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1. 发明专利

JP2010013701A Plasma generator and film deposition apparatus 审中-公开
标题翻译：等离子体发生器和薄膜沉积装置
公开(公告)号：JP2010013701A
公开(公告)日：2010-01-21
申请号：JP2008174788
申请日：2008-07-03
申请人： Sanyo Shinku Kogyo Kk , 三容真空工業株式会社
发明人： OGAWA SOICHI , DATE KENJI , SAGAWA YASUHIKO
IPC分类号： C23C14/32
摘要： PROBLEM TO BE SOLVED: To provide a plasma generator which releases a large quantity of thermoelectrons under low voltage, and to provide a film deposition apparatus. SOLUTION: The plasma generator 11 is provided with a plurality of thermoelectron release parts 42 formed so as to be a tubular body and releasing thermoelectrons to a cathode 2. In the plasma generator 11, ionized inert gas is released from the cathode 2 toward an anode 3, so as to cause discharge, thus plasma is generated between the cathode 2 and the anode 3, and, in the thermoelectron release parts 42, thermoelectrons are released from the inner circumferential faces 43 of the tube and the outer circumferential faces 44 of the tube. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在低电压下释放大量热电子的等离子体发生器，并提供一种成膜装置。解决方案：等离子体发生器11设置有多个形成为管状体并将热电子释放到阴极2的热电释放部分42.在等离子体发生器11中，电离惰性气体从阴极2释放朝向阳极3，从而导致放电，从而在阴极2和阳极3之间产生等离子体，并且在热电子释放部分42中，热电子从管的内周面43和外周面 44管。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2007214003A Substrate of electronic device, and sputtering device for forming film on same substrate 审中-公开
标题翻译：电子装置的基板和用于在同一基板上形成膜的溅射装置
公开(公告)号：JP2007214003A
公开(公告)日：2007-08-23
申请号：JP2006033350
申请日：2006-02-10
申请人： Sanyo Shinku Kogyo Kk , 三容真空工業株式会社
发明人： KITAHATA AKIHIDE , OGAWA SOICHI , DATE KENJI
IPC分类号： H01J1/316 , C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a substrate of an electronic device for emitting electrons efficiently from a pair of electrode films, and a sputtering device for forming a film on the substrate. SOLUTION: An SiO 2 film 32 formed of insulating material different from a rear side substrate 3 formed of float glass is provided on an opposite space side surface 31 of the rear side substrate 3. A clearance part 33 is formed on the SiO 2 film 32. A surface conduction electron emitting part 34 for emitting the electrons for exciting a phosphor 23 to emit light is provided on the SiO 2 film 32 of the rear side substrate 3. Respective electron emitting parts 34 are structured by separating the pair of the electrode films 35, 36, and emit the electrons to a phosphor part 22 by applying a voltage (giving a potential difference) to the pair of the electrode films 35, 36. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于从一对电极膜有效发射电子的电子器件的基板，以及用于在基板上形成膜的溅射装置。解决方案：在背面基板3的相对的空间侧表面31上设置由与浮法玻璃形成的背面基板3不同的绝缘材料形成的SiO 2 SB 2膜32.间隙部分33形成在SiO 2薄膜32上。用于发射用于激发荧光体23发射光的电子的表面传导电子发射部分34设置在SiO 2 SBB 2上。后侧基板3的薄膜32.各电子发射部分34通过分离一对电极薄膜35,36而构成，并通过施加电压（给予电位差）而将电子发射到荧光体部分22 的电极膜35,36。（C）2007，JPO＆INPIT

