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1. 发明专利

JP2014157980A Group iii nitride composite substrate, lamination group iii nitride composite substrate, group iii nitride semiconductor device and method for manufacturing the same 有权
标题翻译： III族氮化物复合基板，III族氮化物复合基板，III族氮化物半导体器件及其制造方法
公开(公告)号：JP2014157980A
公开(公告)日：2014-08-28
申请号：JP2013029123
申请日：2013-02-18
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： YANAGISAWA TAKUYA , ISHIBASHI KEIJI , UEMATSU KOJI , SEKI HIROKI , YAMAMOTO YOSHIYUKI
IPC分类号： H01L21/02 , H01L21/20 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride composition substrate which can be manufactured at low costs and has a group III nitride film having a large diameter, thin film thickness and high crystal quality, a lamination group III nitride composition substrate, a group III nitride semiconductor device and a method for manufacturing the same.SOLUTION: A group III nitride composite substrate is a group III nitride composite substrate in which a diameter where a support substrate is stuck to a group III nitride film having a thickness of ≥50 nm and ≤10 μm, is equal to or more than 75 mm, and has a bond film arranged between the support substrate and the group III nitride film and bonding the support substrate to the group III nitride film. A thickness distribution of the bond film is equal to or more than 2% and equal to or less than 40%.
摘要翻译：要解决的问题：为了提供能够以低成本制造并具有大直径，薄膜厚度和高结晶质量的III族氮化物膜的III族氮化物组合物基材，层叠III族氮化物组合物基材，组 III族氮化物半导体器件及其制造方法。解决方案：III族氮化物复合衬底是其中支撑衬底粘附到厚度≥50nm的III族氮化物膜的直径的III族氮化物复合衬底 ≤10μm等于或大于75mm，并且在支撑基板和III族氮化物膜之间具有粘合膜，并将支撑基板接合到III族氮化物膜。接合膜的厚度分布等于或大于2％且等于或小于40％。

2. 发明专利

JP2014055103A Method for producing group iii nitride crystal 审中-公开
标题翻译：生产III类氮化物晶体的方法
公开(公告)号：JP2014055103A
公开(公告)日：2014-03-27
申请号：JP2013229570
申请日：2013-11-05
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： KASAI HITOSHI , OKAHISA TAKUJI , FUJITA SHUNSUKE , MATSUMOTO NAOKI , IJIRI HIDEYUKI , SATO FUMITAKA , MOTOKI KENSAKU , NAKAHATA SEIJI , UEMATSU KOJI , HIROTA TATSU
IPC分类号： C30B29/38 , C23C16/34 , C30B25/02 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a group III nitride crystal including a process for removing a material deposited in a reaction chamber during a crystal growth efficiently.SOLUTION: A method for producing a group III nitride crystal 11 comprises: a step for cleaning a reaction chamber 110 by introducing HCl gas 1 in the reaction chamber 110; and a step for growing a group III crystal 11 doped with O atoms and Si atoms by a vapor growth in the cleaned reaction chamber 110, in which the group III nitride crystal 11 includes a facet growth region and a C plane growth region and the oxygen concentration of the facet growth region is 1.2×10cmor less.
摘要翻译：要解决的问题：提供一种制造III族氮化物晶体的方法，其包括在有效地生长晶体生长期间去除在反应室中沉积的材料的方法。解决方案：一种制备III族氮化物晶体11的方法包括：步骤用于通过在反应室110中引入HCl气体1来清洁反应室110; 以及在清洁的反应室110中通过气相生长生长掺杂有O原子和Si原子的III族晶体11的步骤，其中III族氮化物晶体11包括面生长区和C平面生长区，氧小面生长区域的浓度为1.2×10cm以下。

