专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2014199917A 基板液処理方法、基板液処理装置および記憶媒体有权
标题翻译：基板液体处理方法，基板液体处理装置和储存介质
公开(公告)号：JP2014199917A
公开(公告)日：2014-10-23
申请号：JP2014008085
申请日：2014-01-20
申请人：東京エレクトロン株式会社 , Tokyo Electron Ltd
发明人： ORII TAKEHIKO , SHINDO NAOKI
IPC分类号： H01L21/304 , H01L21/306
CPC分类号： H01L21/02052 , H01L21/02057 , H01L21/67
摘要：【課題】処理液の供給量を低減しつつ、基板の表面全体を処理液で覆うこと。【解決手段】基板液処理方法は、基板(W)を水平姿勢で鉛直軸線周りに回転させながら、基板の表面の中心部に第1ノズル(30)から処理液を供給して、基板の直径よりも小さい直径の処理液の液膜を基板の表面に形成する工程と、第1ノズルにより基板の表面に形成された処理液の液膜の周縁部に、第1ノズルから供給されている処理液と同じ処理液を第2ノズル(33)から供給する工程と、その後、基板の表面への第2ノズルからの前記処理液の供給位置を基板の周縁部に向けて移動させ、これによって処理液の液膜を基板の周縁部に向けて広げてゆく工程と、を備えている。【選択図】図1
摘要翻译：要解决的问题：在减少处理液体的供给量的同时，用工艺液体覆盖基板的整个表面。溶液：基板液体处理方法包括以下步骤：通过第一喷嘴（30）供给处理液体，到基板（W）的表面的中心，同时沿垂直轴线水平姿势旋转基板，并且在基板的表面上形成处理液体的液膜，该液膜的直径小于底物; 将通过第一喷嘴供给的处理液体的处理液体通过第二喷嘴（33）供给到已经通过第一喷嘴（33）形成在基板的表面上的处理液体的液膜的周边部分喷嘴; 然后将通过第二喷嘴供给的处理液体的供给位置朝向基板的周边部分移动到基板的表面，从而将处理液体的液膜朝向基板的周边部分扩大。

2. 发明专利

JP2014140085A Substrate cleaning system, substrate cleaning method, and storage medium 有权
标题翻译：基板清洁系统，基板清洁方法和存储介质
公开(公告)号：JP2014140085A
公开(公告)日：2014-07-31
申请号：JP2014096437
申请日：2014-05-08
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KANEKO MIYAKO , ORII TAKEHIKO , SUGANO ITARU
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To remove particles adhered to a substrate while preventing pattern collapse and erosion into a base film.SOLUTION: A substrate cleaning system comprises: first processors; and second processors. Each first processor includes: a first holding section for holding a substrate; and first supplying sections for supplying processing liquids, including volatile components, to the substrate for forming a film on a whole principal surface of the substrate. Each second processor includes: a second holding section for holding the substrate; and a second supplying section. The second supplying section supplies, to the substrate, a removing liquid for dissolving the whole film which is formed by being solidified or cured on the substrate when the volatile components of the processing liquids supplied by the first supplying sections to the substrate are volatilized. The second supplying section also supplies, to the substrate, a rinse liquid for removing the dissolved film and the removing liquid left on the substrate.
摘要翻译：要解决的问题：去除附着在基板上的颗粒，同时防止图案塌陷和侵蚀到基膜中。解决方案：基板清洁系统包括：第一处理器; 和第二处理器。每个第一处理器包括：用于保持基板的第一保持部分; 以及第一供应部分，用于将包含挥发性成分的处理液体供应到在基板的整个主表面上形成膜的基板。每个第二处理器包括：用于保持基板的第二保持部分; 和第二供给部。第二供给部将由第一供给部供给到基板的处理液的挥发成分挥发时，向基板供给用于溶解通过在基板上固化或固化而形成的整个膜的除去液。第二供应部分还向基材提供用于除去溶解的膜和去除残留在基材上的液体的冲洗液。

