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1. 发明专利

JP2014055095A ZnSe POLYCRYSTAL AND METHOD OF PRODUCING THE SAME 有权
标题翻译： ZnSe多晶及其制造方法
公开(公告)号：JP2014055095A
公开(公告)日：2014-03-27
申请号：JP2012202542
申请日：2012-09-14
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , Sumitomo Electric Hardmetal Corp , 住友電工ハードメタル株式会社
发明人： YOSHIDA KATSUTO , KURISU KENICHI , KYOTANI TATSUYA
IPC分类号： C01B19/04 , C23C16/30 , C23C16/56
摘要： PROBLEM TO BE SOLVED: To provide a ZnSe polycrystal that is high in transmittance of light in the wavelength region of 500-560 nm for the purpose of using a green laser in the optical axis adjustment of an optical system of a carbon dioxide laser, and a method of producing the same.SOLUTION: The oxygen content of a ZnSe polycrystal is reduced to a predetermined value or less, which makes it possible to increase the transmittance of light in the wavelength region of 500-560 nm and use a green laser in the optical axis adjustment of an optical system of a carbon dioxide laser.
摘要翻译：要解决的问题：为了在二氧化碳激光器的光学系统的光轴调整中使用绿色激光的目的，提供在500-560nm的波长区域中的透光率高的ZnSe多晶体，以及其制造方法。解决方案：ZnSe多晶体的氧含量降低到预定值以下，这使得可以增加在500-560nm的波长区域中的光的透射率，并且使用绿色激光二氧化碳激光器的光学系统的光轴调整。

2. 发明专利

JP2013173637A ZnSe SINTERED BODY AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： ZnSe烧结体及其制造方法
公开(公告)号：JP2013173637A
公开(公告)日：2013-09-05
申请号：JP2012038388
申请日：2012-02-24
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , Sumitomo Electric Hardmetal Corp , 住友電工ハードメタル株式会社
发明人： YOSHIDA KATSUTO , KURISU KENICHI , KYOTANI TATSUYA
IPC分类号： C04B35/00 , C01B19/04
摘要： PROBLEM TO BE SOLVED: To provide a ZnSe sintered body excellent in cutting property in order to reduce a cost of mechanical machining.SOLUTION: A cutting property can be enhanced by making a ZnSe sintered body include carbon and a cost when mechanically machining the sintered body to an infrared transmitting window or an infrared lens can be reduced.
摘要翻译：要解决的问题：提供一种切削性能优异的ZnSe烧结体，以降低机械加工成本。解决方案：通过使ZnSe烧结体包括碳并且在机械加工烧结体时成本增加，可以提高切削性能可以减少红外线透射窗口或红外线透镜。

3. 发明专利

JP2003328160A ZnSe DIFFRACTIVE OPTICAL PART AND ITS PRODUCTION METHOD 审中-公开
标题翻译： ZnSe衍射光学部件及其生产方法
公开(公告)号：JP2003328160A
公开(公告)日：2003-11-19
申请号：JP2002131442
申请日：2002-05-07
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： KURISU KENICHI , OKADA TAKESHI
IPC分类号： C23F4/00 , G02B5/18
CPC分类号： H01J37/32082 , G02B5/1857 , H01L21/465
摘要： PROBLEM TO BE SOLVED: To provide a production method of a ZnSe diffractive optical part which is improved to enhance the efficiency of diffraction.
SOLUTION: Plasma is generated by induction field which is generated by a coil. The surface of a ZnSe substrate is etched by the plasma. According to the method, such a pattern that an internal angle formed between the sidewall of the pattern and the surface of the ZnSe substrate is ≥75° is obtained. The ZnSe diffractive optical parts have the enhanced efficiency of diffraction and has the excellent performance.
COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：提供改善以提高衍射效率的ZnSe衍射光学部件的制造方法。解决方案：由线圈产生的感应场产生等离子体。 ZnSe衬底的表面被等离子体蚀刻。根据该方法，得到形成在图案的侧壁与ZnSe基板的表面之间的内角为≥75°的图案。 ZnSe衍射光学部件具有提高的衍射效率并且具有优异的性能。版权所有（C）2004，JPO

