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1. 发明专利

JP2010013701A Plasma generator and film deposition apparatus 审中-公开
标题翻译：等离子体发生器和薄膜沉积装置
公开(公告)号：JP2010013701A
公开(公告)日：2010-01-21
申请号：JP2008174788
申请日：2008-07-03
申请人： Sanyo Shinku Kogyo Kk , 三容真空工業株式会社
发明人： OGAWA SOICHI , DATE KENJI , SAGAWA YASUHIKO
IPC分类号： C23C14/32
摘要： PROBLEM TO BE SOLVED: To provide a plasma generator which releases a large quantity of thermoelectrons under low voltage, and to provide a film deposition apparatus. SOLUTION: The plasma generator 11 is provided with a plurality of thermoelectron release parts 42 formed so as to be a tubular body and releasing thermoelectrons to a cathode 2. In the plasma generator 11, ionized inert gas is released from the cathode 2 toward an anode 3, so as to cause discharge, thus plasma is generated between the cathode 2 and the anode 3, and, in the thermoelectron release parts 42, thermoelectrons are released from the inner circumferential faces 43 of the tube and the outer circumferential faces 44 of the tube. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在低电压下释放大量热电子的等离子体发生器，并提供一种成膜装置。解决方案：等离子体发生器11设置有多个形成为管状体并将热电子释放到阴极2的热电释放部分42.在等离子体发生器11中，电离惰性气体从阴极2释放朝向阳极3，从而导致放电，从而在阴极2和阳极3之间产生等离子体，并且在热电子释放部分42中，热电子从管的内周面43和外周面 44管。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2012160381A Metal film 审中-公开
标题翻译：金属膜
公开(公告)号：JP2012160381A
公开(公告)日：2012-08-23
申请号：JP2011020163
申请日：2011-02-01
申请人： Sanyo Shinku Kogyo Kk , 三容真空工業株式会社
发明人： DATE KENJI , SAGAWA YASUHIKO
IPC分类号： H01B5/14 , H01L21/3205 , H01L21/768 , H01L23/532 , H05K1/09
摘要： PROBLEM TO BE SOLVED: To prevent oxidation of a wiring metal film and further also prevent galvanic corrosion newly generated by performing antioxidation.SOLUTION: An ITO film 3 is formed on a film 2 serving as a base martial, and a metal film 4 is formed on the ITO film. The metal film comprises a second protective film 41 made of an Ni-Cu alloy film, a metal wiring film (Al-Nd alloy) 42 having a value of resistance lower than that of Al and forming a wiring pattern, and a first protective film 43 made of a Ni-Cu alloy film, which are laminated in the order.
摘要翻译：要解决的问题：为了防止布线金属膜的氧化，并且还防止通过进行抗氧化而新产生的电镀腐蚀。解决方案：在作为基础武术的膜2上形成ITO膜3，并且在ITO膜上形成金属膜4。金属膜包括由Ni-Cu合金膜制成的第二保护膜41，具有低于Al的电阻值并形成布线图案的金属布线膜（Al-Nd合金）42和第一保护膜 43，其由Ni-Cu合金膜制成，其按顺序层压。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2010100886A Protective film for substrate 审中-公开
标题翻译：基板保护膜
公开(公告)号：JP2010100886A
公开(公告)日：2010-05-06
申请号：JP2008272370
申请日：2008-10-22
申请人： Sanyo Shinku Kogyo Kk , 三容真空工業株式会社
发明人： SAGAWA YASUHIKO , OGAWA SOICHI , DATE KENJI
IPC分类号： C23C14/06
摘要： PROBLEM TO BE SOLVED: To improve external resistance including wear resistance more highly than that of a substrate on which an SiO film has been deposited.
SOLUTION: Electrode wiring 82 composed of a transparent conductive film is deposited on a substrate in a laminated fashion, and a protective film 83 is deposited on the electrode wiring 82 in a laminated fashion. The protective film deposited on the substrate 81 is composed of an SiOC film. Further, at least the deposition of the protective film 83 on the substrate 81 is performed by an MPD (Multi Plasma Deposition) system as a film deposition system 1.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提高包括耐磨性的外部电阻比沉积有SiO膜的基板的外部电阻更高。解决方案：以透明导电膜形成的电极布线82以层叠的方式沉积在基板上，并且以层压的方式在电极布线82上沉积保护膜83。沉积在基板81上的保护膜由SiOC膜构成。此外，至少通过作为成膜系统1的MPD（多等离子体沉积）系统进行保护膜83在基板81上的沉积。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2003213408A REACTIVE SPUTTERING METHOD, AND FILM DEPOSITION APPARATUS THEREFOR 审中-公开
公开(公告)号：JP2003213408A
公开(公告)日：2003-07-30
申请号：JP2002018094
申请日：2002-01-28
申请人： SANYO SHINKU KOGYO KK
发明人： KITAHATA AKIHIRO , YAMADA TAKAHARU , KAJIKAWA FUJIO , SAGAWA YASUHIKO
IPC分类号： C23C14/34 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a reactive sputtering method and a film deposition apparatus therefor in which a reactive film in a complete state can be continuously deposited at high speed by the reactive sputtering. SOLUTION: A substrate holder which is circulated while holding a substrate, and a pair of twin targets connected to an RF power source to apply the RF power and an MF power source to apply the MF power are disposed close to each other in a vacuum chamber. The MF power is supplied from the MF power source to one twin target, the sputtering is performed while introducing inert gas to deposit a non-reactive film, and the RF power is supplied from the RF power source to the other twin target. The inert gas and the reactive gas are introduced to generate reactive plasma, the non-reactive film is repeatedly converted into a complete thin film of oxide or the like by ions in a radical state, and the complete thin film of oxide or the like of sufficient film thickness is deposited. Then, the power to each twin target is supplied in an opposite manner, and the circulating direction of the substrate is changed to continuously deposit the thin film of oxide or the like of different materials. COPYRIGHT: (C)2003,JPO

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