专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH06350131A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH06350131A
公开(公告)日：1994-12-22
申请号：JP13831893
申请日：1993-06-10
申请人： SHARP KK
发明人： MIYAUCHI NOBUYUKI , TAKEGAWA HIROSHI , SHIOMOTO TAKEHIRO , OGAWA MASARU , TSUJI AKIRA
IPC分类号： H01L23/02 , H01L31/12 , H01S5/00 , H01S5/022 , H01S3/18
摘要： PURPOSE:To protect from external force a semiconductor laser chip that projects laser light, a photodiode chip for monitoring that receives the light and wires that electrically connect these conductors, by providing a protecting member to cover the semiconductor laser chip, photodiode chip and wires. CONSTITUTION:A lead 26 is mounted on one side of the chip mounting section 25 of a common lead 24, and electrically connected with a semiconductor laser chip 21 through a wire 29. Another lead 27 is mount on the other side of the chip mounting section 25, and electrically connected with a photodiode chip 22 for monitoring through a wire 30. The semiconductor laser chip 21, photodiode chip 22 for monitoring and wires 29 and 30 are covered with resin, and all of them are covered with a plastic protecting member 31. The cylindrical protecting member 31 is closed at one end and can be horizontally divided into an upper half 32 and a lower half 33.

2. 发明专利

JPS62143496A DIE BONDING METHOD FOR PHOTOSEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS62143496A
公开(公告)日：1987-06-26
申请号：JP28624185
申请日：1985-12-17
申请人： SHARP KK
发明人： ICHIKAWA HIDEKI , SHIOMOTO TAKEHIRO
IPC分类号： H01L21/52 , H01L21/58 , H01S5/00
摘要： PURPOSE:To make transfer of wax material easy, by inserting a plate, wherein a foil-type wax material is formed, between a trowel and a heat sink, heating the trowel and the heat sink, and impressing pressure on the trowel while applying supersonic wave. CONSTITUTION:A foil-type wax material 11 is formed by deposition on a Teflon sheet 4. This wax deposition sheet A is inserted between a heat sink 2 and a trowel 5, such as the capillary part of a wire bonder, in the manner in which the foil-type wax material 11 is turned toward the heat sink 2 side. The trowel 5 and the heat sink 2 are heated, and pressure is impressed on the trowel 5 while supersonic wave is applied to the trowel 5. The foil-type wax material 11 is separated from the Teflon sheet 4 and stuck on the die bond surface of the heat sink 2 thereby. Further, a photo-semiconductor element 3 is subjected to die bonding on the foil-type wax material. Thus, it is made easy to take the foil-type wax material 11 off the Teflon sheet 4.

3. 发明专利

JPS62132330A DIE BONDING METHOD FOR OPTICAL SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62132330A
公开(公告)日：1987-06-15
申请号：JP27385685
申请日：1985-12-04
申请人： SHARP KK
发明人： ICHIKAWA HIDEKI , SHIOMOTO TAKEHIRO
IPC分类号： H01L21/52 , H01L21/58 , H01L33/62 , H01S5/00
摘要： PURPOSE:To simplify the number of steps for mounting an optical semiconductor device on a heat sink by placing a brazing material on a surface to be die bonded, collapsing the material in a foil shape, and die bonding the device on the surface. CONSTITUTION:A suitable amount of spherical brazing material 1a is placed on a heat sink 2, and collapsed by an iron 4. An optical semiconductor device 3 is die bonded on the collapsed foillike brazing material 1. Thus, the size and the die bonding position of the device can be readily altered. Since the brazing material is formed only on the surface of be die bonded, steps can be simplified.

4. 发明专利

JP2002314185A SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREFOR 失效
公开(公告)号：JP2002314185A
公开(公告)日：2002-10-25
申请号：JP2001112770
申请日：2001-04-11
申请人： SHARP KK
发明人： SHIOMOTO TAKEHIRO , HONDA MASAYUKI
IPC分类号： G11B7/09 , G11B7/125 , H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device superior in productivity, where the reflection of a side beam in a header does not adversely affect the various characteristics of optical pickup, and to provide the manufacturing method. SOLUTION: At the tip face 32 of a header 3 where a laser chip 4 emitting a laser beam L is placed, a reflector 7 reflecting a side beam Ls2 to the outside of an optical system is fitted to a side beam incident area 35 on which the side beam Ls2 which feeds back toward the header 3 is made incident in two side beams Ls1 and Ls2 which are generated from a reflection ± primary beam and which feed back through the optical system.

5. 发明专利

JP2002118320A SEMICONDUCTOR LASER DEVICE, METHOD FOR MANUFACTURING THE SAME, AND OPTICAL PICKUP 失效
公开(公告)号：JP2002118320A
公开(公告)日：2002-04-19
申请号：JP2000307462
申请日：2000-10-06
申请人： SHARP KK
发明人： SHIOMOTO TAKEHIRO , NOZAKI KENZO , YOSHIDA TOMOHIKO
IPC分类号： G11B7/09 , G11B7/125 , G11B7/135 , G11B7/22 , H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device, an optical pickup and a method for manufacturing the semiconductor laser device having an easy manufacture and a reduction of a reflection of a return light to a level including no problem. SOLUTION: The semiconductor laser device comprises a stem 3 mounting a semiconductor laser chip 1. The stem 3 has a semiconductor laser chip mounting surface 3a and an intersecting surface 3b intersecting to the mounting surface opposed to a side of a material to be emitted with a laser beam. In order to reduce an amount of the beam directed to the side of the material 6 to be emitted with the beam by reflecting the beam directed toward the intersecting surface, the intersecting surface is coated with a reflectivity reducing material 7 for lowering the reflectivity of the beam lower than that of the intersecting surface.

