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    • 3. 发明专利
    • Physical quantity sensor and electronic apparatus
    • 物理量传感器和电子设备
    • JP2013217772A
    • 2013-10-24
    • JP2012088607
    • 2012-04-09
    • Seiko Epson Corpセイコーエプソン株式会社
    • TANAKA SATORU
    • G01P15/125B81B3/00H01L29/84
    • B81B3/0018B81B3/0021
    • PROBLEM TO BE SOLVED: To provide a physical quantity sensor that can be miniaturized and can have a good noise characteristic.SOLUTION: A physical quantity sensor 100 comprises: a substrate 10; a movable body 20 which has first and second sections 20a and 20b and in which a first movable electrode portion 21 is provided in the first section 20a; beam portions 30 and 32 which support the movable body 20 so as to be able to be displaced; and a first fixed electrode portion 50 which is disposed on the substrate 10 so as to face the first movable electrode portion 21. The width of the first section 20a in a second axis Q2 direction orthogonal to a first axis Q1 direction is smaller than the width of the second section 20b in the second axis Q2 direction. The first fixed electrode portion 50 is provided at a position overlapping an end 24 of the first section 20a in the second axis Q2 direction in plan view, and is provided in a range of 0.0500X≤L≤0.816X assuming that the width of the first section 20a in the second axis Q2 direction is X and the width of a portion of the first fixed electrode portion 50 in the second axis Q2 direction overlapping the movable body 20 in plan view is L.
    • 要解决的问题:提供可以小型化并且可以具有良好噪声特性的物理量传感器。解决方案:物理量传感器100包括:基板10; 具有第一和第二部分20a和20b并且第一可动电极部分21设置在第一部分20a中的可移动体20; 梁部分30和32,其支撑可移动体20以便能够移位; 以及第一固定电极部分50,其以与第一可动电极部分21相对的方式设置在基板10上。第一部分20a在与第一轴线Q1方向正交的第二轴线Q2方向上的宽度小于宽度 在第二轴线Q2方向上的第二部分20b。 第一固定电极部分50设置在与俯视图中的第二轴线Q2方向上的第一部分20a的端部24重叠的位置处,并且设置在0.0500X≤L≤0.816X的范围内,假定 第二轴Q2方向的第一部分20a是X,并且第一固定电极部分50的在平面图中与移动体20重叠的第二轴线Q2方向上的宽度是L.
    • 4. 发明专利
    • Physical quantity sensor and electronic apparatus
    • 物理量传感器和电子设备
    • JP2013213734A
    • 2013-10-17
    • JP2012084155
    • 2012-04-02
    • Seiko Epson Corpセイコーエプソン株式会社
    • TANAKA SATORU
    • G01P15/125B81B3/00G01C19/5747H01L29/84
    • B81B3/0021B81B7/0006B81B2203/0163
    • PROBLEM TO BE SOLVED: To provide a physical quantity sensor capable of reducing its size and preventing electrostatic force from being applied to a spring part.SOLUTION: A physical quantity sensor 100 according to the present invention comprises a substrate 10, a fixed part 23 fixed to the substrate 10, and a movable electrode part 50, and includes: a movable body 26 capable of being displaced in a first axis direction; fixed electrode parts 52, 54 provided on the substrate 10 and facing the movable electrode part 50; a spring part 30 that connects the fixed part 23 to an end part 26a of the movable body 26 and that has a first extension part 31a extending from the fixed part 23 along a second axis intersecting the first axis direction, a turning part 31b connected to the first extension part 31a, and a second extension part 31c extending from the turning part 31b along the second axis; and a wall part 40 provided outside the first extension part 31a and the turning part 31b of the spring part 30 in a planar view. The spring part 30 and the wall part 40 are electrically connected.