4. 发明专利

JP2014138105A Conductive oxide and manufacturing method of the same 审中-公开
标题翻译：导电氧化物及其制造方法
公开(公告)号：JP2014138105A
公开(公告)日：2014-07-28
申请号：JP2013006348
申请日：2013-01-17
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： AWATA HIDEAKI , MIYANAGA YOSHINORI , SOGABE KOICHI , KURISU KENICHI
IPC分类号： H01L21/28 , C01G15/00 , C23C14/34 , H01L21/285 , H01L21/336 , H01L21/363 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a conductive oxide and a manufacturing method of the same, which can form an oxide semiconductor film having a lesser content of rare metal, in which decrease in carrier mobility is inhibited.SOLUTION: A conductive oxide is composed of a complex oxide of indium, aluminum and zinc. In the conductive oxide, an atomic concentration ratio of aluminum to zinc is not less than 4 and not more than 5. Further in the conductive oxide, an atomic concentration ratio of indium to zinc is not less than 1.8 and not more than 2.2.
摘要翻译：要解决的问题：为了提供能够形成少量稀有金属的氧化物半导体膜的导电氧化物及其制造方法，其中载流子迁移率的降低被抑制。解决方案：导电氧化物由铟，铝和锌的复合氧化物。在导电性氧化物中，铝与锌的原子浓度比为4以上且5以下。此外，在导电性氧化物中，铟与锌的原子浓度比为1.8以上且2.2以下。

5. 发明专利

JP2009192783A Method of manufacturing optical component for laser machining 审中-公开
标题翻译：制造激光加工的光学元件的方法
公开(公告)号：JP2009192783A
公开(公告)日：2009-08-27
申请号：JP2008032886
申请日：2008-02-14
申请人： Sumitomo Electric Hardmetal Corp , Sumitomo Electric Ind Ltd , Univ Kansai , 住友電工ハードメタル株式会社 , 住友電気工業株式会社 , 学校法人関西大学
发明人： KURISU KENICHI , NAKAHARA SUMIO
IPC分类号： G02B3/00 , B23K26/00 , G03F7/40
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an optical component for laser machining that reduces surface roughness and light scattering. SOLUTION: The method of manufacturing an optical component for laser machining includes: (a) a process for forming a photoresist film on the surface of a base; (b) a process for forming an unexposed portion having a desired three-dimensional shape by exposing the photoresist film to a laser beam; (c) a process for developing the photoresist film and removing the unexposed portion using a laser beam; (d) a process for heat treating the photoresist film at a temperature at which the photoresist film can be softened; and (e) a process for transferring the three-dimensional shape of the unexposed portion to the base by etching, and forming the three-dimensional shape on the surface of the base. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造用于激光加工的光学部件的方法，其减少表面粗糙度和光散射。解决方案：激光加工用光学部件的制造方法包括：（a）在基材的表面形成光致抗蚀剂膜的工序; （b）通过将光致抗蚀剂膜暴露于激光束来形成具有期望的三维形状的未曝光部分的工艺; （c）使用激光束显影光致抗蚀剂膜并去除未曝光部分的工艺; （d）在光致抗蚀剂膜可以软化的温度下对光致抗蚀剂膜进行热处理的方法; 以及（e）通过蚀刻将未曝光部分的三维形状转印到基底上的工艺，并在基底的表面上形成三维形状。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2007310173A Dry etching method and diffractive optical element 审中-公开
$Dry etching method and diffractive optical element$
标题翻译：干蚀刻方法和衍射光学元件
公开(公告)号：JP2007310173A
公开(公告)日：2007-11-29
申请号：JP2006139448
申请日：2006-05-18
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： KURISU KENICHI
IPC分类号： G02B5/18
摘要： PROBLEM TO BE SOLVED: To provide a dry etching method by which a uniform etching plane can be obtained and to provide a diffractive optical element to be manufactured by using the dry etching method. SOLUTION: A dry etching apparatus 1 is used. An insulating substrate 8 is brought into electric contact with an electrode 6. Dry etching is performed on the resulting insulating substrate in plasma 9 in such a state that a dielectric 11 is interposed between the insulating substrate 8 and the electrode 6. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以获得均匀蚀刻平面的干蚀刻方法，并提供通过使用干蚀刻方法制造的衍射光学元件。解决方案：使用干蚀刻装置1。绝缘基板8与电极6电接触。在绝缘基板8和电极6之间插入电介质11的状态下，对得到的等离子体9的绝缘基板进行干法蚀刻。（C）2008，JPO＆INPIT

