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1. 发明专利

JP2013079849A Amine-based gas sensor reference film 审中-公开
标题翻译：基于氨的气体传感器参考膜
公开(公告)号：JP2013079849A
公开(公告)日：2013-05-02
申请号：JP2011219376
申请日：2011-10-03
申请人： Snt Co , 株式会社Snt , Murata Mfg Co Ltd , 株式会社村田製作所
发明人： SHIRATORI TOKIAKI , NOZAKI YOSHIMI , HOTTA YOSHIO , USHIMI YOSHIMITSU , ITO YOSHIHIRO
IPC分类号： G01N5/02
摘要： PROBLEM TO BE SOLVED: To provide a reference film which is insensitive to amine-based gas only, shows the same characteristics as those of an amine-based gas sensor regarding the other conditions and is effective as a reference for the amine-based gas sensor.SOLUTION: A sensor film composed of a phosphoric acid inorganic compound is treated with an alkaline material or a salt obtained from an alkaline material to provide an amine-based gas sensor reference film.
摘要翻译：要解决的问题：为了提供对胺类气体不敏感的参比膜，与其他条件相比，具有与胺系气体传感器相同的特性，作为胺系气体传感器的参考，基于气体传感器。解决方案：由碱性材料或由碱性材料获得的盐处理由磷酸无机化合物组成的传感器膜，以提供胺基气体传感器参考膜。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2004221622A Piezoelectric resonator, piezoelectric filter, duplexer, communication apparatus, and manufacturing method of piezoelectric resonator 审中-公开
公开(公告)号：JP2004221622A
公开(公告)日：2004-08-05
申请号：JP2002338036
申请日：2002-11-21
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： YAMADA HAJIME , TAKEUCHI MASAKI , KAWAMURA HIDEKI , FUJINO HIROYUKI , YOSHINO YUKIO , KAMISAKA KENICHI , NOMURA TADASHI , NAKAMURA DAISUKE , USHIMI YOSHIMITSU , HAYASHI TAKASHI
IPC分类号： C23C14/08 , C23C14/10 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/253 , H01L41/29 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02 , H03H9/17 , H03H9/58
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator. SOLUTION: The piezoelectric thin film resonator 1 is provided with: a substrate 2 having an opening 5; first 6 and second 7 insulation films which are provided on one surface of the substrate 2 while covering the opening 5 and which primarily include SiO 2 and Al 2 O 3 , respectively, Al 2 O 3 having oxygen defect and being in an amorphous state; and a piezoelectric thin film 10 which is provided on the second insulation film 7 and is sandwiched between electrodes 8, 9 and which primarily includes ZnO. COPYRIGHT: (C)2004,JPO&NCIPI

3. 发明专利

JP2007294764A Electronic component and its manufacturing method 审中-公开
标题翻译：电子元件及其制造方法
公开(公告)号：JP2007294764A
公开(公告)日：2007-11-08
申请号：JP2006122592
申请日：2006-04-26
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： YAMADA HAJIME , USHIMI YOSHIMITSU , KAMISAKA KENICHI , SAITO TOMOKA , AIZAWA NAOKO , FUJINO HIROYUKI
IPC分类号： H01G4/12 , H01G4/33 , H01G13/00
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for an electronic component capable of manufacturing a capacitor that is large in capacity, has little variation in characteristics, and is capable of being provided at a low cost.
SOLUTION: The electronic component 10 contains a substrate 12. A first electrode 14 is formed at the center of the one primary surface of the substrate 12. A dielectric ceramic green sheet 15 containing dielectric ceramic material is formed on the substrate 12 and the first electrode 14. A part of the dielectric ceramic green sheet 15 overlapping with the center of the first electrode 14 is melted and baked by irradiation with a laser beam, so that a high-permittivity dielectric thin film 16 is formed on the center of the first electrode 14. The residual part of the dielectric ceramic green sheet 15 is removed. A second electrode 18 is formed on the center of the dielectric thin film 16.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够制造容量大的电容器的电子部件的制造方法，特性的变化很小，并且能够以低成本提供。电子部件10包含基板12.第一电极14形成在基板12的一个主表面的中心。包含电介质陶瓷材料的电介质陶瓷生片15形成在基板12上，第一电极14.与第一电极14的中心重叠的电介质陶瓷生片15的一部分通过用激光束照射而熔化和烘烤，使得在介电陶瓷生片15的中心形成高介电常数介电薄膜16 第一电极14.去除电介质陶瓷生片15的剩余部分。第二电极18形成在电介质薄膜16的中心。版权所有：（C）2008，JPO＆INPIT

