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1. 发明专利

JP2010024125A Method for growing group iii nitride crystal 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2010024125A
公开(公告)日：2010-02-04
申请号：JP2008191203
申请日：2008-07-24
申请人： Osaka Univ , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 国立大学法人大阪大学
发明人： FUJIWARA SHINSUKE , HIROTA TATSU , YOSHIDA HIROAKI , UEMATSU KOJI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, wherein the workability is improved in a flux method as a liquid phase method.
SOLUTION: The method for growing a group III nitride crystal is carried out by a liquid phase method, including a step of preparing a base substrate 1 and a step of growing a group III nitride crystal 10 on the major surface 1m of the base substrate 1 by bringing the major surface 1m into contact with a solution prepared by dissolving a nitrogen-containing gas 5 into a solvent 3 containing a group III metal and an alkali metal, wherein the ratio of the molar number of the alkali metal to the total molar number of the group III metal and the alkali metal is 0.001 to
摘要翻译：待解决的问题：提供一种用于生长III族氮化物晶体的方法，其中在作为液相法的通量法中可加工性得到改善。解决方案：用于生长III族氮化物晶体的方法通过液相法进行，包括制备基底基板1的步骤和在第一III族氮化物晶体的主表面1m上生长III族氮化物晶体10的步骤通过使主表面1m与通过将含氮气体5溶解在含有III族金属和碱金属的溶剂3中而制备的溶液接触，其中碱金属摩尔数与 III族金属和碱金属的总摩尔数为0.001〜0.2。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009091183A Method for growing group iii nitride crystal 有权
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2009091183A
公开(公告)日：2009-04-30
申请号：JP2007262114
申请日：2007-10-05
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： UEMATSU KOJI , HIROTA TATSU , YOSHIDA HIROAKI , FUJIWARA SHINSUKE , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, capable of growing a large crystal by a liquid phase process.
SOLUTION: The method for growing a group III nitride crystal 10 is a process for growing the crystal by a liquid phase process comprises: a step of preparing a group III nitride crystal substrate 1 having the same chemical composition as the group III nitride crystal 10 and a thickness of ≥0.5 mm and; a step of bringing a solution, which is obtained by dissolving a nitrogen-containing gas 5 into a solvent 3 containing a group III metal and an alkali metal, into contact with a major surface 1m of the group III nitride crystal substrate 1, to grow the group III nitride crystal 10 on the major surface 1m.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种生长能够通过液相法生长大晶体的III族氮化物晶体的方法。解决方案：用于生长III族氮化物晶体10的方法是通过液相法生长晶体的工艺，包括：制备具有与III族氮化物相同的化学组成的III族氮化物晶体衬底1的步骤晶体10，厚度≥0.5mm; 通过将含氮气体5溶解在含有III族金属和碱金属的溶剂3中而与III族氮化物晶体基板1的主面1m接触而获得的溶液的生长步骤主表面1m上的III族氮化物晶体10。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009051686A Method for growing group iii nitride crystal 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2009051686A
公开(公告)日：2009-03-12
申请号：JP2007218530
申请日：2007-08-24
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： YOSHIDA HIROAKI , FUJIWARA SHINSUKE , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/12
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a Group III nitride single crystal capable of reducing its dislocation density.
SOLUTION: The method for growing a Group III nitride crystal is for growing a first Group III nitride crystal 20 on the main surface 10m of a base substrate 10 using a melt containing a Group III metal element and an alkali metal element by a liquid phase process. The base substrate 10 contains a Group III nitride crystal layer 10a at least at the main surface 10m side and the normal 10mv of the main surface 10m of the base substrate 10 has a tilt angle to direction 10cv of the Group III nitride crystal layer 10a of 1-10°. When the first Group III nitride crystal 20 grows, at least a part of dislocation remaining in the first Group III nitride crystal 20 is transferred to {0001} plane 20c substantially in a parallel direction and discharged to the outer periphery of the first Group III nitride crystal 20.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够降低其位错密度的III族氮化物单晶的生长方法。解决方案：用于生长III族氮化物晶体的方法是使用含有III族金属元素和碱金属元素的熔体在基底10的主表面10m上生长第一III族氮化物晶体20 液相法。基底基板10至少在主表面10m侧包含III族氮化物晶体层10a，并且基底基板10的主表面10m的正常10mv具有III族氮化物晶体的<0001>方向10cv的倾斜角层10a为1-10°。当第一III族氮化物晶体20生长时，残留在第一III族氮化物晶体20中的位错的至少一部分基本上沿平行方向被转移到ä0001}平面20c并且被排放到第一III族氮化物晶体的外周 20.版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2009029673A Group iii nitride crystal and method for growing the same 审中-公开