3. 发明专利

JP2013116848A METHOD FOR PRODUCING GaAs-BASED FILM, AND COMPOSITE SUBSTRATE USED FOR THE METHOD 审中-公开
标题翻译：用于生产基于GaAs的膜的方法和用于该方法的复合基板
公开(公告)号：JP2013116848A
公开(公告)日：2013-06-13
申请号：JP2012128086
申请日：2012-06-05
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SATO KAZUNARI , SEKI YUKI , UEMATSU KOJI , YAMAMOTO YOSHIYUKI , MATSUBARA HIDEKI , FUJIWARA SHINSUKE , YOSHIMURA MASASHI
IPC分类号： C04B41/87 , C23C16/01 , C30B29/42 , C30B33/10 , H01L23/15
摘要： PROBLEM TO BE SOLVED: To provide a method for producing GaAs-based film having large area of a main surface, little warpage and excellent crystallinity obtained at low cost, and to provide a composite substrate used for the method.SOLUTION: The method for producing GaAs-based film includes the steps of: preparing a composite substrate 10 which contains a support base 11 to be dissolved into hydrofluoric acid and a single crystal film 13 arranged on a main surface 11m of the support base 11, and has a thermal expansion coefficient in the main surface 11m of the support base 11 which is greater than 0.8 time and less than 1.2 time compared with the thermal expansion coefficient of the GaAs crystal; forming GaAs-based film 20 on a main surface 13 of the single crystal film 13 arranged on the main surface 11m side of the support base 11; and removing the support base 11 by dissolving into hydrofluoric acid.
摘要翻译：要解决的问题：提供一种生产具有大面积主表面的GaAs基膜的方法，以低成本获得的弯曲变形和结晶度优异，并提供了用于该方法的复合基板。解决方案：用于制备GaAs基膜的方法包括以下步骤：制备复合衬底10，其包含待溶解在氢氟酸中的支撑基底11和布置在支撑体的主表面11m上的单晶膜13 基座11，与GaAs晶体的热膨胀系数相比，支撑基体11的主面11m的热膨胀系数大于0.8倍且小于1.2倍; 在布置在支撑基体11的主表面11m侧的单晶膜13的主表面13上形成GaAs基膜20; 并通过溶解在氢氟酸中去除载体基体11。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012066983A METHOD FOR GROWING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE 有权
标题翻译：用于生长GaN晶体和GaN晶体衬底的方法
公开(公告)号：JP2012066983A
公开(公告)日：2012-04-05
申请号：JP2010215164
申请日：2010-09-27
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUJIWARA SHINSUKE , UEMATSU KOJI , OSADA HIDEKI
IPC分类号： C30B29/38 , H01L21/205
CPC分类号： H01L21/0262 , C30B23/025 , C30B25/18 , H01L21/02389 , H01L21/02433 , H01L21/0254
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a GaN crystal where the occurrence of a stacking fault is suppressed even if the GaN crystal is grown on a GaN seed crystal substrate whose principal plane is inclined at 20° or more and 90° or less from a (0001) plane.SOLUTION: In the method for growing the GaN crystal including a step to prepare the GaN seed crystal substrate 10 whose principal plane 10m is inclined at 20° or more and 90° or less from the (0001) plane 10c and a step to grow the GaN crystal 20 on the GaN seed crystal substrate 10, the difference of the concentration of impurities between the GaN seed crystal substrate 10 and the GaN crystal 20 is 3×10cmor less.
摘要翻译：要解决的问题：为了提供一种用于生长GaN晶体的方法，其中即使GaN晶体在其主平面倾斜在20°以上的GaN晶种基板上生长，也可抑制堆垛发生的发生，（0001）面为90°以下。解决方案：在用于生长GaN晶体的方法中，包括制备其主平面10m从（0001）面10c倾斜到20°以上且90°以下的GaN晶种基板10的工序，为了在GaN晶种衬底10上生长GaN晶体20，GaN晶种衬底10和GaN晶体20之间的杂质浓度差为3×10 cm - 3 或更少。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2012031028A GROWTH METHOD FOR GaN CRYSTAL 有权
