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1. 发明专利

JP2009057247A Method for growing group iii nitride crystal, and group iii nitride crystal substrate 审中-公开
标题翻译：用于生长III族氮化物晶体和III族氮化物晶体基板的方法
公开(公告)号：JP2009057247A
公开(公告)日：2009-03-19
申请号：JP2007226025
申请日：2007-08-31
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： YOSHIDA HIROAKI , FUJIWARA SHINSUKE , HIROTA TATSU , UEMATSU KOJI , TANAKA HARUKO
IPC分类号： C30B29/38 , C30B19/12
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal which has a nonpolar surface as its principal surface, and has a low dislocation density; and the group III nitride crystal substrate.
SOLUTION: The method for growing a group III nitride crystal comprises a step of preparing a ground substrate 10 which includes a group III nitride seed crystal 10a at least at the principal surface 10m side and of which the principal surface 10m has an inclination angle of ≥0.5° to ≤10° with respect to the {1-100} surface 10c of the group III nitride crystal layer 10a and a step of growing a group III nitride crystal 20 on the principal surface 10 m of the ground substrate 10. When the group III nitride crystal 20 is grown, at least one portion of the dislocation remaining in the group III nitride crystal 20 is propagated in a direction substantially parallel to the {1-100} surface 10c and discharged to the outer peripheral part of the group III nitride crystal 20.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种生长具有非极性表面作为其主表面并具有低位错密度的III族氮化物晶体的方法; 和III族氮化物晶体衬底。解决方案：用于生长III族氮化物晶体的方法包括制备接地衬底10的步骤，该衬底10至少在主表面10m侧包括III族氮化物晶种10a，其主表面10m具有倾斜相对于III族氮化物晶体层10a的ä1-100}面10c为≥0.5°〜≤10°的角度，以及在接地基板10的主面10m上生长III族氮化物晶体20的工序。当III族氮化物晶体20生长时，残留在III族氮化物晶体20中的位错的至少一部分在基本上平行于ä1-100}表面10c的方向上传播并且被排放到组的外周部分 III型氮化物晶体20.版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2009023862A Group iii nitride crystal and method for growing the same 有权
标题翻译：第III组氮化物晶体及其生长方法
公开(公告)号：JP2009023862A
公开(公告)日：2009-02-05
申请号：JP2007187081
申请日：2007-07-18
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , HIROTA TATSU , UEMATSU KOJI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal by which a large crystal can be grown in a liquid phase method.
SOLUTION: The method for growing a group III nitride crystal aims to grow a group III nitride crystal 10 by a liquid phase method. The method includes the steps of: preparing a substrate 1 that has a flat principal plane 1m, contains a group III nitride seed crystal 1a in at least the principal plane 1m side, the seed crystal having the same chemical composition as that of the group III nitride crystal 10, and has a radius of curvature of not less than 2 m as a warpage of a (hkil)-plane 1n nearest to the principal plane 1m, wherein i=-(h+k) and each of h, k and l is an integer from -9 to 9; and bringing a solution prepared by dissolving a nitrogen-containing gas 5 in a solvent 3 containing a group III metal and an alkali metal into contact with the principal plane 1m of the substrate 1 to grow the group III nitride crystal 10 on the principal plane 1m.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种用于生长可以以液相法生长大晶体的III族氮化物晶体的方法。解决方案：用于生长III族氮化物晶体的方法旨在通过液相法生长III族氮化物晶体10。该方法包括以下步骤：制备具有平坦主平面1m的基板1，至少在主平面1m侧包含III族氮化物晶种1a，晶种具有与III组相同的化学组成氮化物晶体10，并且具有不小于2μm的曲率半径作为最接近主平面1m的（hkil）面1n的翘曲，其中i = - （h + k）以及h，k和 l为-9〜9的整数; 并将通过将含氮气体5溶解在含有III族金属和碱金属的溶剂3中制备的溶液与基板1的主平面1m接触，以在主平面1m上生长III族氮化物晶体10 。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2010100449A Method for growing group iii nitride crystal 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2010100449A
公开(公告)日：2010-05-06
申请号：JP2008271136
申请日：2008-10-21
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： MORISHITA MASANORI , UEMATSU KOJI , TANAKA HARUKO , YOSHIDA HIROAKI , FUJIWARA SHINSUKE , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, by which a group III nitride crystal having low dislocation density is grown with satisfactory reproducibility even if the crystal growth speed is decreased.