3. 发明专利

JP2014107313A Substrate cleaning method and substrate cleaning system 有权
标题翻译：基板清洗方法和基板清洗系统
公开(公告)号：JP2014107313A
公开(公告)日：2014-06-09
申请号：JP2012257081
申请日：2012-11-26
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KANEKO MIYAKO , ORII TAKEHIKO , SUGANO ITARU
IPC分类号： H01L21/304
CPC分类号： H01L21/02052 , B08B3/04 , H01L21/02057 , H01L21/0206 , H01L21/0209 , H01L21/67046 , H01L21/67051 , H01L21/67115 , H01L21/6715 , H01L21/68728
摘要： PROBLEM TO BE SOLVED: To remove particles adhering to a substrate, while suppressing pattern collapse or erosion of a base film.SOLUTION: A substrate cleaning method includes a first supply step, the other surface processing step, and a second supply step. In the first supply step, a process liquid containing a volatile component and forming a film entirely on the principal surface of the substrate is supplied to the substrate. In the other surface processing step, the other surface is processed in a state where the principal surface of the substrate is covered entirely with a film solidified or hardened due to volatilization of a volatile component from the process liquid. In the second supply step, a removal liquid for dissolving the film entirely is supplied to the substrate after the other surface processing step.
摘要翻译：要解决的问题：除去附着在基板上的颗粒，同时抑制基膜的图案塌陷或侵蚀。溶液：基材清洗方法包括第一供给步骤，另一表面处理步骤和第二供给步骤。在第一供给步骤中，将含有挥发性成分并且在基材的主表面上整体形成膜的处理液供给到基板。在另一表面处理步骤中，另外的表面是在由于处理液体挥发性成分的挥发而使基板的主面完全被膜固化或固化的状态下进行处理的。在第二供给步骤中，在另一表面处理步骤之后，将完全溶解薄膜的去除液体供给到基板。

4. 发明专利

JP2013251379A Etching method, etching device and storage medium 有权
标题翻译：蚀刻方法，蚀刻装置和存储介质
公开(公告)号：JP2013251379A
公开(公告)日：2013-12-12
申请号：JP2012124564
申请日：2012-05-31
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KANEKO MIYAKO , ORII TAKEHIKO , WATANABE TSUKASA , EGASHIRA KEISUKE
IPC分类号： H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide an etching method which allows for selective etching of a silicon nitride film, when compared with the etching amount of a silicon oxide film.SOLUTION: A substrate where a silicon nitride film and a silicon oxide film are exposed to the surface is supplied with a silane coupling agent containing a silanol group (OH group) capable of hydrogen bonding to a silanol group (OH group) at the terminal of the exposed silicon oxide film. Subsequently, the hydrogen bonded silicon oxide film and the silane coupling agent are subjected to dehydration condensation and the surface of the silicon oxide film is covered with a protective material. Thereafter, the silicon nitride film is etched by supplying an etchant to the substrate W.
摘要翻译：要解决的问题：提供一种与氧化硅膜的蚀刻量相比可以选择性地蚀刻氮化硅膜的蚀刻方法。解决方案：将氮化硅膜和氧化硅膜暴露于在暴露的氧化硅膜的末端向表面供给含有能够与硅烷醇基（OH基）氢键合的硅烷醇基（OH基）的硅烷偶联剂。接着，将氢键合氧化硅膜和硅烷偶联剂进行脱水缩合，用保护材料覆盖氧化硅膜的表面。此后，通过向衬底W提供蚀刻剂来蚀刻氮化硅膜。