标题翻译：第III组氮化物晶体及其生长方法
公开(公告)号：JP2009029673A
公开(公告)日：2009-02-12
申请号：JP2007196307
申请日：2007-07-27
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , HIROTA TATSU , UEMATSU KOJI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/04 , C30B19/12
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal in which a large crystal can be grown by a liquid phase process. SOLUTION: The method for growing the group III nitride crystal 10 by a liquid phase process comprises the steps of: preparing a substrate 1 having a flat principal plane 1m, wherein the substrate includes a group III nitride seed crystal 1a having the same chemical composition as the group III nitride crystal 10 at least at the side of the principal plane 1m and the average density of the threading dislocation in the principal plane 1m is 5×10 6 cm -2 or less; and bringing the principal plane 1m of the substrate 1 into contact with a solution obtained by dissolving a nitrogen-containing gas 5 in a solvent 3 containing a group III metal and an alkali metal to grow the group III nitride crystal 10 on the principal plane 1m. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种生长其中可以通过液相法生长大晶体的III族氮化物晶体的方法。解决方案：通过液相法生长III族氮化物晶体10的方法包括以下步骤：制备具有平面主平面1m的衬底1，其中衬底包括具有相同的III族氮化物晶体1a 至少在主平面1m侧的III族氮化物晶体10的化学组成和主面1m中的穿透位错的平均密度为5×10 6 或更少; 并使基板1的主面1m与通过将含氮气体5溶解在含有III族金属和碱金属的溶剂3中而获得的溶液接触，以在主平面1m上生长III族氮化物晶体10 。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2009012986A Method for manufacturing group iii nitride crystal and group iii nitride crystal substrate 有权
标题翻译：制造III类氮化物晶体和III族氮化物晶体基板的方法
公开(公告)号：JP2009012986A
公开(公告)日：2009-01-22
申请号：JP2007173141
申请日：2007-06-29
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： HIROTA TATSU , KAWASE TOMOHIRO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/04
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride crystal, by which the group III nitride crystal having low dislocation density and high crystallinity can be grown on a ground substrate by reducing the dislocation density in the surface of the ground substrate; and to provide a group III nitride crystal substrate.
SOLUTION: The method for manufacturing the group III nitride crystal comprises growing a group III nitride crystal 20 by reacting a group III element and nitrogen in a solution 3 and includes: a process for subjecting the surface layer 10a of a ground substrate 10, in which at least the surface layer 10a and a surface side part 10b adjacent to the surface layer 10a are formed from a group III nitride seed crystal, to melt backing; a process for growing a group III nitride crystal 20 on the ground substrate 10 subjected to the melt backing; and at least one cycle of the crystal melt back-growth cycle comprising subjecting the surface layer 20a of the group III nitride crystal 20 to melt backing and growing the group III nitride crystal 20.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造III族氮化物晶体的方法，通过该方法可以通过降低表面上的位错密度，在接地衬底上生长具有低位错密度和高结晶度的III族氮化物晶体地面基板; 并提供III族氮化物晶体衬底。解决方案：制造III族氮化物晶体的方法包括通过在溶液3中使III族元素和氮反应而生长III族氮化物晶体20，并且包括：对接地衬底10的表面层10a进行处理的工艺其中至少表面层10a和与表面层10a相邻的表面侧部分10b由III族氮化物晶种形成以熔化背衬; 在经受熔融背衬的接地基板10上生长III族氮化物晶体20的方法; 以及至少一个循环的晶体熔融回生循环，包括使III族氮化物晶体20的表面层20a熔化背衬并生长III族氮化物晶体20.版权所有：（C）2009，JPO＆INPIT

6. 发明专利

JP2009023862A Group iii nitride crystal and method for growing the same 有权
标题翻译：第III组氮化物晶体及其生长方法
公开(公告)号：JP2009023862A
公开(公告)日：2009-02-05
申请号：JP2007187081
申请日：2007-07-18
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , HIROTA TATSU , UEMATSU KOJI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal by which a large crystal can be grown in a liquid phase method.
