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1. 发明专利

JP2013245812A Heat insulator 审中-公开
标题翻译：热绝缘子
公开(公告)号：JP2013245812A
公开(公告)日：2013-12-09
申请号：JP2012122562
申请日：2012-05-30
申请人： Sharp Corp , シャープ株式会社
发明人： OGAKI HISASHI , FURUKAWA KAZUHIKO , ADACHI YUSUKE
IPC分类号： F16L59/06
摘要： PROBLEM TO BE SOLVED: To achieve a heat insulator capable of maintaining good heat insulation performance even when used in a high temperature area.SOLUTION: A heat insulator 1 is the heat insulator including a first enclosing member 2, a second enclosing member 3, and a core 4. The first enclosing member 2 and the second enclosing member 3 are formed of a metal material. The core 4 is held between the first enclosing member 2 and the second enclosing member 3. The first enclosing member 2 includes a cushioning part 9 which absorbs the effect of thermal expansion.
摘要翻译：要解决的问题：实现即使在高温区域中使用时也能够保持良好隔热性能的隔热材料。散热器1：隔热件1是包括第一封闭构件2，第二封闭构件3和芯体4.第一封闭构件2和第二封闭构件3由金属材料形成。芯4保持在第一封闭构件2和第二封闭构件3之间。第一封闭构件2包括吸收热膨胀效应的缓冲部9。

