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1. 发明专利

JP2003321765A Vapor deposition method for organic matter, and vapor deposition system and evaporation source used for this method 审中-公开
标题翻译：用于有机物的蒸气沉积方法和用于该方法的蒸发沉积系统和蒸发源
公开(公告)号：JP2003321765A
公开(公告)日：2003-11-14
申请号：JP2002128791
申请日：2002-04-30
申请人： Sanyo Shinku Kogyo Kk , 三容真空工業株式会社
发明人： KITAHATA AKIHIRO , KITAHATA AKIHIDE , OGAWA SOICHI , YAMADA TAKAHARU , KAJIKAWA FUJIO , OHASHI KENICHI
IPC分类号： H05B33/10 , C23C14/12 , C23C14/26 , H01L51/50 , H05B33/14
CPC分类号： C23C14/12 , C23C14/228 , C23C14/246 , C23C14/26
摘要： PROBLEM TO BE SOLVED: To provide an evaporation source, vapor deposition system, and vapor deposition method capable of uniformly promoting melting of a material for vapor deposition even if the material is an organic material and of efficiently forming uniform and good-quality vapor deposited films containing fewer impurities by averting damaging the organic material and by enhancing the effect of heat transfer thereof. SOLUTION: The evaporation source 4 comprises a casing 41 provided with an aperture 40 for housing the material 5 for vapor deposition, a material supply section 6 for supplying the material 5 into the casing 5, heating elements 8 to be included into the material 5 in the casing 41, IH coils 7b disposed near the heating elements 8 and on the outer periphery of the casing 41 in order to inductively heat the heating elements 8 and an agitating section 9 for agitating the heating elements 8. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供能够均匀促进气相沉积材料的熔融的蒸发源，气相沉积系统和气相沉积方法，即使该材料是有机材料并且有效地形成均匀和良好的质量通过避免损坏有机材料并增强其传热效果，气相沉积膜含有较少的杂质。蒸发源4包括设置有用于容纳用于气相沉积的材料5的孔40的壳体41，用于将材料5供应到壳体5中的材料供应部分6，包括在壳体5中的加热元件8 壳体41中的材料5，设置在加热元件8附近和壳体41的外周上的IH线圈7b，以感应加热加热元件8和用于搅拌加热元件8的搅拌部分9。（C）2004，JPO

2. 发明专利

JP2003317999A Plasma generator 有权
标题翻译：等离子发生器
公开(公告)号：JP2003317999A
公开(公告)日：2003-11-07
申请号：JP2002122584
申请日：2002-04-24
申请人： Sanyo Shinku Kogyo Kk , 三容真空工業株式会社
发明人： KITAHATA AKIHIRO , KITAHATA AKIHIDE , OGAWA SOICHI , YAMADA TAKAHARU
IPC分类号： H05H1/46 , B01J19/08 , C23C14/32 , H05H1/30
摘要： PROBLEM TO BE SOLVED: To form an excellent-quality thin film on a substrate at a high speed by generating high-density and large-capacity plasma in a large area. SOLUTION: In this plasma generator 1, a cathode 2 and an anode 3 are provided opposite to each other and are connected by an accelerating power source A. The cathode 2 is formed with a plurality of passage holes 22 emitting an ionized inert gas from the front end face 21 of the cathode 2. An induction heating body is wound along the peripheral face 24 of the cathode 2 through an insulator 5. The induction heating body is composed of an IH coil 6 and is connected to a high frequency power source B. The plurality of passage holes 22 are heated by the IH coil 6 to emit a large number of thermoelectrons. An inert gas C injected into the passage holes 22 is evaporated and ionized by the thermal electrons. By emitting the ionized inert gas from the front end face 21 and executing an electric discharge, the sheet plasma E is generated between the cathode 2 and the anode 3. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：通过在大面积上产生高密度和大容量等离子体，在高速下在基板上形成优质的薄膜。解决方案：在该等离子体发生器1中，阴极2和阳极3彼此相对设置并且通过加速电源A连接。阴极2形成有多个通过离子化惰性的通孔22 来自阴极2的前端面21的气体。感应加热体通过绝缘体5沿着阴极2的周面24卷绕。感应加热体由IH线圈6构成，并与高频电源B.多个通路孔22被IH线圈6加热以发射大量的热电子。注入到通孔22中的惰性气体C被热电子蒸发并离子化。通过从前端面21发射离子化的惰性气体并执行放电，在阴极2和阳极3之间产生片状等离子体E.版权所有（C）2004，JPO

