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1. 发明专利

JP2003344155A Infrared sensor 审中-公开
标题翻译：红外传感器
公开(公告)号：JP2003344155A
公开(公告)日：2003-12-03
申请号：JP2002158553
申请日：2002-05-31
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： FUJII HIDETOSHI , KUBO RYUICHI , SAKANO KIWAMU , USHIMI YOSHIMITSU
IPC分类号： G01J1/02 , H01L35/32 , H01L35/34 , H01L37/02
摘要： PROBLEM TO BE SOLVED: To provide an infrared sensor capable of relaxing stress from a protective film to a thermoelectric converter.
SOLUTION: The infrared sensor includes a thermoelectric converter 5 for converting heat into electricity, and the protective film 6 for protecting the thermoelectric converter 5 by covering the thermoelectric converter 5. In the protective film 6, at least one layer of a film 6a or more having tensile stress and at least one layer of a film 6b or more having compressive stress are formed by lamination to adjust total stress. At least one layer of the protective film is formed by deposition. The film having compressive stress is a film mainly made of silicon oxides. The film having tensile stress is made of a film mainly made of aluminium oxides.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种能够从保护膜向热电转换器释放应力的红外传感器。解决方案：红外传感器包括用于将热量转换成电力的热电转换器5和用于通过覆盖热电转换器5来保护热电转换器5的保护膜6.在保护膜6中，至少一层膜通过层压形成具有拉伸应力的6a或更多个具有压应力的膜6b或更多层的膜以调节总应力。通过沉积形成至少一层保护膜。具有压应力的膜是主要由氧化硅制成的膜。具有拉伸应力的膜由主要由氧化铝制成的膜制成。版权所有（C）2004，JPO

2. 发明专利

JP2005065225A Surface acoustic wave demultiplexer 有权
标题翻译：表面声波除颤器
公开(公告)号：JP2005065225A
公开(公告)日：2005-03-10
申请号：JP2004130818
申请日：2004-04-27
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： SAKANO KIWAMU , OMOTE RYOICHI
IPC分类号： H03H9/72 , H03H9/25
CPC分类号： H03H9/72 , H03H9/0576 , H03H9/725
摘要： PROBLEM TO BE SOLVED: To provide a surface acoustic wave demultiplexer which includes first and second surface acoustic wave filters of different frequencies and makes the characteristics of both filters excellent. SOLUTION: A surface acoustic wave demultiplexer 3 includes a first surface acoustic wave filter 8, and a second surface acoustic wave filter 15 having a higher center frequency than the first surface acoustic wave filter 8. A piezoelectric substrate 20 where the first surface acoustic wave filter 8 is constituted and a second piezoelectric substrate 22 where the second surface acoustic wave filter 15 is constituted are made of different piezoelectric materials. The surface acoustic wave demultiplexer 3 further includes a one-terminal-pair surface acoustic wave resonator 9 connected to the input terminal of the first surface acoustic wave filter 15 in series and having an anti-resonant frequency in the stop band of the first surface acoustic wave filter 15. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种表面声波解复用器，其包括不同频率的第一和第二声表面波滤波器，并且使得两个滤波器的特性都优异。解决方案：声表面波解复用器3包括第一声表面波滤波器8和具有比第一声表面波滤波器8高的中心频率的第二表面声波滤波器15.压电基片20，其中第一表面构成声波滤波器8，构成第二声表面波滤波器15的第二压电基板22由不同的压电材料构成。声表面波解复用器3还包括串联连接到第一声表面波滤波器15的输入端的单端对声表面波谐振器9，并且在第一表面声波的阻带中具有反谐振频率滤波器15.版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2004037198A Infrared sensor 审中-公开
公开(公告)号：JP2004037198A
公开(公告)日：2004-02-05
申请号：JP2002193472
申请日：2002-07-02
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： SAKANO KIWAMU , YOSHINO YUKIO , KUBO RYUICHI , NOMURA TADASHI
IPC分类号： G01V8/12 , G01J1/02 , H01L35/22 , H01L35/32
摘要： PROBLEM TO BE SOLVED: To provide an infrared sensor that has sufficient heat resistance and has improved productivity. SOLUTION: The infrared sensor has a board having a diaphragm section 4 and a support section 2. An insulating layer 3 having a protection function made of silicon nitride or the like is formed on the board. A thermocouple is formed on it. The thermocouple comprises a pair of thermocouple elements 7 that are formed by a thin film mainly made of zinc oxide; and the other thermocouple element 6 formed by a thin film made of a material that differs from the thermocouple element 7. The two types of thermocouple elements are alternately connected in series, a warm junction 8 and a cold junction 9 are alternately provided at connection sections in a row, the warm junction 8 is arranged on the diaphragm section 4, the cold junction 9 is arranged on the support section 2, and the surface of the thermocouple is covered with a protection layer 5 made of silicon nitride or the like. COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2013145932A Surface acoustic wave device and manufacturing method therefor 审中-公开
标题翻译：表面声波设备及其制造方法
公开(公告)号：JP2013145932A
公开(公告)日：2013-07-25
申请号：JP2010107360
申请日：2010-05-07
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： SAKANO KIWAMU , YAMADA HIDE
IPC分类号： H03H9/25 , H01L23/08 , H01L23/12 , H03H3/08
CPC分类号： H01L23/49822 , H01L23/3121 , H01L23/315 , H01L23/49811 , H01L2224/16225 , H01L2924/09701 , H03H9/059 , H03H9/1085 , Y10T29/49005
摘要： PROBLEM TO BE SOLVED: To provide a CSP type surface acoustic wave device in which bonding strength is high between a surface acoustic wave element and a mounting board.SOLUTION: A surface acoustic wave device 1 includes a surface acoustic wave element 20 having a plurality of electrode pads 23, bumps 30 composed of Au and formed on the electrode pads 23, and a mounting board 10. The surface acoustic wave element 20 is flip-chip mounted on the die attach surface 10a of the mounting board 10. The mounting board 10 has at least one resin layer 12a-12c having a via hole 10e formed therein, a plurality of mounting electrodes 11 formed on the die attach surface 10a of the mounting board 10, and a via hole conductor 14a. At least the surface layer of the mounting electrode 11 is composed of Au. The mounting electrode 11 is bonded to the electrode pad 23 by means of the bump 30. The via hole conductor 14a is formed in the via hole 10e. At least one of the via hole conductors 14a is placed below the bump 30.
摘要翻译：要解决的问题：提供一种表面声波元件和安装板之间的结合强度高的CSP型弹性表面波器件。解决方案：声表面波器件1包括具有多个电极焊盘23，由Au构成并形成在电极焊盘23上的凸块30以及安装板10.表面声波元件20被倒装安装在安装板10的芯片附接表面10a上。安装板10 具有形成有通孔10e的至少一个树脂层12a-12c，形成在安装基板10的芯片安装面10a上的多个安装电极11和通孔导体14a。至少安装电极11的表面层由Au构成。安装电极11通过凸块30接合到电极焊盘23.通孔导体14a形成在通孔10e中。通孔导体14a中的至少一个设置在凸块30的下方。

