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1. 发明专利

JP2010024125A Method for growing group iii nitride crystal 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2010024125A
公开(公告)日：2010-02-04
申请号：JP2008191203
申请日：2008-07-24
申请人： Osaka Univ , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 国立大学法人大阪大学
发明人： FUJIWARA SHINSUKE , HIROTA TATSU , YOSHIDA HIROAKI , UEMATSU KOJI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, wherein the workability is improved in a flux method as a liquid phase method.
SOLUTION: The method for growing a group III nitride crystal is carried out by a liquid phase method, including a step of preparing a base substrate 1 and a step of growing a group III nitride crystal 10 on the major surface 1m of the base substrate 1 by bringing the major surface 1m into contact with a solution prepared by dissolving a nitrogen-containing gas 5 into a solvent 3 containing a group III metal and an alkali metal, wherein the ratio of the molar number of the alkali metal to the total molar number of the group III metal and the alkali metal is 0.001 to
摘要翻译：待解决的问题：提供一种用于生长III族氮化物晶体的方法，其中在作为液相法的通量法中可加工性得到改善。解决方案：用于生长III族氮化物晶体的方法通过液相法进行，包括制备基底基板1的步骤和在第一III族氮化物晶体的主表面1m上生长III族氮化物晶体10的步骤通过使主表面1m与通过将含氮气体5溶解在含有III族金属和碱金属的溶剂3中而制备的溶液接触，其中碱金属摩尔数与 III族金属和碱金属的总摩尔数为0.001〜0.2。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009091183A Method for growing group iii nitride crystal 有权
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2009091183A
公开(公告)日：2009-04-30
申请号：JP2007262114
申请日：2007-10-05
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： UEMATSU KOJI , HIROTA TATSU , YOSHIDA HIROAKI , FUJIWARA SHINSUKE , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, capable of growing a large crystal by a liquid phase process.
SOLUTION: The method for growing a group III nitride crystal 10 is a process for growing the crystal by a liquid phase process comprises: a step of preparing a group III nitride crystal substrate 1 having the same chemical composition as the group III nitride crystal 10 and a thickness of ≥0.5 mm and; a step of bringing a solution, which is obtained by dissolving a nitrogen-containing gas 5 into a solvent 3 containing a group III metal and an alkali metal, into contact with a major surface 1m of the group III nitride crystal substrate 1, to grow the group III nitride crystal 10 on the major surface 1m.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种生长能够通过液相法生长大晶体的III族氮化物晶体的方法。解决方案：用于生长III族氮化物晶体10的方法是通过液相法生长晶体的工艺，包括：制备具有与III族氮化物相同的化学组成的III族氮化物晶体衬底1的步骤晶体10，厚度≥0.5mm; 通过将含氮气体5溶解在含有III族金属和碱金属的溶剂3中而与III族氮化物晶体基板1的主面1m接触而获得的溶液的生长步骤主表面1m上的III族氮化物晶体10。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009051686A Method for growing group iii nitride crystal 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2009051686A
公开(公告)日：2009-03-12
申请号：JP2007218530
申请日：2007-08-24
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： YOSHIDA HIROAKI , FUJIWARA SHINSUKE , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/12
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a Group III nitride single crystal capable of reducing its dislocation density.
