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1. 发明专利

JP2013245812A Heat insulator 审中-公开
标题翻译：热绝缘子
公开(公告)号：JP2013245812A
公开(公告)日：2013-12-09
申请号：JP2012122562
申请日：2012-05-30
申请人： Sharp Corp , シャープ株式会社
发明人： OGAKI HISASHI , FURUKAWA KAZUHIKO , ADACHI YUSUKE
IPC分类号： F16L59/06
摘要： PROBLEM TO BE SOLVED: To achieve a heat insulator capable of maintaining good heat insulation performance even when used in a high temperature area.SOLUTION: A heat insulator 1 is the heat insulator including a first enclosing member 2, a second enclosing member 3, and a core 4. The first enclosing member 2 and the second enclosing member 3 are formed of a metal material. The core 4 is held between the first enclosing member 2 and the second enclosing member 3. The first enclosing member 2 includes a cushioning part 9 which absorbs the effect of thermal expansion.
摘要翻译：要解决的问题：实现即使在高温区域中使用时也能够保持良好隔热性能的隔热材料。散热器1：隔热件1是包括第一封闭构件2，第二封闭构件3和芯体4.第一封闭构件2和第二封闭构件3由金属材料形成。芯4保持在第一封闭构件2和第二封闭构件3之间。第一封闭构件2包括吸收热膨胀效应的缓冲部9。

2. 发明专利

JP2009154091A Exhaust gas treatment apparatus, exhaust gas treating method, and thin film forming device 审中-公开
标题翻译：排气处理装置，排气处理方法和薄膜成型装置
公开(公告)号：JP2009154091A
公开(公告)日：2009-07-16
申请号：JP2007335223
申请日：2007-12-26
申请人： Sharp Corp , シャープ株式会社
发明人： TANAKA NOBUMASA , UNEYAMA KAZUHIRO , SAKAGAMI HIDEKAZU , ADACHI YUSUKE
IPC分类号： B01D53/58 , B01D53/46 , C23C16/44 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To sufficiently detoxify two or more kinds of exhaust gases. SOLUTION: An exhaust gas treatment apparatus (gas treatment apparatus) 108 is provided with a first gas treatment part 114 treating exhaust gas mainly containing a first exhaust gas, and a second gas treatment part 115 treating exhaust gas mainly containing a second exhaust gas. A first gas detoxifying part 116 is disposed upstream of the exhaust gas flow-in direction with respect to a second gas detoxifying part 117, in the first gas treatment part 114, and in the second gas treatment part 115, a second gas detoxifying part 118 is disposed upstream of the exhaust gas flow-in direction with respect to a first gas detoxifying part 119. Thus, even when both of the first and second exhaust gases are contained in the exhaust gas, the exhaust gas can be sufficiently detoxified. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了充分解毒两种或更多种废气。解决方案：废气处理装置（气体处理装置）108设置有处理主要包含第一废气的废气的第一气体处理部分114和处理主要包含第二废气的废气的第二气体处理部分115 加油站。第一气体解毒部116相对于第二气体解毒部117，第一气体处理部114和第二气体处理部115配置在废气流入方向上游侧的第二气体解毒部118 相对于第一气体解毒部119配置在废气流入方向的上游侧。因此，即使在废气中含有第一和第二废气，也能够充分地排出废气。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009105165A Vapor phase growth device, and method of manufacturing semiconductor device 有权
标题翻译：蒸气相生长装置及制造半导体装置的方法
公开(公告)号：JP2009105165A
公开(公告)日：2009-05-14
申请号：JP2007274343
申请日：2007-10-22
申请人： Sharp Corp , シャープ株式会社
发明人： WAKASA KANAKO , UNEYAMA KAZUHIRO , SAKAGAMI HIDEKAZU , TANAKA NOBUMASA , OKADA TOSHINORI , ADACHI YUSUKE
IPC分类号： H01L21/205 , C23C16/455 , H01L31/04 , H01L33/32 , H01S5/323 , H01S5/343
