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1. 发明专利

JP2009073704A Method for growing group iii nitride crystal 有权
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2009073704A
公开(公告)日：2009-04-09
申请号：JP2007245838
申请日：2007-09-21
申请人： Osaka Univ , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 国立大学法人大阪大学
发明人： YOSHIDA HIROAKI , FUJIWARA SHINSUKE , HIROTA TATSU , UEMATSU KOJI , TANAKA HARUKO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/04 , C30B19/12
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal having a low dislocation density with a non-polar plane as a main plane. SOLUTION: The method for growing the group III nitride crystal includes the step of preparing a base substrate 10 where the base substrate 10 contains the group III nitride crystal 10a having one main surface 10m and the main surface 10m is tilted at the angle of 0.1°-10° toward the ä1-100} surface 10c of the group III nitride crystal, and further includes the step of epitaxially growing the first group III nitride crystal 20 on the main surface 10m of the base substrate 10 by contacting a solution having a nitrogen gas 5 dissolved in a solvent 3 containing the group III metal and an alkaline metal on the main surface of 10m of the base substrate 10. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种以非极性平面作为主平面来生长具有低位错密度的III族氮化物晶体的方法。解决方案：用于生长III族氮化物晶体的方法包括制备基底10的步骤，其中基底10含有具有一个主表面10m并且主表面10m倾斜角度的III族氮化物晶体10a 对于III族氮化物晶体的ä1-100}表面10c为0.1°-10°，并且还包括通过使基底衬底10的主表面10m上的第一III族氮化物晶体20的主表面10m上的溶液具有溶解在含有III族金属的溶剂3中的氮气5和在基底10的10m主表面上的碱金属。（C）2009，JPO＆INPIT

2. 发明专利

JP2010024124A Method for growing group iii nitride crystal 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2010024124A
公开(公告)日：2010-02-04
申请号：JP2008191128
申请日：2008-07-24
申请人： Osaka Univ , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 国立大学法人大阪大学
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, in which an increase in dislocation is suppressed during growing a crystal by a liquid phase method.
SOLUTION: The method for growing a group III nitride crystal includes a step of preparing a base substrate 1 and a step of growing a group III nitride crystal 10 on the major surface of the base substrate 1 by bringing the major surface 1m into contact with a solution prepared by dissolving a nitrogen-containing gas 5 into a solvent 3 containing a group III metal, an alkali metal and a metal that reduces the crystal growth rate of the group III nitride crystal. The crystal growth rate of the group III nitride crystal is less than the critical growth rate of the crystal where dislocation of the group III nitride crystal starts to increase. The alkali metal contains at least either Na or Li. The metal that decreases the crystal growth rate of the group III nitride crystal contains at least one metal selected from a group consisting of transition metals, Ge, Sn, Pb and Bi.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：待解决的问题：提供一种生长III族氮化物晶体的方法，其中通过液相法在晶体生长期间抑制位错增加。解决方案：用于生长III族氮化物晶体的方法包括制备基底基板1的步骤和通过使主表面1m进入基底基板1的主表面上生长III族氮化物晶体10的步骤与通过将含氮气体5溶解在含有III族金属，碱金属和金属的溶剂3中制备的溶液接触，所述III族金属，碱金属和金属降低III族氮化物晶体的晶体生长速率。 III族氮化物晶体的晶体生长速率小于III族氮化物晶体的位错开始增加的晶体的临界生长速率。碱金属至少含有Na或Li。降低III族氮化物晶体的晶体生长速度的金属含有选自过渡金属，Ge，Sn，Pb和Bi中的至少一种金属。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2010024125A Method for growing group iii nitride crystal 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2010024125A
公开(公告)日：2010-02-04
申请号：JP2008191203
申请日：2008-07-24
申请人： Osaka Univ , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 国立大学法人大阪大学
发明人： FUJIWARA SHINSUKE , HIROTA TATSU , YOSHIDA HIROAKI , UEMATSU KOJI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, wherein the workability is improved in a flux method as a liquid phase method.
SOLUTION: The method for growing a group III nitride crystal is carried out by a liquid phase method, including a step of preparing a base substrate 1 and a step of growing a group III nitride crystal 10 on the major surface 1m of the base substrate 1 by bringing the major surface 1m into contact with a solution prepared by dissolving a nitrogen-containing gas 5 into a solvent 3 containing a group III metal and an alkali metal, wherein the ratio of the molar number of the alkali metal to the total molar number of the group III metal and the alkali metal is 0.001 to
摘要翻译：待解决的问题：提供一种用于生长III族氮化物晶体的方法，其中在作为液相法的通量法中可加工性得到改善。解决方案：用于生长III族氮化物晶体的方法通过液相法进行，包括制备基底基板1的步骤和在第一III族氮化物晶体的主表面1m上生长III族氮化物晶体10的步骤通过使主表面1m与通过将含氮气体5溶解在含有III族金属和碱金属的溶剂3中而制备的溶液接触，其中碱金属摩尔数与 III族金属和碱金属的总摩尔数为0.001〜0.2。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2011001211A Method for growing group iii nitride crystal 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2011001211A
公开(公告)日：2011-01-06
申请号：JP2009144353
申请日：2009-06-17
申请人： Osaka Univ , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 国立大学法人大阪大学
发明人： MORISHITA MASANORI , FUJIWARA SHINSUKE , MORI YUSUKE , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/12
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal which reduces the dislocation density of the whole of the crystal to be grown.SOLUTION: In the method for growing a group III nitride crystal 10, where a solution 6, obtained by dissolving a nitrogen raw material gas 5 into a melt 3 including a group III metal and an alkali metal, is brought into contact with a group III nitride seed crystal 1, thus a group III nitride crystal 10 is grown from the group III nitride seed crystal 1, the group III nitride seed crystal 1 has an upper face as a (000-1)N atom surface 1n, and a lower face arranged so as to be brought into contact with the inside surface 23i of a crystal growth vessel 23, and the group III nitride crystal 10 is grown substantially on the side surface 1s of the group III nitride seed crystal 1 to a direction parallel to the (000-1)N atom surfaces 1n, 10n.
摘要翻译：要解决的问题：提供一种生长III族氮化物晶体的方法，其降低待生长的晶体的位错密度。解决方案：在用于生长III族氮化物晶体10的方法中，其中溶液6，通过将氮原料气体5溶解在包含III族金属和碱金属的熔融物3中而与III族氮化物晶种1接触而获得，从III族氮化物晶体生长III族氮化物晶体10 晶种1中，III族氮化物晶种1具有作为（000-1）N原子表面1n的上表面，并且配置成与晶体生长容器23的内表面23i接触的下表面，并且III族氮化物晶体10基本上在III族氮化物晶种1的侧表面1s上生长至与（000-1）N原子表面1n，10n平行的方向。

