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1. 发明专利

JP2014048182A Film thickness measuring device 审中-公开
标题翻译：薄膜厚度测量装置
公开(公告)号：JP2014048182A
公开(公告)日：2014-03-17
申请号：JP2012192030
申请日：2012-08-31
申请人： Sharp Corp , シャープ株式会社
发明人： HOUSHI NORIKAZU , SAKAGAMI HIDEKAZU , HARADA TOKUMI , YAMAWAKI CHIAKI
IPC分类号： G01B15/02
CPC分类号： G01B15/02 , G01N23/2055 , G01N23/223 , G01N2223/633
摘要： PROBLEM TO BE SOLVED: To provide a film thickness measuring device capable of improving measurement accuracy of a film thickness and shortening measurement time of the film thickness.SOLUTION: A measuring head (23) irradiates a film of a product substrate (10) with a primary X-ray and detects a fluorescent X-ray generated from this film. An analysis means (33) obtains a thickness of the film from an intensity of the fluorescent X-ray detected by the measuring head (23).
摘要翻译：要解决的问题：提供一种能够提高膜厚度的测量精度并缩短膜厚测量时间的膜厚测量装置。解决方案：测量头（23）将产品基板（10）的膜与并且检测从该膜产生的荧光X射线。分析装置（33）根据由测量头（23）检测的荧光X射线的强度获得薄膜的厚度。

2. 发明专利

JP2011233777A Vapor phase growth device, vapor phase growth method, and method of manufacturing semiconductor element 有权
标题翻译：蒸气相生长装置，蒸汽相生长方法及制造半导体元件的方法
公开(公告)号：JP2011233777A
公开(公告)日：2011-11-17
申请号：JP2010103984
申请日：2010-04-28
申请人： Sharp Corp , シャープ株式会社
发明人： ADACHI YUSUKE , SAKAGAMI HIDEKAZU
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： H01L21/02538 , C23C16/301 , C23C16/45565 , C23C16/45572 , C23C16/45574 , C30B25/14 , C30B29/40 , H01L21/02579 , H01L21/0262
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth device, a vapor phase growth method, and a method of manufacturing a semiconductor element in which a metal material susceptible to solidification can be introduced effectively into a reactor without adhering to a shower head or the side surface of piping and doped.SOLUTION: Inside diameter (W1) of group V material gas introduction piping 42 is set larger than the outside diameter (W2) of group III material gas introduction piping 44, and the group III material gas introduction piping 44 is inserted into the group V material gas introduction piping 42 in one-to-one correspondence. With such a structure, the group III material gas introduction piping 44 is prevented from being cooled by a cooling mechanism and solidification of a metal material to the wall surface of the piping can be minimized.
摘要翻译：要解决的问题：为了提供气相生长装置，气相生长方法和制造半导体元件的方法，其中可以将易凝固的金属材料有效地引入反应器而不粘附到淋浴头或管道的侧面和掺杂。解决方案：组V材料气体导入管42的内径（W1）设定为大于III类原料气体导入配管44的外径（W2），将III族原料气体导入配管44插入 V组材料气体导入管42一一对应。通过这样的结构，能够防止III族原料气体导入配管44被冷却机构冷却，能够使配管的壁面的金属凝固化最小化。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011012331A Vapor deposition apparatus and vapor deposition method 有权
标题翻译：蒸气沉积装置和蒸气沉积方法
公开(公告)号：JP2011012331A
公开(公告)日：2011-01-20
申请号：JP2009159720
申请日：2009-07-06
申请人： Sharp Corp , シャープ株式会社
发明人： OKADA TOSHINORI , UNEYAMA KAZUHIRO , SAKAGAMI HIDEKAZU , TSUBOI TOSHIKI
IPC分类号： C23C16/455 , H01L21/205
CPC分类号： C23C16/45574 , C23C16/301 , C30B25/14
摘要： PROBLEM TO BE SOLVED: To solve such a problem that a high-temperature region and a low-temperature region are formed on a shower plate due to an influence of a heating region of a substrate-heating heater, a flaky product that easily exfoliates is formed on the surface of the shower plate at the low-temperature region (non-heated region) in an outer peripheral portion of the shower plate, and the product deposits on a substrate to be treated as a contaminant and causes the deterioration of the quality and uniformity of the film.SOLUTION: This vapor deposition apparatus is constituted by: arranging a space in the outside of a region of the shower plate opposing to a substrate-holding member and in the contacting face between a shower head and the shower plate; and providing a plurality of through-holes that communicate with the inside of a reaction chamber, in a region part in which the space of the shower plate has been arranged, and that introduce a purge gas to the reaction chamber therethrough. Therefore, the apparatus can pass a source gas which exists on the surface of the shower plate in the non-heated region, toward a gas exhaust port side, and further can make a stagnant region hardly formed at a corner. Thus, the apparatus reduces the product to be formed on the surface of the shower plate, and secures the uniformity and reproducibility of the film on the substrate to be treated.
摘要翻译：要解决的问题为了解决由于基板加热器的加热区域的影响而在喷淋板上形成高温区域和低温区域的问题，易剥离的片状产品是在喷淋板的外周部的低温区域（非加热区域）的表面形成喷淋板的表面，并且产品沉积在待处理的基板上作为污染物，并且导致质量的劣化并且膜的均匀性。溶液：该蒸镀装置由以下部分构成：在喷淋板的与基板保持部件相对的区域的外侧和淋浴喷头和喷淋板之间的接触面内配置空间; 并且在布置有喷淋板的空间的区域部分中提供与反应室内部连通的多个通孔，并且通过其将反应室引入净化气体。因此，该装置能够将存在于非加热区域的喷淋板的表面的源气体朝向排气口侧通过，并且还可以在拐角处形成几何形状的停滞区域。因此，该装置减少了要在喷淋板的表面上形成的产品，并且确保了待处理的基板上的膜的均匀性和再现性。

