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1. 发明专利

JP2003321765A Vapor deposition method for organic matter, and vapor deposition system and evaporation source used for this method 审中-公开
标题翻译：用于有机物的蒸气沉积方法和用于该方法的蒸发沉积系统和蒸发源
公开(公告)号：JP2003321765A
公开(公告)日：2003-11-14
申请号：JP2002128791
申请日：2002-04-30
申请人： Sanyo Shinku Kogyo Kk , 三容真空工業株式会社
发明人： KITAHATA AKIHIRO , KITAHATA AKIHIDE , OGAWA SOICHI , YAMADA TAKAHARU , KAJIKAWA FUJIO , OHASHI KENICHI
IPC分类号： H05B33/10 , C23C14/12 , C23C14/26 , H01L51/50 , H05B33/14
CPC分类号： C23C14/12 , C23C14/228 , C23C14/246 , C23C14/26
摘要： PROBLEM TO BE SOLVED: To provide an evaporation source, vapor deposition system, and vapor deposition method capable of uniformly promoting melting of a material for vapor deposition even if the material is an organic material and of efficiently forming uniform and good-quality vapor deposited films containing fewer impurities by averting damaging the organic material and by enhancing the effect of heat transfer thereof. SOLUTION: The evaporation source 4 comprises a casing 41 provided with an aperture 40 for housing the material 5 for vapor deposition, a material supply section 6 for supplying the material 5 into the casing 5, heating elements 8 to be included into the material 5 in the casing 41, IH coils 7b disposed near the heating elements 8 and on the outer periphery of the casing 41 in order to inductively heat the heating elements 8 and an agitating section 9 for agitating the heating elements 8. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供能够均匀促进气相沉积材料的熔融的蒸发源，气相沉积系统和气相沉积方法，即使该材料是有机材料并且有效地形成均匀和良好的质量通过避免损坏有机材料并增强其传热效果，气相沉积膜含有较少的杂质。蒸发源4包括设置有用于容纳用于气相沉积的材料5的孔40的壳体41，用于将材料5供应到壳体5中的材料供应部分6，包括在壳体5中的加热元件8 壳体41中的材料5，设置在加热元件8附近和壳体41的外周上的IH线圈7b，以感应加热加热元件8和用于搅拌加热元件8的搅拌部分9。（C）2004，JPO

2. 发明专利

JPH05287520A 失效
公开(公告)号：JPH05287520A
公开(公告)日：1993-11-02
申请号：JP9063692
申请日：1992-04-10
申请人： SANYO SHINKU KOGYO KK
发明人： KITAHATA AKIHIRO , TABATA SABURO , KAJIKAWA FUJIO
IPC分类号： C23C14/22 , C23C14/32 , C23C14/34
摘要： PURPOSE:To simplify a production process and to shorten working time by providing a sputtering target and EB guns as well as the exposed surfaces of materials to be evaporated in a prescribed state and executing sputtering, etc., while rotating a substrate. CONSTITUTION:The EB guns 2 and the sputtering target 3 are provided along the inner wall of a vacuum chamber 1. The EB guns 2 are formed of filaments 9, electrodes for heating the thermions generated therefrom and thermion ray deflecting and converging electrodes for introducing these thermions to the materials 5 to be evaporated. These materials 5 to be evaporated consist of sublimable materials and are fixed in hearths. The exposed surfaces of the materials 5 to be evaporated are held perpendicularly to the base of the chamber 1. While the substrate S rotates and travels in the chamber 1, the substrate is subjected to the sputtering or EB vapor deposition.

3. 发明专利

JPH08111287A MANUFACTURE OF THIN-FILM EL ELEMENT 失效
公开(公告)号：JPH08111287A
公开(公告)日：1996-04-30
申请号：JP24650694
申请日：1994-10-12
申请人： SHARP KK , SANYO SHINKU KOGYO KK
发明人： KAWARASAKI MORIHIRO , TANAKA KOICHI , KITAHATA AKIHIRO , KAJIKAWA FUJIO
IPC分类号： H05B33/06 , H05B33/10 , H05B33/12 , H05B33/14
摘要： PURPOSE: To eliminate change in the light emitting characteristics caused by a long time of operation. CONSTITUTION: A thin film type EL element 1 is structured so that a transparent electrode 3, the first insulative layer 4, EL light emission layer 5, the second insulative layer 6, and metal electrode 7 are laid one over another on one surface 2a of a transparent base board 2. The EL light emission layer 5 is made of ZnS:Mn and formed by attaching this material onto the first insulative layer 4 by evaporation method. The process is performed in an H2 S atmosphere until a thickness D smaller than the total thickness of the light emission layer 5 is attained. D should range between 0

