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1. 发明专利

JPH11274883A Piezoelectric compound substrate and surface acoustic wave element 失效
标题翻译：压电复合基片和表面声波元件
公开(公告)号：JPH11274883A
公开(公告)日：1999-10-08
申请号：JP7226798
申请日：1998-03-20
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： KAMIMURA TOMOYOSHI , NAKAHATA HIDEAKI , HIGAKI KENJIRO , FUJII SATORU , TOYODA HARUHISA , YAGO AKIHIRO , SHIKADA SHINICHI
IPC分类号： H01L41/09 , H03H9/145
摘要： PROBLEM TO BE SOLVED: To provide a surface acoustic wave(SAW) element having the piezoelectric film of high quality and the electrode of the, desired line width and having satisfactory frequency temperature characteristics and a piezoelectric compound substrate suitable for providing this element.
SOLUTION: A hard film 12, piezoelectric film 13 and insulator film 14 are successively formed on a single crystal Si wafer 11, and a comb line electrode 15 is formed on that insulator film 14 and further, an SiO
2 film 16 is formed on them. The hard film 12 is composed of any one of diamond, boron nitride or sapphire. The piezoelectric film 13 is composed of any one of ZnO, LiTaO
2 , LiNbO
3 and AlN. The insulator film is composed of any one of SiN, SiO
2 N
y , and Al
2 O
3 .
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：提供一种具有高质量的压电膜的声表面波（SAW）元件和期望的线宽度的电极并且具有令人满意的频率温度特性和适于提供该元件的压电复合衬底。解决方案：在单晶Si晶片11上依次形成硬膜12，压电膜13和绝缘膜14，在该绝缘膜14上形成梳状线电极15，并且在其上形成SiO 2膜16。硬膜12由金刚石，氮化硼或蓝宝石中的任何一种构成。压电膜13由ZnO，LiTaO 2，LiNbO 3和AlN中的任一种构成。绝缘体膜由SiN，SiO 2 Ny和Al 2 O 3中的任一种构成。