3. 发明专利

JP2004095631A Method of manufacturing flexible printed circuit board, and flexible printed circuit board manufactured by the same 审中-公开
公开(公告)号：JP2004095631A
公开(公告)日：2004-03-25
申请号：JP2002251250
申请日：2002-08-29
申请人： Sanyo Shinku Kogyo Kk , 三容真空工業株式会社
发明人： KITAHATA AKIHIDE , OGAWA SOICHI , TANIMOTO MASAHIRO
IPC分类号： C23C14/06 , H05K3/00 , H05K3/38
摘要： PROBLEM TO BE SOLVED: To hold a film layer formed on a film by suppressing a decline in peeling strength even after aging, to form a thin metal film in any desired thickness, and to hold down a manufacturing cost by eliminating unnecessary manufacturing processes.
SOLUTION: The FPC board 1 is such that a heat-resistant organic film 12 formed of an organic material and a metal film 13 formed of a metallic material are stacked in this order on one surface of a heat-shrinking film 11 formed of a heat-resistant material by a sputtering method.
COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2004059947A Plasma cvd apparatus 审中-公开
标题翻译：等离子体CVD装置
公开(公告)号：JP2004059947A
公开(公告)日：2004-02-26
申请号：JP2002216194
申请日：2002-07-25
申请人： Sanyo Shinku Kogyo Kk , 三容真空工業株式会社
发明人： KITAHATA AKIHIRO , KITAHATA AKIHIDE , OGAWA SOICHI , YAMADA TAKAHARU
IPC分类号： H05H1/46 , C23C16/50 , H01J37/32
摘要： PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus for realizing a dense and uniform fine crystalline structure of a thin film, and easily depositing the thin film even on a substrate of large area. SOLUTION: This plasma CVD apparatus generates plasma between a cathode 2 and an anode 3 by emitting ionized inert gas from the cathode 2 to the anode 3 to perform the discharge. The cathode 2 is formed of an emission material to emit thermoelectrons and includes at least one passing hole 21 to allow the inert gas C to pass through, and an IH coil 6 to perform induction heating of the emission material, and has a skirt 8 having an aperture 10 opened in the emitting direction X of the inert gas C. The anode 3 is disposed inside the skirt 8 or in a vicinity of the cathode 2. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种用于实现薄膜的致密且均匀的微细晶体结构的等离子体CVD装置，并且即使在大面积的基板上也容易沉积薄膜。解决方案：该等离子体CVD装置通过从阴极2发射离子化的惰性气体到阳极3，在阴极2和阳极3之间产生等离子体，进行放电。阴极2由发射热电子的发射材料形成，并且包括允许惰性气体C通过的至少一个通孔21和IH线圈6以对发射材料进行感应加热，并且具有裙部8，裙部8具有在惰性气体C的发射方向X上开口的孔10.阳极3设置在裙部8内或阴极2的附近。（C）2004，JPO

5. 发明专利

JP2003171762A CONTROL METHOD FOR REACTIVE SPUTTERING 审中-公开
公开(公告)号：JP2003171762A
公开(公告)日：2003-06-20
申请号：JP2001372131
申请日：2001-12-06
申请人： SANYO SHINKU KOGYO KK
发明人： KITAHATA AKIHIRO , YAMADA TAKAHARU
IPC分类号： C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a control method for reactive sputtering which deposits a thin film on a substrate by sputtering targets in a reactive gas to emit the material, and can be controlled with excellent production efficiency. SOLUTION: In the control method for the reactive sputtering which deposits the thin film on the substrate arranged facing a pair of targets, the high frequency power to be outputted from a high frequency power source is applied to the pair of targets in a constant state, and the control is performed according to the surface state of the targets by changing and superposing the output power from the high frequency power source of different frequency via one matching box. COPYRIGHT: (C)2003,JPO

6. 发明专利

JP2003138370A FILM DEPOSITION APPARATUS 审中-公开
公开(公告)号：JP2003138370A
公开(公告)日：2003-05-14
申请号：JP2001332335
申请日：2001-10-30
申请人： SANYO SHINKU KOGYO KK
发明人： KITAHATA AKIHIRO , YAMADA TAKAHARU
IPC分类号： C23C14/32
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus suitable for depositing a thin film on a substrate surface. SOLUTION: This film deposition apparatus comprises an introduction pipe for continuously feeding a wire-like or granular material together with a gas, an induction heating unit comprising a cylindrical insulator in which a tip side of the introduction pipe is inserted from one side, a heating coil is wound around the entire outer circumference, and a heater is provided inside, and an ionizing unit comprising a second cylindrical insulator in which one end side thereof is brought into contact with or close to the induction heating unit, and a high frequency coil is wound around the outer circumference thereof.