2. 发明专利

JP2012248818A Vapor phase growth apparatus and vapor phase growth method 审中-公开
标题翻译：蒸气相生长装置和蒸汽相生长方法
公开(公告)号：JP2012248818A
公开(公告)日：2012-12-13
申请号：JP2011121977
申请日：2011-05-31
申请人： Sharp Corp , シャープ株式会社
发明人： OGAKI HISASHI
IPC分类号： H01L21/205 , C23C16/458
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus and a vapor phase growth method for depositing a film on a substrate with uniform thickness.SOLUTION: An MOCVD apparatus 10 comprises a susceptor 21 having a top face 21a placed in a processing chamber 12 and rotating at a speed of 800 rpm or higher, and a shower head 31 having a plurality of gas discharge ports 44, 49 at positions facing the top face 21a of the susceptor 21 and supplying a material gas to the processing chamber 12 through the plurality of gas discharge ports 44, 49. A recess 22 in which a substrate 90 is placed is formed in the top face 21a of the susceptor 21. The substrate is placed so that a clearance is formed between the substrate and the inner wall of the recess 22, and a vapor phase growth face of the substrate is located at a position higher than the top face 21a of the susceptor 21.
摘要翻译：要解决的问题：提供一种气相生长装置和用于在均匀厚度的基板上沉积膜的气相生长方法。解决方案：MOCVD装置10包括具有放置在处理室12中并以800rpm或更高速度旋转的顶面21a的基座21和具有多个排气口44,49的喷头31 在与基座21的顶面21a相对的位置上，通过多个气体排出口44,49向原料气体12供给原料气体。在基板90的上表面21a形成有设置有基板90的凹部22 基板21.基板被放置成使得在基板和凹部22的内壁之间形成间隙，并且基板的气相生长面位于比基座21的顶面21a高的位置。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2010238831A Vapor phase deposition device, and vapor phase deposition method 审中-公开
标题翻译：蒸气相沉积装置和蒸汽相沉积方法
公开(公告)号：JP2010238831A
公开(公告)日：2010-10-21
申请号：JP2009083813
申请日：2009-03-31
申请人： Sharp Corp , シャープ株式会社
发明人： YASUFUKU KIYOSHI , WAKASA KANAKO , OGAKI HISASHI
IPC分类号： H01L21/205 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To solve the following problem: in a device having a structure disclosed by conventional technology, disposition of a plurality of gas discharge holes provided in a shower head matches up to deposition of gas supply pipes, disposition of the gas supply pipes is restricted for securing a cooling passage, and disposition of the gas discharge holes is thereby also restricted, and the gas discharge holes can not be disposed at optional positions taking into consideration of film uniformity on a substrate to be deposited.
SOLUTION: In this vapor phase deposition device, a space is provided between the contact surfaces of a shower head and a shower plate, and thereby, a gas passed through the gas discharge holes passes the space, and is discharged from plate holes provided at positions shifted from the gas discharge holes. Thereby, the plate holes to discharge the gas can be provided without being restricted by the positions of the gas discharge holes of the shower head, variations in the flow of a reaction gas supplied is suppressed, and film uniformity on the substrate to be processed can be secured.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决以下问题：在具有传统技术公开的结构的装置中，设置在喷淋头中的多个气体排出孔的配置与气体供应管的沉积匹配，配置气体供给管被限制用于固定冷却通道，从而也限制了气体排出孔的布置，并且考虑到待沉积的基板上的膜均匀性，气体排出孔不能设置在任选位置。解决方案：在该气相沉积装置中，在喷淋头和喷淋板的接触表面之间设置空间，通过气体排出孔的气体通过该空间，从板孔排出设置在从气体排出孔移位的位置。由此，可以不受喷淋头的气体排出孔的位置的限制而提供排出气体的板孔，抑制供给的反应气体的流动的变化，对被处理基板的膜均匀性可以被安全。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2007326749A Silicon purification apparatus and silicon purification method 审中-公开
标题翻译：硅氧烷纯化装置和硅氧烷纯化方法
公开(公告)号：JP2007326749A
公开(公告)日：2007-12-20
申请号：JP2006160318
申请日：2006-06-08
申请人： Sharp Corp , シャープ株式会社
发明人： OGAKI HISASHI , NAKAMURA TSUNEO , ANDO HIROYUKI , FUKUYAMA TOSHIAKI
IPC分类号： C01B33/037
摘要： PROBLEM TO BE SOLVED: To provide a silicon purification apparatus and a silicon purification method capable of removing high-vapor pressure impurities having a vapor pressure higher than that of silicon and metal impurities from a silicon raw material at the same time. SOLUTION: In the silicon purification apparatus 1, the inside of a melting furnace 11 is kept in vacuum state by a vacuum pump 21, a silicon raw material 10 housed in a crucible 12 in the melting furnace 11 is heated and melted by a heater 13 to be a molten silicon 10a, a cooling body 14 is immersed in the molten silicon 10a to cool the molten silicon 10a, and purified silicon 30 is crystallized out at a silicon crystallizing-out part 29 of the cooling body 14. The heater 13 is controlled by a control means 18 so that the temperature of the silicon raw material 10 is at a temperature of 1,415-1,500°C. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供能够同时从硅原料中除去蒸气压高于硅原子和金属杂质的高蒸汽压杂质的硅纯化装置和硅纯化方法。解决方案：在硅精制设备1中，通过真空泵21将熔炉11的内部保持在真空状态，将容纳在熔炉11中的坩埚12中的硅原料10加热熔化，作为熔融硅10a的加热器13，将冷却体14浸入熔融硅10a中以冷却熔融硅10a，并且在冷却体14的硅结晶部分29处将纯化的硅30结晶出来。加热器13由控制装置18控制，使得硅原料10的温度处于1415-1500℃的温度。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2004042433A Manufacturing method for nozzle plate, and ink jet head 审中-公开
公开(公告)号：JP2004042433A
公开(公告)日：2004-02-12
申请号：JP2002202778
申请日：2002-07-11
申请人： Sharp Corp , シャープ株式会社
发明人： DEGUCHI HARUHIKO , OGAKI HISASHI
IPC分类号： B41J2/135
摘要： PROBLEM TO BE SOLVED: To improve the working shape precision of a base material and a water repellent film in manufacturing a nozzle plate.
SOLUTION: The manufacturing method has a first working process in which a nozzle plate constituting member with the water repellent film 2 of at least one or more layers set on the base 1 is worked from the base 1 side, and the base material 1 is mainly etched; and a second working process in which the water repellent film 2 is mainly etched with the use of plasma having oxygen after the first working process is finished.
COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2014009723A Heat insulating material and heating device including the same 审中-公开
标题翻译：加热绝热材料和加热装置，包括它们
公开(公告)号：JP2014009723A
公开(公告)日：2014-01-20
申请号：JP2012145241
申请日：2012-06-28
申请人： Sharp Corp , シャープ株式会社
发明人： OGAKI HISASHI , FURUKAWA KAZUHIKO , ADACHI YUSUKE
IPC分类号： F16L59/02 , F16L59/06
摘要： PROBLEM TO BE SOLVED: To provide a heat insulating material capable of keeping superior heat insulating performance even when used in a high temperature section.SOLUTION: The heat insulating material includes a first outer packaging material, a second packaging material and a core material. The first packaging material and the second packaging material are composed of a metallic material. The core material is held between the first outer packaging material and the second outer packaging material. The first outer packaging material has buffering portions for absorbing deformation of the heat insulating material due to thermal expansion of the second outer packaging material. The buffering portions 5 can be formed by repeating mountain-folding and valley-folding from four corners of the outer packaging material 2. The first outer packaging material is smaller in expansion than the second outer packaging material in contact with the high temperature section, and a difference in extension amount therebetween causes warpage of the heat insulating material. The buffering portions 5 have a role to relax the warpage.
摘要翻译：要解决的问题：提供即使在高温部分中使用时也能够保持优异的绝热性能的绝热材料。解决方案：隔热材料包括第一外包装材料，第二包装材料和芯材料。第一包装材料和第二包装材料由金属材料构成。芯材保持在第一外包装材料和第二外包装材料之间。第一外包装材料具有用于吸收由于第二外包装材料的热膨胀导致的隔热材料的变形的缓冲部分。缓冲部分5可以通过从外包装材料2的四个角重复山折和谷折而形成。第一外包装材料的膨胀小于与高温部分接触的第二外包装材料，并且其间的延伸量的差异导致绝热材料翘曲。缓冲部分5具有松弛翘曲的作用。

