREVENTING APPARATUS FOR TRANSVERSE VIBRATION OF PULLING UP SHAFT IN PULLING UP MACHINE OF SEMICONDUCTOR 失效
公开(公告)号：JPS5895691A
公开(公告)日：1983-06-07
申请号：JP19474281
申请日：1981-12-03
申请人： TOSHIBA MACHINE CO LTD , TOSHIBA CERAMICS CO
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , SUGIYAMA HISATAKA , TADA YOSHIAKI , OOISHI TOSHIO , HONMA KAZUMOTO , HASEBE HITOSHI , EBARA TOORU
IPC分类号： C30B15/30 , H01L21/02 , H01L21/208
摘要： PURPOSE:To prevent the transverse vibration of a pulling up shaft effectively in a pulling up machine of a semiconductor by the Czochralski method using the pulling up shaft, by means of a guide moving synchronously with the pulling up shaft. CONSTITUTION:The other and inner cylinders 25 and 26 movable along a guide shaft 36 up and down are located at the lower end position, and a guide 29 previously engaged with a pulling up shaft 19, e.g. a flexible wire, is held by arms 27 and 28. A seed 22 is then brought into contact with a raw material melt in a crucible 11 and pulled up by rotating the pulling up shaft 19 with a hoisting apparatus 14 to grow a single crystal ingot 13. In the process, the outer and inner cylinders 25 and 26 are pulled up while connectedly driven by the above- mentioned operations, to make the distance between a seed chuck 23, and the guide 29 always constant. Thus, the transverse vibration of the pulling up shaft 19 is effectively prevented, and the number of revolutions of the pulling up shaft 19 can be set at the desired value to grow the aimed single crystal of good quality.

3. 发明专利

JPS58110487A PREVENTING DEVICE FOR TRANSVERSE MOVEMENT OF PULLING SHAFT IN PULLING MACHINE FOR SEMICONDUCTOR 失效
公开(公告)号：JPS58110487A
公开(公告)日：1983-07-01
申请号：JP20583381
申请日：1981-12-19
申请人： TOSHIBA MACHINE CO LTD , TOSHIBA CERAMICS CO
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , SUGIYAMA HISATAKA , TADA YOSHIAKI , OOISHI TOSHIO , HONMA KAZUMOTO , KAWANABE ASAJI , HASEBE HITOSHI
IPC分类号： C30B15/30 , H01L21/208
摘要： PURPOSE:To stably rotate a pulling shaft and to carry out satisfactory pulling by providing guides which enclose the shaft in a rotatable state and can be attached to and detached from the shaft and a guide releasing means to separate the guides. CONSTITUTION:At the beginning of pulling, a gude opening and shutting plate 30 is set at the lowest position. At this time, narrow parts 31, 32, 33 are positioned among guides 26a, 26b, 27a, 27b, 28a, 28b. The guides are shut by means of springs 29, and by pressing the guides against the narrow part of the plate 30 by the spring force, the guides are held at positions which are symmetrical with respect to a pulling shaft 19. The shut guides are slightly opened by hand against the springs 29, and rings 42 are put in the recessed parts 43 and grasped. A seed 22 is then brought into contact with a melt 12 in a crucible 11, and by rotating a frame 15 by a motor 17, the pulling shaft 19 is rotated to grow a single crystal ingot 13. The transverse movement of the shaft 19 is prevented by the guides through the rings 42.

4. 发明专利

JPH02138729A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02138729A
公开(公告)日：1990-05-28
申请号：JP14231889
申请日：1989-06-03
申请人： TOSHIBA CORP , TOSHIBA CERAMICS CO
发明人： WATANABE MASAHARU , HONMA KAZUMOTO
IPC分类号： H01L21/205
摘要： PURPOSE:To prevent any stacking fault in epitaxial layer from occurring by a method wherein a single crystal semiconductor substrate containing oxygen is heat-treated for specific time at specific temperature to increase the defectives and after heat treatment for another specific time at another specific temperature, the substrate is etched away. CONSTITUTION:Defectives within single crystal ingot to be a substrate or a single crystal substrate are increased by heat treating the substrate for specific time at the temperature e.g., of 600-900 deg.C. Then, the defectives creating the defect density e.g., exceeding 50 /cm are caused in this single crystal substrate when the single crystal substrate is examined by an optical microscope after heat treatment for 18 hours at the temperature e.g., of 1050 deg.C. Through these procedures, in such a semiconductor device wherein an epitaxial layer is formed on the semiconductor substrate, any stacking fault in the epitaxial layer can be prevented from occurring without augmenting the oxygen concentration in the substrate.