SOLUTION: The method for growing a Group III nitride crystal is for growing a first Group III nitride crystal 20 on the main surface 10m of a base substrate 10 using a melt containing a Group III metal element and an alkali metal element by a liquid phase process. The base substrate 10 contains a Group III nitride crystal layer 10a at least at the main surface 10m side and the normal 10mv of the main surface 10m of the base substrate 10 has a tilt angle to direction 10cv of the Group III nitride crystal layer 10a of 1-10°. When the first Group III nitride crystal 20 grows, at least a part of dislocation remaining in the first Group III nitride crystal 20 is transferred to {0001} plane 20c substantially in a parallel direction and discharged to the outer periphery of the first Group III nitride crystal 20.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够降低其位错密度的III族氮化物单晶的生长方法。解决方案：用于生长III族氮化物晶体的方法是使用含有III族金属元素和碱金属元素的熔体在基底10的主表面10m上生长第一III族氮化物晶体20 液相法。基底基板10至少在主表面10m侧包含III族氮化物晶体层10a，并且基底基板10的主表面10m的正常10mv具有III族氮化物晶体的<0001>方向10cv的倾斜角层10a为1-10°。当第一III族氮化物晶体20生长时，残留在第一III族氮化物晶体20中的位错的至少一部分基本上沿平行方向被转移到ä0001}平面20c并且被排放到第一III族氮化物晶体的外周 20.版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2009029673A Group iii nitride crystal and method for growing the same 审中-公开
标题翻译：第III组氮化物晶体及其生长方法
公开(公告)号：JP2009029673A
公开(公告)日：2009-02-12
申请号：JP2007196307
申请日：2007-07-27
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , HIROTA TATSU , UEMATSU KOJI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/04 , C30B19/12
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal in which a large crystal can be grown by a liquid phase process. SOLUTION: The method for growing the group III nitride crystal 10 by a liquid phase process comprises the steps of: preparing a substrate 1 having a flat principal plane 1m, wherein the substrate includes a group III nitride seed crystal 1a having the same chemical composition as the group III nitride crystal 10 at least at the side of the principal plane 1m and the average density of the threading dislocation in the principal plane 1m is 5×10 6 cm -2 or less; and bringing the principal plane 1m of the substrate 1 into contact with a solution obtained by dissolving a nitrogen-containing gas 5 in a solvent 3 containing a group III metal and an alkali metal to grow the group III nitride crystal 10 on the principal plane 1m. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种生长其中可以通过液相法生长大晶体的III族氮化物晶体的方法。解决方案：通过液相法生长III族氮化物晶体10的方法包括以下步骤：制备具有平面主平面1m的衬底1，其中衬底包括具有相同的III族氮化物晶体1a 至少在主平面1m侧的III族氮化物晶体10的化学组成和主面1m中的穿透位错的平均密度为5×10 6 或更少; 并使基板1的主面1m与通过将含氮气体5溶解在含有III族金属和碱金属的溶剂3中而获得的溶液接触，以在主平面1m上生长III族氮化物晶体10 。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2005306646A Thermal decomsition boron nitride crucible and single crystal growth method using the same 有权
标题翻译：使用相同的热分解硼砂可溶性和单晶生长方法
公开(公告)号：JP2005306646A
公开(公告)日：2005-11-04
申请号：JP2004124471
申请日：2004-04-20
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： YOSHIDA HIROAKI
IPC分类号： C30B11/00 , C30B27/00 , C30B29/42
摘要： PROBLEM TO BE SOLVED: To provide a vertical thermal decomsition boron nitride crucible in which a compound semiconductor single crystal can be grown in high yield while suppressing a polycrystallization.
SOLUTION: The vertical thermal decomsition boron nitride crucible (11) for growing a compound semiconductor single crystal is characterized in that: the main body has a seed crystal housing part (11a) in its bottom; the thermal decomsition boron nitride of the crucible shows the X-ray diffraction intensity ratio I(hBN)/[I(hBN)+I(tBN)] in the range of 0 to 0.3 or 0.7 to 1.0, wherein I(hBN) is the X-ray diffraction intensity from the c-plane of the hexagonal crystal included in the thermal decomsition boron nitride and I(tBN) is the X-ray diffraction intensity from the c-plane in a disturbed layer structure having a larger plane distance than that of the hexagonal crystal; and at least a desired region of the inner face of the crucible is coated with a boron oxide film (2).