7. 发明专利

JP2003013220A Magnetron sputtering apparatus 审中-公开
标题翻译： MAGNETRON喷射装置
公开(公告)号：JP2003013220A
公开(公告)日：2003-01-15
申请号：JP2001200507
申请日：2001-07-02
申请人： Sanyo Shinku Kogyo Kk , 三容真空工業株式会社
发明人： KITAHATA AKIHIRO , KAWABATA TAKASHI , YAMADA TAKAHARU
IPC分类号： C23C14/35 , G11B7/26
摘要： PROBLEM TO BE SOLVED: To provide a magnetron sputtering apparatus suitable for forming a film consisting of a magnetic material on a substrate.
SOLUTION: The magnetron sputtering apparatus having a target to be sputtered, a substrate arranged so as to face the target, on which the sputtered material from the target is deposited, and a magnetic field generating means for generating the magnetic field on the surface of the target, comprises the target composed of magnetic materials, arranging the magnetic field generating means so as to surround the target, and forming an unbalanced magnetic field.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供适于在基板上形成由磁性材料构成的膜的磁控管溅射装置。解决方案：具有要溅射的靶的磁控溅射装置，沉积有来自目标的溅射材料的基板布置成面对目标;以及磁场产生装置，用于在其表面上产生磁场目标，包括由磁性材料构成的目标，布置磁场产生装置以围绕目标，并形成不平衡磁场。

8. 发明专利

JP2002173762A METHOD AND SYSTEM FOR DEPOSITING TRANSPARENT CONDUCTIVE FILM OR THE LIKE 审中-公开
公开(公告)号：JP2002173762A
公开(公告)日：2002-06-21
申请号：JP2001274787
申请日：2001-09-11
申请人： SANYO SHINKU KOGYO KK
发明人： KITAHATA AKIHIRO , YAMADA TAKAHARU
IPC分类号： C23C14/08 , H01B13/00
摘要： PROBLEM TO BE SOLVED: To provide a method and a system for depositing a transparent conductive film or the like which are suitably used for depositing an ITO film or the like onto a color filter, a plastic film, etc. SOLUTION: The transparent conductive film can be deposited at low sputter voltage by applying DC voltage alternately to at least a couple of targets provided inside a vacuum chamber to move electrons between the targets, synchronously applying, when negative voltage is applied to one target, high-frequency voltage to the target to which negative voltage is applied, and repeating the above procedure.

9. 发明专利

JP2000256847A DEPOSITION METHOD OF THIN-FILM AND APPARATUS THEREFOR 失效
公开(公告)号：JP2000256847A
公开(公告)日：2000-09-19
申请号：JP5693499
申请日：1999-03-04
申请人： SANYO SHINKU KOGYO KK
发明人： KITAHATA AKIHIRO , YAMADA TAKAHARU
IPC分类号： C23C14/46
摘要： PROBLEM TO BE SOLVED: To form a good-quality thin film on a substrate at a high speed by releasing thermions from a thermion assist device near to a target to excite reactive gas and causing the reaction of the ionized gas and sputter particles. SOLUTION: The gaseous Ar is introduced from an introducing hole into the thermion assist device 4 and a power source is connected thereto to generate plasma within a hollow cathode. The positive ions in the plasma bombard the inside of the hollow cathode and raise the internal temperature to about 2000 to 2100 deg.C to cause the release of the thermion. The thermion are introduced by a through-hole 3a into a vacuum chamber. The reactive gas is introduced from an introducing pipe 2a and sputtering is executed by imparting electric power to the target 2. Simultaneously, the thermion is introduced, by which the reactive gas is ionized and reacts with the sputter particles of Ti, or the like, to manufacture TiO2. A TiO2 film is thus deposited on the substrate 1. The impedance of the sputtering is made lower than the case of the sputtering alone and the deposition speed may be increased.

10. 发明专利

JP2000144416A DEVICE AND METHOD FOR APPLYING POWER 失效
公开(公告)号：JP2000144416A
公开(公告)日：2000-05-26
申请号：JP31565098
申请日：1998-11-06
申请人： SANYO SHINKU KOGYO KK
发明人： KITAHATA AKIHIRO , YAMADA TAKAHARU
IPC分类号： C23C14/54
摘要： PROBLEM TO BE SOLVED: To provide a power applying device which is capable of suppressing the discharge impedance low even in a case using the output wave of high frequency, easily controlling the phase, and preventing damages in forming a film, and a power applying method. SOLUTION: A power applying device is provided with a single oscillator, a distributor 2 and power amplifiers, progressive multipliers 3-3n provided for one half of the power amplifiers in a first stage, and a synthesizer which synthesizes the first power output wave to output from the power amplifiers through the progressive multipliers with the second power output wave to output from the power amplifiers without through the progressive multipliers after the impedance matching, and feeds the power based on the synthesized output wave to a specified target.

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