4. 发明专利

JP2837359B2 失效
公开(公告)号：JP2837359B2
公开(公告)日：1998-12-16
申请号：JP24650694
申请日：1994-10-12
申请人： SHAAPU KK , SANYO SHINKU KOGYO KK
发明人： KAWARASAKI MORIHIRO , TANAKA KOICHI , KITAHATA AKIHIRO , KAJIKAWA FUJIO
IPC分类号： H05B33/06 , H05B33/10 , H05B33/12 , H05B33/14

5. 发明专利

JPH10168443A PHENYLCARBAZOLE DERIVATIVE USED FOR HOLE OR ELECTRON TRANSPORT LAYER OF ORGANIC LUMINESCENT ELEMENT 失效
公开(公告)号：JPH10168443A
公开(公告)日：1998-06-23
申请号：JP33665396
申请日：1996-12-17
申请人： SANYO SHINKU KOGYO KK , NAKAYA TADAO
发明人： NAKAYA TADAO , OU IWAMINE , KAJIKAWA FUJIO
IPC分类号： C09K11/06 , H01L51/00 , H01L51/30 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To obtain a phenylcarbazole deriv. which is easily synthesized, is stable, and exhibits a high luminescent efficiency when used as a hole or electron transport layer by selecting a compd. comprising specific repeating structural units each unit comprising carbazole rings and benzene rings bonded to each other. SOLUTION: This phenylcarbazole deriv. is an electronic material used for a hole or electron transport layer, etc., of an org. luminescent element and comprises a plurality of units represented by formula I or II (n is a natural number of 2 or higher) wherein carbazole rings and benzene rings are bonded to each other. In this deriv. there is no overlap of benzene rings, and the deriv. has a plane structure and is stabilized by resonance. Therefore, the unpaired electron of a nitrogen atom is arranged so as to facilitate the flow of electrons or a part of positive charge to adjacent phenyl and carbazole groups.

6. 发明专利

JP2003109748A MANUFACTURING METHOD OF ELECTRONIC DEVICE OR PLASTIC BOARD FOR ORGANIC EL ELEMENT, AND ELECTRONIC DEVICE OR PLASTIC BOARD FOR ORGANIC EL ELEMENT OR ORGANIC EL ELEMENT MANUFACTURED IN SAME METHOD 审中-公开
公开(公告)号：JP2003109748A
公开(公告)日：2003-04-11
申请号：JP2001337200
申请日：2001-09-27
申请人： SANYO SHINKU KOGYO KK , KIDO JUNJI
发明人： KITAHATA AKIHIRO , KIDO JUNJI , KIDO NAOMICHI , KAJIKAWA FUJIO
IPC分类号： H05B33/02 , B32B9/00 , C23C14/06 , C23C14/20 , H01L51/50 , H05B33/10 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an electronic device or a plastic board for an organic EL element, and an electronic device or a plastic board for an organic EL element or an organic EL element structured by the same method, which can maintain luminous characteristics for a long period of time in light weight, with the use of a plastic lens board excellent in vapor barrier property and gas barrier property. SOLUTION: With the manufacturing method of an electronic device or a plastic board for an organic EL element with a vapor barrier layer and a gas barrier layer, the vapor barrier layer and the gas barrier layer are made of inorganic/organic laminated films consisting of at least a pair of an inorganic layer and an organic layer, and that, the organic layer is formed by a thermochemical deposition method or a plasma polymerization method.

7. 发明专利

JPH0613182A MANUFACTURE OF LIGHT EMITTING ELEMENT 失效
公开(公告)号：JPH0613182A
公开(公告)日：1994-01-21
申请号：JP16927292
申请日：1992-06-26
申请人： SANYO SHINKU KOGYO KK
发明人： KITAHATA AKIHIRO , TABATA SABURO , KAJIKAWA FUJIO
IPC分类号： H05B33/10
摘要： PURPOSE:To simplify manufacturing processes, shorten manufacturing time, and provide a improved characteristic complex film by forming the first insulating layer, an emission layer and the second insulating layer continuously in the same chamber, and dispensing with cleaning of a substrate between these processes. CONSTITUTION:An emission element is composed of a back electrode formed by laminating the first insulating layer 212a, an emission layer 23, the second insulating layer 212b, an Al layer 24 of a reflecting surface and an Ni layer 25 on a substrate S in which a transparent electrode is formed. When it is manufactured, after the first insulating layer 212a composed of an SiO2 film 21a and an Si3N4 film 22a is formed on the substrate S by sputtering, the emission layer 23 composed of a ZnSiMn film is formed on it by EB evaporation. Afterward, the second insulating layer 212b composed of an Sift film 21b and an Si3N4 film 22b is formed on the emission layer 23 by the sputtering, and these first insulating layer 212a, emission layer 23 and second insulating layer 212b are formed continuously in the same vacuum chamber.