SOLUTION: The method for growing a group III nitride crystal 10 is based on a liquid phase method, and includes a process for preparing a ground substrate 1 and a process for growing the group III nitride crystal 10 on the main surface 1m of the ground substrate by bringing a solution 6, obtained by dissolving a nitrogen-containing gas 5 into a solvent 3 containing a group III metal and an alkali metal, into contact with the main surface 1m. In the process for growing the group III nitride crystal 10, the crystal growth speed is gradually increased from 0 μm/hr at a speed change rate of ≤1 μm/hr
2 .
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种生长III族氮化物晶体的方法，即使晶体生长速度降低，通过该方法可以以令人满意的再现性生长具有低位错密度的III族氮化物晶体。解决方案：用于生长III族氮化物晶体10的方法基于液相法，并且包括制备接地衬底1的方法和用于在III族氮化物晶体10的主表面1m上生长III族氮化物晶体10的方法通过将含有氮的气体5溶解在含有III族金属和碱金属的溶剂3中而获得的溶液6与基底表面1m接触而形成基底。在生长III族氮化物晶体10的过程中，晶体生长速度以≤1μm/ hr 2 的速度变化率从0μm/ hr逐渐增加。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2010024090A Method for growing group iii nitride crystal 有权
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2010024090A
公开(公告)日：2010-02-04
申请号：JP2008186994
申请日：2008-07-18
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： YOSHIDA HIROAKI , FUJIWARA SHINSUKE , TANAKA HARUKO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/12
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal having low average dislocation density and high crystallinity.
SOLUTION: The method for growing the group III nitride crystal includes: a step of preparing a ground substrate 10 which contains a group III nitride seed crystal 10a having one main plane 10m, wherein the off angle θ of the main plane 10m to the {0001} plane 10c of the group III nitride seed crystal 10a is within a range of 0.5-10.0°; and a step of growing a group III nitride crystal 20 on the main plane 10m by bringing a solution 17, obtained by dissolving a nitrogen-containing gas 15 into a solvent 13 containing a group III metal, into contact with the main plane 10m of the ground substrate 10. Further, in the process for growing the group III nitride crystal 20, the ground substrate 10 is arranged so that the inclination angle ϕ of the main plane 10m of the ground substrate 10 to the surface 17m of the solution 17 satisfies following relation: θ≤ϕ≤θ+26.5°.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种生长具有低平均位错密度和高结晶度的III族氮化物晶体的方法。解决方案：用于生长III族氮化物晶体的方法包括：准备包含具有一个主平面10m的III族氮化物晶种10a的接地衬底10的步骤，其中主平面10m的偏离角θ与 III族氮化物晶种10a的ä0001}面10c在0.5〜10.0度的范围内; 以及通过将含氮气体15溶解到含有III族金属的溶剂13而获得的溶液17与主平面10m的主平面10m接触的方式，在主平面10m上生长III族氮化物晶体20的步骤接地衬底10.此外，在用于生长III族氮化物晶体20的工艺中，接地衬底10被布置成使得接地衬底10的主平面10m与溶液17的表面17m的倾斜角φ满足以下关系：θ≤φ≤θ+ 26.5°。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009091182A Method for growing group iii nitride crystal 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2009091182A
公开(公告)日：2009-04-30
申请号：JP2007262107
申请日：2007-10-05
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： UEMATSU KOJI , YOSHIDA HIROAKI , HIROTA TATSU , FUJIWARA SHINSUKE , TANAKA HARUKO
IPC分类号： C30B29/38 , C30B19/04
CPC分类号： C30B29/403 , C30B19/04
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, capable of growing a large crystal by a liquid phase process.