5. 发明专利

JP2012136783A Electrodeless plating device, electrodeless plating method, and computer-readable storage medium 有权
标题翻译：无电极镀层器件，无电极镀层法和计算机可读存储介质
公开(公告)号：JP2012136783A
公开(公告)日：2012-07-19
申请号：JP2012096998
申请日：2012-04-20
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HARA KENICHI , IWASHITA MITSUAKI , ORII TAKEHIKO , TOSHIMA TAKAYUKI
IPC分类号： C23C18/31
CPC分类号： H01L21/6723 , C23C18/1628 , C23C18/1676 , C23C18/168 , H01L21/6708 , H01L21/67109 , H01L21/67248
摘要： PROBLEM TO BE SOLVED: To provide an electrodeless plating device capable of forming a plated coating film of excellent film quality.SOLUTION: The electrodeless plating device includes a substrate support part 46 for supporting a substrate W, a plating liquid storage part for storing a plating liquid supplied to a surface of the substrate W, a plating liquid supply pipe for supplying the plating liquid from the plating liquid storage part, toward the surface of the substrate W supported by the substrate support part 46, a plating liquid delivery nozzle provided in the plating liquid supply pipe, and delivering the plating liquid onto the surface of the substrate W, a substrate temperature control member 48' provided in a reverse face side of the substrate W supported by the substrate support part 46, to control a temperature of the substrate W, and a moving mechanism for generating relative elevation movement between the substrate temperature control member 48' and the substrate W. The substrate temperature control member 48' controls the temperature of the substrate W, by regulating a distance with respect to the substrate W by the moving mechanism.
摘要翻译：要解决的问题：提供能够形成具有优异的膜质量的镀覆膜的无电极电镀装置。解决方案：无电极电镀装置包括用于支撑基板W的基板支撑部分46，用于存储供应到基板W的表面的电镀液的电镀液体存储部分，用于提供电镀液体的电镀液供给管从电镀液储存部分朝向由基板支撑部分46支撑的基板W的表面，设置在电镀液供应管中的镀液输送喷嘴，并将电镀液输送到基板W的表面上，温度控制部件48'，设置在由基板支撑部46支撑的基板W的背面侧，以控制基板W的温度;以及移动机构，用于在基板温度控制部件48'和衬底W.衬底温度控制构件48'通过调节相对于第th的距离来控制衬底W的温度 e基板W。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2012124529A Substrate processing apparatus, substrate processing method, and recording medium 审中-公开
标题翻译：基板处理装置，基板处理方法和记录介质
公开(公告)号：JP2012124529A
公开(公告)日：2012-06-28
申请号：JP2012054102
申请日：2012-03-12
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MURAKI YUSUKE , TOZAWA SHIGEKI , ORII TAKEHIKO
IPC分类号： H01L21/302 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method with which even when a wafer is processed in a low-pressure state, a temperature of the wafer can be efficiently adjusted while preventing attachment of particles to the wafer and an occurrence of damage to the wafer; and also provide a recording medium used for the substrate processing apparatus and the substrate processing method.SOLUTION: A substrate W is loaded into a processing chamber 32, and a lower surface of the substrate W is brought into contact with a contact member 42 disposed on an upper surface of a mounting table 40. The substrate W is mounted on the mounting table 40 with a gap G formed between the substrate W and the mounting table 40. Then, a temperature of the substrate W supported by the contact member 42 is adjusted by adjusting a temperature of the mounting table 40 in a state in which the processing chamber 32 is set to a predetermined pressure. Thereafter, the substrate W is subjected to a predetermined processing by setting the processing chamber 32 to a processing atmosphere whose pressure is lower than the predetermined pressure.
摘要翻译：要解决的问题：为了提供即使在低压状态下加工晶片的基板处理装置和基板处理方法，也可以有效地调整晶片的温度，同时防止颗粒附着到晶片和对晶片的损坏的发生; 并且还提供用于基板处理装置和基板处理方法的记录介质。解决方案：将衬底W装载到处理室32中，并且将衬底W的下表面与设置在安装台40的上表面上的接触构件42接触。衬底W安装在安装台40具有形成在基板W和安装台40之间的间隙G.然后，通过在安装台40的温度下调节安装台40的温度来调节由接触构件42支撑的基板W的温度处理室32被设定为预定压力。此后，通过将处理室32设定为压力低于预定压力的处理气氛，对衬底W进行预定处理。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2009218563A Substrate processing apparatus, substrate processing method, and storage medium 有权
标题翻译：基板处理装置，基板处理方法和存储介质
公开(公告)号：JP2009218563A
公开(公告)日：2009-09-24
申请号：JP2008315721
申请日：2008-12-11
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ORII TAKEHIKO , SEKIGUCHI KENJI
IPC分类号： H01L21/304 , F26B5/08 , F26B21/14
CPC分类号： H01L21/02052 , H01L21/67028 , H01L21/67034
摘要： PROBLEM TO BE SOLVED: To provide a wafer processing apparatus capable of reducing a supply amount of low humidity gas.
SOLUTION: The substrate processing apparatus includes: a chamber 1 for housing a wafer W; a spin chuck 2 for holding the wafer W within the chamber 1; a gas discharging head 7 provided vertically movably above the spin chuck 2 in the chamber 1 and capable of discharging either a low humidity gas or a clean air downward; a driving mechanism 67 for moving the gas discharging head 7 at least between a retreat position at an upper part of the chamber and an approach position near the substrate held by the substrate holding part; a processing liquid supply nozzle 15 for supplying a processing liquid to the wafer W held by the spin chuck 2; and an IPA supply nozzle 35 for supplying an IPA to the wafer W held by the spin chuck 2. The gas discharging head 7 is positioned at the approach position to supply the low humidity gas from the gas discharging head at least when the IPA is supplied.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够减少低湿气体的供给量的晶片处理装置。解决方案：基板处理装置包括：用于容纳晶片W的室1; 用于将晶片W保持在腔室1内的旋转卡盘2; 气室排出头7，其可设置在室1内的旋转卡盘2的上方可上下移动，能够向下排放低湿气体或清洁空气; 驱动机构67，其用于使排气头7至少在室的上部的退避位置和由基板保持部保持的基板附近的接近位置之间移动; 用于将处理液供给到由旋转卡盘2保持的晶片W的处理液供给喷嘴15; 以及用于向由旋转卡盘2保持的晶片W提供IPA的IPA供给喷嘴35.至少在提供IPA时，排气头7位于接近位置以从气体排出头供应低湿度气体。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008034872A Cleaning processing method and apparatus 有权