5. 发明专利

JP2009062229A Group iii nitride crystal and method for growing the same 有权
标题翻译：第III组氮化物晶体及其生长方法
公开(公告)号：JP2009062229A
公开(公告)日：2009-03-26
申请号：JP2007231708
申请日：2007-09-06
申请人： Osaka Univ , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 国立大学法人大阪大学
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , KAWASE TOMOHIRO , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, by which the group III nitride crystal having a large size and a low dislocation density can be grown by a liquid phase method.
SOLUTION: The method for growing the group III nitride crystal includes a process for preparing a substrate 1 which contains a group III nitride seed crystal 1a having the same chemical composition as that of the group III nitride crystal 10 and a flat main surface 1m on one main surface side, and a process for growing the group III nitride crystal 10 on the main surface 1m by bringing a solution, obtained by dissolving a nitrogen-containing gas into a solvent 3 containing a group III metal, an alkali metal and a group VI element-containing substance, into contact with the main surface 1m of the substrate 1. The group III nitride crystal is grown in such states that the crystal growth surface 10g of the group III nitride crystal 10 includes a plurality of macrosteps 10gp, 10gq, each macrostep includes a step surface 10gs and a terrace surface 10gt, and the terrace surface is flat.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于生长III族氮化物晶体的方法，通过该方法可以通过液相法生长具有大尺寸和低位错密度的III族氮化物晶体。解决方案：用于生长III族氮化物晶体的方法包括制备基板1的方法，该基板1包含具有与III族氮化物晶体10相同的化学组成的III族氮化物晶种1a和平坦的主表面在一个主表面侧具有1μm，并且通过将含氮气体溶解到含有III族金属的溶剂3，碱金属和碱金属中而获得的溶液，使主表面1m上的III族氮化物晶体10生长含有Ⅵ元素的物质与基板1的主表面1m接触。该III族氮化物晶体以这样的状态生长，即III族氮化物晶体10的晶体生长表面10g包括多个宏步骤10gp， 10gq，每个宏步骤包括台阶表面10gs和平台表面10gt，并且平台表面是平坦的。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2014040333A Method for producing silicon carbide substrate 有权
标题翻译：生产碳化硅基材的方法
公开(公告)号：JP2014040333A
公开(公告)日：2014-03-06
申请号：JP2012182313
申请日：2012-08-21
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NISHIGUCHI TARO , HARADA MAKOTO , FUJIWARA SHINSUKE
IPC分类号： C30B29/36 , C30B23/06
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide substrate, which can suppress occurrence of a discharge during crystal growth and produce a silicon carbide crystal with little dislocation.SOLUTION: The method for producing a silicon carbide substrate comprises following steps. A growth vessel 10 in which a silicon carbide raw material 8 and a seed substrate 1 are disposed is provided. A temperature of the growth vessel 10 is raised to a temperature within a range of growth temperature of a silicon carbide crystal by means of a resistance heater 5. The temperature of the growth vessel 10 is kept within the range of the growth temperature of the silicon carbide crystal to grow the silicon carbide crystal on the seed substrate 1. A pressure in the step for raising the temperature of the growth vessel is higher than that in the step for growing the silicon carbide crystal. In the step for raising the temperature of the growth vessel, the growth vessel 10 contains a gas consisting of an element having the atomic number larger than that of helium. The concentration of helium in the step for raising the temperature of the growth vessel is lower than the concentration of helium in the step for growing the silicon carbide crystal.
摘要翻译：要解决的问题：提供一种制造碳化硅衬底的方法，其可以抑制晶体生长期间的放电发生，并产生几乎没有位错的碳化硅晶体。解决方案：制造碳化硅衬底的方法包括以下步骤。设置有碳化硅原料8和种子基板1的生长槽10。通过电阻加热器5将生长容器10的温度升高到碳化硅晶体的生长温度范围内的温度。生长容器10的温度保持在硅的生长温度的范围内碳化物晶体生长在种子基底1上的碳化硅晶体。用于提高生长容器的温度的步骤中的压力高于用于生长碳化硅晶体的步骤中的压力。在升高生长容器的温度的步骤中，生长容器10含有由原子序数大于氦的元素组成的气体。用于提高生长容器的温度的步骤中的氦浓度低于用于生长碳化硅晶体的步骤中的氦浓度。

