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    • 1. 发明专利
    • Apparatus for extracting nucleic acid, and method for extracting nucleic acid
    • 提取核酸的装置和提取核酸的方法
    • JP2009207459A
    • 2009-09-17
    • JP2008056342
    • 2008-03-06
    • Sony Corpソニー株式会社
    • KISHIMOTO TAKUYAWATANABE HIDETOSHIONISHI MICHIHIROSEGAWA YUJIABE TOMOTERUTAKEDA MINORUSUGANUMA HIROSHI
    • C12M1/00C12N15/09
    • PROBLEM TO BE SOLVED: To provide a new apparatus for extracting a nucleic acid capable of extracting the nucleic acid from a trace amount of a sample without causing dilution of the nucleic acid due to no use of a chemical treatment and capable of rapidly carrying out the extraction of the nucleic acid because practice ranging from cytoclasis to even adsorption of the nucleic acid can be made in the simple apparatus.
      SOLUTION: The apparatus for extracting the nucleic acid is designed to extract a specific nucleic acid from a biological sample. The apparatus for extracting the nucleic acid includes at least a flow channel in which the biological sample moves, a crushing section for crushing the biological sample in the flow channel, an enzyme inactivating section for inactivating an enzyme in the biological sample in the flow channel, and an adsorption carrier for adsorbing the extracted nucleic acid.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种新的装置,用于提取能够从微量样品中提取核酸的核酸,而不会由于不使用化学处理而导致核酸稀释,并能够快速 进行核酸的提取,因为在简单的装置中可以进行从细胞粘附到均匀吸附核酸的实践。 解决方案:用于提取核酸的装置被设计为从生物样品中提取特异性核酸。 用于提取核酸的装置至少包括生物样品移动的流路,用于粉碎流路中的生物样品的破碎部,用于使流路中的生物样品中的酶失活的酶灭活部, 和用于吸附提取的核酸的吸附载体。 版权所有(C)2009,JPO&INPIT
    • 3. 发明专利
    • MANUFACTURING METHOD FOR MAGNETIC DISK
    • JP2006323945A
    • 2006-11-30
    • JP2005147306
    • 2005-05-19
    • SONY CORP
    • TAKEDA MINORUMASUHARA SHIN
    • G11B5/84G11B5/596
    • PROBLEM TO BE SOLVED: To reduce the number of manufacturing processes for a magnetic disk having an isolation trench and a concave pit shallower than this on a magnetic surface. SOLUTION: An isolation trench 19, formed between data areas, and a shallow concave pit 23, for recording control information, are formed in a resist layer 63 on the disk substrate by pressing force by a stamper 37. Furthermore, it is etched to form the isolation trench 19, following a concavo-convex pattern by the resist layer 63, and the concave pit 23 at the same time. A master for the stamper 37 forms a positive type photoresist layer on the substrate, exposes a formation part of a land part to this, develops making the formation part of the isolation trench as a non-exposing part and making the formation part of the concave pit as a weak exposure part, removes the photoresist layer of the land part formation part, and forms the concavo-convex photoresist pattern in which a part of thickness for the weak exposure part of the concave pit formation part is made to remain and the formation part of the isolation trench 19 is made to almost remain. COPYRIGHT: (C)2007,JPO&INPIT
    • 4. 发明专利
    • Optical recording medium, optical recording/reproducing device, and optical recording/reproducing method
    • 光学记录介质,光学记录/再现设备和光学记录/再现方法
    • JP2005353203A
    • 2005-12-22
    • JP2004174112
    • 2004-06-11
    • Sony Corpソニー株式会社
    • NAKAO ISAMUIMANISHI SHINGOTAKEDA MINORUNAKAOKI ARIKATSUYAMAMOTO MASANOBU
    • G11B7/24G11B7/004G11B7/243G11B7/253G11B7/26
    • PROBLEM TO BE SOLVED: To provide an optical recording medium, an optical recording/reproducing device and an optical recording/reproducing method which can realize high density recording without causing problems due to melting of the recording medium or generation of gas and the problems where an appropriate reproducing signal cannot be obtained by a photo diode. SOLUTION: An optical recording medium 10 consists of a quartz substrate 11 and is arranged with an implanted part 13 with thickness of 5nm, for example, near one of the substrate surfaces of the quartz substrate 11. Ce ion, for example, is implanted into the implanted part 13 by ion implantation. With structure like this, constituting element (O) of the quartz and Ce ion is combined when the Ce ion is treated with a designated heating treatment, and fluorescence of stronger intensity, compared with a case without such combination, is emitted when a beam with designated wavelength is received. Based on this principle, recording reproducing with the high density is made possible by deciding that a portion with stronger fluorescence intensity is the portion into which recording (in other words, the heating process) is performed. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种光记录介质,光学记录/再现装置和光学记录/再现方法,其可以实现高密度记录,而不会由于记录介质的熔化或气体的产生而引起问题,并且 通过光电二极管不能获得合适的再现信号的问题。 解决方案:光记录介质10由石英基板11构成,并且布置有厚度为5nm的注入部分13,例如靠近石英基板11的一个基板表面。例如, 通过离子注入植入植入部分13。 利用这样的结构,当用指定的加热处理处理Ce离子时,组成石英和Ce离子的元素(O),与没有这种组合的情况相比,发射强度更强的荧光,当具有 指定波长被接收。 基于该原理,通过确定具有更强荧光强度的部分是进行记录的部分(换言之,加热处理),可以实现高密度的记录再现。 版权所有(C)2006,JPO&NCIPI
    • 6. 发明专利
    • Method for manufacturing stamper
    • JP2004334939A
    • 2004-11-25
    • JP2003126328
    • 2003-05-01
    • Sony Corpソニー株式会社
    • TAKEDA MINORU
    • G11B7/26
    • PROBLEM TO BE SOLVED: To prevent formation of defects caused by pit drop-off when a stamper is manufactured by peeling off an Ni peel film from an Si substrate in a method for manufacturing the stamper for a high-density optical disk.