5. 发明专利

JPS62257723A MANUFACTURE OF SILICON WAFER 失效
公开(公告)号：JPS62257723A
公开(公告)日：1987-11-10
申请号：JP10055286
申请日：1986-04-30
申请人： TOSHIBA CERAMICS CO
发明人： HONMA KAZUMOTO , TAKASU SHINICHIRO , KASHIMA KAZUHIKO
IPC分类号： H01L21/261 , H01L21/26
摘要： PURPOSE:To reduce leakage currents when adding P by setting the exposure of rapid neutrons in irradiating neutrons to a specific quantity or less. CONSTITUTION:An silicon single crystal manufactured through a CZ method or an MCZ method is irradiated by neutrons, and an isotope Si contained in the silicon single crystal is converted into P . The exposure of fast neutrons in irradiating neutrons is brought to 3+10 /cm or less at that time. Accordingly, leakage currents at a time when P is added to the silicon single crystal having low oxygen content can be reduced.

6. 发明专利

JPS62256788A DEVICE FOR GROWING SINGLE CRYSTAL 失效
公开(公告)号：JPS62256788A
公开(公告)日：1987-11-09
申请号：JP10055486
申请日：1986-04-30
申请人： TOSHIBA CERAMICS CO
发明人： TAKASU SHINICHIRO , TAJI HIDEKAZU , HONMA KAZUMOTO , YAMATO MITSUHIRO
IPC分类号： C30B15/00 , C30B15/14 , C30B15/22 , C30B15/30 , C30B29/06 , H01L21/18 , H01L21/208
摘要： PURPOSE:To increase the life of a heating means by setting a specified condition between the diameter of a cylindrical heating means of a melt and the diameter of an electromagnetic coil arranged on the outside of the heating means and the interval between coils when a single crystal is grown from the melt of an electrically conductive substance by the CZ method. CONSTITUTION:The device for growing a single crystal is composed of a cylindrical crucible 11, the annular electrical heating means 15 arranged concentrically with the center axis of the crucible 11 on the outside of the crucible 11 and used for heating and melting the conductive substance in the crucible 11, a means provided to the heating means 15 and used for passing an electric current in zigzags in the longitudinal direction of the heating means 15, and a couple of electromagnetic coils 17 which are arranged symmetrically to the center axis of the crucible 11 on the outside of the heating means 15 and the centers of which are positioned at about the same height as the liq. surface of the molten conductive substance in the crucible 11. Besides, the diameter 2rc of the electromagnetic coil 17 is made larger than 0.8 times the diameter 2rh of the heating means 15, and the interval L between the coils 17 is made larger than 1.5 times the diameter 2rh of the heating means 15.

7. 发明专利

JPS5632397A SILICON SINGLE CRYSTAL PULLING APPARATUS 失效
公开(公告)号：JPS5632397A
公开(公告)日：1981-04-01
申请号：JP10482479
申请日：1979-08-17
申请人： TOSHIBA CERAMICS CO
发明人： MATSUO HIDEYASU , HONMA KAZUMOTO , IMANISHI YASUHIRO
IPC分类号： C30B15/10 , C30B15/12 , C30B29/06
摘要： PURPOSE:To obtain an apparatus for manufacturing a high quality silicon single crystal by covering a graphite substrate with a silicon nitride film with a silicon carbide film in-between to form a silicon melting crucible. CONSTITUTION:Crucible 2 is set on rotating support rod 3 in chamber 1. Crucible 2 is formed with graphite substrate 4 and silicon nitride film 6 covered on the substrate surface with silicon carbide film 5 in-between. Starting material is charged into crucible 2 and heated with heater 7. While rotating crucible 2 with rod 3, seed crystal 13 attached to the lower end of pulling chain 14 is dipped in molten silicon 15 and pulled up while being rotated to obtain a silicon single crystal having predetermined crystal orientation. Crucible 2 is heated to 1,300-1,500 deg.C, yet carbon and oxygen are prevented from mixing into silicon 15 owing to film 6 covering the outer surface of crucible 2. The presence of film 5 prevents the reduction of film 6 by substrate 4, and the formation of Si3N4 can be prevented.