3. 发明专利

JP2004059947A Plasma cvd apparatus 审中-公开
标题翻译：等离子体CVD装置
公开(公告)号：JP2004059947A
公开(公告)日：2004-02-26
申请号：JP2002216194
申请日：2002-07-25
申请人： Sanyo Shinku Kogyo Kk , 三容真空工業株式会社
发明人： KITAHATA AKIHIRO , KITAHATA AKIHIDE , OGAWA SOICHI , YAMADA TAKAHARU
IPC分类号： H05H1/46 , C23C16/50 , H01J37/32
摘要： PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus for realizing a dense and uniform fine crystalline structure of a thin film, and easily depositing the thin film even on a substrate of large area. SOLUTION: This plasma CVD apparatus generates plasma between a cathode 2 and an anode 3 by emitting ionized inert gas from the cathode 2 to the anode 3 to perform the discharge. The cathode 2 is formed of an emission material to emit thermoelectrons and includes at least one passing hole 21 to allow the inert gas C to pass through, and an IH coil 6 to perform induction heating of the emission material, and has a skirt 8 having an aperture 10 opened in the emitting direction X of the inert gas C. The anode 3 is disposed inside the skirt 8 or in a vicinity of the cathode 2. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种用于实现薄膜的致密且均匀的微细晶体结构的等离子体CVD装置，并且即使在大面积的基板上也容易沉积薄膜。解决方案：该等离子体CVD装置通过从阴极2发射离子化的惰性气体到阳极3，在阴极2和阳极3之间产生等离子体，进行放电。阴极2由发射热电子的发射材料形成，并且包括允许惰性气体C通过的至少一个通孔21和IH线圈6以对发射材料进行感应加热，并且具有裙部8，裙部8具有在惰性气体C的发射方向X上开口的孔10.阳极3设置在裙部8内或阴极2的附近。（C）2004，JPO

4. 发明专利

JP2003013220A Magnetron sputtering apparatus 审中-公开
标题翻译： MAGNETRON喷射装置
公开(公告)号：JP2003013220A
公开(公告)日：2003-01-15
申请号：JP2001200507
申请日：2001-07-02
申请人： Sanyo Shinku Kogyo Kk , 三容真空工業株式会社
发明人： KITAHATA AKIHIRO , KAWABATA TAKASHI , YAMADA TAKAHARU
IPC分类号： C23C14/35 , G11B7/26
摘要： PROBLEM TO BE SOLVED: To provide a magnetron sputtering apparatus suitable for forming a film consisting of a magnetic material on a substrate.
SOLUTION: The magnetron sputtering apparatus having a target to be sputtered, a substrate arranged so as to face the target, on which the sputtered material from the target is deposited, and a magnetic field generating means for generating the magnetic field on the surface of the target, comprises the target composed of magnetic materials, arranging the magnetic field generating means so as to surround the target, and forming an unbalanced magnetic field.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供适于在基板上形成由磁性材料构成的膜的磁控管溅射装置。解决方案：具有要溅射的靶的磁控溅射装置，沉积有来自目标的溅射材料的基板布置成面对目标;以及磁场产生装置，用于在其表面上产生磁场目标，包括由磁性材料构成的目标，布置磁场产生装置以围绕目标，并形成不平衡磁场。

5. 发明专利

JP2961059B2 Polishing apparatus 失效
公开(公告)号：JP2961059B2
公开(公告)日：1999-10-12
申请号：JP31511494
申请日：1994-12-19
申请人：三容真空工業株式会社
发明人： KITAHATA AKIHIRO , NOGUCHI SHIGEO
IPC分类号： B24B37/04 , B24B37/30 , B24B41/06

6. 发明专利

JP2003231963A PROCESS AND DEVICE FOR VACUUM DEPOSITION 审中-公开
公开(公告)号：JP2003231963A
公开(公告)日：2003-08-19
申请号：JP2002033825
申请日：2002-02-12
申请人： SANYO SHINKU KOGYO KK
发明人： KITAHATA AKIHIRO , YAMADA TAKAHARU
IPC分类号： C23C14/24 , C23C14/26
摘要： PROBLEM TO BE SOLVED: To provide a vacuum deposition process which allows continuous formation of films with improved adhesion, and a device therefor. SOLUTION: In the vapor deposition process, an evaporation source is formed as a tubular body with a partial opening at its substrate side and heated through high-frequency-induced heating. An evaporation material such as powder, etc., and an inert gas such as Ar gas, etc., are continuously fed into the tubular body while heating and melting or subliming and gasifying the evaporation material to generate a pressure difference between the interior of the tubular body and a vacuum chamber, and the material is sprayed at a high speed onto the substrate for film formation. COPYRIGHT: (C)2003,JPO