4. 发明专利

JP2010109297A Tray, vapor phase growth equipment, and vapor phase growth method 有权
标题翻译：托盘，蒸汽相生长设备和蒸汽相生长方法
公开(公告)号：JP2010109297A
公开(公告)日：2010-05-13
申请号：JP2008282482
申请日：2008-10-31
申请人： Sharp Corp , シャープ株式会社
发明人： ADACHI YUSUKE , SAKAGAMI HIDEKAZU
IPC分类号： H01L21/683 , C23C16/44 , C23C16/458 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a tray which prevents a decrease of effective stacking area of a workpiece, whose film thickness uniformity is not damaged by intrusion of an reaction gas to susceptor, and which can decrease a frequency of maintenance of a susceptor, and to provide a vapor phase growth equipment and a vapor phase growth method. SOLUTION: The workpiece 24 is transferred while being mounted, and is located on a susceptor 7. The tray includes a substrate mounting plate 21 which has at least one recess 21c on its surface and holds the workpiece 24 while it is located in the recess 21c, a plate transfer hold member 22 which has a step 22b that holds the surrounding extension 21a of the substrate mounting plate 21 from the lower side when transferring the plate 21, and a cover plate 23 which covers over the periphery of the substrate mounting plate 21 and the crowed out part of periphery of the substrate mounting plate 21 in the plate transfer hold member 22. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种防止由于反应气体侵入基座而使其膜厚均匀性不被损坏的工件的有效堆积面积减小的托盘，并且可以降低维护的频率感受器，并提供气相生长设备和气相生长方法。解决方案：工件24在安装时传送并位于基座7上。托盘包括基板安装板21，该基板安装板21在其表面上具有至少一个凹部21c并且在工件24位于其中时保持工件24 凹部21c，板转移保持构件22，其具有在传送板21时从下侧保持基板安装板21的周围延伸部21a的台阶22b以及覆盖基板周边的盖板23 安装板21和基板安装板21的周边的挤出部分在板转移保持构件22中。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010059520A Vapor deposition apparatus and vapor deposition method 审中-公开
标题翻译：蒸气沉积装置和蒸气沉积方法
公开(公告)号：JP2010059520A
公开(公告)日：2010-03-18
申请号：JP2008228649
申请日：2008-09-05
申请人： Sharp Corp , シャープ株式会社
发明人： OKADA TOSHINORI , SAKAGAMI HIDEKAZU , UNEYAMA KAZUHIRO , TSUBOI TOSHIKI
IPC分类号： C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus and a vapor deposition method which prevent the clogging of gas discharge holes in a shower head, consequently suppress the occurrence of variance in reaction gas flow to be fed, and thereby securing film uniformity on the substrate to be processed and film reproducibility.
SOLUTION: An MOCVD (Metal Organic Chemical Vapor Deposition) apparatus 10 includes: the shower head 20 in which the plurality of gas discharge holes H3, H5 are arranged; and a shower plate 30 provided opposite to the shower head 20 and in which a plurality of plate holes 31 are arranged, wherein, gas is fed from the shower head 20 through the gas discharge holes H3, H5 and the plate hole 31 of the shower plate 30 into a reaction chamber 1 to deposit a film on the substrate 3 to be processed. Either the gas discharge holes H3, H5 of the shower head 20 or the surface holes 31a on the head side in the plate holes 31 of the shower plate 30 confronted with the gas discharge holes H3, H5 of the shower head 20 is larger than the other.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种防止喷淋头中的气体排出孔堵塞的气相沉积装置和气相沉积方法，从而抑制反馈气体流动的变化的发生，从而确保膜待处理基板上的均匀性和膜再现性。解决方案：MOCVD（金属有机化学气相沉积）装置10包括：排列多个气体排出孔H3，H5的喷淋头20; 以及与喷淋头20相对设置的喷淋板30，其中配置有多个板孔31，其中，从淋浴头20通过排气孔H3，H5和淋浴器的板孔31供给气体板30进入反应室1，以在要处理的基板3上沉积膜。喷淋头20的排气孔H3，喷淋头20的气体排出孔H3，喷淋头20的排气孔H3，H5的喷孔板31的喷孔31的喷头侧的表面孔31a均大于其他。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2008311507A Vapor growth device, and vapor growth method 有权
