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1. 发明专利

JP2014007434A Mode-locked semiconductor laser element and semiconductor laser device assembly 审中-公开
标题翻译：模式锁定半导体激光元件和半导体激光器件组件
公开(公告)号：JP2014007434A
公开(公告)日：2014-01-16
申请号：JP2013217199
申请日：2013-10-18
申请人： Sony Corp , ソニー株式会社 , Tohoku Univ , 国立大学法人東北大学
发明人： OKI TOMOYUKI , KURAMOTO MASARU , IKEDA MASAO , MIYAJIMA TAKAO , WATANABE HIDEKI , YOKOYAMA HIROYUKI
IPC分类号： H01S5/065 , H01S5/22 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a mode-locked semiconductor laser element having a configuration capable of reducing the influence of piezo polarization and intrinsic polarization.SOLUTION: The mode-locked semiconductor laser element includes: a stacked structure including a sequential stack of a first compound semiconductor layer 30 composed of a GaN-based compound semiconductor, a third compound semiconductor layer 40 having a light-emitting region 41, and a second compound semiconductor layer 50; a second electrode 62; and a first electrode 61. The stacked structure is formed on a semi-polar or non-polar compound semiconductor substrate 21. The third compound semiconductor layer has a quantum well structure having a well layer and a barrier layer, and has an inclined waveguide. The flow of a current from the second electrode to the first electrode via the stacked structure generates an optical pulse in the light-emitting region.
摘要翻译：要解决的问题：提供一种具有能够降低压电极化和固有极化影响的结构的锁模半导体激光元件。解决方案：锁模半导体激光元件包括：堆叠结构，其包括第一由GaN基化合物半导体构成的化合物半导体层30，具有发光区域41的第三化合物半导体层40和第二化合物半导体层50; 第二电极62; 和第一电极61.层叠结构形成在半极性或非极性化合物半导体衬底21上。第三化合物半导体层具有阱层和阻挡层的量子阱结构，并且具有倾斜波导。通过堆叠结构从第二电极到第一电极的电流的流动在发光区域中产生光脉冲。

2. 发明专利

JP2013074001A Light-emitting element and manufacturing method of the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：JP2013074001A
公开(公告)日：2013-04-22
申请号：JP2011210354
申请日：2011-09-27
申请人： Sony Corp , ソニー株式会社
发明人： KURAMOTO MASARU , KODA RINTARO , WATANABE HIDEKI
IPC分类号： H01S5/223
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/141 , H01S5/2009 , H01S5/2031 , H01S5/209 , H01S5/305 , H01S5/3063 , H01S5/309 , H01S5/3211 , H01S5/3213 , H01S5/34333 , H01S5/50 , H01S2301/166 , H01S2301/176
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element having a high output, which can radiate light beams having a single mode.SOLUTION: The light-emitting element comprises: (a) a laminated structure 20 including a first compound semiconductor layer 21, an active layer 23 and a second compound semiconductor layer 22 sequentially laminated on a base substance 20'; (b) a second electrode 32; and (c) a first electrode 31. The first compound semiconductor layer 21 has a lamination structure of a first clad layer 121A and a first optical guide layer 121B laminated from a base substance side. The laminated structure has a ridge stripe structure 20A including a part 121B' in a thickness direction of the second compound semiconductor layer 22, the active layer 23 and the first optical guide layer. When assuming that a thickness of the first optical guide layer 121B is tand a thickness of the part 121B of the first optical guide layer, which is included in the ridge stripe structure 20A is t', the following relational expressions are satisfied: 6×10m