SOLUTION: The method for growing a group III nitride crystal 10 is a process for growing the crystal by a liquid phase process comprises: a step of preparing a group III nitride crystal substrate 1 having the same chemical composition as the group III nitride crystal 10 and a thickness of ≥0.5 mm and; a step of bringing a solution, which is prepared by dissolving a nitrogen-containing gas 5 into a solvent 3 containing a group III metal, into contact with a major surface 1m of the group III nitride crystal substrate 1, to grow the group III nitride crystal 10 on the major surface 1m.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种能够通过液相法生长大晶体的III族氮化物晶体的生长方法。解决方案：用于生长III族氮化物晶体10的方法是通过液相法生长晶体的工艺，包括：制备具有与III族氮化物相同的化学组成的III族氮化物晶体衬底1的步骤晶体10，厚度≥0.5mm; 将通过将含氮气体5溶解到含有III族金属的溶剂3中制备的溶液与III族氮化物晶体基板1的主表面1m接触的步骤，以使III族氮化物水晶10在主面1m。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2009073704A Method for growing group iii nitride crystal 有权
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2009073704A
公开(公告)日：2009-04-09
申请号：JP2007245838
申请日：2007-09-21
申请人： Osaka Univ , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 国立大学法人大阪大学
发明人： YOSHIDA HIROAKI , FUJIWARA SHINSUKE , HIROTA TATSU , UEMATSU KOJI , TANAKA HARUKO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/04 , C30B19/12
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal having a low dislocation density with a non-polar plane as a main plane. SOLUTION: The method for growing the group III nitride crystal includes the step of preparing a base substrate 10 where the base substrate 10 contains the group III nitride crystal 10a having one main surface 10m and the main surface 10m is tilted at the angle of 0.1°-10° toward the ä1-100} surface 10c of the group III nitride crystal, and further includes the step of epitaxially growing the first group III nitride crystal 20 on the main surface 10m of the base substrate 10 by contacting a solution having a nitrogen gas 5 dissolved in a solvent 3 containing the group III metal and an alkaline metal on the main surface of 10m of the base substrate 10. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种以非极性平面作为主平面来生长具有低位错密度的III族氮化物晶体的方法。解决方案：用于生长III族氮化物晶体的方法包括制备基底10的步骤，其中基底10含有具有一个主表面10m并且主表面10m倾斜角度的III族氮化物晶体10a 对于III族氮化物晶体的ä1-100}表面10c为0.1°-10°，并且还包括通过使基底衬底10的主表面10m上的第一III族氮化物晶体20的主表面10m上的溶液具有溶解在含有III族金属的溶剂3中的氮气5和在基底10的10m主表面上的碱金属。（C）2009，JPO＆INPIT

7. 发明专利

JP2009137771A Method for growing group iii nitride crystal 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2009137771A
公开(公告)日：2009-06-25
申请号：JP2007312537
申请日：2007-12-03
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUJIWARA SHINSUKE , SUMITOMO TAKAMICHI , YOSHIDA HIROAKI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a Group III nitride crystal in a liquid phase process wherein the dislocation does not increase when the crystal being grown.
SOLUTION: The method is provided with a step for providing a substrate 1 which has the same chemical composition as a Group III nitride crystal 10 and contains a Group III nitride seed crystal 1a having a main surface 1m, and a step for growing a Group III nitride crystal 10 on the main surface 1m by contacting a solution obtained by dissolving a nitrogen-containing gas 5 into a solvent 3 containing a Group III metal and an alkaline metal onto the main surface 1m of the substrate 1, wherein the crystal growing speed of the Group III nitride crystal 10 is lower than the critical crystal growth speed at which the dislocation of the Group III nitride crystal 10 begins to increase.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种在液相中生长III族氮化物晶体的方法，其中当晶体生长时位错不增加。解决方案：该方法具有提供具有与III族氮化物晶体10相同的化学成分的基板1的步骤，并且包含具有主表面1m的III族氮化物晶种1a和用于生长的步骤通过使含氮气体5溶解在含有III族金属和碱金属的溶剂3中得到的溶液与基板1的主面1m接触，使主表面1m上的III族氮化物晶体10， III族氮化物晶体10的生长速度低于III族氮化物晶体10的位错开始增加的临界晶体生长速度。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2009062229A Group iii nitride crystal and method for growing the same 有权
标题翻译：第III组氮化物晶体及其生长方法
公开(公告)号：JP2009062229A
公开(公告)日：2009-03-26
申请号：JP2007231708
申请日：2007-09-06
申请人： Osaka Univ , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 国立大学法人大阪大学
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , KAWASE TOMOHIRO , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, by which the group III nitride crystal having a large size and a low dislocation density can be grown by a liquid phase method.