标题翻译：蒸气生长装置和蒸汽生长方法
公开(公告)号：JP2008311507A
公开(公告)日：2008-12-25
申请号：JP2007159024
申请日：2007-06-15
申请人： Sharp Corp , シャープ株式会社
发明人： SHIMIZU KAZUHISA , UNEYAMA KAZUHIRO , SAKAGAMI HIDEKAZU , TANAKA NOBUMASA , OKADA TOSHINORI
IPC分类号： H01L21/205 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide a vapor growth device and a vapor growth method that form thin films with uniform characteristics on a plurality of substrates.
SOLUTION: The vapor growth device 10 includes a reaction chamber 11, a susceptor 22 installed in the reaction chamber 11, and a gas inlet pipe 13 which introduces a plurality of kinds of gas. The susceptor 22 includes a peripheral part holding the plurality of substrates 25 and a center part enclosed with the peripheral part. The gas inlet pipe 13 has a multiple-pipe structure for separating and supplying the plurality of kinds of gas. The gas inlet pipe 13 includes an intermediate multiple-pipe 16 for making gas flow toward the center part 22t and gas redirection portions 17 for redirecting the gas flowing in the intermediate multiple-pipe 16 and making the gas flow from the center part to the peripheral part of the susceptor 22. The gas flows in the intermediate multiple-pipe 16 from directions different from the flowing direction of the gas in the intermediate multiple-pipe 16. The vapor growth device 10 is further equipped with a straightening vane 41 disposed for the intermediate multiple-pipe 16.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供在多个基板上形成具有均匀特性的薄膜的气相生长装置和气相生长方法。解决方案：气相生长装置10包括反应室11，安装在反应室11中的基座22和引入多种气体的气体导入管13。基座22包括保持多个基板25的周边部分和与周边部分包围的中心部分。气体导入管13具有用于分离供给多种气体的多管结构。气体入口管13包括用于使气体朝向中心部22t流动的中间多管16和用于重新引导在中间多管16中流动的气体的气体重定向部17，并使气体从中心部流向周边气体在中间多重管16中从气体的流动方向不同的方向在中间多管16内流动。气相生长装置10还配有矫直叶片41，中间多管16.版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2003295698A Image forming apparatus and image forming method 有权
标题翻译：图像形成装置和图像形成方法
公开(公告)号：JP2003295698A
公开(公告)日：2003-10-15
申请号：JP2002104367
申请日：2002-04-05
申请人： Sharp Corp , シャープ株式会社
发明人： ODA AYUMI , KO KYOSUKE , MANABE NOBUO , SAKAGAMI HIDEKAZU , TOMITA MICHIO
IPC分类号： B41J29/38 , G03G15/00 , G03G21/00 , H04N1/40
摘要： PROBLEM TO BE SOLVED: To provide an image forming apparatus which can easily adjust a deviation of an image forming position with respect to a recording sheet even when peripheral apparatuses are mounted. SOLUTION: The image forming apparatus is provided with an image forming part for forming a picture on the recording sheet on the basis of picture information and a control part setting the position of the picture formed on the recording sheet and is capable of selectively mounting at least one peripheral apparatus for picture formation. Therein, the control part calculates the deviation amount of the position of the picture with respect to the recording sheet on the basis of the positional information of the picture formed on the recording sheet by an image forming part and the positional information about the picture formation of the peripheral apparatus and the position of the picture formed on the recording sheet is corrected on the basis of the deviation amount which is obtained. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供即使在安装了周边设备时也能够容易地调整图像形成位置相对于记录纸的偏差的图像形成装置。解决方案：图像形成装置设置有用于基于图像信息在记录纸上形成图像的图像形成部分和设置记录纸上形成的图像的位置的控制部分，并且能够选择性地安装至少一个用于图像形成的外围设备。其中，控制部分基于通过图像形成部分在记录纸上形成的图像的位置信息和关于图像形成的位置信息来计算图像相对于记录纸张的位置的偏移量基于获得的偏差量来校正外围设备和形成在记录片材上的图像的位置。版权所有（C）2004，JPO