7. 发明专利

JP2013172007A Vapor deposition apparatus 审中-公开
标题翻译：蒸气相生长装置
公开(公告)号：JP2013172007A
公开(公告)日：2013-09-02
申请号：JP2012035255
申请日：2012-02-21
申请人： Sharp Corp , シャープ株式会社
发明人： OGAKI HISASHI
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth device capable of film-forming a semiconductor layer containing InGaN excellent in crystallinity and high in an In composition and also preventing a substrate from being damaged.SOLUTION: An MOCVD device includes: a deposition chamber 10; a susceptor 3 which is provided in the deposition chamber 10 and holds a substrate 2; a heater 4 which heats the substrate 2; a shower head 50 which is provided so as to be opposite to the substrate 2 and jets a group III system gas and a group V system gas; a catalyst 13 which is disposed between the susceptor 3 and the shower head 50 and dissolves the group V system gas jetted by the shower head 50 to generate active species; and an ultraviolet light source 12 which excites the group V system gas jetted by the shower head 50 between the shower head 50 and the substrate 2 by emitting UV light in the direction parallel to the surface of the substrate 2.
摘要翻译：要解决的问题：提供一种气相生长装置，其能够成膜含有In结晶性优异，In组成优异的InGaN的半导体层，并且还防止了基板的损伤。解决方案：MOCVD装置包括：沉积室 10; 设置在沉积室10中并保持基板2的基座3; 加热基板2的加热器4; 喷头50，其设置成与基板2相对，并喷射III族系统气体和V族系统气体; 催化剂13，其设置在基座3和喷淋头50之间，并且溶解由淋浴头50喷射的组V系统气体以产生活性物质; 以及紫外光源12，其通过在与基板2的表面平行的方向上发射紫外光来激发由淋浴喷头50在喷头50和基板2之间喷射的V族系统气体。