    • 要解决的问题:提供能够减小其尺寸并防止静电力施加到弹簧部件的物理量传感器。解决方案:根据本发明的物理量传感器100包括基板10,固定部分23固定 基板10和可动电极部50,具有能够沿第一轴方向位移的可动体26, 设置在基板10上并面向可动电极部50的固定电极部52,54; 将固定部23与可动体26的端部26a连接并具有从固定部23沿着与第一轴方向交叉的第二轴延伸的第一延伸部31a的弹簧部30,与第一延伸部31a连接的转动部31b 第一延伸部31a和从转动部31b沿着第二轴延伸的第二延伸部31c; 以及在平面图中设置在第一延伸部31a和弹簧部30的转动部31b的外侧的壁部40。 弹簧部分30和壁部分40电连接。
    • 5. 发明专利
    • Piezoelectric vibration device, method of manufacturing the same, and method of adjusting resonant frequency
    • 压电振动装置,其制造方法和调谐谐振频率的方法
    • JP2012065304A
    • 2012-03-29
    • JP2011093343
    • 2011-04-19
    • Seiko Epson Corpセイコーエプソン株式会社
    • WADA MITSUHIROKATO TATSUTANAKA SATORU
    • H03H3/08H01L41/09H01L41/18H01L41/22H01L41/23H01L41/253H03H9/145H03H9/25
    • H03H3/10H03H9/25H03H2003/0442Y10T29/42
    • PROBLEM TO BE SOLVED: To provide a piezoelectric vibration device capable of raising a resonant frequency while preventing the increase in surface roughness and structural breakage, a method of manufacturing the piezoelectric vibration device, and a method of adjusting the resonant frequency.SOLUTION: The method of manufacturing the piezoelectric vibration device having a surface acoustic wave element 10 includes a step of forming a functional film 4 for increasing a velocity of a wave on a surface of the surface acoustic wave element 10. Also, the Young's modulus of the functional film 4 is higher than the Young's modulus of each of an excitation electrode 2 and a piezoelectric body 1, and the density of the functional film 4 is lower than the density of each of the excitation electrode 2 and the piezoelectric body 1. Thus, it is possible to develop frequency rise due to elastic modulus rise while suppressing the influence of frequency drop due to a mass addition effect to thereby raise the resonant frequency of the surface acoustic wave element.
    • 解决的问题:提供能够提高谐振频率同时防止表面粗糙度和结构断裂增加的压电振动装置,压电振动装置的制造方法和调节谐振频率的方法。 解决方案:制造具有表面声波元件10的压电振动装置的方法包括形成用于增加表面声波元件10的表面上的波速的功能膜4的步骤。另外, 功能膜4的杨氏模量高于激发电极2和压电体1的杨氏模量,功能膜4的密度低于激发电极2和压电体的密度 因此,可以通过弹性模量上升而产生频率上升,同时抑制由于质量相加效应引起的频率下降的影响,从而提高表面声波元件的共振频率。 版权所有(C)2012,JPO&INPIT
    • 7. 发明专利
    • Lamb wave type high frequency device
    • 拉姆波型高频器件
    • JP2008098974A
    • 2008-04-24
    • JP2006278407
    • 2006-10-12
    • Seiko Epson Corpセイコーエプソン株式会社
    • TANAKA SATORU
    • H03H9/25H01L41/09H01L41/18
    • PROBLEM TO BE SOLVED: To attain a Lamb wave type high frequency resonator with highly precise resonance frequency and excellent frequency temperature characteristics with a simple structure.
      SOLUTION: The Lamb wave type high frequency resonator 10 has: a piezoelectric substrate 20 comprised of crystal; a comb-line IDT electrode 30 formed on the surface 21 of the piezoelectric substrate 20; and an adjustment film 60 comprised of materials with density different from those of the piezoelectric substrate 20, and formed at least in an area where the Lamb wave is propagated on the rear surface 22 of the piezoelectric substrate 20. The Lamb wave type high frequency resonator 10 with the highly precise resonance frequency and the excellent frequency temperature characteristics is provided in the simple structure by properly controlling thickness (t) of the adjustment film 60.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:以简单的结构获得具有高精度共振频率和优异的频率温度特性的兰姆波型高频谐振器。 解决方案:兰姆波型高频谐振器10具有:由晶体构成的压电基片20; 形成在压电基板20的表面21上的梳状IDT电极30; 以及由与压电基板20的密度不同的材料构成的调整膜60,至少形成在兰姆波在压电基板20的背面22上传播的区域。兰姆波型高频谐振器 通过适当地控制调节膜60的厚度(t),以简单的结构提供具有高精度共振频率和优异的频率温度特性的图10。(C)2008,JPO&INPIT
    • 8. 发明专利
    • Lamb-wave type high-frequency resonator
    • 拉姆波型高频谐振器
    • JP2008054163A
    • 2008-03-06
    • JP2006230188
    • 2006-08-28
    • Seiko Epson Corpセイコーエプソン株式会社
    • TANAKA SATORU
    • H03H9/25H01L41/09H01L41/18H03H9/145
    • PROBLEM TO BE SOLVED: To provide a Lamb-wave type high-frequency resonator that has a high Q value, high phase velocity and superior frequency temperature characteristics.