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种垂直热分解氮化硼坩埚，其中化合物半导体单晶可以以高产率生长，同时抑制多晶化。解决方案：用于生长化合物半导体单晶的垂直热分解氮化硼坩埚（11）的特征在于：主体在其底部具有晶种壳体部分（11a）坩埚的热分解氮化硼在0〜0.3或0.7〜1.0的范围内显示X射线衍射强度比I（hBN）/ [I（hBN）+ I（tBN）]，其中I（hBN）为包含在热分解氮化硼中的六方晶体的c面的X射线衍射强度和I（tBN）是具有比平面距离大的扰动层结构中的c面的X射线衍射强度六角晶体的; 并且坩埚的内表面的至少所需区域涂覆有氧化硼膜（2）。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2010024124A Method for growing group iii nitride crystal 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2010024124A
公开(公告)日：2010-02-04
申请号：JP2008191128
申请日：2008-07-24
申请人： Osaka Univ , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 国立大学法人大阪大学
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, in which an increase in dislocation is suppressed during growing a crystal by a liquid phase method.
SOLUTION: The method for growing a group III nitride crystal includes a step of preparing a base substrate 1 and a step of growing a group III nitride crystal 10 on the major surface of the base substrate 1 by bringing the major surface 1m into contact with a solution prepared by dissolving a nitrogen-containing gas 5 into a solvent 3 containing a group III metal, an alkali metal and a metal that reduces the crystal growth rate of the group III nitride crystal. The crystal growth rate of the group III nitride crystal is less than the critical growth rate of the crystal where dislocation of the group III nitride crystal starts to increase. The alkali metal contains at least either Na or Li. The metal that decreases the crystal growth rate of the group III nitride crystal contains at least one metal selected from a group consisting of transition metals, Ge, Sn, Pb and Bi.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：待解决的问题：提供一种生长III族氮化物晶体的方法，其中通过液相法在晶体生长期间抑制位错增加。解决方案：用于生长III族氮化物晶体的方法包括制备基底基板1的步骤和通过使主表面1m进入基底基板1的主表面上生长III族氮化物晶体10的步骤与通过将含氮气体5溶解在含有III族金属，碱金属和金属的溶剂3中制备的溶液接触，所述III族金属，碱金属和金属降低III族氮化物晶体的晶体生长速率。 III族氮化物晶体的晶体生长速率小于III族氮化物晶体的位错开始增加的晶体的临界生长速率。碱金属至少含有Na或Li。降低III族氮化物晶体的晶体生长速度的金属含有选自过渡金属，Ge，Sn，Pb和Bi中的至少一种金属。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009029639A Method for manufacturing group iii nitride crystal, group iii nitride crystal substrate and group iii nitride semiconductor device 有权
标题翻译：制备III类氮化物晶体，III族氮化物晶体基板和III族氮化物半导体器件的方法
公开(公告)号：JP2009029639A
公开(公告)日：2009-02-12
申请号：JP2007182879
申请日：2007-07-12
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIROTA TATSU , KAWASE TOMOHIRO , YOSHIDA HIROAKI , UEMATSU KOJI
IPC分类号： C30B29/38 , C23C16/01 , C30B9/00 , C30B25/18 , H01L31/10 , H01L33/32 , H01S5/02
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride crystal, a group III nitride crystal substrate and a group III nitride semiconductor device with low dislocation density and low impurity concentration. SOLUTION: The method for manufacturing the group III nitride crystal includes steps of: growing a first group III nitride crystal 10 by a liquid phase method using a liquid 2 for crystal growth, the liquid containing a group III element and a solvent containing at least one kind of metal element; heat-treating the first group III nitride crystal 10 in a liquid 4 for crystal treatment containing at least one kind of metal element; and growing a second group III nitride crystal 20 by a vapor phase method on the heat-treated first group III nitride crystal 10. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有低位错密度和低杂质浓度的III族氮化物晶体，III族氮化物晶体基板和III族氮化物半导体器件的制造方法。解决方案：用于制造III族氮化物晶体的方法包括以下步骤：通过液相法使用液晶2生长第一III族氮化物晶体，用于晶体生长，含有III族元素的液体和含有至少一种金属元素; 在包含至少一种金属元素的晶体处理用液体4中热处理第一III族氮化物晶体10; 并且通过气相法在经热处理的第一III族氮化物晶体10上生长第二III族氮化物晶体20.版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2006327895A Method for manufacturing compound semiconductor single crystal, vertical pbn vessel for the same, and method for selecting vessel 审中-公开
标题翻译：用于制造化合物半导体单晶，其相同的垂直PBN容器的方法和用于选择容器的方法
公开(公告)号：JP2006327895A
公开(公告)日：2006-12-07
申请号：JP2005155735
申请日：2005-05-27
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： YOSHIDA HIROAKI
IPC分类号： C30B11/00 , C30B29/42
摘要： PROBLEM TO BE SOLVED: To provide a technology by which a compound semiconductor single crystal can be manufactured in a stable and high yield.