7. 发明专利

JP2013129571A Semiconductor substrate 有权
标题翻译：半导体基板
公开(公告)号：JP2013129571A
公开(公告)日：2013-07-04
申请号：JP2011280863
申请日：2011-12-22
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NISHIGUCHI TARO , HARADA MAKOTO , FUJIWARA SHINSUKE
IPC分类号： C30B29/36 , H01L21/336 , H01L29/12 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor substrate which can improve a yield of a semiconductor device.SOLUTION: This semiconductor substrate 10 has a main surface 1 and comprises single crystal silicon carbide. The main surface 1 includes a central region 3 which is a region excluding the region within 5 mm from the outer periphery 2. When the central region 3 is divided into square regions 4 with a side of 1 mm, density of dislocation, where Burgers vector is parallel to direction, is ≤1×10cmin any square region 4.
摘要翻译：要解决的问题：提供可以提高半导体器件的产率的碳化硅半导体衬底。解决方案：该半导体衬底10具有主表面1并且包括单晶碳化硅。主表面1包括中心区域3，该中心区域3是除了外周边5mm以内的区域之外的区域。当中心区域3被划分为具有1mm侧面的正方形区域4时，位错密度，其中汉堡矢量平行于<0001>方向，≤1×10cmin任意方形区域4。

8. 发明专利

JP2013082628A Methods for producing group iii nitride crystal, group iii nitride crystal substrate, and semiconductor device 审中-公开
标题翻译：生产III族氮化物晶体，III族氮化物晶体基板和半导体器件的方法
公开(公告)号：JP2013082628A
公开(公告)日：2013-05-09
申请号：JP2013024385
申请日：2013-02-12
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUJIWARA SHINSUKE
IPC分类号： C30B29/38 , C30B25/20
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a group III nitride crystal having a principal plane whose plane orientation with respect to an arbitrarily specified {hkil} plane except the {0001} plane has a small variation.SOLUTION: The method for producing a group III nitride crystal includes: preparing a plurality of crystal pieces 10, in each of which plane orientation deviates within 0.5° or less from an arbitrarily specified {hkil} plane except the {0001} plane in each point arranged at a pitch of 1 mm in the principal plane 10 m of the crystal piece 10; arranging the plurality of crystal pieces 10 so that the plane orientation deviates within 0.5° or less from the {hkil} plane, in each point arranged at a pitch of 1 mm in the entire surface 10a of the principal plane 10m of each of the plurality of crystal pieces 10 and so that at least part of the principal plane 10m of the crystal piece 10 is exposed; and growing a second group III nitride crystal 20 on the exposed part of the principal plane 10m of each of the plurality of crystal pieces 10.
摘要翻译：要解决的问题：提供一种具有主面的III族氮化物晶体的制造方法，该主面的平面取向相对于除了ä0001}面之外的任意规定的äkkil面具有小的变化。解决方案：用于制造III族氮化物晶体的方法包括：制备多个晶片10，每个晶片10在每个平面取向偏离任何规定的äkkil}平面内在0.5°以内，除了每个在晶片10的主平面10μm的间距为1mm的点; 在多个晶片10的主平面10m的整个表面10a中的每一点以1mm的间距布置多个晶片10，使得平面取向从ähkil}平面偏离0.5°或更小。水晶片10，使得结晶片10的主平面10m的至少一部分露出; 并且在多个晶片10的主平面10m的暴露部分上生长第二III族氮化物晶体20.版权所有：（C）2013，JPO＆INPIT