8. 发明专利

JP2014052291A Gain calibration sample, film thickness measurement device, and gain calibration method 审中-公开
标题翻译：增益校准样品，薄膜厚度测量装置和增益校准方法
公开(公告)号：JP2014052291A
公开(公告)日：2014-03-20
申请号：JP2012197074
申请日：2012-09-07
申请人： Sharp Corp , シャープ株式会社
发明人： SAKAGAMI HIDEKAZU , HARADA TOKUMI , YAMAWAKI CHIAKI
IPC分类号： G01B15/02
CPC分类号： G01B15/02
摘要： PROBLEM TO BE SOLVED: To provide a gain calibration sample which enables accurate height adjustment of a measuring head.SOLUTION: A gain calibration sample (60) has a height adjustment part (61) and a gain adjustment part (62). The height adjustment part (61) is a part for adjusting the height of a measuring head by measurement of a displacement sensor. The gain adjustment part (62) is a part for adjusting a gain of the measuring head.
摘要翻译：要解决的问题：提供一种增益校准样品，其能够精确地测量头部的高度调节。解决方案：增益校准样品（60）具有高度调节部分（61）和增益调节部分（62）。高度调节部（61）是用于通过位移传感器的测量来调整测量头的高度的部分。增益调整部（62）是用于调整测量头的增益的部分。

9. 发明专利

JP2014048275A Off-set quantity calibration sample and film thickness measurement device 审中-公开
标题翻译： OFF-SET数量校准样品和薄膜厚度测量装置
公开(公告)号：JP2014048275A
公开(公告)日：2014-03-17
申请号：JP2012194369
申请日：2012-09-04
申请人： Sharp Corp , シャープ株式会社
发明人： SAKAGAMI HIDEKAZU , HARADA TOKUMI , YAMAWAKI CHIAKI
IPC分类号： G01B21/02 , G01B11/00 , G01B15/02
CPC分类号： G01B11/00 , G01B15/02 , G01B21/02
摘要： PROBLEM TO BE SOLVED: To provide an off-set quantity calibration sample which makes it possible to calibrate the positions of two kinds of measuring apparatuses and save time and effort of calibration operation.SOLUTION: An off-set quantity calibration sample (70) includes a first off-set quantity detection part (71) and a second off-set quantity detection part (72). The first off-set quantity detection part (71) is a part for obtaining positional relationship between a camera and a measuring head. The second off-set quantity detection part (72) is a part for obtaining positional relationship between the camera and a displacement sensor.
摘要翻译：要解决的问题：提供一种偏移量校准样品，其可以校准两种测量装置的位置，并节省校准操作的时间和精力。解决方案：偏移量校准样品（70）包括第一偏移量检测部（71）和第二偏移量检测部（72）。第一偏移量检测部（71）是用于获得照相机和测量头之间的位置关系的部分。第二偏移量检测部（72）是用于获得照相机和位移传感器之间的位置关系的部分。

10. 发明专利

JP2013093514A Vapor growth device 审中-公开
标题翻译：蒸气生长装置
公开(公告)号：JP2013093514A
公开(公告)日：2013-05-16
申请号：JP2011236002
申请日：2011-10-27
申请人： Sharp Corp , シャープ株式会社
发明人： YASUFUKU KIYOSHI , SAKAGAMI HIDEKAZU , KOJIMA HIROMUTSU
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： C23C16/45561 , C23C16/45565 , C23C16/52
摘要： PROBLEM TO BE SOLVED: To adjust the mixing ratio and flow rate of a material gas in each of a plurality of regions on a susceptor.SOLUTION: The vapor growth device comprises: a susceptor 120 on which a processed substrate 10 is mounted; a shower head 130 supplying a plurality of material gases onto the processed substrate 10; a plurality of mixing pipes introducing a predetermined number of material gases out of the plurality of material gases to the shower head 130 while mixing; and a plurality of gas branch mechanisms feeding each of the plurality of material gases to any one of the plurality of mixing pipes while adjusting the flow rate and branching. The shower head 130 sprays a plurality of mixed gases mixed, respectively, in the plurality of mixing pipes to a plurality of regions on the susceptor. In each of the plurality of mixed gases, the concentration and flow rate each of the plurality of predetermined material gases are adjusted.
摘要翻译：要解决的问题：调节基座上的多个区域中的每一个中的材料气体的混合比和流量。解决方案：气相生长装置包括：基座120，其上安装有经处理的基板10; 将多个原料气体供给到处理过的基板10上的喷头130; 多个混合管，在混合时将多个原料气体中的预定数量的原料气体引入淋浴头130; 以及多个气体分支机构，其将多个材料气体中的每一个输送到多个混合管中的任何一个，同时调节流量和分支。淋浴头130将分别混合在多个混合管中的多个混合气体喷射到基座上的多个区域。在多个混合气体中的每一个中，调整多种预定材料气体中的每一种的浓度和流量。版权所有（C）2013，JPO＆INPIT

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