摘要翻译：要解决的问题：提供具有高输出的发光元件，其可以辐射具有单一模式的光束。解决方案：发光元件包括：（a）包括依次层压在基体20'上的第一化合物半导体层21，有源层23和第二化合物半导体层22的层叠结构20; （b）第二电极32; 和（c）第一电极31.第一化合物半导体层21具有从基体侧层叠的第一包层121A和第一导光层121B的层叠结构。层叠结构具有在第二化合物半导体层22的厚度方向上具有部分121B'的脊条状结构20A，有源层23和第一导光层。当假设第一光导层121B的厚度为t 1 时，包括在脊条结构20A中的第一导光层的部分121B的厚度是t 1 '，满足以下关系式：6×10 - 7 m 1 ，0（m） 1 '≤0.5* t 1 。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012195475A Semiconductor laser element assembly and method of driving the same 有权
标题翻译：半导体激光元件组件及其驱动方法
公开(公告)号：JP2012195475A
公开(公告)日：2012-10-11
申请号：JP2011058899
申请日：2011-03-17
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： OKI TOMOYUKI , KURAMOTO MASARU , KODA RINTARO , WATANABE HIDEKI , YOKOYAMA HIROYUKI
IPC分类号： H01S5/065
CPC分类号： H01S5/0602 , B82Y20/00 , H01S5/0425 , H01S5/0625 , H01S5/1064 , H01S5/3063 , H01S5/34333 , H01S2301/166
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element assembly that can emit laser light with high power.SOLUTION: A semiconductor laser element assembly comprises a semiconductor laser element 10 and a light reflection device 70. A stacked structure constituting the semiconductor laser element 10 has a ridge stripe structure 56. Laser light is emitted from one edge face 57A of the ridge stripe structure 56, a part of the laser light is reflected by the light reflection device 70 and is returned to the semiconductor laser element 10, and the rest of the laser light is emitted from the light reflection device to the outside. In addition, the laser light is reflected at the other edge face 57B of the ridge stripe structure 56. When the minimum width of the ridge stripe structure is Wand the maximum width of the ridge stripe structure is W, the following relation is satisfied: 1
摘要翻译：要解决的问题：提供能够以高功率发射激光的半导体激光元件组件。解决方案：半导体激光元件组件包括半导体激光元件10和光反射装置70.构成半导体激光元件10的堆叠结构具有脊状条纹结构56.激光从一个边缘面57A发射脊条纹结构56，一部分激光被光反射装置70反射并返回到半导体激光元件10，其余的激光从光反射装置发射到外部。此外，激光在脊条结构56的另一边缘面57B处被反射。当脊条纹结构的最小宽度为W min 时，最大宽度脊条纹结构为W max ，满足以下关系：1 max / W min <3.3或6≤W max / W min ≤13.3。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2011187580A Self-oscillation type semiconductor laser element and driving method of the same 审中-公开
标题翻译：自激振荡型半导体激光元件及其驱动方法
公开(公告)号：JP2011187580A
公开(公告)日：2011-09-22
申请号：JP2010049750
申请日：2010-03-05
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： WATANABE HIDEKI , KURAMOTO MASARU , MIYAJIMA TAKAO , YOKOYAMA HIROYUKI
IPC分类号： H01S5/065
CPC分类号： H01S5/3407 , H01S5/0601 , H01S5/30 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a driving method of a self-oscillation type semiconductor laser element for making a generated optical pulse shorter and peak output higher without causing a trouble such as heat generation and deterioration. SOLUTION: The self-oscillation type semiconductor laser element is equipped with: a laminated structure obtained by sequentially laminating a first compound semiconductor layer formed of a GaN-based compound semiconductor, a third compound semiconductor layer constituting a light emitting region and a saturable absorption region and a second compound semiconductor; a second electrode formed on the second compound semiconductor layer; and a first electrode which is electrically connected to the first compound semiconductor layer. The second electrode is isolated into: a first part for making a forward bias state by making current flow to the first electrode via the light emitting region; and a second part for applying an electric field to the saturable absorption region by an isolation groove. In the driving method of the self-oscillation type semiconductor laser element, current having a current value in which kink occurs or above in optical output-current characteristic, is made to flow to the first part of the second electrode. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种使自发振荡型半导体激光元件的驱动方法，使得产生的光脉冲更短，并且峰值输出更高，而不会引起诸如发热和劣化的故障。解决方案：自激振荡型半导体激光元件配备有：通过顺序层叠由GaN基化合物半导体形成的第一化合物半导体层，构成发光区域的第三化合物半导体层和饱和吸收区和第二化合物半导体; 形成在第二化合物半导体层上的第二电极; 以及与第一化合物半导体层电连接的第一电极。第二电极被隔离成：通过使电流通过发光区域流向第一电极而产生正向偏置状态的第一部分; 以及第二部分，用于通过隔离槽将电场施加到可饱和吸收区域。在自激振荡型半导体激光元件的驱动方法中，使具有光输出电流特性中发生或更高的扭结的电流值的电流流向第二电极的第一部分。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2013074002A Light-emitting element and manufacturing method of the same 审中-公开
标题翻译：发光元件及其制造方法
公开(公告)号：JP2013074002A
公开(公告)日：2013-04-22
申请号：JP2011210355
申请日：2011-09-27
申请人： Sony Corp , ソニー株式会社
发明人： KODA RINTARO , WATANABE HIDEKI , KURAMOTO MASARU , KONO SHUNSUKE , MIYAJIMA TAKAO
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0218 , H01S5/0655 , H01S5/2031 , H01S5/34333 , H01S5/50 , H01S2301/166
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element having a high output, which can radiate light beams having a single mode.SOLUTION: The light-emitting element comprises: (a) a laminated structure 20 including a first compound semiconductor layer 21 having a first conductivity type, an active layer 23 composed of a compound semiconductor and a second compound semiconductor layer 22 having a second conductivity type, which are sequentially laminated on a base substance 20'; (b) a second electrode 32; and (c) a first electrode 31. The laminated structure 20 has a ridge stripe structure 20A including a part in a thickness direction of at least the second compound semiconductor layer 22. The first compound semiconductor layer 21 has a thickness of more than 0.6 μm. The first compound semiconductor layer 21 includes a high refractive index layer 24 formed therein, composed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material composing the first compound semiconductor layer 21.
摘要翻译：要解决的问题：提供具有高输出的发光元件，其可以辐射具有单一模式的光束。解决方案：发光元件包括：（a）层压结构20，其包括具有第一导电类型的第一化合物半导体层21，由化合物半导体构成的有源层23和具有第二化合物半导体层22的第二化合物半导体层22 第二导电类型，其依次层压在基础物质20'上; （b）第二电极32; 和（c）第一电极31.层叠结构20具有包括至少第二化合物半导体层22的厚度方向的一部分的脊条结构20A.第一化合物半导体层21的厚度大于0.6μm 。第一化合物半导体层21包括其中形成的折射率高于构成第一化合物半导体层21的化合物半导体材料的折射率的化合物半导体材料的高折射率层24.权利要求（ C）2013，JPO＆INPIT

6. 发明专利

JP2012156549A Optical amplifier 审中-公开
标题翻译：光放大器
公开(公告)号：JP2012156549A
公开(公告)日：2012-08-16
申请号：JP2012096727
申请日：2012-04-20
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： MIYAJIMA TAKAO , KODA RINTARO , WATANABE HIDEKI , OKI TOMOYUKI , KURAMOTO MASARU , YOKOYAMA HIROYUKI
IPC分类号： H01S5/022 , H01S5/50
摘要： PROBLEM TO BE SOLVED: To provide an optical amplifier capable of suppressing change in drive current and optical output with time.SOLUTION: An optical amplifying element 20 on a stem 10 is called a transparent type SOA and amplifies short-wavelength light having entered into an incidence side end face 20A to emit light having larger luminance than the incident light from an injection side end face 20B. Both the incidence side end face 20A and the injection side end face 20B of the optical amplifying element 20 have an anti-reflection film on its surface. The optical amplifying element 20 is sealed by the stem 10 and a cap 30. Light transparent windows 32 are provided on an opposite part of the incidence side end face 20A and the injection side end face 20B, respectively, in the cap 30.