4. 发明专利

JP2004312201A Piezoelectric resonator, manufacturing method therefor, piezoelectric filter, duplexer and communication equipment 审中-公开
公开(公告)号：JP2004312201A
公开(公告)日：2004-11-04
申请号：JP2003100991
申请日：2003-04-04
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： YAMADA HAJIME , NAKAMURA DAISUKE , USHIMI YOSHIMITSU , UMEDA KEIICHI
IPC分类号： H03H9/17 , H03H3/02 , H03H9/58 , H03H9/70
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric resonator whose resonance characteristics can be improved, a manufacturing method of the resonator, a piezoelectric filter using the piezoelectric resonator, a duplexer and communication equipment.
SOLUTION: An Si substrate 12 having a hollow part 17 is arranged. In a vibration part 20, upper/lower faces of a thin film having piezoelectric thin film 16 having not less than one layer and formed on the hollow part 17 are sandwiched by an upper electrode 15b and a lower electrode 15a by making them face each other. The hollow part 17 of the Si substrate 12 and an insulting thin film 18 formed along the lower electrode 15a are disposed. A dummy layer 13 is installed between the Si substrate 12 and the piezoelectric thin film 16 and on a peripheral part of the hollow part 17 in the Si substrate 12.
COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2004048639A Piezo-resonator and manufacturing method of the same 审中-公开
公开(公告)号：JP2004048639A
公开(公告)日：2004-02-12
申请号：JP2002338037
申请日：2002-11-21
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： KAMISAKA KENICHI , YAMADA HAJIME , TAKEUCHI MASAKI , KAWAMURA HIDEKI , YOSHINO YUKIO , NOMURA TADASHI , USHIMI YOSHIMITSU , HAYASHI TAKASHI , NAKAMURA DAISUKE
IPC分类号： H01L41/09 , H01L21/316 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/17 , H03H9/54
摘要： PROBLEM TO BE SOLVED: To provide a piezo-resonator having high yield rate, in which stress that a thin film has is made extremely small and which is superior in resonance characteristics. SOLUTION: The resonator includes a substrate 2, an insulating film 4 formed above the substrate 2, an oscillation section 8 having a structure that top and bottom surfaces of a thin film section which has at least one or more layers of piezoelectric thin film are sandwiched by at least one pair of upper electrode 7 and a lower electrode 5 by facing with each other in a thickness direction, and the roughness arithmetic average (Ra) of the lower electrode is 2.5nm or less. Preferably, the surface of the insulating film 4 has the roughness arithmetic average (Ra) of 1.0nm or less, and the stress of the insulating film 4 is set to 250MPa or less on compressive stress and 400MPa on tensile stress. COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2005101569A Manufacturing method of piezoelectric thin film and piezo-resonator 审中-公开
标题翻译：压电薄膜和PIEZO共振器的制造方法
公开(公告)号：JP2005101569A
公开(公告)日：2005-04-14
申请号：JP2004242886
申请日：2004-08-23
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： USHIMI YOSHIMITSU , YAMADA HAJIME , KAWAMURA HIDEKI
IPC分类号： C23C14/08 , C23C16/40 , H01L21/316 , H01L41/09 , H01L41/18 , H01L41/316 , H01L41/331 , H01L41/39 , H03H3/02 , H03H9/17 , H01L41/24
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a piezoelectric thin film having excellent piezoelectric properties, and also to provide a piezo-resonator using the thin film, which has excellent piezoelectric properties and is suitable for high frequency. SOLUTION: The piezo-resonator 50 comprises a substrate 1 and a vacuum film-forming device 3b. A piezoelectric thin film 2 and excitation electrodes 3a, 3b constitute a piezoelectric element. The substrate 1 is provided with a cavity portion 4 at its rear, and its upper surface is provided with a thin-film support 5 constituted of a portion of the substrate. The piezoelectric thin film 2 is formed with the moisture pressure of the vacuum film-forming device being 2×10 -5 Pa or more during film formation. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有优异的压电性能的压电薄膜的制造方法，并且还提供具有优异的压电性能并且适合于高频的使用该薄膜的压电谐振器。解决方案：压电谐振器50包括基板1和真空成膜装置3b。压电薄膜2和激励电极3a，3b构成压电元件。基板1在其后部设置有空腔部分4，并且其上表面设置有由基板的一部分构成的薄膜支撑件5。在成膜期间，形成压电薄膜2的真空成膜装置的水分压力为2×10 -5Pa / Pa以上。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2005094735A Electronic component and method of manufacturing the same 审中-公开
标题翻译：电子元件及其制造方法
公开(公告)号：JP2005094735A
公开(公告)日：2005-04-07
申请号：JP2004188842
申请日：2004-06-25
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： UMEDA KEIICHI , YAMADA HAJIME , USHIMI YOSHIMITSU , NAKAMURA DAISUKE
IPC分类号： H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/319 , H03H3/02 , H03H9/02 , H03H9/17
CPC分类号： H03H9/02094 , H03H3/02 , H03H9/173 , H03H9/174 , H03H2003/023
摘要： PROBLEM TO BE SOLVED: To provide an electronic component such as a piezoelectric filter capable of improving characteristics such as piezoelectric characteristics, and a method of manufacturing the same. SOLUTION: There is provided an insulating film 3 including an aluminum nitride film 7 supported by a support substrate 2. Then, a lower electrode 5a, a piezoelectric thin film 4, and an upper electrode 5b are provided in this order on the aluminum nitride film 7. The piezoelectric film 4 is disposed between the lower electrode 5a and the upper electrode 5b which oppose each other. Furthermore, the aluminum nitride film 7 is subjected to a plasma treatment in an oxygen-containing atmosphere to form an oxide layer 7a on the aluminum nitride film 7, the oxide layer 7a is made smoother than the aluminum nitride film 7. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够提高压电特性等特性的压电滤波器等电子部件及其制造方法。
解决方案：提供包括由支撑基板2支撑的氮化铝膜7的绝缘膜3.然后，依次将下电极5a，压电薄膜4和上电极5b设置在氮化铝膜7.压电膜4设置在彼此相对的下电极5a和上电极5b之间。此外，在含氧气氛中对氮化铝膜7进行等离子体处理，以在氮化铝膜7上形成氧化物层7a，使氧化物层7a比氮化铝膜7更光滑。（C）2005，JPO＆NCIPI

