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    • 3. 发明专利
    • Sintered body and cutting tool obtained by using the sintered body
    • 使用烧结体获得的烧结体和切割工具
    • JP2014144911A
    • 2014-08-14
    • JP2014043889
    • 2014-03-06
    • Sumitomo Electric Ind Ltd住友電気工業株式会社
    • MATSUKAWA RINKOWATAYA KENICHIYOSHIDA KATSUTOMURAKAMI DAISUKE
    • C04B35/583B22F7/00B23B27/14B23B27/20C04B35/599C22C1/05
    • PROBLEM TO BE SOLVED: To provide a sintered body which maintains high strength and hardness and furthermore has small reactivity with a workpiece, and to provide a cutting tool excellent in wear resistance.SOLUTION: There is provided the sintered body containing cubic crystal boron nitride, at least one of cubic crystal sialon and cubic crystal silicon nitride, and a first compound. The content of the cubic crystal boron nitride is 35 vol.% to 93 vol.%, an average particle diameter of the cubic crystal boron nitride is 0.5 μm to 5 μm, the total content of the cubic crystal sialon and the cubic crystal silicon nitride is 2 vol.% to 65 vol.%, the first compound is one or more kind of compound consisting of at least one kind of element selected from a group consisting of group 4 elements, group 5 elements, group 6 elements and aluminum, and at least one kind of element selected from a group consisting of nitrogen, boron and carbon, and the total content of the first compound in the sintered body is 10 vol.% to 60 vol.%.
    • 要解决的问题:提供一种保持高强度和硬度并且与工件的反应性小的烧结体,并提供耐磨性优异的切削工具。提供了一种含有立方晶氮化硼的烧结体, 至少一种立方晶体赛隆和立方晶氮化硅,以及第一种化合物。 立方晶氮化硼的含量为35体积%至93体积%,立方晶氮化硼的平均粒径为0.5μm〜5μm,立方晶体赛隆和立方晶氮化硅的总含量 为2体积%至65体积%,第一化合物为选自由第4族元素,第5族元素,第6族元素和铝组成的组中的至少一种元素组成的一种或多种化合物,以及 选自氮,硼和碳中的至少一种元素,烧结体中第一化合物的总含量为10体积%至60体积%。
    • 6. 发明专利
    • Diamond electrode and production method therefor
    • 钻石电极及其生产方法
    • JP2005325417A
    • 2005-11-24
    • JP2004144963
    • 2004-05-14
    • Sumitomo Electric Ind Ltd住友電気工業株式会社
    • YOSHIDA KATSUTO
    • G01N27/30B01J3/06C04B35/52C25B11/12
    • PROBLEM TO BE SOLVED: To inexpensively provide a diamond electrode having high reliability and suitable for an electrode for electrolyzing substance in an aqueous solution. SOLUTION: A diamond polycrystal body composed of electrically conductive diamond particles 1 and an insulating protective phase 2 composed of any one kind selected from among silicon carbide, silicon oxide, silicon nitride, aluminum oxide, aluminum nitride and resin is joined to at least one face of an electrically conductive substrate 4 with an electrically conductive brazing filler metal 3, so that a diamond electrode can be obtained. The thickness of the diamond polycrystal body is controlled to the average particle diameter in the particle size distribution of the raw material diamond particles or smaller, and it is preferable that the area of 50 to 95% of the surface of the diamond polycrystal body is occupied by the surface of electrically conductive diamond. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了廉价地提供具有高可靠性并适用于在水溶液中电解物质的电极的金刚石电极。 解决方案:由导电金刚石颗粒1和由选自碳化硅,氧化硅,氮化硅,氧化铝,氮化铝和树脂中的任何一种构成的绝缘保护相2的金刚石多晶体体接合到 具有导电性钎料3的导电性基板4的至少一面,能够得到金刚石电极。 将金刚石多晶体的厚度控制在原料金刚石颗粒的粒度分布的平均粒径以下,优选金刚石多晶体的表面的50〜95%的面积被占据 通过导电金刚石的表面。 版权所有(C)2006,JPO&NCIPI
    • 7. 发明专利
    • Subcarrier for mounting semiconductor laser and light- emitting element using the same
    • 用于安装半导体激光器和发光元件的SUBCARERER
    • JP2003309316A
    • 2003-10-31
    • JP2002112958
    • 2002-04-16
    • Sumitomo Electric Ind Ltd住友電気工業株式会社
    • MORIGAMI HIDEAKIYOSHIDA KATSUTOAWAJI TAKAHIRONAKAI TETSUOOKUNO TSUGUTOSHIMIKI ATSUSHI
    • H01S5/024
    • PROBLEM TO BE SOLVED: To solve the problem of a conventional heat sink material being difficult to allow both high heat conductivities and matching of thermal expansions, between elements to be mounted to be obtained during advancements of an increase in size of and a rise in an output of a semiconductor element, and this is caused by the low thermal expansion coefficient of a substance having high thermal conductivities.