摘要翻译：要解决的问题：提供一种能够抑制驱动电流和光输出随时间变化的光放大器。解决方案：杆10上的光放大元件20被称为透明型SOA，并且放大已经进入入射侧端面20A的短波长光，以发射具有比来自注射侧端的入射光更大的亮度的光面20B。光放大元件20的入射侧端面20A和注射侧端面20B都在其表面上具有防反射膜。光学放大元件20由杆10和盖30密封。透光窗32分别设置在盖30中的入射侧端面20A和注射侧端面20B的相对部分上。
版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011204914A Optical oscillator and recording device 审中-公开
标题翻译：光学振荡器和记录装置
公开(公告)号：JP2011204914A
公开(公告)日：2011-10-13
申请号：JP2010070924
申请日：2010-03-25
申请人： Sony Corp , ソニー株式会社
发明人： FUJITA GORO , MIYAJIMA TAKAO , WATANABE HIDEKI
IPC分类号： H01S5/065 , H01S5/026 , H01S5/343
CPC分类号： G11B7/1263 , B82Y20/00 , H01S5/0014 , H01S5/0601 , H01S5/06255 , H01S5/0658 , H01S5/22 , H01S5/34333
摘要： PROBLEM TO BE SOLVED: To provide an optical oscillator capable of readily and simply obtaining desired pulsed light-frequency.SOLUTION: The optical oscillator comprises a supersaturation-absorber part having a double quantum well separation containment heterostructure made of GaInN/GaN/AlGaN material, and for applying negative bias voltage; a self-exciting oscillation semiconductor laser 1 having a gain part for injecting gain current; a light separating means 3 for separating a part of laser light from the self-exciting oscillation semiconductor laser 1; a light receiving element 5 for receiving laser light separated by the light separating means; and a current limiting circuit 6 for controlling current injected into the gain part of the self-exciting oscillation semiconductor laser 1 based on an amount of laser light received by the light receiving element 5.
摘要翻译：要解决的问题：提供能够容易且简单地获得期望的脉冲光频率的光学振荡器。解决方案：光学振荡器包括具有由GaInN / GaN / AlGaN材料制成的双量子阱分离容纳异质结构的过饱和吸收体部分，并施加负偏压; 具有用于注入增益电流的增益部分的自激振荡半导体激光器1; 用于分离来自自激振荡半导体激光器1的一部分激光的光分离装置3; 用于接收由光分离装置分离的激光的光接收元件5; 以及限流电路6，用于根据由光接收元件5接收的激光量控制注入到自激振荡半导体激光器1的增益部分的电流。

8. 发明专利

JP2010251712A Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same 审中-公开
标题翻译：双分半导体激光器件，其制造方法及其驱动方法
公开(公告)号：JP2010251712A
公开(公告)日：2010-11-04
申请号：JP2010031299
申请日：2010-02-16
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： WATANABE HIDEKI , MIYAJIMA TAKAO , IKEDA MASAO , OKI TOMOYUKI , KURAMOTO MASARU , YOKOYAMA HIROYUKI
IPC分类号： H01S5/0625 , H01S5/026 , H01S5/065 , H01S5/22 , H01S5/343
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0425 , H01S5/0602 , H01S5/0658 , H01S5/14 , H01S5/22 , H01S5/3216 , H01S5/34333
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser device accurately, surely and easily forming a second electrode and a ridge structure separated by a separating groove. SOLUTION: This method for manufacturing a bi-section GaN-based semiconductor laser device includes respective processes of: (A) forming a first compound semiconductor layer 30, a compound semiconductor layer 40 that constitutes a light-emitting region 41 and a saturable absorption region 42, and a second compound semiconductor layer 50; thereafter (B) forming a strip-shaped second electrode 62 on the second compound semiconductor layer 50; then (C) forming a ridge structure by etching at least a part of the second compound semiconductor layer 50 using the second electrode 62 as an etching mask; and thereafter (D) forming a separating groove 62C in the second electrode 62 by a wet etching method, and thereby separating the second electrode into a first portion 62A and a second portion 62B by the separating groove. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了准确地提供半导体激光装置的制造方法，可靠地容易地形成由分离槽分离的第二电极和脊状结构。解决方案：用于制造双相GaN基半导体激光器件的方法包括以下各处理：（A）形成第一化合物半导体层30，构成发光区域41的化合物半导体层40和饱和吸收区域42和第二化合物半导体层50; 此后（B）在第二化合物半导体层50上形成带状的第二电极62; 然后（C）通过使用第二电极62作为蚀刻掩模蚀刻第二化合物半导体层50的至少一部分来形成脊结构; 然后（D）通过湿式蚀刻法在第二电极62中形成分离槽62C，从而通过分离槽将第二电极分离成第一部分62A和第二部分62B。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010034252A Semiconductor laser, its driving method, and semiconductor laser device 有权
标题翻译：半导体激光器，其驱动方法和半导体激光器件
公开(公告)号：JP2010034252A
公开(公告)日：2010-02-12
申请号：JP2008194373
申请日：2008-07-29
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： YOKOYAMA HIROYUKI , KONO SHUNSUKE , OKI TOMOYUKI , IKEDA MASAO , MIYAJIMA TAKAO , WATANABE HIDEKI
IPC分类号： H01S5/068
CPC分类号： H01S5/06216 , H01S5/0428
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser with an ultrashort pulse and an ultrahigh output by a simple construction and structure.