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth device uniforming a gas flow supplied to a growth chamber from a gas discharge hole when at least two reaction gases are supplied into the growth chamber by using a shower plate; and a method of manufacturing a semiconductor device. SOLUTION: On the shower plate 21, group III system gas buffer areas 23b and group V system gas buffer areas 24b respectively isolated from one another for filling a group III system gas and a group V system gas, are stacked in this order. A plurality of group V system gas supply pipes 24c communicating with a plurality of group V system gas discharge holes H5 on the shower plate 21 from the group V system gas buffer areas 24b are formed in the group III system gas buffer areas 23b by penetrating them. In the group V system gas buffer areas 24b, a plurality of dummy columns 25c are formed at the same plane position as that of a plurality of group III system gas discharge holes H3. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种气相生长装置，当通过使用淋浴板将至少两种反应气体供应到生长室中时，气体生长装置使从气体排放孔供给到生长室的气流均匀化; 以及半导体装置的制造方法。解决方案：在喷淋板21上，分别相互隔离用于填充组III系统气体和V组系统气体的组III系统气体缓冲区域23b和组V系统气体缓冲区域24b以此顺序堆叠。在组III系统气体缓冲区域23b中通过穿透它们而形成多个V组系统气体供给管24c，该组V系统气体供给管24c与组V系统气体缓冲区域24b在喷淋板21上与多个V组系统气体排出孔H5连通。在组V系气体缓冲区域24b中，多个虚拟列25c形成在与多个组III系统气体排出孔H3相同的平面位置处。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2014009723A Heat insulating material and heating device including the same 审中-公开
标题翻译：加热绝热材料和加热装置，包括它们
公开(公告)号：JP2014009723A
公开(公告)日：2014-01-20
申请号：JP2012145241
申请日：2012-06-28
申请人： Sharp Corp , シャープ株式会社
发明人： OGAKI HISASHI , FURUKAWA KAZUHIKO , ADACHI YUSUKE
IPC分类号： F16L59/02 , F16L59/06
摘要： PROBLEM TO BE SOLVED: To provide a heat insulating material capable of keeping superior heat insulating performance even when used in a high temperature section.SOLUTION: The heat insulating material includes a first outer packaging material, a second packaging material and a core material. The first packaging material and the second packaging material are composed of a metallic material. The core material is held between the first outer packaging material and the second outer packaging material. The first outer packaging material has buffering portions for absorbing deformation of the heat insulating material due to thermal expansion of the second outer packaging material. The buffering portions 5 can be formed by repeating mountain-folding and valley-folding from four corners of the outer packaging material 2. The first outer packaging material is smaller in expansion than the second outer packaging material in contact with the high temperature section, and a difference in extension amount therebetween causes warpage of the heat insulating material. The buffering portions 5 have a role to relax the warpage.
摘要翻译：要解决的问题：提供即使在高温部分中使用时也能够保持优异的绝热性能的绝热材料。解决方案：隔热材料包括第一外包装材料，第二包装材料和芯材料。第一包装材料和第二包装材料由金属材料构成。芯材保持在第一外包装材料和第二外包装材料之间。第一外包装材料具有用于吸收由于第二外包装材料的热膨胀导致的隔热材料的变形的缓冲部分。缓冲部分5可以通过从外包装材料2的四个角重复山折和谷折而形成。第一外包装材料的膨胀小于与高温部分接触的第二外包装材料，并且其间的延伸量的差异导致绝热材料翘曲。缓冲部分5具有松弛翘曲的作用。