标题翻译： GaN晶体的生长方法
公开(公告)号：JP2012031028A
公开(公告)日：2012-02-16
申请号：JP2010173554
申请日：2010-08-02
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUJIWARA SHINSUKE , MORISHITA MASANORI , YOSHIDA HIROAKI , UEMATSU KOJI , HIROMURA YUKI
IPC分类号： C30B29/38 , C23C16/34 , C30B25/20 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method for growing up a large-sized GaN crystal in HVPE (Hydride Vapor Phase Epitaxy) at a crystal growth temperature of 1,100°C or less.SOLUTION: The growth method includes a step of preparing plural GaN seed crystal substrates 1 which have a main surface 1m of predetermined plane orientation and plural side surfaces 1s, a step of arranging the plural GaN seed crystal substrates 1 so that those main surfaces 1m may adjoin mutually in parallel and those side surfaces 1s adjoin mutually, and a step of growing up the first GaN crystal 10 on the main surfaces 1m of the arranged plural GaN seed crystal substrates 1 by a hydride vapor phase epitaxy, and in the step of growing up the first GaN crystal 10, respective partial crystals 10u which grow on the main surfaces 1m of the GaN seed crystal substrates 1 are grown up so that respective partial crystals 10u may be unified by making the crystal growth temperature into 980°C or more and 1,100°C or less.
摘要翻译：要解决的问题：提供一种在1100℃以下的晶体生长温度下在HVPE（氢化物气相外延）中生长大尺寸GaN晶体的方法。解决方案：生长方法包括制备具有预定平面取向的主表面1m和多个侧表面1s的多个GaN晶种衬底1的步骤，将多个GaN晶种衬底1布置成那些主要表面1m可以相互平行地邻接，并且那些侧表面1s相互相连，并且通过氢化物气相外延在配置的多个GaN晶种衬底1的主表面1m上生长第一GaN晶体10的步骤，并且在生长第一GaN晶体10的步骤，生长在GaN晶种衬底1的主表面1m上生长的各自的部分晶体10u，从而通过使晶体生长温度成为980℃来使各个部分晶体10u一体化以上且1100℃以下。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2010208935A Nitride semiconductor 有权
标题翻译：氮化物半导体
公开(公告)号：JP2010208935A
公开(公告)日：2010-09-24
申请号：JP2010050325
申请日：2010-03-08
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NAKAHATA SEIJI , UEMATSU KOJI
IPC分类号： C30B29/38 , C23C16/34 , C30B25/20 , H01L21/205 , H01L21/302 , H01L21/306 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a single crystal substrate which is suitable for producing a device thereon as a single crystal of a polarity of A in at least its surface, in a crystal in which parts having different polarities A and B and having opposite structure with respect to the crystal orientation coexist, and to provide a method for producing the same. SOLUTION: In a crystal in which parts having different polarities A and B and having opposite structure with respect to the crystal orientation coexist, the surface part is removed by etching the part of the polarity B or the part of the polarity B is covered with a different kind of substance (mask)M without removing the part of the polarity B, and the same crystal is grown so as to cover the surface with a crystal having the polarity A. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种适合于在其表面上至少具有极性为A的单晶在其上生产其中的器件的单晶衬底，在具有不同极性A和B的部分的晶体中，以及相对于晶体取向具有相反的结构，并提供其制造方法。解决方案：在具有不同极性A和B并且相对于晶体取向具有相反结构的部分共存的晶体中，通过蚀刻极性B的一部分来去除表面部分，或者极性B的一部分是在不去除部分极性B的情况下用不同种类的物质（掩模）M覆盖，生长相同的晶体，以便用具有极性A的晶体覆盖表面。（C）2010， JPO＆INPIT