      SOLUTION: The Lamb-wave type high-frequency resonator 10 has a liquid crystal substrate 20, an IDT electrode 30 constituted by interposing a first cross finger electrode 31 and a second cross finger electrode 32 into the main surface of the liquid crystal substrate 20 and reflectors 40, 50 arranged on both sides of the traveling direction of the Lamb wave of the IDT electrode 30. If the crossing width between the first cross finger electrode 31 and the second cross finger electrode 32 is W and the wavelength of the Lamb wave is λ, the crossing width W is set within a range, expressed by 21λ≤W≤54λ. In addition, the IDT electrode 30 is formed so that the segmentation angle of the liquid crystal substrate 20 and the propagating direction of the Lamb wave become (0, θ, 0) by Euler angle representation and within a range, in which the angle θ is expressed as being 35 degrees ≤θ≤47.2 degrees, normalized substrate thickness t/λ, expressed by a relation between the thickness t of the liquid crystal substrate 20 and the wavelength λ of the Lamb wave, set to be within a range of 0.176≤t/λ≤1.925.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供具有高Q值,高相速度和优异的频率温度特性的兰姆波型高频谐振器。 解决方案:兰姆波型高频谐振器10具有液晶基板20,IDT电极30,其通过将第一交叉指状电极31和第二交叉指状电极32插入到液晶的主表面中 基板20和布置在IDT电极30的兰姆波的行进方向的两侧的反射器40,50。如果第一交叉指状电极31和第二十字指状电极32之间的交叉宽度为W,并且波长 兰姆波为λ,交叉宽度W设定在由21λ≤W≤54λ表示的范围内。 此外,IDT电极30形成为使得液晶基板20的分割角度和兰姆波的传播方向通过欧拉角表示成为(0,θ,0)并且在其中角度θ 表示为35度≤θ≤47.2度,归一化基板厚度t /λ,由液晶基板20的厚度t与兰姆波的波长λ之间的关系表示,设定在0.176的范围内 ≤T/λ≤1.925。 版权所有(C)2008,JPO&INPIT
    • 9. 发明专利
    • Lamb wave type high frequency device, method for manufacturing lamb wave type high frequency device
    • 拉姆波型高频器件,用于制造拉姆波型高频器件的方法
    • JP2007251910A
    • 2007-09-27
    • JP2006209507
    • 2006-08-01
    • Seiko Epson Corpセイコーエプソン株式会社
    • TANAKA SATORU
    • H03H9/25H01L41/09H01L41/18H01L41/187H01L41/22H01L41/23H01L41/312H01L41/313H01L41/337H03H3/08
    • H03H9/02228H03H3/02H03H9/02023H03H9/1014H03H2003/027Y10T29/42
    • PROBLEM TO BE SOLVED: To provide a Lamb wave type high frequency device whose structural strength is increased and which achieves stable characteristics and to provide its manufacturing method by which cracks hardly occur during manufacturing process steps and the yield ratio can be improved. SOLUTION: The Lamb wave type high frequency device 10 is composed of a piezoelectric substrate 20 on one major surface of which IDT electrodes 30 are formed and a reinforcing substrate 50 which is bonded to the other major surface of the piezoelectric substrate 20. A space 54 of an area larger than a region where Lamb wave is propagated is provided on the bonding plane between the piezoelectric substrate 20 and the reinforcing substrate 50. The method for manufacturing the Lamb wave type high frequency device 10 includes a step for forming a concave part 53 corresponding to the space 54 in the reinforcing substrate 50, a step for forming a sacrifice layer in the concave part 53, a step for polishing the thick plate of the piezoelectric substrate 20 into a predetermined thickness after bonding the thick plate of the piezoelectric substrate 20 and the reinforcing substrate 50, a step for forming the IDT electrodes 30 and reflectors 41 and 42 and a step for forming the space 54 by removing the sacrifice layer. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:为了提供结构强度提高并且实现稳定特性的兰姆波型高频装置,并且提供其在制造工艺步骤中几乎不发生裂纹的制造方法,并且可以提高屈服比。 解决方案:兰姆波型高频器件10由形成有IDT电极30的一个主表面上的压电基片20和与压电基片20的另一主表面接合的加强基片50组成。 在压电基板20和增强基板50之间的接合面上设置有大于兰姆波传播区域的区域的空间54.该兰姆波型高频装置10的制造方法包括: 对应于加强基板50中的空间54的凹部53,在凹部53中形成牺牲层的工序,将压电基板20的厚板在将厚板 压电基板20和加强基板50,用于形成IDT电极30和反射器41和42的步骤以及通过移除形成空间54的步骤 ving牺牲层。 版权所有(C)2007,JPO&INPIT