标题翻译：清洁加工方法和装置
公开(公告)号：JP2008034872A
公开(公告)日：2008-02-14
申请号：JP2007260618
申请日：2007-10-04
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ORII TAKEHIKO , NAKAMORI MITSUNORI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide cleaning processing method and apparatus capable of suppressing the amount of consumption of a chemical agent by efficiently supplying the chemical agent to a surface of a substrate, and a cleaning processing method capable of reducing cleaning marks (watermarks) generated in the surface of the substrate.
SOLUTION: In the cleaning processing of a semiconductor wafer W held in a process chamber consisting of an outside chamber and an inside chamber, a dying processing using the chemical agent (IPA) has: a step of making the chemical agent into a vapor and supplying the chemical agent in the form of a vapor to the substrate by supplying a high-temperature gas to a chemical agent supply pipe 77 after collecting the chemical agent in the chemical agent supply pipe 77 which supplies the chemical agent to a nozzle which ejects the chemical agent in the state that the semiconductor wafer W is stopped or rotated at a low speed; and a step of centrifugally removing the chemical agent attached to the substrate by rotating the substrate at a rotating speed higher than the low speed after the supply of the chemical agent is stopped.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够通过有效地将化学试剂供给到基板的表面来抑制化学试剂的消耗量的清洁处理方法和装置以及能够减少清洁标记的清洁处理方法（水印）在基板的表面中产生。解决方案：在保持在由外部室和内部室组成的处理室中的半导体晶片W的清洁处理中，使用化学试剂（IPA）的染色处理具有以下步骤：使化学试剂成为通过在将化学试剂供给管77收集化学试剂后，向化学试剂供给管77供给高温气体，向化学试剂供给管77供给高温气体，从而将化学试剂以蒸气的形式供给到基板，喷嘴在半导体晶片W停止或低速旋转的状态下喷射化学试剂; 以及在停止供给化学试剂之后，以高于低速的转速旋转基板的方式，离心除去附着于基板的化学试剂的工序。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2007123836A Substrate processing method and computer readable storage medium 有权
标题翻译：基板处理方法和计算机可读存储介质
公开(公告)号：JP2007123836A
公开(公告)日：2007-05-17
申请号：JP2006230831
申请日：2006-08-28
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FUJII YASUSHI , TOSHIMA TAKAYUKI , ORII TAKEHIKO
IPC分类号： H01L21/768 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method with less damage such as a pattern peel-off when performing a processing of removing a residual substance such as a sacrifice film after etching a film to be etched, by solubilizing this residual substance in a prescribed liquid and subsequently removing the residual substance by this prescribed liquid.
SOLUTION: The substrate processing method comprises steps of forming a prescribed pattern by etching a film to be etched formed on a substrate; denaturing a substance remained after ending etching processing so as to be soluble in a prescribed liquid; subsequently silylating a surface of the film to be etched on which a pattern is formed; and thereafter dissolving and removing the substance denatured by supplying the prescribed liquid.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供在蚀刻被蚀刻的膜之后进行除去牺牲膜等残留物质的处理时，具有较少损伤的基板处理方法，例如图案剥离，通过溶解该残留物物质在规定的液体中，然后通过该处方液体除去残留物质。解决方案：基板处理方法包括以下步骤：通过蚀刻在基板上形成的待蚀刻的膜来形成规定的图案; 在终止蚀刻处理后残留的物质变性以溶于规定的液体; 随后使待蚀刻的膜的表面甲硅烷化，在其上形成图案的膜的表面; 然后通过供应规定的液体来溶解和除去变性的物质。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2005085894A Device and method for substrate treatment 有权
标题翻译：用于基板处理的装置和方法
公开(公告)号：JP2005085894A
公开(公告)日：2005-03-31
申请号：JP2003314551
申请日：2003-09-05
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NANBA HIROMITSU , ORII TAKEHIKO
IPC分类号： H01L21/306 , H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment device and a substrate treatment method which are capable of nicely forming a film of a treatment liquid on the surface of a wafer while preventing the contamination and damage of the wafer.
SOLUTION: The substrate treatment device 1 for treating a substrate by forming the film of the treatment liquid on the surface of the substrate W is provided with a chuck 2 for retaining the substrate W in substantially horizontally, a supplying nozzle 3 for supplying the treatment liquid onto the surface of the substrate W retained by the chuck 2, and a frame member 5 arranged along the peripheral rim of the surface of the substrate W at a height upward apart from the surface of the substrate W retained by the chuck 2 and contacted with the film of the treatment liquid formed on the surface of the substrate W.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够在防止晶片的污染和损坏的同时在晶片表面上很好地形成处理液的膜的基板处理装置和基板处理方法。解决方案：通过在基板W的表面上形成处理液的膜来处理基板的基板处理装置1设置有用于将基板W大致水平地保持的卡盘2，供给用的供给喷嘴3 处理液体到由卡盘2保持的基板W的表面上;以及框架构件5，其沿着基板W的表面的周边边缘布置在与由卡盘2保持的基板W的表面上方的高度并与形成在基板W的表面上的处理液的膜接触。版权所有（C）2005，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式