8. 发明专利

JP2003344155A Infrared sensor 审中-公开
标题翻译：红外传感器
公开(公告)号：JP2003344155A
公开(公告)日：2003-12-03
申请号：JP2002158553
申请日：2002-05-31
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： FUJII HIDETOSHI , KUBO RYUICHI , SAKANO KIWAMU , USHIMI YOSHIMITSU
IPC分类号： G01J1/02 , H01L35/32 , H01L35/34 , H01L37/02
摘要： PROBLEM TO BE SOLVED: To provide an infrared sensor capable of relaxing stress from a protective film to a thermoelectric converter.
SOLUTION: The infrared sensor includes a thermoelectric converter 5 for converting heat into electricity, and the protective film 6 for protecting the thermoelectric converter 5 by covering the thermoelectric converter 5. In the protective film 6, at least one layer of a film 6a or more having tensile stress and at least one layer of a film 6b or more having compressive stress are formed by lamination to adjust total stress. At least one layer of the protective film is formed by deposition. The film having compressive stress is a film mainly made of silicon oxides. The film having tensile stress is made of a film mainly made of aluminium oxides.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种能够从保护膜向热电转换器释放应力的红外传感器。解决方案：红外传感器包括用于将热量转换成电力的热电转换器5和用于通过覆盖热电转换器5来保护热电转换器5的保护膜6.在保护膜6中，至少一层膜通过层压形成具有拉伸应力的6a或更多个具有压应力的膜6b或更多层的膜以调节总应力。通过沉积形成至少一层保护膜。具有压应力的膜是主要由氧化硅制成的膜。具有拉伸应力的膜由主要由氧化铝制成的膜制成。版权所有（C）2004，JPO

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