7. 发明专利

JP2009057247A Method for growing group iii nitride crystal, and group iii nitride crystal substrate 审中-公开
标题翻译：用于生长III族氮化物晶体和III族氮化物晶体基板的方法
公开(公告)号：JP2009057247A
公开(公告)日：2009-03-19
申请号：JP2007226025
申请日：2007-08-31
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： YOSHIDA HIROAKI , FUJIWARA SHINSUKE , HIROTA TATSU , UEMATSU KOJI , TANAKA HARUKO
IPC分类号： C30B29/38 , C30B19/12
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal which has a nonpolar surface as its principal surface, and has a low dislocation density; and the group III nitride crystal substrate.
SOLUTION: The method for growing a group III nitride crystal comprises a step of preparing a ground substrate 10 which includes a group III nitride seed crystal 10a at least at the principal surface 10m side and of which the principal surface 10m has an inclination angle of ≥0.5° to ≤10° with respect to the {1-100} surface 10c of the group III nitride crystal layer 10a and a step of growing a group III nitride crystal 20 on the principal surface 10 m of the ground substrate 10. When the group III nitride crystal 20 is grown, at least one portion of the dislocation remaining in the group III nitride crystal 20 is propagated in a direction substantially parallel to the {1-100} surface 10c and discharged to the outer peripheral part of the group III nitride crystal 20.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种生长具有非极性表面作为其主表面并具有低位错密度的III族氮化物晶体的方法; 和III族氮化物晶体衬底。解决方案：用于生长III族氮化物晶体的方法包括制备接地衬底10的步骤，该衬底10至少在主表面10m侧包括III族氮化物晶种10a，其主表面10m具有倾斜相对于III族氮化物晶体层10a的ä1-100}面10c为≥0.5°〜≤10°的角度，以及在接地基板10的主面10m上生长III族氮化物晶体20的工序。当III族氮化物晶体20生长时，残留在III族氮化物晶体20中的位错的至少一部分在基本上平行于ä1-100}表面10c的方向上传播并且被排放到组的外周部分 III型氮化物晶体20.版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2009023862A Group iii nitride crystal and method for growing the same 有权
标题翻译：第III组氮化物晶体及其生长方法
公开(公告)号：JP2009023862A
公开(公告)日：2009-02-05
申请号：JP2007187081
申请日：2007-07-18
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , HIROTA TATSU , UEMATSU KOJI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal by which a large crystal can be grown in a liquid phase method.
SOLUTION: The method for growing a group III nitride crystal aims to grow a group III nitride crystal 10 by a liquid phase method. The method includes the steps of: preparing a substrate 1 that has a flat principal plane 1m, contains a group III nitride seed crystal 1a in at least the principal plane 1m side, the seed crystal having the same chemical composition as that of the group III nitride crystal 10, and has a radius of curvature of not less than 2 m as a warpage of a (hkil)-plane 1n nearest to the principal plane 1m, wherein i=-(h+k) and each of h, k and l is an integer from -9 to 9; and bringing a solution prepared by dissolving a nitrogen-containing gas 5 in a solvent 3 containing a group III metal and an alkali metal into contact with the principal plane 1m of the substrate 1 to grow the group III nitride crystal 10 on the principal plane 1m.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种用于生长可以以液相法生长大晶体的III族氮化物晶体的方法。解决方案：用于生长III族氮化物晶体的方法旨在通过液相法生长III族氮化物晶体10。该方法包括以下步骤：制备具有平坦主平面1m的基板1，至少在主平面1m侧包含III族氮化物晶种1a，晶种具有与III组相同的化学组成氮化物晶体10，并且具有不小于2μm的曲率半径作为最接近主平面1m的（hkil）面1n的翘曲，其中i = - （h + k）以及h，k和 l为-9〜9的整数; 并将通过将含氮气体5溶解在含有III族金属和碱金属的溶剂3中制备的溶液与基板1的主平面1m接触，以在主平面1m上生长III族氮化物晶体10 。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008260652A Method for producing group iii nitride crystal 审中-公开
标题翻译：生产III类氮化物晶体的方法
公开(公告)号：JP2008260652A
公开(公告)日：2008-10-30
申请号：JP2007104074
申请日：2007-04-11
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： UEMATSU KOJI , MIYANAGA TOMOMASA , NAKAHATA HIDEAKI
IPC分类号： C30B29/38 , C30B25/04 , H01L21/205 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a method for producing group III nitride crystals having a low dislocation density by bringing the dislocation together in a particular part and confining it even if the crystals are thickly grown. SOLUTION: This method comprises the steps of forming a plurality of masks 14 on a part of a principal surface 10m of a base substrate 10 and growing group III nitride crystals 20 including phase boundaries 26 connected to end faces 14e of the masks 14 on the principal surface 10m. Each mask 14 comprises a silicon compound mask and a transition metal mask having a melting point of 1,000°C or higher in contact with at least a part of the end face of the silicon compound mask. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种通过将特定部位的位错聚集在一起而制造具有低位错密度的III族氮化物晶体的方法，并且即使晶体厚生长也将其限制。解决方案：该方法包括以下步骤：在基底基板10的主表面10m的一部分上形成多个掩模14，以及包括连接到掩模14的端面14e的相位边界26的生长III族氮化物晶体20 主表面10m。每个掩模14包括与硅化合物掩模的至少一部分端接触的熔点为1000℃或更高的硅化合物掩模和过渡金属掩模。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2008195597A Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device 有权
标题翻译：用于生产III族氮化物晶体，III族氮化物晶体基板和III族氮化物半导体器件的方法
公开(公告)号：JP2008195597A
公开(公告)日：2008-08-28
申请号：JP2007114480
申请日：2007-04-24
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIROTA TATSU , UEMATSU KOJI , KAWASE TOMOHIRO
IPC分类号： C30B29/38 , C30B19/12 , H01L33/00 , H01L33/32 , H01S5/343
CPC分类号： C30B29/403 , C30B9/00 , C30B19/00 , C30B33/10 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02625 , H01L21/02628 , H01L21/02639 , H01L33/0075 , H01L33/08 , H01L33/16 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a process for producing a large-size Group III nitride crystal in which the dislocation density of at least the surface thereof is wholly low. SOLUTION: The production process is characterized in that it comprises a step of providing a base substrate (1) comprising a Group III nitride seed crystal having a main area (1s) and a polarity reversed area (1t) having polarity reversed in direction to the main area (1s), and a step of growing a Group III nitride crystal (10) by a liquid phase method on the main area (1s) and the polarity reversed area (1t) in the base substrate (1); and a first area (10s) having a higher growth rate of the Group III nitride crystal (10) grown on the main area (1s) covers a second area (10t) having lower growth rate of the Group III nitride crystal (10) grown on the polarity reversed area (1t). COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种其中至少其表面的位错密度完全低的大尺寸III族氮化物晶体的制造方法。解决方案：制造方法的特征在于其包括提供包括具有极性反转的主区域（1s）和极性反转区域（1t）的III族氮化物晶种的基底基板（1）的步骤，朝向主区域（1s）的方向，以及通过液相法在基板（1）的主区域（1）和极性反转区域（1t）上生长III族氮化物晶体（10）的步骤 1）; 并且在主区域（1s）上生长的具有较高生长速度的III族氮化物晶体（10）的第一区域（10s）覆盖具有较低生长速率的第III族氮化物晶体（10）生长的第二区域（10t）在极性反转区域（1t）上。版权所有（C）2008，JPO＆INPIT

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