SOLUTION: The method for growing a group III nitride crystal aims to grow a group III nitride crystal 10 by a liquid phase method. The method includes the steps of: preparing a substrate 1 that has a flat principal plane 1m, contains a group III nitride seed crystal 1a in at least the principal plane 1m side, the seed crystal having the same chemical composition as that of the group III nitride crystal 10, and has a radius of curvature of not less than 2 m as a warpage of a (hkil)-plane 1n nearest to the principal plane 1m, wherein i=-(h+k) and each of h, k and l is an integer from -9 to 9; and bringing a solution prepared by dissolving a nitrogen-containing gas 5 in a solvent 3 containing a group III metal and an alkali metal into contact with the principal plane 1m of the substrate 1 to grow the group III nitride crystal 10 on the principal plane 1m.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种用于生长可以以液相法生长大晶体的III族氮化物晶体的方法。解决方案：用于生长III族氮化物晶体的方法旨在通过液相法生长III族氮化物晶体10。该方法包括以下步骤：制备具有平坦主平面1m的基板1，至少在主平面1m侧包含III族氮化物晶种1a，晶种具有与III组相同的化学组成氮化物晶体10，并且具有不小于2μm的曲率半径作为最接近主平面1m的（hkil）面1n的翘曲，其中i = - （h + k）以及h，k和 l为-9〜9的整数; 并将通过将含氮气体5溶解在含有III族金属和碱金属的溶剂3中制备的溶液与基板1的主平面1m接触，以在主平面1m上生长III族氮化物晶体10 。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2009018961A Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device 有权
标题翻译：用于生产III族氮化物晶体，III族氮化物晶体基板和III族氮化物半导体器件的方法
公开(公告)号：JP2009018961A
公开(公告)日：2009-01-29
申请号：JP2007182709
申请日：2007-07-12
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： HIROTA TATSU , KAWASE TOMOHIRO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00 , C30B33/02 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a process for producing a Group III nitride crystal having a low dislocation density and a low impurity concentration without damaging the crystal. SOLUTION: Nitrogen gas (nitrogen-containing gas 3) was dissolved in a Ga-Na-Li melt 2 in a reaction vessel 7 to grow a GaN crystal having a thickness of 100 μm on a principal surface 1m of a GaN base substrate 1 (a). Subsequently, metal Na was put into the reaction vessel 7, and the resulting mixture was heated to form a Na melt which is a liquid 4 for crystal treatment, in which was dissolved nitrogen gas (nitrogen-containing gas 3) to heat-treat the GaN crystal (group III nitride crystal 10). As a result, the surface of the crystal was roughened, but the crystal itself was not broken. As for the impurity concentrations of the GaN crystal (group III nitride crystal 10) and the GaN base substrate 1, Na concentration was 5×10 15 cm -3 , which was the same as the Na concentration before heat treatment, while Li concentration was 3×10 16 cm -3 , which was significantly lower than the Li concentration before heat treatment. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种具有低位错密度和低杂质浓度的III族氮化物晶体的制造方法，而不损害晶体。解决方案：将氮气（含氮气体3）溶解在反应容器7中的Ga-Na-Li熔体2中，以在GaN基材的主表面1m上生长厚度为100μm的GaN晶体基板1（a）。随后，将金属Na放入反应容器7中，将所得混合物加热，形成作为结晶处理用液体4的Na熔体，其中为溶解氮气（含氮气体3），热处理 GaN晶体（III族氮化物晶体10）。结果，晶体的表面被粗糙化，但是晶体本身没有被破坏。对于GaN晶体（III族氮化物晶体10）和GaN基底基板1的杂质浓度，Na浓度为5×10 15×SP> -3 ，这是与热处理前的Na浓度相同，而Li浓度为3×10 16℃/ SP> -3 ，明显低于热处理前的Li浓度。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2011231013A Method for producing group iii nitride crystal and group iii nitride crystal substrate 有权
标题翻译：生产III类氮化物晶体和III族氮化物晶体基板的方法
公开(公告)号：JP2011231013A
公开(公告)日：2011-11-17
申请号：JP2011185092
申请日：2011-08-26
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： HIROTA RYU , KAWASE TOMOHIRO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38
摘要： PROBLEM TO BE SOLVED: To provide a method for producing group III nitride crystal and a group III nitride crystal substrate, where the surface dislocation density of a ground substrate is reduced and group III nitride crystal having a low dislocation density and high crystallinity is grown on the ground substrate.SOLUTION: The method for producing group III nitride crystal wherein group III nitride crystal 20 is grown by making a group III element and nitrogen react in a solution 3, includes: a process to meltback a surface layer 10a of the ground substrate 10 where at least the surface layer 10a and a surface side portion 10b adjacent to the surface layer 10a are formed by the group III nitride crystal; a process to grow the group III nitride crystal 20 on the meltbacked ground substrate 10; and a process to make the number of crystal meltback growing cycles to one or more cycles, meltbacking of the surface layer 20a of the group III nitride crystal 20 and growing of the group III nitride crystal 20 forming one cycle.