7. 发明专利

JP2014152369A Conductive oxide and semiconductor oxide film 审中-公开
标题翻译：导电氧化物和半导体氧化物膜
公开(公告)号：JP2014152369A
公开(公告)日：2014-08-25
申请号：JP2013024527
申请日：2013-02-12
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： MIYANAGA YOSHINORI , AWATA HIDEAKI , KURISU KENICHI
IPC分类号： C23C14/34 , C04B35/00 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a conductive oxide that may form a semiconductor oxide film containing less rare metal and having a uniform composition and the semiconductor oxide film formed using the conductive oxide.SOLUTION: The conductive oxide is a conductive oxide having a crystal phase of a basic structure of a crystal structure similar to that of InAlZnO. The conductive oxide consists of a complex oxide of indium, aluminum and bivalent metal. The atomic concentration ratio of aluminum to indium in the crystal phase is 0.8 or more and less than 1. The atomic concentration ratio of the bivalent metal to indium in the crystal phase is 0.8 or more and less than 1.
摘要翻译：要解决的问题：提供可以形成含有少量金属并且具有均匀组成的半导体氧化物膜的导电氧化物和使用导电氧化物形成的半导体氧化物膜。溶液：导电氧化物是具有结晶相的导电氧化物具有类似于InAlZnO的晶体结构的基本结构。导电氧化物由铟，铝和二价金属的复合氧化物组成。结晶相中的铝与铟的原子浓度比为0.8以上且小于1.结晶相中的二价金属与铟的原子浓度比为0.8以上且小于1。

8. 发明专利

JP2011154163A Pattern forming method and diffractive optical component 审中-公开
$Pattern forming method and diffractive optical component$
标题翻译：图形形成方法和衍射光学元件
公开(公告)号：JP2011154163A
公开(公告)日：2011-08-11
申请号：JP2010015191
申请日：2010-01-27
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： KURISU KENICHI
IPC分类号： G02B5/18 , B05D5/06 , B05D7/00
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method by which a desired optical characteristic can be secured, and to provide a diffractive optical component. SOLUTION: The diffractive optical component 1 has a pattern 10 composed of a rugged structure on the surface of a substrate 11. In forming the pattern 10, a shielding film 12 for shielding light is formed on the surface of the substrate 11, a resist is applied onto the shielding film 12 to form a photoresist layer 13. Then, a plane pattern corresponding to the pattern 10 is exposed/transferred on the photoresist layer 13 using light and developed, the remaining photoresist layer 13 is used as a mask to form the pattern 10 on the surface of the substrate 11 by etching. As a result, desired optical characteristics can be secured in the diffractive optical component 1. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供可以确保期望的光学特性的图案形成方法，并提供衍射光学部件。解决方案：衍射光学部件1具有在基板11的表面上由凹凸结构构成的图案10.在形成图案10时，在基板11的表面上形成用于屏蔽光的屏蔽膜12，将抗蚀剂施加到屏蔽膜12上以形成光致抗蚀剂层13.然后，使用光将对应于图案10的平面图案曝光/转印到光致抗蚀剂层13上并显影，将剩余的光致抗蚀剂层13用作掩模通过蚀刻在基板11的表面上形成图案10。因此，可以在衍射光学部件1中确保期望的光学特性。版权所有：（C）2011，JPO＆INPIT

9. 发明专利

JP2010164890A Method for manufacturing diffraction type optical component 有权
$Method for manufacturing diffraction type optical component$
标题翻译：制造衍射型光学元件的方法
公开(公告)号：JP2010164890A
公开(公告)日：2010-07-29
申请号：JP2009008848
申请日：2009-01-19
申请人： Sumitomo Electric Hardmetal Corp , Sumitomo Electric Ind Ltd , 住友電工ハードメタル株式会社 , 住友電気工業株式会社
发明人： KURISU KENICHI , IMAMURA HIDEAKI
IPC分类号： G02B5/18
CPC分类号： G02B5/1857
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a diffraction type optical component suppressing heat generation from the inside of a substrate and stabilizing etching rate.
SOLUTION: The method for manufacturing the diffraction type optical component constituted by the insulating substrate having recessed and projecting parts on a surface includes a selection process for measuring electric resistivity of the insulating substrate and selecting the insulating substrate having the electric resistivity of the predetermined value or more and an etching process for forming the recessed and projecting parts on the surface of the insulating substrate selected in the selection process by dry etching process.
COPYRIGHT: (C)2010,JPO&INPIT

10. 发明专利

JP2005157344A Dry etching method and diffraction type optical component 有权
$Dry etching method and diffraction type optical component$
标题翻译：干蚀刻方法和衍射型光学元件
公开(公告)号：JP2005157344A
公开(公告)日：2005-06-16
申请号：JP2004321000
申请日：2004-11-04
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： KURISU KENICHI
IPC分类号： G02B5/18 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a dry etching method whose etching rate is made stable and a diffraction type optical component manufactured by using the dry etching method.
SOLUTION: Disclosed is the dry etching method in which dry etching is carried out while a conductor 6 on which an insulating substrate 4 is stuck is brought into electric contact with an electrode 7. The drying method is characterized in that the insulating substrate 4 and conductor 6 are stuck by using conductive grease 50. Further, disclosed is the diffraction optical component which is manufactured by using the dry etching method.
COPYRIGHT: (C)2005,JPO&NCIPI

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