SOLUTION: The method for growing the group III nitride crystal includes a process for preparing a substrate 1 which contains a group III nitride seed crystal 1a having the same chemical composition as that of the group III nitride crystal 10 and a flat main surface 1m on one main surface side, and a process for growing the group III nitride crystal 10 on the main surface 1m by bringing a solution, obtained by dissolving a nitrogen-containing gas into a solvent 3 containing a group III metal, an alkali metal and a group VI element-containing substance, into contact with the main surface 1m of the substrate 1. The group III nitride crystal is grown in such states that the crystal growth surface 10g of the group III nitride crystal 10 includes a plurality of macrosteps 10gp, 10gq, each macrostep includes a step surface 10gs and a terrace surface 10gt, and the terrace surface is flat.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于生长III族氮化物晶体的方法，通过该方法可以通过液相法生长具有大尺寸和低位错密度的III族氮化物晶体。解决方案：用于生长III族氮化物晶体的方法包括制备基板1的方法，该基板1包含具有与III族氮化物晶体10相同的化学组成的III族氮化物晶种1a和平坦的主表面在一个主表面侧具有1μm，并且通过将含氮气体溶解到含有III族金属的溶剂3，碱金属和碱金属中而获得的溶液，使主表面1m上的III族氮化物晶体10生长含有Ⅵ元素的物质与基板1的主表面1m接触。该III族氮化物晶体以这样的状态生长，即III族氮化物晶体10的晶体生长表面10g包括多个宏步骤10gp， 10gq，每个宏步骤包括台阶表面10gs和平台表面10gt，并且平台表面是平坦的。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2009029672A Group iii nitride crystal and method for growing the same 审中-公开
标题翻译：第III组氮化物晶体及其生长方法
公开(公告)号：JP2009029672A
公开(公告)日：2009-02-12
申请号：JP2007196306
申请日：2007-07-27
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , HIROTA TATSU , UEMATSU KOJI , TANAKA HARUKO
IPC分类号： C30B29/38 , C30B19/04 , C30B19/12
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal in which a large crystal can be grown by a liquid phase process. SOLUTION: The method for growing the group III nitride crystal 10 by a liquid phase process comprises the steps of: preparing a substrate 1 having a flat principal plane 1m, wherein the substrate includes a group III nitride seed crystal 1a having the same chemical composition as the group III nitride crystal 10 at least at the side of the principal plane 1m and the average density of the threading dislocation in the principal plane 1m is 5×10 6 cm -2 or less; and bringing the principal plane 1m of the substrate 1 into contact with a solution obtained by dissolving a nitrogen-containing gas 5 in a solvent 3 containing a group III metal to grow the group III nitride crystal 10 on the principal plane 1m. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种生长其中可以通过液相法生长大晶体的III族氮化物晶体的方法。解决方案：通过液相法生长III族氮化物晶体10的方法包括以下步骤：制备具有平面主平面1m的衬底1，其中衬底包括具有相同的III族氮化物晶体1a 至少在主平面1m侧的III族氮化物晶体10的化学组成和主面1m中的穿透位错的平均密度为5×10 6 或更少; 并使基板1的主面1m与通过将含氮气体5溶解在含有III族金属的溶剂3中而获得的溶液接触，以在主平面1m上生长III族氮化物晶体10。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2009023861A Group iii nitride crystal and method for growing the same 有权
标题翻译：第III组氮化物晶体及其生长方法
公开(公告)号：JP2009023861A
公开(公告)日：2009-02-05
申请号：JP2007187080
申请日：2007-07-18
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , HIROTA TATSU , UEMATSU KOJI , TANAKA HARUKO
IPC分类号： C30B29/38 , C30B19/04
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal by which a large crystal can be grown in a liquid phase method.
SOLUTION: The method for growing a group III nitride crystal aims to grow a group III nitride crystal 10 by a liquid phase method. The method includes the steps of: preparing a substrate 1 that has a flat principal plane 1m, contains a group III nitride seed crystal 1a in at least the principle plane 1m side, the seed crystal having the same chemical composition as that of the group III nitride crystal 10, and has a radius of curvature of not less than 2 m as a warpage of a (hkil)-plane 1n nearest to the principal plane 1m, wherein i=-(h+k) and each of h, k and l is an integer from -9 to 9; and bringing a solution prepared by dissolving a nitrogen-containing gas 5 in a solvent 3 containing a group III metal into contact with the principal plane 1m of the substrate 1 to grow the group III nitride crystal 10 on the principal plane 1m.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于生长可以以液相法生长大晶体的III族氮化物晶体的方法。解决方案：用于生长III族氮化物晶体的方法旨在通过液相法生长III族氮化物晶体10。该方法包括以下步骤：制备具有平坦主平面1m的基板1，至少在主平面1m侧包含III族氮化物晶种1a，晶种具有与III组相同的化学组成氮化物晶体10，并且具有不小于2μm的曲率半径作为最接近主平面1m的（hkil）面1n的翘曲，其中i = - （h + k）以及h，k和 l为-9〜9的整数; 并将通过将含氮气体5溶解在含有III族金属的溶剂3中制备的溶液与基板1的主平面1m接触，以在主平面1m上生长III族氮化物晶体10。版权所有（C）2009，JPO＆INPIT

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