5. 发明专利

JP2011233777A Vapor phase growth device, vapor phase growth method, and method of manufacturing semiconductor element 有权
标题翻译：蒸气相生长装置，蒸汽相生长方法及制造半导体元件的方法
公开(公告)号：JP2011233777A
公开(公告)日：2011-11-17
申请号：JP2010103984
申请日：2010-04-28
申请人： Sharp Corp , シャープ株式会社
发明人： ADACHI YUSUKE , SAKAGAMI HIDEKAZU
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： H01L21/02538 , C23C16/301 , C23C16/45565 , C23C16/45572 , C23C16/45574 , C30B25/14 , C30B29/40 , H01L21/02579 , H01L21/0262
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth device, a vapor phase growth method, and a method of manufacturing a semiconductor element in which a metal material susceptible to solidification can be introduced effectively into a reactor without adhering to a shower head or the side surface of piping and doped.SOLUTION: Inside diameter (W1) of group V material gas introduction piping 42 is set larger than the outside diameter (W2) of group III material gas introduction piping 44, and the group III material gas introduction piping 44 is inserted into the group V material gas introduction piping 42 in one-to-one correspondence. With such a structure, the group III material gas introduction piping 44 is prevented from being cooled by a cooling mechanism and solidification of a metal material to the wall surface of the piping can be minimized.
摘要翻译：要解决的问题：为了提供气相生长装置，气相生长方法和制造半导体元件的方法，其中可以将易凝固的金属材料有效地引入反应器而不粘附到淋浴头或管道的侧面和掺杂。解决方案：组V材料气体导入管42的内径（W1）设定为大于III类原料气体导入配管44的外径（W2），将III族原料气体导入配管44插入 V组材料气体导入管42一一对应。通过这样的结构，能够防止III族原料气体导入配管44被冷却机构冷却，能够使配管的壁面的金属凝固化最小化。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2010109297A Tray, vapor phase growth equipment, and vapor phase growth method 有权
标题翻译：托盘，蒸汽相生长设备和蒸汽相生长方法
公开(公告)号：JP2010109297A
公开(公告)日：2010-05-13
申请号：JP2008282482
申请日：2008-10-31
申请人： Sharp Corp , シャープ株式会社
发明人： ADACHI YUSUKE , SAKAGAMI HIDEKAZU
IPC分类号： H01L21/683 , C23C16/44 , C23C16/458 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a tray which prevents a decrease of effective stacking area of a workpiece, whose film thickness uniformity is not damaged by intrusion of an reaction gas to susceptor, and which can decrease a frequency of maintenance of a susceptor, and to provide a vapor phase growth equipment and a vapor phase growth method. SOLUTION: The workpiece 24 is transferred while being mounted, and is located on a susceptor 7. The tray includes a substrate mounting plate 21 which has at least one recess 21c on its surface and holds the workpiece 24 while it is located in the recess 21c, a plate transfer hold member 22 which has a step 22b that holds the surrounding extension 21a of the substrate mounting plate 21 from the lower side when transferring the plate 21, and a cover plate 23 which covers over the periphery of the substrate mounting plate 21 and the crowed out part of periphery of the substrate mounting plate 21 in the plate transfer hold member 22. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种防止由于反应气体侵入基座而使其膜厚均匀性不被损坏的工件的有效堆积面积减小的托盘，并且可以降低维护的频率感受器，并提供气相生长设备和气相生长方法。解决方案：工件24在安装时传送并位于基座7上。托盘包括基板安装板21，该基板安装板21在其表面上具有至少一个凹部21c并且在工件24位于其中时保持工件24 凹部21c，板转移保持构件22，其具有在传送板21时从下侧保持基板安装板21的周围延伸部21a的台阶22b以及覆盖基板周边的盖板23 安装板21和基板安装板21的周边的挤出部分在板转移保持构件22中。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2014195821A 加工装置审中-公开
标题翻译：加工设备
公开(公告)号：JP2014195821A
公开(公告)日：2014-10-16
申请号：JP2013073179
申请日：2013-03-29
申请人：シャープ株式会社 , Sharp Corp
发明人： MINAMI KOJI , INUI HITOSHI , ADACHI YUSUKE
IPC分类号： B23K26/352 , B23K26/04 , B23K26/046 , C03C23/00
CPC分类号： B23K26/38 , B23K26/40 , B23K2203/50 , C03B33/0222 , Y02P40/57
摘要：【課題】端面近傍部分の欠陥の増大を引起すことなく、加工対象物の強度を向上させることができる加工装置を提供する。【解決手段】加工対象物3の表面4に光を照射することによって加工対象物3の端面加工を行う加工装置1は、光源11から出射された光を、加工対象物3の表面4上の加工対象物3の端面5から所定距離Dだけ内側の位置に、導光部12によって導光して照射させる。加工対象物3の表面4上における光の照射位置21は、欠陥率の高い加工対象物の端面近傍部分よりも内側の位置である。加工対象物3に対する光照射と並行して、加工装置1は、導光部3から照射された光の照射方向Zに垂直な方向Yに、加工対象物3を相対的に移動させる。この結果、加工対象物3の表面4上の端面5から所定距離Dだけ内側の位置に、線状の加工構造24が形成される。【選択図】図1
摘要翻译：要解决的问题：提供一种能够提高被处理物的强度而不会引起端面附近的缺陷的增加的处理装置。解决方案：处理装置1，其处理待处理的物体3的端面，照射待处理物体3的表面4，将由光源11发射的光通过导光部12引导到从物体3的端面5向内侧的预定距离D的位置在要处理的物体3的表面4上进行处理以照射表面。待处理对象3的表面4上的光的照射位置21是缺陷率高的待处理对象的端面附近的位置。在与光照射待处理物体3并行的情况下，处理装置1使与被照射方向Z垂直的方向Y相对地处理从被导光部3射出的光的照射方向Z。在处理对象物3的表面4上的距离端面5的预定距离D的位置形成线状处理结构24。