6. 发明专利

JPH03222487A MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH03222487A
公开(公告)日：1991-10-01
申请号：JP1813790
申请日：1990-01-29
申请人： SHARP KK
发明人： SHIOMOTO TAKEHIRO
IPC分类号： H01S5/00
摘要： PURPOSE:To stabilize a lateral mode of a laser oscillation by sequentially growing a clad layer and an active layer on a substrate formed with first, second grooves by liquid-phase epitaxy separating it into chips by the grooves, and independently laser-oscillating oscillation regions composed of the first groove. CONSTITUTION:Stripelike first grooves A1, B1, C1; A2, B2, C2 and second grooves D0, D1, D2 are formed in the same shape at an equal interval on the entire substrate 1a. A p-type GaAlAs first clad layer 3, a p-type GaAlAs active layer 4, an n-type GaAlAs second clad layer 5 and an n-type GaAs cap layer 6 are sequentially grown on the substrate 1 formed with the first, second grooves again by liquid-phase epitaxy. It is separated into chips by chip separating grooves, and oscillation regions formed of the first groove can be independently laser-oscillated. Thus, since a flat active layer can be formed on the first groove, the lateral mode of a laser oscillation can be stabilized.

7. 发明专利

JPH04240743A MARKING METHOD FOR SEMICONDUCTOR LASER CHIP 失效
公开(公告)号：JPH04240743A
公开(公告)日：1992-08-28
申请号：JP710991
申请日：1991-01-24
申请人： SHARP KK
发明人： SHIOMOTO TAKEHIRO
IPC分类号： H01L21/66 , C09D11/10 , C09D11/101
摘要： PURPOSE:To provide a marking method which has a short drying time of ink for marking a quality-defective product in a quality inspecting step of a semiconductor laser chip and provides easy read. CONSTITUTION:In a device for sequentially inspecting the qualities of a plurality of chips on an inspection stage 3, and marking, in the case of a defective product, on the surface of the chip 1 to be able to distinguish the defective chip, optical curable ink is used as ink for marking the surface of the chip 1. The curable ink has faster curing speed than that of thermosetting ink and does not cause coating spot like volatile ink, and hence can mark excellently.

8. 发明专利

JPH01175289A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH01175289A
公开(公告)日：1989-07-11
申请号：JP33583187
申请日：1987-12-28
申请人： SHARP KK
发明人： SHIOMOTO TAKEHIRO
IPC分类号： H01S3/23 , G11B7/125 , H01S3/06 , H01S5/00 , H01S5/40
摘要： PURPOSE:To make it possible to perform an erase operation, write and read operations in parallel, by providing a chip with a plurality of lasing regions where laser beams having different spot patterns are emitted. CONSTITUTION:A substrate 7 allows a current blocking layer 8 to grow thereon. A first as well as second V-shaped grooves 9, 10a and 10b are formed and further, a clad lever 11, an active layer 12, a clad layer 13, and a cap layer 14 are formed in order. After that, electrodes 15a and 15b and a p-side electrode 16 are formed. The space between the first and second lasing regions is isolated by chemical etching to form a mesa groove part 17. In this way, the first lasing region including a single V-shaped groove part 9 and the second lasing region are isolated electrically to form a structure where each region can be driven independently.

9. 发明专利

JPS62136829A DIE BONDING METHOD FOR OPTICAL SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS62136829A
公开(公告)日：1987-06-19
申请号：JP27879885
申请日：1985-12-10
申请人： SHARP KK
发明人： SHIOMOTO TAKEHIRO , ICHIKAWA HIDEKI
IPC分类号： H01L21/52 , H01L21/58
摘要： PURPOSE:To simplify a process by a method wherein a foil-shaped solder material is formed by an evaporation to a plate, the foil-shaped solder material is separated from the plate and stuck to a heat sink and an optical semiconductor element is die-bonded onto the foil-shaped solder material. CONSTITUTION:A foil-shaped solder material 11, such as In, Sn, etc. is shaped by an evaporation to a Teflon sheet 4. The foil-shaped solder material 11 is separated from the Teflon sheet 4, and stuck onto a die bonding surface for a heat sink 2, and an optical semiconductor element 3 is die-bonded onto the foil-shaped solder material 11. Accordingly, the foil-shaped solder material 11, which is hardly oxidized and has an excellent surface state and uniform thickness, can be acquired, and the size and position of die-bonding of the optical semiconductor element are changed easily, thus simplifying processes.

10. 发明专利

JPH11186649A SEMICONDUCTOR LASER UNIT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH11186649A
公开(公告)日：1999-07-09
申请号：JP34976397
申请日：1997-12-18
申请人： SHARP KK
发明人： SHIOMOTO TAKEHIRO
IPC分类号： H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To elongate operating life-time characteristics and reduce manufacturing cost, by removing an iron layer at least adjacent to a laser chip in a block. part to improve heat radiation characteristics of a stem. SOLUTION: A body part 1 comprises three layers in which a copper layer 9 is put between a pair of iron layers 8a and 8b, a block part 7 is formed by expanding a portion of the copper layer 9 from the body part 1 in the direction of layer thickness. A stem S is formed by pressing the three clad material layers, which is integrally formed with the body part 1 and the block part 7. Subsequently, a laser chip 2 is mounted on the upper end of the side of the block part 7 of the stem S and is connected to a laser terminal with a gold wire. As a result, heat radiation characteristics of the stem S can be improved by excellent heat conductivity of copper and operating life-time can be elongated, since the laser chip 2 is only in contact with the copper layer 9 without the iron layer be in contact with laser chip 2.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式