8. 发明专利

JP2003226961A CONTINUOUS VAPOR DEPOSITION SYSTEM 审中-公开
公开(公告)号：JP2003226961A
公开(公告)日：2003-08-15
申请号：JP2002026566
申请日：2002-02-04
申请人： SANYO SHINKU KOGYO KK
发明人： KITAHATA AKIHIRO , YAMADA TAKAHARU , KAJIKAWA FUJIO
IPC分类号： H05B33/10 , C23C14/26 , H01L51/50 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To provide a continuous vapor deposition system by which an organic EL layer having a multilayer structure is continuously deposited. SOLUTION: In the vapor deposition system, a vapor deposition source is constituted of a cylindrical body, provided with a high frequency coil for heating which is wound around the outer circumference and a heat generating body generating heat induced by the high frequency coil inside, and a material supply pipe connected to a material supply apparatus for continuously supplying a granular or the like material with an inert gas or a reactive gas to the cylindrical body. The heat generating body is provided with a proper interval in the cylindrical body. COPYRIGHT: (C)2003,JPO

9. 发明专利

JP2003213408A REACTIVE SPUTTERING METHOD, AND FILM DEPOSITION APPARATUS THEREFOR 审中-公开
公开(公告)号：JP2003213408A
公开(公告)日：2003-07-30
申请号：JP2002018094
申请日：2002-01-28
申请人： SANYO SHINKU KOGYO KK
发明人： KITAHATA AKIHIRO , YAMADA TAKAHARU , KAJIKAWA FUJIO , SAGAWA YASUHIKO
IPC分类号： C23C14/34 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a reactive sputtering method and a film deposition apparatus therefor in which a reactive film in a complete state can be continuously deposited at high speed by the reactive sputtering. SOLUTION: A substrate holder which is circulated while holding a substrate, and a pair of twin targets connected to an RF power source to apply the RF power and an MF power source to apply the MF power are disposed close to each other in a vacuum chamber. The MF power is supplied from the MF power source to one twin target, the sputtering is performed while introducing inert gas to deposit a non-reactive film, and the RF power is supplied from the RF power source to the other twin target. The inert gas and the reactive gas are introduced to generate reactive plasma, the non-reactive film is repeatedly converted into a complete thin film of oxide or the like by ions in a radical state, and the complete thin film of oxide or the like of sufficient film thickness is deposited. Then, the power to each twin target is supplied in an opposite manner, and the circulating direction of the substrate is changed to continuously deposit the thin film of oxide or the like of different materials. COPYRIGHT: (C)2003,JPO

10. 发明专利

JP2003193230A METHOD AND APPARATUS FOR DEPOSITING THIN FILM OF OXIDE OR THE LIKE 审中-公开
公开(公告)号：JP2003193230A
公开(公告)日：2003-07-09
申请号：JP2001391856
申请日：2001-12-25
申请人： SANYO SHINKU KOGYO KK
发明人： KITAHATA AKIHIRO , YAMADA TAKAHARU , KAJIKAWA FUJIO , OGAWA SOICHI
IPC分类号： C23C14/34 , C23C14/08
摘要： PROBLEM TO BE SOLVED: To provide a method for depositing a thin film of oxide or the like with which a reaction film in a perfect state can be rapidly deposited by the reactive sputtering using a metal target, and to provide an apparatus for depositing the thin film of the oxide or the like. SOLUTION: A substrate holder to hold and circumferentially move a substrate, an RF power source to apply the RF power, and at least two twin targets connected to an MF power source to apply the MF power are provided in a vacuum chamber. A non-reacted reaction film is deposited by performing the sputtering while introducing inert gas by superposing the MF power source on the RF power source with one twin target switched ON, and only the RF power source is applied with the other twin target switched OFF. A perfect reaction film of sufficient film thickness is deposited by repeating the conversion of the non-reacted reaction film into a reaction film with ions in a radical state by introducing the inert gas and the reactive gas to generate reactive plasma. COPYRIGHT: (C)2003,JPO

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