摘要翻译：要解决的问题：提供一种制造III族氮化物晶体和III族氮化物晶体基板的方法，其中接地衬底的表面位错密度降低，并且具有低位错密度和高结晶度的III族氮化物晶体在地基底上生长。解决方案：其中通过使III族元素和氮在溶液3中反应而生长III族氮化物晶体的方法包括：将基底10的表面层10a熔化的方法其中至少表面层10a和与表面层10a相邻的表面侧部分10b由III族氮化物晶体形成; 在熔融接地基板10上生长III族氮化物晶体20的工艺; 以及使晶体回熔生长周期数达到一个或多个循环，使III族氮化物晶体20的表面层20a回熔和形成一个循环的III族氮化物晶体20的生长的方法。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2010024124A Method for growing group iii nitride crystal 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2010024124A
公开(公告)日：2010-02-04
申请号：JP2008191128
申请日：2008-07-24
申请人： Osaka Univ , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 国立大学法人大阪大学
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, in which an increase in dislocation is suppressed during growing a crystal by a liquid phase method.
SOLUTION: The method for growing a group III nitride crystal includes a step of preparing a base substrate 1 and a step of growing a group III nitride crystal 10 on the major surface of the base substrate 1 by bringing the major surface 1m into contact with a solution prepared by dissolving a nitrogen-containing gas 5 into a solvent 3 containing a group III metal, an alkali metal and a metal that reduces the crystal growth rate of the group III nitride crystal. The crystal growth rate of the group III nitride crystal is less than the critical growth rate of the crystal where dislocation of the group III nitride crystal starts to increase. The alkali metal contains at least either Na or Li. The metal that decreases the crystal growth rate of the group III nitride crystal contains at least one metal selected from a group consisting of transition metals, Ge, Sn, Pb and Bi.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：待解决的问题：提供一种生长III族氮化物晶体的方法，其中通过液相法在晶体生长期间抑制位错增加。解决方案：用于生长III族氮化物晶体的方法包括制备基底基板1的步骤和通过使主表面1m进入基底基板1的主表面上生长III族氮化物晶体10的步骤与通过将含氮气体5溶解在含有III族金属，碱金属和金属的溶剂3中制备的溶液接触，所述III族金属，碱金属和金属降低III族氮化物晶体的晶体生长速率。 III族氮化物晶体的晶体生长速率小于III族氮化物晶体的位错开始增加的晶体的临界生长速率。碱金属至少含有Na或Li。降低III族氮化物晶体的晶体生长速度的金属含有选自过渡金属，Ge，Sn，Pb和Bi中的至少一种金属。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2010024089A Growth apparatus and growth method of group iii nitride crystal 有权
标题翻译：第三组氮化物晶体的生长装置和生长方法
公开(公告)号：JP2010024089A
公开(公告)日：2010-02-04
申请号：JP2008186976
申请日：2008-07-18
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： UEMATSU KOJI , MORISHITA MASANORI , TANAKA HARUKO , FUJIWARA SHINSUKE , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To provide a growth apparatus and a growth method of a group III nitride crystal capable of stably growing a high quality group III nitride crystal. SOLUTION: The growth apparatus of the group III nitride crystal by a liquid phase method comprises a reaction vessel 120 for housing a solvent 132 containing a group III metal and an alkaline metal, a pressure vessel 110 for housing the reaction vessel 120, a nitrogen-containing gas supplying device 180 for supplying the nitrogen-containing gas to the reaction vessel 120 and the pressure vessel 110, first piping 122 for introducing the nitrogen-containing gas from the nitrogen-containing gas supplying device 180 to the pressure vessel 110 and second piping 124 for introducing the nitrogen-containing gas from a first part 122s in mid-way of the first piping 122 to the reaction vessel 120. At a growing step of the group III nitride crystal, the inner pressure of the reaction vessel and the inner pressure of the pressure vessel are controlled by the nitrogen-containing gas by supplying the nitrogen-containing gas of the amount consumed by growth of the group III nitride crystal by using a pressure controlling vessel 116p and a flow rate controlling vessel 122f. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够稳定生长高质量III族氮化物晶体的III族氮化物晶体的生长装置和生长方法。解决方案：通过液相法的III族氮化物晶体的生长装置包括用于容纳含有III族金属和碱金属的溶剂132的反应容器120，用于容纳反应容器120的压力容器110，用于将含氮气体供给到反应容器120和压力容器110的含氮气体供给装置180，用于将含氮气体从含氮气体供给装置180导入压力容器110的第一配管122 以及用于将含氮气体从第一管道122的中途的第一部分122s引入反应容器120的第二管道124.在III族氮化物晶体的生长步骤中，反应容器的内部压力和通过使用含有III族氮化物晶体生长消耗的量的含氮气体，通过含氮气体来控制压力容器的内部压力 g压力控制容器116p和流量控制容器122f。版权所有（C）2010，JPO＆INPIT

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