SOLUTION: A vertical vessel 1b, made of pyrolytic boron nitride (PBN) and used for manufacturing the compound semiconductor single crystal, has an inner wall with which a droplet 2a of molten boron oxide forms a contact angle within a range of ≥80 and
摘要翻译：要解决的问题：提供可以以稳定和高产率制造化合物半导体单晶的技术。解决方案：由热解氮化硼（PBN）制成并用于制造化合物半导体单晶的垂直容器1b具有内壁，熔融氧化硼的液滴2a通过该内壁形成接触角在≥ 80和<140°。化合物半导体单晶通过使用该容器的垂直布里奇曼法通过生长GaAs单晶或InP单晶来制造。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2004026584A METHOD OF MANUFACTURING GaAs SINGLE CRYSTAL AND GaAs SINGLE CRYSTAL 审中-公开
公开(公告)号：JP2004026584A
公开(公告)日：2004-01-29
申请号：JP2002186515
申请日：2002-06-26
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： YOSHIDA HIROAKI
IPC分类号： C30B29/42 , C30B33/02
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a GaAs single crystal by which the heat treating time is reduced and the productivity is improved, and a method of manufacturing a GaAs substrate.
SOLUTION: The GaAs single crystal obtained by growing a GaAs seed crystal by a vertical boat method is heat treated at ≥800°C to ≤1130°C for ≥10 min to

10. 发明专利

JP2012116741A Group iii nitride composite substrate 审中-公开
标题翻译：第III组氮化物复合基板
公开(公告)号：JP2012116741A
公开(公告)日：2012-06-21
申请号：JP2011210704
申请日：2011-09-27
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SATO KAZUNARI , YOSHIDA HIROAKI , YAMAMOTO YOSHIYUKI , YAGO AKIHIRO , MATSUBARA HIDEKI
IPC分类号： C30B29/38 , C30B25/18 , H01L21/02 , H01L21/205 , H01L27/12
CPC分类号： H01L21/76254 , H01L21/0242 , H01L21/02488 , H01L21/0254
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride composite substrate in which the bonding strength between a support substrate and a group III nitride layer is high.SOLUTION: The group III nitride composite substrate 1 includes a support substrate 10 composed of sapphire and the like, an oxide film 20 formed on the support substrate 10, and a group III nitride layer 30a formed on the oxide film 20. Here, the oxide film 20 can be any film selected from the group consisting of a TiOfilm and an SrTiOfilm, and can be added with at least one element selected from the group consisting of Nb and La as an impurity.
摘要翻译：要解决的问题：提供其中支撑基板和III族氮化物层之间的结合强度高的III族氮化物复合基板。解决方案：III族氮化物复合衬底1包括由蓝宝石等构成的支撑衬底10，形成在支撑衬底10上的氧化物膜20和形成在氧化膜20上的III族氮化物层30a。，氧化物膜20可以是选自TiO 2 膜和SrTiO > 3”膜的任何膜，以及可以添加至少一种选自Nb和La作为杂质的元素。版权所有（C）2012，JPO＆INPIT

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