8. 发明专利

JP2013070016A Nitride semiconductor crystal growth device and growth method of the same 审中-公开
标题翻译：氮化物半导体晶体生长装置及其生长方法
公开(公告)号：JP2013070016A
公开(公告)日：2013-04-18
申请号：JP2012040719
申请日：2012-02-27
申请人： Sharp Corp , シャープ株式会社
发明人： FUNAKI TAKESHI , TSUNASAWA HIROSHI , TANAKA YASUHIRO , ADACHI YUSUKE
IPC分类号： H01L21/205 , C23C16/34
摘要： PROBLEM TO BE SOLVED: To efficiently form a film of a third group nitride semiconductor on a substrate and improve uniformity of the formed film.SOLUTION: A nitride semiconductor crystal growth device 100 comprises: a nitrogen-containing gas supply port 8; a third group metal containing gas supply port 9; and a catalyst material 1 which decomposes a nitrogen-containing gas 6 and generates an active species. The catalyst material 1 is provided inside and such of the nitrogen-containing gas supply port 8. Both of the nitrogen-containing gas supply port 8 and the third group metal containing gas supply port 9 normally face a substrate surface.
摘要翻译：要解决的问题：为了有效地在基板上形成第三族氮化物半导体的膜，并提高成膜的均匀性。解决方案：氮化物半导体晶体生长装置100包括：含氮气体供给口8; 第三组含金属的气体供给口9; 以及分解含氮气体6并产生活性物质的催化剂材料1。催化剂材料1设置在内部和内部的含氮气体供给口8内。含氮气体供给口8和第三组金属含有气体供给口9均通常面向基板表面。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2011066168A Vapor-phase growth device, and vapor-phase growth method 审中-公开
标题翻译：蒸气相生长装置和蒸汽相生长方法
公开(公告)号：JP2011066168A
公开(公告)日：2011-03-31
申请号：JP2009215059
申请日：2009-09-16
申请人： Sharp Corp , シャープ株式会社
发明人： ADACHI YUSUKE , SAKAGAMI HIDEKAZU , WAKASA KANAKO
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a vapor-phase growth device capable of securing a uniform flow of purge gas with respect to all directions around a rotary shaft without depending on accuracy in assembly, and protecting device components such as a heater and the rotary shaft from generation of extraneous matter due to a material gas and corrosion due to gas, and a vapor-phase growth method.
SOLUTION: In this vapor-phase growth device, a substrate 3 is heated by a heater 42 while rotating a rotary shaft 5 attached to a susceptor 4 in a reactor to perform film formation by a material gas on the substrate 3 and the like. A heater unit 40A for housing at least a part of the rotary shaft 5 and the heater therein is arranged in the reactor, and a purge gas is exhausted into the reactor from a purge gas exhaust port 46A by introducing the purge gas into the heater unit 40A. The purge gas exhaust port 46A is formed by a space between a heater cover 44 fixed and erected on a heater support base 41 constituting at least a floor of the heater unit 40A and supported by the rotary shaft 5 and the susceptor 4.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种气相生长装置，其能够在不依赖于组装精度的情况下确保围绕旋转轴的所有方向的吹扫气体的均匀流动，并且保护装置部件如加热器和旋转轴由于材料气体而产生的外来物质和由气体引起的腐蚀，以及气相生长法。解决方案：在该气相生长装置中，基板3被加热器42加热，同时旋转安装在反应器中的基座4上的旋转轴5，以通过基板3上的原料气体进行成膜，喜欢。用于将至少一部分旋转轴5和其中的加热器容纳在其中的加热器单元40A布置在反应器中，并且吹扫气体通过将吹扫气体引入加热器单元而从净化气体排出口46A排出到反应器中 40A。净化气体排气口46A由固定并竖立在构成加热器单元40A的至少一个加热器单元40A的底板的加热器支撑基座41上的加热器盖44之间的空间形成并由旋转轴5和基座4支撑。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2009249651A Vapor deposition apparatus and vapor deposition method 审中-公开
标题翻译：蒸气沉积装置和蒸气沉积方法
公开(公告)号：JP2009249651A
公开(公告)日：2009-10-29
申请号：JP2008095516
申请日：2008-04-01
申请人： Sharp Corp , シャープ株式会社
发明人： ADACHI YUSUKE , OKADA TOSHINORI
IPC分类号： C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus which can prevent fixing of a cover plate with a shower plate from occurring due to a reaction product produced in a gap part, when the cover plate is provided on the shower plate, and to provide a vapor deposition method therefor.
SOLUTION: The cover plate 26 which covers the shower plate 21 and has a gas through-hole H2 that has the same center as a gas spouting hole H1 of the shower plate 21 is provided on the surface side of the shower plate 21, which opposes to a substrate 3 to be film-formed so as to form a gap between itself and the shower plate 21. A recess SO and a salient CT which form a concavoconvex shape for inhibiting a gas from flowing into the gap are provided on the surface of the shower plate 21 opposing to the substrate 3 to be film-formed and the surface of the cover plate 26 opposing to the shower plate 21.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：为了提供一种能够防止由于在间隙部产生的反应产物而发生的具有喷淋板的盖板的固定的气相沉积设备，当在喷淋板上设置盖板时，并提供其蒸镀方法。解决方案：在淋浴板21的表面侧设置有覆盖喷淋板21并且具有与喷淋板21的气体喷出孔H1具有相同中心的气体通孔H2的盖板26 ，其与要成膜的基板3相对，以在其自身和淋浴板21之间形成间隙。形成用于抑制气体流入间隙的凹凸形状的凹部SO和突出CT设置在淋浴板21的与被成膜的基板3相对的表面和盖板26的与喷淋板21相对的表面。（C）2010，JPO＆INPIT

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