8. 发明专利

JPS62257739A SILICON WAFER AND SELECTOR THEREOF 失效
公开(公告)号：JPS62257739A
公开(公告)日：1987-11-10
申请号：JP10055386
申请日：1986-04-30
申请人： TOSHIBA CERAMICS CO
发明人： HONMA KAZUMOTO , TAKASU SHINICHIRO , KASHIMA KAZUHIKO
IPC分类号： H01L21/66 , H01L21/26 , H01L21/261
摘要： PURPOSE:To select an Si wafer having excellent characteristics, and to obtain the Si wafer having superior characteristics by bringing transmission intensity to near infrared beams, a wavelength of which extends over a range of 1.0-1.4mum, of a neutron-exposure Si-conversion P-doped silicon wafer to 30% or more. CONSTITUTION:Beams from an incandescence source 1 for a selector for silicon wafers are condensed by a condenser lens 2, and projected to a silicon light- receiving element 6 through a silicon filter 3 having predetermined thickness and few additives and a silicon wafer 5 for measurement on a base plate 4. Voltage proportional to the amount of beams transmitted through the wafer 5 is generated in the light-receiving element 6, and the voltage is measured by an instrumentation indicator 7. The reference amount of transmission of a reference silicon wafer is measured by the device 7 in place of the wafer 5, and relative transmission intensity is obtained from the ratio of the amount of the transmission. The silicon wafers are selected so that transmission intensity to near infrared beams, a wavelength of which is kept within a range of 1.0-1.4mum, of a neutron-exposure Si-conversion P-doped silicon wafer is brought to 30% or more.

9. 发明专利

JPS62256791A DEVICE FOR GROWING SINGLE CRYSTAL 失效
公开(公告)号：JPS62256791A
公开(公告)日：1987-11-09
申请号：JP10055586
申请日：1986-04-30
申请人： TOSHIBA CERAMICS CO
发明人： TAKASU SHINICHIRO , TAJI HIDEKAZU , HONMA KAZUMOTO , YAMATO MITSUHIRO
IPC分类号： C30B15/22 , C30B15/00 , C30B15/36 , C30B29/06 , H01L21/18 , H01L21/208
摘要： PURPOSE:To obtain a single crystal having a stabilized structure by specifying the ratio of the diameter of the single crystal to the diameter of a crucible when the single crystal is pulled from the melt of an electrically conductive substance by the Czochralski method. CONSTITUTION:A quartz glass crucible 11 having a radius of (r) is fitted in a carbon crucible holding part 10, and the melt 12 is filled in the crucible. The radius of curvature of the bottom part of the crucible 11 is controlled to rb. Meanwhile, a grown silicon single crystal 13 having a diameter of D is hung from a lifting wire 14 so that the lower surface of the crystal is brought into contact with the surface of the melt 12. The crucible 11 is contained in a cylindrical electric heater 15 having a radius of rh, and the heater 15 is contained in a cylindrical heat insulating member 16 made of carbon. Besides, plate superconductive coils 17 having a radius of rc with low temp. retaining means 18 are opposed to each other on both sides of the insulating member 16 at an interval of L. The relation between D and (r) is preferably controlled to D/2r

10. 发明专利

JPS5617011A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS5617011A
公开(公告)日：1981-02-18
申请号：JP9257979
申请日：1979-07-23
申请人： TOKYO SHIBAURA ELECTRIC CO , TOSHIBA CERAMICS CO
发明人： WATANABE MASAHARU , HONMA KAZUMOTO
IPC分类号： H01L21/205 , C30B15/00 , C30B23/02 , C30B33/00 , C30B33/02 , H01L21/20 , H01L21/208 , H01L21/322
摘要： PURPOSE:To prevent defects in a laminated layer for a semiconductor device by using a substrate having defects of number larger than 10 /cm even after processing it for 18hr at 1,050 deg.C by heating an Si substrate containing a predetermined density of oxygen at 600-900 deg.C for predetermined time to produce defects of number larger than 10 /cm . CONSTITUTION:Defects 6 existed in the crystal of a substrate 1 (round bottom pits) have close relationship with defects formed in an epitaxial layer 4 of laminated layer for a semiconductor device. If the round bottom pits are higher in number than 10 /cm when heating the substrate at 1,050 deg.C for 18hr in an N2, ethcing it and observing it by an optical microscope, the defects in the epitaxial layer 4 of laminated layer fall within an allowable range. This high temperature process enlarges the miniature defects in the substrate to a size capable of observing them. The more the round bottom pits are increased, the less the defects in the epitaxial layer are decreased. Since the round bottom pit density is varied in accordance with the density of oxygen, when the substrate is heated at low temperature of 600- 900 deg.C, the round bottom pit density is increased without increasing the density of the oxygen in the substrate so as to prevent the defects in the epitaxial layer of the laminated layer.

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