SOLUTION: The semiconductor laser is driven by a pulse current with a value that is ten times or more as large as that of a threshold current or a pulse voltage that is twice or more as large as that of a threshold voltage, or the semiconductor laser emits a first light peak with a light intensity larger than three wats and with a half width of 20 picoseconds or less, and a second light peak, subsequent to the first light peak, that has an energy of 1 nano-joule or larger and a duration of 1 nanosecond or more.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过简单的结构和结构为半导体激光器提供超短脉冲和超高输出。解决方案：半导体激光器由脉冲电流驱动，其值是阈值电流的十倍或更大的值，或者是阈值电压的两倍或更多的脉冲电压，或所述半导体激光器发射具有大于3瓦特的光强度并且具有20皮秒或更小的半宽度的第一光峰，以及在所述第一光峰之后的具有1纳焦耳的能量的第二光峰或较大且持续时间为1纳秒或更长。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009232367A Image processing apparatus and method, and program 有权
标题翻译：图像处理设备和方法，程序
公开(公告)号：JP2009232367A
公开(公告)日：2009-10-08
申请号：JP2008077788
申请日：2008-03-25
申请人： Sony Corp , ソニー株式会社
发明人： AOYAMA KOJI , WATANABE HIDEKI , YAMATAKE HIROAKI
IPC分类号： H04N19/00 , H04N19/117 , H04N19/134 , H04N19/136 , H04N19/167 , H04N19/196 , H04N19/423 , H04N19/85 , H04N19/86
CPC分类号： H04N19/117 , H04N19/16 , H04N19/61 , H04N19/86 , H04N19/865
摘要： PROBLEM TO BE SOLVED: To highly accurately measure image data block size. SOLUTION: A block step information acquiring section 41 obtains a block step from the differential of a pixel value from a nearby pixel for each pixel of an image and obtains distribution information accumulating the block step of each position in a predetermined direction. A cycle measuring section 43 measures small cycle information that is distribution information for each phase in a plurality of predetermined small cycles corresponding to a plurality of block sizes from the distribution information. A determination section 45 determines a block size corresponding to the small cycle information, in which the distribution of phase takes a maximum value, as a block size in the image from among the small cycle information items of the plurality of predetermined small cycles corresponding to the plurality of block sizes. The present invention is applicable to e.g., an image processing apparatus such as a television receiver. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：高精度地测量图像数据块大小。解决方案：块步骤信息获取部分41从图像的每个像素的附近像素的像素值的差分中获得块步长，并且获得在预定方向上累积每个位置的块步长的分布信息。周期测量部分43测量作为与分配信息对应的多个块大小的多个预定小周期中的每个相位的分布信息的小周期信息。确定部分45将对应于其中相位分布的小周期信息的块大小从对应于多个预定小周期的小周期信息项中确定为图像中的块大小多个块大小。本发明可应用于例如电视接收机等图像处理装置。版权所有（C）2010，JPO＆INPIT

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