      SOLUTION: A high heat conductivities sintering material for a heat sink, having necessary heat conductivities and thermal expansion coefficient is provided, by forming a composite of a diamond having the highest thermal conductivities from substances and a copper having a large thermal expansion coefficient, and regulating the particle size and the content of the diamond. A method for sintering uses an ultra-high pressure and high temperature sintering method, in order to provide a tissue not substantially containing pores. A subcarrier for mounting a laser semiconductor element is provided, by using a high thermal conductivities sintering material for the heat sink.
      COPYRIGHT: (C)2004,JPO
    • 解决的问题为了解决传统的散热材料难以允许高导热性和热膨胀匹配的问题,在要增加的尺寸和 半导体元件的输出上升,这是由导热性高的物质的低热膨胀系数引起的。 解决方案:通过形成热物质导热系数最高的金刚石和具有大的热膨胀系数的铜的复合材料,提供了具有必要的热导率和热膨胀系数的用于散热器的高导热性烧结材料 ,并调节钻石的粒度和含量。 烧结方法采用超高压和高温烧结方法,以提供基本不含孔的组织。 通过使用用于散热器的高导热性烧结材料,提供了用于安装激光半导体元件的副载波。 版权所有(C)2004,JPO
    • 9. 发明专利
    • 光学部品
    • 光学元件
    • JP2015004744A
    • 2015-01-08
    • JP2013128798
    • 2013-06-19
    • 住友電気工業株式会社Sumitomo Electric Ind Ltd
    • KAMEDA SHINJIYOSHIDA KATSUTOKURISU KENICHI
    • G02B3/00G02B1/02G02B13/14
    • 【課題】レーザー加工機や赤外線カメラ等の用途で使用される光学部品に関し、前記光学部品を構成する素材の合成時に局所的な歪が発生したとしても、レンズとして使用できる方策を提供する。【解決手段】光軸に垂直な方向の断面が円形の光学部品において、前記光軸方向から見て、前記光軸から前記光学部品の最外周までの距離をRとしたときに、前記光軸から0.5Rの距離に位置する任意の4カ所の残留応力の平均値&sgr;avが1MPa以上であり、かつ前記4カ所の残留応力が、|&sgr;max−&sgr;av|/&sgr;av≦̸1.3(ここで、&sgr;maxは前記4カ所の残留応力の内、偏差の絶対値が最も大きい残留応力である。)の関係を満たすようにする。【選択図】図1
    • 要解决的问题:提供一种用于激光加工机和红外线照相机等应用的光学部件,即使在合成构成光学部件的材料时产生局部应力,也可以将其用作透镜。 解决方案:提供在垂直于光轴的方向上具有圆形横截面的光学部件。 从光轴方向看,当R表示从光轴到光学部件的最外圆周的距离时,距离光轴0.5R的距离处的任何四个位置处的残余应力的平均值&sgr 为1MPa以上,四个位置处的残余应力满足|&sgr; - &sgr; | /&sgr;≤1.3(其中&sgr;表示残余应力绝对值偏差最大的残余应力 在四个地方)。