9. 发明专利

JP2013062263A Silicon carbide substrate manufacturing method 审中-公开
标题翻译：碳化硅基板制造方法
公开(公告)号：JP2013062263A
公开(公告)日：2013-04-04
申请号：JP2010006777
申请日：2010-01-15
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NISHIGUCHI TARO , SASAKI MAKOTO , HARADA MAKOTO , FUJIWARA SHINSUKE , NAMIKAWA YASUO
IPC分类号： H01L21/02 , H01L21/336 , H01L29/12 , H01L29/78
CPC分类号： H01L29/7802 , C30B29/36 , C30B33/06 , H01L21/02378 , H01L21/02529 , H01L21/02631 , H01L29/1608 , H01L29/66068
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide substrate manufacturing method which enables reduction of manufacturing cost of a semiconductor device using a silicon carbide substrate.SOLUTION: The silicon carbide substrate manufacturing method comprises the steps of: preparing an SiC substrate 20 composed of a single crystal silicon carbide; arranging a silicon carbide source 10 so as to face one principal surface 20B of the SiC substrate 20; and forming a base layer composed of a silicon carbide so as to contact the one principal surface 20B of the SiC substrate 20 by heating the silicon carbide source 10. In the step of forming the base layer, the silicon carbide source 10 is heated in a nitrogen-containing atmosphere.
摘要翻译：要解决的问题：提供一种能够降低使用碳化硅衬底的半导体器件的制造成本的碳化硅衬底制造方法。解决方案：碳化硅衬底制造方法包括以下步骤：制备由单晶碳化硅构成的SiC衬底20; 排列碳化硅源10以面对SiC衬底20的一个主表面20B; 以及通过加热碳化硅源10形成由碳化硅构成的基底层，以与SiC衬底20的一个主表面20B接触。在形成基底层的步骤中，将碳化硅源10加热至含氮气氛。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2013053049A Silicon carbide substrate, silicon carbide substrate manufacturing method, and semiconductor device manufacturing method 审中-公开
标题翻译：硅碳化硅基板，碳化硅基板制造方法和半导体器件制造方法
公开(公告)号：JP2013053049A
公开(公告)日：2013-03-21
申请号：JP2011193463
申请日：2011-09-06
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUJIWARA SHINSUKE , HARADA MAKOTO
IPC分类号： C30B29/36
CPC分类号： H01L29/1608 , H01L21/02002 , H01L21/02439 , H01L21/02494 , H01L21/02516 , H01L21/02529 , H01L21/02609 , H01L21/02658 , H01L21/046 , H01L21/049 , H01L29/045 , H01L29/66068 , H01L29/7802
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide substrate in which a micropipe density is low and a micropipe having a great cross-sectional area is not present.SOLUTION: In the silicon carbide substrate, an edge region 60 has a width of 5 mm. A valid region 70 is surrounded by the edge region 60, and has an area greater than or equal to 100 cm. In the valid region 70, a micropipe having a cross-sectional area exceeding 1 μmis not present. The valid region 70 includes a plurality of high-quality regions 71 occupying 70% or more of the valid region. Each of the plurality of the high-quality regions 71 has a square shape, an area greater than or equal to 1 cm, and a micropipe density less than or equal to 1 micropipe per 1 cm.
摘要翻译：要解决的问题：提供一种其中微管密度低的碳化硅衬底和不具有大横截面面积的微管。解决方案：在碳化硅衬底中，边缘区域60具有5mm的宽度。有效区域70由边缘区域60包围，并且具有大于或等于100cm的面积。SP SP =“POST”> 2 。在有效区域70中，不存在横截面积超过1μm的微管 2 。有效区域70包括占有有效区域的70％以上的多个高质量区域71。多个高质量区域71中的每一个具有正方形形状，大于或等于1cm的面积，以及小于或等于1个微管的微管密度每1厘米 2 。版权所有（C）2013，JPO＆INPIT

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