      SOLUTION: A thin film 102 is formed on a substrate 101. An electron beam resist film is formed on the thin film 102, the resist film is irradiated with an electron beam and the resist film is exposed, and the resist film is developed by developer. Using the developed resist film as a mask, the thin film 102 is subjected to reactive ion etching to form an irregular pattern on the thin film 102. A peel film 104 made of a material whose expansion rate is larger than that of the thin film 102 is formed on the thin film 102. The thin film 102 and the peel film 104 are cooled with a coolant such as liquid nitrogen or liquid helium, and the peel film 104 is peeled off from the substrate 101 to manufacture a stamper.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 7. 发明专利
    • Manufacturing method of stamper for optical disk
    • JP2004288284A
    • 2004-10-14
    • JP2003078446
    • 2003-03-20
    • Sony Corpソニー株式会社
    • TAKEDA MINORU
    • C23F4/00G11B7/26
    • PROBLEM TO BE SOLVED: To prevent omission of the convex part of a stamper of a fine pattern when molding in mass production of optical disks.
      SOLUTION: In a manufacturing method of a stamper for optical disks, a negative electron beam photosensitive resist layer is applied and formed on a semiconductor substrate 1, a concave part of an irregular pattern of an optical disk obtained finally by electron beam irradiation plotting and phenomenon of a pattern corresponding to the irregular pattern formed on the optical disk obtained finally, for example, the resist layer in which a forming part of information pit is convex is patterned. a semiconductor substrate surface is etched by plasma etching making this resist pattern as a mask, and the resist pattern is eliminated. First plating forming a Ni plating layer is performed for the semiconductor substrate surface on which the irregular pattern is formed, this plating layer is peeled off from the semiconductor substrate surface, and a first stamper 41, that is, a mother stamper is manufactured. At the time, in the semiconductor substrate 1, as the pit forming part is convex, a concave part forming the convex part of the pit forming part in the formed stamper of the optical disk of the mother pattern is not in a state in which it encroaches to the semiconductor substrate 1, peeled off easily and good, omission is prevented.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 10. 发明专利
    • SEMICONDUCTOR DEVICE
    • JP2000156405A
    • 2000-06-06
    • JP35333799
    • 1999-12-13
    • SONY CORP
    • TAKEDA MINORU
    • H01L21/302H01L21/3065H01L21/316H01L21/76
    • PROBLEM TO BE SOLVED: To improve shape controllability between regions and to prevent isolation capability between regions from decreasing by setting the isolation between the elements of a semiconductor substrate to the isolation region between regions by providing an interval between a region that is made only by trench isolation and a region that is made only by selective oxidation. SOLUTION: An insulation film (SiO2) for burying a trench is formed at a trench 4 closest to a peripheral circuit out of trenches for isolation between the elements of the memory cell array region of a semiconductor substrate 1, and a selective oxide film 7 is the closest to the side of the memory cell array among the selective oxide films in the peripheral circuit. Then, the isolation region 11 between regions that are as wide as several μm is provided at a region where no circuit element is provided between a region that is made only by trench isolation and a region that is made only by selective isolation, thus eliminating a risk where the trench 4 that becomes a recess approaches the selective oxide film 7 that becomes a projecting part for causing a radial level difference, achieving improved shape controllability, and increasing the isolation capability between regions.