8. 发明专利

JP2013055300A Restoration method of semiconductor device 审中-公开
标题翻译：半导体器件恢复方法
公开(公告)号：JP2013055300A
公开(公告)日：2013-03-21
申请号：JP2011194202
申请日：2011-09-06
申请人： Sharp Corp , シャープ株式会社
发明人： NAKAGAWA MASATOSHI , OGAKI HISASHI
IPC分类号： H01L21/302 , H01L21/306 , H01L21/308 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a restoration method of semiconductor device, capable of preventing the occurrence of a new short circuit after the restoration of a defect.SOLUTION: The restoration method includes of semiconductor device: a defect detection step for detecting a defect; and a removal processing step for removal processing of a transparent conductive film 8, a p-type gallium nitride (p-GaN) layer 5, an activation layer 4 and an n-type gallium nitride (n-GaN) layer 3 located on the top face of the defect, successively from the uppermost side. In the removal processing step, the transparent conductive film 8 is removal processed in such a manner that the droop length L of a residue R of the transparent conductive film 8 becomes shorter than the total film thickness H of the p-type gallium nitride (p-GaN) layer 5 and the activation layer 4.
摘要翻译：要解决的问题：提供一种能够防止在缺陷恢复之后出现新的短路的半导体器件的恢复方法。解决方案：恢复方法包括半导体器件：用于检测缺陷的缺陷检测步骤; 以及去除处理步骤，用于去除处理透明导电膜8，p型氮化镓（p-GaN）层5，活化层4和n型氮化镓（n-GaN）层3，其位于缺陷的顶面，从最上面依次。在去除处理步骤中，透明导电膜8被去除处理，使得透明导电膜8的残渣R的下垂长度L变得短于p型氮化镓的总膜厚度H（p -GaN）层5和活化层4.版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2013055299A Resist removal method, restoration method and element 审中-公开
标题翻译：电阻去除方法，恢复方法和元素
公开(公告)号：JP2013055299A
公开(公告)日：2013-03-21
申请号：JP2011194201
申请日：2011-09-06
申请人： Sharp Corp , シャープ株式会社
发明人： NAKAGAWA MASATOSHI , OGAKI HISASHI
IPC分类号： H01L21/027 , H01L21/302
摘要： PROBLEM TO BE SOLVED: To obtain a resist removal method capable of suppressing damage on a lower layer of a resist (for example, semiconductor layer) than ever without remaining a resist residue.SOLUTION: The resist removal method for removing a portion of a resist 3 attached to an element as a removal target is provided. A laser beam 4 having a wavelength absorbed by the resist is radiated toward the removal target so that the portion of the removal target is removal processed and a remaining portion 6 of the removal target is exposed. Further, by the removal of the exposed portion 6 by development, the portion of the resist 3 applied on the semiconductor element is removed.
摘要翻译：要解决的问题：为了获得能够抑制抗蚀剂（例如半导体层）的下层的损伤的抗蚀剂去除方法，而不残留抗蚀剂残留物。解决方案：提供用于去除附着到作为移除目标的元素的抗蚀剂3的一部分的抗蚀剂去除方法。将具有由抗蚀剂吸收的波长的激光束4朝向去除靶辐射，使得去除靶的部分被去除处理，并且去除靶的剩余部分6暴露。此外，通过显影去除暴露部分6，去除施加在半导体元件上的抗蚀剂3的部分。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2010100925A Vapor deposition apparatus and vapor deposition method 审中-公开
标题翻译：蒸气沉积装置和蒸气沉积方法
公开(公告)号：JP2010100925A
公开(公告)日：2010-05-06
申请号：JP2009033136
申请日：2009-02-16
申请人： Sharp Corp , シャープ株式会社
发明人： OGAKI HISASHI , TAKEMOTO MICHIFUMI
IPC分类号： C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus and a vapor deposition method by which the gas concentration distribution on the surface of a substrate to be treated in a growth chamber can be uniformized and the thickness of a deposition film and the compositional ratio can be improved when a raw material gas is introduced from a peripheral part of a shower head.
SOLUTION: A shower head 20 includes: an outer annular flow passage 23a for a group-III gas and an outer annular flow passage 24a for a group-V gas to each of which a raw material gas is introduced; a buffer area 23b for the group-III gas and a buffer area 24b for the group-V gas of the raw material gas, which are located in the inner side of partitions 23d, 24d with openings; and a shower plate 21 having a plurality of discharge holes H3 for the group-III gas and a plurality of discharge holes H5 for the group V gas. In the gas buffer area 23b for the group III gas, partition walls 40 for partitioning the peripheral part of the gas buffer area 23b for the group III gas into a plurality of layers of the stacking direction are provided.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种蒸镀装置和气相沉积方法，其中在生长室中待处理的基板的表面上的气体浓度分布可以均匀化，并且沉积膜的厚度和当从喷淋头的周边部分引入原料气体时，可以提高成分比。解决方案：淋浴头20包括：用于组III气体的外部环形流动通道23a和用于引入原料气体的V族气体的外部环形流动通道24a; 用于组III气体的缓冲区域23b和用于原料气体的V族气体的缓冲区域24b，其位于具有开口的分隔壁23d，24d的内侧; 以及具有用于III族气体的多个排出孔H3和用于V族气体的多个排出孔H5的喷淋板21。在组III气体的气体缓冲区域23b中，设置有用于将III族气体的气体缓冲区域23b的周边部分分割为层叠方向的多层的分隔壁40。版权所有（C）2010，JPO＆INPIT

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