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1. 发明专利

JPS59156992A Recharging device for semiconductor-crystal pulling-up machine 失效
标题翻译：用于半导体水晶拉丝机的充电装置
公开(公告)号：JPS59156992A
公开(公告)日：1984-09-06
申请号：JP2739683
申请日：1983-02-21
申请人： Toshiba Ceramics Co Ltd , Toshiba Mach Co Ltd
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , SUGIYAMA HISATAKA , TADA YOSHIAKI , OOISHI TOSHIO , KAWANABE ASAJI , HASEBE HITOSHI , MATSUDA MASATO
IPC分类号： C30B15/02 , H01L21/208
CPC分类号： C30B15/02
摘要： PURPOSE:To prevent contamination of impurities by scratches and generation of a bridge and to carry out surely the supply of starting materials by forming the inner surface of a cylindrical body through which semiconductor starting materials are charged to a crucible by opening the bottom plate, with a specified ceramic sintered body. CONSTITUTION:When a stopper 27 of a recharging device is abutted to a stopper receiver 33, and a suspender 23 is further lowered, the lowering of an outer cylinder 4 and a cylindrical body 1 is hindered by the stopper receiver 33. Since only a wire 19 is lowered, a bottom plate 17 is pressed and opened by the own-weight of lump semiconductor starting materials 28 contained thereon, and said materials 28 are charged into a crucible. At this time, when comparatively large amount of said materials 28 are contained in piles in the cylindrical body 1, a bridge A is apt to generate. Since the inner surface of the cylindrical body 1 in this recharging device is formed by a material such as a ceramic sintered body consisting mainly of Si3N4 or Si3N4 to which Y2O3, CeO3 or the like is added as a sintering assistant or a complex ceramic sintered body such as Si3N4 and Al2O3, the hardness at high temp. is high enough and the starting materials 28 fall surely without generation of the bridge A.
摘要翻译：目的：为了防止杂质受到划伤和产生桥梁的污染，并通过将半导体起始材料通过打开底板而将半导体起始材料装入坩埚的圆筒形体的内表面，确定地提供起始材料，规定的陶瓷烧结体。构成：当再充电装置的止动件27抵靠止动器接收器33并且悬挂器23进一步下降时，外筒4和圆筒体1的下降被止动器接收器33阻碍。由于只有线如图19所示，底板17被包含在其上的自身重量的半导体原料28按压并打开，并且将所述材料28装入坩埚中。此时，当在筒体1中堆积较多的所述材料28时，容易产生桥A. 由于该再充电装置中的圆筒体1的内表面由主要由添加有Y 2 O 3，CeO 3等的Si 3 N 4或Si 3 N 4构成的陶瓷烧结体，作为烧结助剂或复合陶瓷烧结体如Si3N4和Al2O3，高温下的硬度。足够高，起始材料28肯定下降而不产生桥A.

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