7. 发明专利

JP2000357662A CVD APPARATUS 失效
公开(公告)号：JP2000357662A
公开(公告)日：2000-12-26
申请号：JP17072599
申请日：1999-06-17
申请人： SANYO SHINKU KOGYO KK
发明人： KITAHATA AKIHIRO , YAMADA TAKAHARU
IPC分类号： H01L21/205 , C23C16/50 , C23C16/511 , C23C16/517
摘要： PROBLEM TO BE SOLVED: To evenly supply a high-density plasma for large-sized substrates by providing a CVD system with a microwave introducing means for plasmatizing a gas supplied into a chamber by gas supplying means, high-frequency power supplying means for supplying discharge electrodes with high-frequency power, a power applying means for applying power to holding tables, and the like. SOLUTION: A microwave introducing section 8c is configured of a magnetron, a waveguide, and the like and supplies a microwave whose frequency is 2.45 GHz to gases, such as Ar from gas sources to plasmatize or to individually make the gases into radicals in advance outside a chamber 1. Lines 4a and 4b have terminals electrically connected to holding tables 4 via electrical cables, respectively, and the terminals are coupled to an external RF power source and/or DC power source via matching boxes. As a result of this arrangement, each table 4 is supplied with a prescribed RF power, DC power, or power where RF power and DC power are superimposed, whereby each table 4 produces a negative electric field, i.e., produces an electric field directed to each table 4 in the surrounding space.

8. 发明专利

JP2000328269A DRY ETCHING DEVICE 失效
公开(公告)号：JP2000328269A
公开(公告)日：2000-11-28
申请号：JP14293499
申请日：1999-05-24
申请人： SANYO SHINKU KOGYO KK
发明人： KITAHATA AKIHIRO , YAMADA TAKAHARU
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To treat large-sized substrates in bulk at one time by providing plasma generating electrodes fitted parallel to substrates provided on holding stands revolving on lines. SOLUTION: Along lines 4a and 4b, respectively, plural plasma generating electrodes 6 are provided parallel to substrates, and, by prescribed driving mechanisms, the plasma generating electrodes 6 are reciprocated in the upper and lower directions at prescribed strokes in chambers 1A and 1B. When etching, while the plasma generating electrodes 6 are reciprocated in the upper and lower directions, prescribed RF electric power is fed from RF power sources 19 corresponding thereto. Simultaneously, etching gas and carrier gas are fed from gas introducing tubes 7. These gases are previously made into plasma by microwaves. In this way, plasma high in density is fed to each substrate in a uniform state, so that the etching treatment can be executed efficiently and uniformly.

9. 发明专利

JP2000114202A MANUFACTURE OF ELECTRODE FILM FOR WIRING USING AL 失效
公开(公告)号：JP2000114202A
公开(公告)日：2000-04-21
申请号：JP28011798
申请日：1998-10-01
申请人： SANYO SHINKU KOGYO KK
发明人： KITAHATA AKIHIRO , YAMADA TAKAHARU
IPC分类号： H01L21/203 , C23C14/34 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing electrode films for wiring which are highly precise, free of hillocks or the like, and composed solely of Al. SOLUTION: A porous Al electrode film is formed by injecting Al-sputtered particles and Al evaporated particles onto the surface of a substrate 1 and adhering them. The Al-sputtered particles are generated by sputtering a target made of an Al-based material, and the Al evaporated particles are obtained by heating an evaporating source and evaporating Al in the source. The substrate 1 is thereafter heated, thereby forming an Al electrode film for wiring which has a higher density than the porous Al electrode film.

10. 发明专利

JPH1192942A CVD DEVICE 失效
公开(公告)号：JPH1192942A
公开(公告)日：1999-04-06
申请号：JP25372797
申请日：1997-09-18
申请人： SANYO SHINKU KOGYO KK
发明人： KITAHATA AKIHIRO , YAMADA TAKAHARU , MORI MIYUKI
IPC分类号： C23C16/50 , C23C16/505 , C23C16/511 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a CVD device capable of efficiently forming coating on large-sized substrates or the like in large quantities at a time at a high speed at high precision. SOLUTION: This CVD device has a vacuum chamber, a gas feeding-unit provided with a gas feeding source and a feeding tube introducing a gas from the gas feeding source into the vacuum chamber and a plasma generating electrode provided in the vacuum chamber and plasmatizing and/or actively ionizing the gas introduced into the vacuum chamber. In this case, the plasma generating electrode 20 is composed in such a manner that circular or polygonal ring-shaped plural permanent magnets 23 are embeded into a metallic rod 21 freely attachable and detachable at certain intervals via an insulator 24 in the magnetizing direction of the permanent magnets 23, and they are arranged so as to make the magnetic poles of the mutually adjacent permanent magnets 23 the same one.

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