5. 发明专利

JP2004200941A Splitter and communication device 有权
公开(公告)号：JP2004200941A
公开(公告)日：2004-07-15
申请号：JP2002365968
申请日：2002-12-18
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： SAKANO KIWAMU
IPC分类号： H01P1/203 , H01P1/213 , H01P7/08 , H03H7/38 , H03H7/46 , H03H9/64 , H03H9/72 , H04B1/52
CPC分类号： H03H9/0576 , H01P1/2135 , H03H2001/0078 , H04B1/52 , H04B1/525
摘要： PROBLEM TO BE SOLVED: To provide a splitter which can avoid the increase of the size while suppressing a high harmonic wave, and a communication device.
SOLUTION: The splitter has a transmission side filter 1 and a reception side filter 2, which are connected in parallel to an antenna terminal 3, and a matching circuit 15 which is located between the antenna terminal 3 and at least either of the transmission side filter 1 and the reception side filter 2. A part of the matching circuit 15 is also used as trap circuits 9, 10 for suppressing the high harmonic wave.
COPYRIGHT: (C)2004,JPO&NCIPI

6. 发明专利

JP2004146586A ZnO-BASED THIN FILM, THERMOELECTRIC CONVERTER ELEMENT AND INFRARED SENSOR USING THE SAME 有权
公开(公告)号：JP2004146586A
公开(公告)日：2004-05-20
申请号：JP2002309651
申请日：2002-10-24
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： SAKANO KIWAMU , YOSHINO YUKIO , KUBO RYUICHI , NOMURA TADASHI , TAKEUCHI MASAKI , YAMADA HAJIME
IPC分类号： G01J1/02 , C23C14/08 , H01L35/22 , H01L35/34
摘要： PROBLEM TO BE SOLVED: To provide a ZnO-based thin film having a high thermoelectric material property, and a thermoelectric converter element and an infrared sensor using the same.
SOLUTION: An average crystal grain diameter of the ZnO-based thin film is 200 nm or larger, and variations of the grain diameters are 30 nm or less in terms of a standard variation. Using a thin film formation method, the ZnO-based thin film is formed at a film formation rate of 10 nm/min or less. For the thin film formation method, a sputtering method, a vacuum evaporation method, a CVD method, a laser ablation method, or the like may be used. Using the ZnO-based thin film, a thermo couple of the thermoelectric converter element or of the infrared sensor is fabricated.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2003344154A Infrared sensor 审中-公开
标题翻译：红外传感器
公开(公告)号：JP2003344154A
公开(公告)日：2003-12-03
申请号：JP2002155812
申请日：2002-05-29
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： SAKANO KIWAMU , YOSHINO YUKIO , KUBO RYUICHI , NOMURA TADASHI
IPC分类号： G01J1/02 , G01J5/02 , G01J5/12 , G01J5/14 , H01L27/14
摘要： PROBLEM TO BE SOLVED: To provide an infrared sensor having both sufficient resistance to heat and high productivity.
SOLUTION: The infrared sensor 20 is provided with a substrate and thermocouples formed on the substrate, and the substrate comprises a diaphragm 4 and a support 2. The thermocouples are constituted of one thermocouple elements 7 made of a membrane mainly made of zinc oxides, and the other thermocouple elements 6 made of a membrane made of a material different from the one thermocouple elements 7. The two types of the thermocouple elements are alternately connected in series. Hot junctions 8 and cold junctions 9 are alternately provided for continuous connecting parts. The hot junctions 8 are arranged on the diaphragm 4, and the cold junctions 9 are arranged on the support 2.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供具有足够的耐热性和高生产率的红外传感器。
解决方案：红外传感器20设置有形成在基板上的基板和热电偶，基板包括隔膜4和支撑件2.热电偶由主要由锌制成的膜构成的一个热电偶元件7 氧化物和由不同于一个热电偶元件7的材料制成的膜制成的其它热电偶元件6.两种类型的热电偶元件串联交替连接。热连接点8和冷接点9交替设置用于连续连接部分。热交点8布置在隔膜4上，冷接点9布置在支撑件2上。版权所有（C）2004，JPO

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