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1. 发明专利

JP2004039931A Method and device for cutting substrate 有权
公开(公告)号：JP2004039931A
公开(公告)日：2004-02-05
申请号：JP2002196371
申请日：2002-07-04
申请人： Daitron Technology Co Ltd , Sumitomo Electric Ind Ltd , ダイトロンテクノロジー株式会社 , 住友電気工業株式会社
发明人： FUJII SATORU , YOKOCHI KENICHI , FUJITA HIROTAKA , NISHI TERUHITO , ITAKURA KATSUHIRO
IPC分类号： H01L21/301
摘要： PROBLEM TO BE SOLVED: To provide a substrate cutting method and a device for effectively using an area of a base material when ae extremely hard substrate is cut and for suppressing distortion due to PROthe stress of a chip which is cut. SOLUTION: Grooves 8 are formed in one face 50u of the substrate 50 where a plurality of electronic elements 6 are formed. A blade 40 is made to abut on a position 52 corresponding to a position where the groove 8 is formed in the other face 50l of the substrate 50. Then, the substrate 50 is cut by pressing the blade 40 to the substrate 50. COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2008124513A Wafer holder and wafer prober installed with the same 审中-公开
标题翻译： WAFER HOLDER和WAFER PROBER安装在同一个位置
公开(公告)号：JP2008124513A
公开(公告)日：2008-05-29
申请号：JP2008031439
申请日：2008-02-13
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NISHI TERUHITO , ITAKURA KATSUHIRO , NATSUHARA MASUHIRO , AWAZU TOMOYUKI , NAKADA HIROHIKO
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a wafer holder that can improve positional accuracy and temperature uniformity to be improved and the chip to be heated and cooled rapidly by reducing deformation even if a high load is applied thereto, and improving the heat insulation effect, and to provide a wafer prober device installed with the wafer holder.
SOLUTION: The wafer holder consists of a chuck top having a chuck top conductor layer on its surface, and a supporter for supporting the chuck top, and has a support member, in a gap between the chuck top and the supporter of which the shape comprises only of the shape of a pipe. The support member is preferably arranged coaxially, with respect to the supporter or arranged substantially at the center of the supporter, and is preferably provided with both the support member arranged coaxially and with the support member arranged substantially at the center.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种晶片保持器，即使施加高负荷，也能够通过减小变形而提高位置精度和温度均匀性并提高快速加热和冷却的芯片，并且提高绝热性效果，并提供安装有晶片保持器的晶片探测器装置。解决方案：晶片保持器由在其表面上具有卡盘顶部导体层的卡盘顶部和用于支撑卡盘顶部的支撑件组成，并且在卡盘顶部和支撑件之间的间隙中具有支撑构件该形状仅包括管的形状。支撑构件优选地相对于支撑件同轴地布置或基本上布置在支撑件的中心，并且优选地设置有同轴布置的支撑构件和基本上布置在中心的支撑构件。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2006253630A Wafer holder and wafer prober loading thereof 有权
标题翻译： WAFER HOLDER和WAFER PROBER LOADING THEREOF
公开(公告)号：JP2006253630A
公开(公告)日：2006-09-21
申请号：JP2005227335
申请日：2005-08-05
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NISHI TERUHITO , ITAKURA KATSUHIRO , NATSUHARA MASUHIRO , AWAZU TOMOYUKI , NAKADA HIROHIKO
IPC分类号： H01L21/66 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To provide a wafer holder where positional precision is improved, equal heat property is improved and a chip can be heated and cooled rapidly by reducing deformation even in the case of applying a high load, and improving a heat insulation effect, and to provide a wafer prober loading the wafer holder.
SOLUTION: The wafer holder consists of a chuck top having a chuck top conductor layer on its surface, and a supporter for supporting the chuck top, and has a supporting member in a gap between the chuck top and the supporter. The supporting member is desirably arranged coaxially with the supporter or arranged nearly in the center of the supporter, and is more desirably provided with both of the supporting member arranged coaxially and the support member arranged nearly in the center.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种提高位置精度的晶片保持器，提高等量的热性能，并且即使在施加高负载的情况下也可以通过减小变形来快速地加热和冷却芯片，并且改善热量绝缘效果，并提供加载晶片保持器的晶片探测器。解决方案：晶片保持器由在其表面上具有卡盘顶部导体层的卡盘顶部和用于支撑卡盘顶部的支撑件组成，并且在卡盘顶部和支撑件之间的间隙中具有支撑构件。支撑构件期望地与支撑件同轴地布置或者几乎布置在支撑件的中心，并且更期望地设置有同轴布置的支撑构件和几乎位于中心的支撑构件。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2013010676A Aluminum nitride sintered compact and wafer holder for semiconductor manufacturing device or inspection device using the same 有权
标题翻译：用于半导体制造装置的氮化镍烧结紧固件和用于其的检测装置
公开(公告)号：JP2013010676A
公开(公告)日：2013-01-17
申请号：JP2011145450
申请日：2011-06-30
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NISHI TERUHITO , NAKADA HIROHIKO , NAKANISHI SHUSUKE , NATSUHARA MASUHIRO
IPC分类号： C04B35/581 , H01L21/205 , H01L21/31 , H01L21/683 , H05B3/74
摘要： PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact that can maintain volume resistivity to a high value at normal temperature but also at high temperature and to provide a wafer holder for a semiconductor manufacturing device or an inspection device at least partially using the aluminum nitride sintered compact.SOLUTION: There is provided the aluminum nitride sintered compact composed of aluminum nitride particles including a carbon nanotube therein, wherein the volume resistivity at normal temperature and at a temperature of 500°C is ≥1.0 x 10Ωcm and ≥1.0 x 10Ωcm.

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