2. 发明专利

JP2005056924A Process for producing multilayer substrate 审中-公开
标题翻译：生产多层基板的方法
公开(公告)号：JP2005056924A
公开(公告)日：2005-03-03
申请号：JP2003206239
申请日：2003-08-06
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUJII SATORU , SASAKI KAZUTAKA
IPC分类号： H05K3/46
摘要： PROBLEM TO BE SOLVED: To provide a process for producing a multilayer substrate with high accuracy and reliability.
SOLUTION: A through hole 22 is made through a substrate 21 by laser beam machining, Cu 23 is deposited on the substrate 21 by electroless plating, a via hole 24 is formed by filling the through hole 22 with deposition by plating, an electric circuit pattern 29 being connected with the via hole 24 is formed on the Cu 23 by photoetching, and a plurality of wafers 20 on which the electric circuit is formed are laid in layers and thermo-compression bonded.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供高精度和可靠性的多层基板的制造方法。解决方案：通过激光束加工通过基板21形成通孔22，通过无电解电镀将Cu 23沉积在基板21上，通过电镀沉积填充通孔22形成通孔24，通过光刻在Cu 23上形成与通路孔24连接的电路图案29，并且将形成有电路的多个晶片20层叠并热压接合。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2005150408A Light source apparatus and package for mounting light emitting element 审中-公开
标题翻译：光源装置和安装灯发光元件的包装
公开(公告)号：JP2005150408A
公开(公告)日：2005-06-09
申请号：JP2003386088
申请日：2003-11-17
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SASAKI KAZUTAKA , FUJII SATORU
IPC分类号： H01L33/60 , H01L33/64 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a package for mounting a light emitting element which is excellent in heat dissipation characteristics and in matching property of a heat expansion coefficient with the light emitting element, even if the light emitting element is driven with a high output and mounting density of the light emitting element is raised and which is capable of stably operating the light emitting element over a long period of time, and to provide a light source apparatus mounting the light emitting element on the package.
SOLUTION: The package for mounting a light emitting element includes a member having a concave optical reflecting surface and a metallized ceramic substrate with which the member is joined. The light source apparatus mounts a light emitting element on the package for mounting a light emitting element.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种用于安装散热特性优异和热膨胀系数与发光元件的匹配性能的发光元件的封装，即使发光元件被驱动提高发光元件的高输出和安装密度，并且能够长时间稳定地操作发光元件，并且提供将发光元件安装在封装上的光源装置。解决方案：用于安装发光元件的封装包括具有凹光学反射表面的元件和与该元件连接的金属化陶瓷基底。光源装置将发光元件安装在用于安装发光元件的封装上。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004039931A Method and device for cutting substrate 有权
公开(公告)号：JP2004039931A
公开(公告)日：2004-02-05
申请号：JP2002196371
申请日：2002-07-04
申请人： Daitron Technology Co Ltd , Sumitomo Electric Ind Ltd , ダイトロンテクノロジー株式会社 , 住友電気工業株式会社
发明人： FUJII SATORU , YOKOCHI KENICHI , FUJITA HIROTAKA , NISHI TERUHITO , ITAKURA KATSUHIRO
IPC分类号： H01L21/301
摘要： PROBLEM TO BE SOLVED: To provide a substrate cutting method and a device for effectively using an area of a base material when ae extremely hard substrate is cut and for suppressing distortion due to PROthe stress of a chip which is cut. SOLUTION: Grooves 8 are formed in one face 50u of the substrate 50 where a plurality of electronic elements 6 are formed. A blade 40 is made to abut on a position 52 corresponding to a position where the groove 8 is formed in the other face 50l of the substrate 50. Then, the substrate 50 is cut by pressing the blade 40 to the substrate 50. COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2004155653A Diamond polishing method 审中-公开
公开(公告)号：JP2004155653A
公开(公告)日：2004-06-03
申请号：JP2004005987
申请日：2004-01-13
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUJII SATORU , HIGAKI KENJIRO , NISHIBAYASHI YOSHIKI , SHIKADA SHINICHI
IPC分类号： C01B31/06 , C30B29/04
摘要： PROBLEM TO BE SOLVED: To provide a diamond polishing method which enables polishing of diamond to a mirror finish under a non-contact state without substantially affected by the state of a substrate, such as its material, warping amount, area, or thickness. SOLUTION: This polishing method comprises dropping a liquid coating agent containing a material different from diamond on the surface of a diamond, hardening the coating agent to form a coating film having a spherical surface on the diamond, and removing, by dry etching, the coating film and the unevenness on the surface of the diamond under such conditions that both the coating film and the diamond can be etched, thus forming a spherical diamond surface. COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2004332017A Method of producing solder film, heat sink provided with solder film, and joined body of semiconductor device and heat sink 审中-公开
标题翻译：生产焊膏膜的方法，带有焊盘的散热片，以及半导体器件和散热片的接合体
公开(公告)号：JP2004332017A
公开(公告)日：2004-11-25
申请号：JP2003126616
申请日：2003-05-01
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： ITAKURA KATSUHIRO , CHIBA YUKIFUMI , FUJII SATORU
IPC分类号： H01L21/52 , B23K35/00 , B23K35/02 , B23K35/14 , B23K35/26 , C23C30/00 , H01L23/373 , H01L23/40 , H01L23/488 , H01S5/02
CPC分类号： H01L23/488 , B23K35/001 , B23K35/0238 , B23K35/262 , B23K2201/40 , H01L23/3736 , H01L2924/0002 , H01S5/02272 , Y10T428/31678 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a solder film consisting of Zn, Bi, Sn or the like, and having a desired composition and a desired melting point by vapor deposition or plating without causing the difficulty in the control of the composition and the control of the melting point, to provide a heat sink provided with the solder film, and suitable as the one for the packaging of the bare chip of a semiconductor device easy to thermally be deteriorated such as a laser diode chip, and to provide a joined body of the heat sink and a semiconductor device.
SOLUTION: The method of producing a solder film includes a process where each single layer formed by stacking a plurality kinds of layers consisting of the simple substance of Zn, Bi or Sn or an alloy of two kinds selected from Zn, Bi and Sn is plurally stacked, and preferably includes a process where an Sn layer is preferably used as the outermost surface layer. The heat sink is provided with the solder film. The joined body of a semiconductor device and the heat sink comprises the semiconductor device packaged on the heat sink.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种由Zn，Bi，Sn等组成的焊料膜的制造方法，并且通过气相沉积或电镀具有所需的组成和所需的熔点，而不会导致控制困难的组成和熔点的控制，以提供设置有焊料膜的散热器，并且适合作为容易被劣化的半导体器件的裸芯片封装的激光二极管芯片，并提供散热器的接合体和半导体器件。＆lt; P＆gt;解决方案：制造焊料膜的方法包括：通过层叠由Zn，Bi或Sn的单质构成的多种层或选自Zn，Bi和 Sn多层叠，优选使用Sn层作为最外表面层的方法。散热器设置有焊料膜。半导体器件和散热器的接合体包括封装在散热片上的半导体器件。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2004328670A Highly stable oscillator 审中-公开
公开(公告)号：JP2004328670A
公开(公告)日：2004-11-18
申请号：JP2003124302
申请日：2003-04-28
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUJII SATORU , ITAKURA KATSUHIRO
IPC分类号： H03B5/32 , H03B5/02 , H03B19/10
摘要： PROBLEM TO BE SOLVED: To provide a highly stable oscillator which easily provides a high-frequency oscillator having stable oscillation characteristics at low cost.
SOLUTION: An oscillator 1 is composed of a voltage controlled crystal oscillator (VCXO) which is a pre-stage low-frequency oscillator and generates and outputs a signal of 19.44 MHz, and a multiplication circuit 11 for multiplying by 32 a frequency of the signal from the VCXO to generate a high-frequency signal of 622.08 MHz, and a SAW filter 12 is installed on the post-stage of the multiplication circuit 11. The SAW filter 12 cuts an excessive frequency component by defining a frequency within a predetermined range from the frequency of 622.08 MHz in the multiplication circuit 11 as a central frequency and passing and outputting a signal component within the predetermined frequency range. Thus, the highly stable oscillator 1 wherein jitter is reduced, can be obtained.
COPYRIGHT: (C)2005,JPO&NCIPI

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