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1. 发明专利

JPH0982216A MANUFACTURE OF FIELD EMISSION TYPE ELECTRON SOURCE 失效
公开(公告)号：JPH0982216A
公开(公告)日：1997-03-28
申请号：JP23548995
申请日：1995-09-13
申请人： SHARP KK
发明人： URAYAMA MASAO , TAKEGAWA YOSHIYUKI , MORITA HIROKO , YANO MORICHIKA
IPC分类号： H01J9/02 , H01J1/30 , H01J1/304
摘要： PROBLEM TO BE SOLVED: To provide a field emission type electron source and its manufacture with good current-voltage characteristic by reducing a leak current flowing from a gate electrode to an emitter substrate. SOLUTION: A 3-10nm or so thick thermally oxidized film 15a is formed on the surface of a n-type silicone substrate 12. The silicon substrate 12 is pretreated by high-temperature heat treatment at 1100 deg.C for 10 hours in a nitrogen gas atmosphere, followed by low-temperature heat treatment at a low temperature of 600 deg.C and then post high-temperature heat treatment at a high temperature of 1100 deg.C. The surface of the silicon substrate 12 is thermally oxidized to form a 0.2-0.3μm thick thermally oxidized silicon layer 15b.

2. 发明专利

JPH08306304A MANUFACTURE OF FIELD EMISSION TYPE ELECTRON ELEMENT 失效
公开(公告)号：JPH08306304A
公开(公告)日：1996-11-22
申请号：JP10746095
申请日：1995-05-01
申请人： SHARP KK
发明人： TAKEGAWA YOSHIYUKI , URAYAMA MASAO , MORITA HIROKO
IPC分类号： H01J9/02
摘要： PURPOSE: To increase an emission current per a single electron emitting cold cathode chip by reducing damage caused to a substrate. CONSTITUTION: A surface of a silicon substrate 11 is thermally oxidized, and after a first thermally oxidized silicon layer 12 is formed, a photoresist pattern 13 is formed in a place where a cold cathode chip is formed. The photoresist pattern 13 is used a mask, and etching work is performed on the first thermally oxidized silicon layer 12 by an RIE method, and after a thermally oxidized silicon pattern 12a is formed, the photoresist pattern 13 is removed. The thermally oxidized silicon pattern 12a is used as a mask, and the silicon substrate 11 is worked by an ECR etching method, and a projecting part 11a which is a conical shape projecting from the silicon substrate 11 and is the basis of an electron emitting cold cathode chip is formed.

3. 发明专利

JPH08255556A FIELD EMISSION ELECTRON SOURCE DEVICE, MANUFACTURE THEREOF AND IMAGE DISPLAY USING THE DEVICE 失效
公开(公告)号：JPH08255556A
公开(公告)日：1996-10-01
申请号：JP5940495
申请日：1995-03-17
申请人： SHARP KK
发明人： MORITA HIROKO , URAYAMA MASAO
IPC分类号： H01J9/02 , H01J1/30 , H01J1/304 , H01J17/49
摘要： PURPOSE: To provide a field emission electron source device operable at low voltage, a method for manufacturing the device and an image display using the device. CONSTITUTION: An n-type silicon 3a is subjected to an isotropic etching process using a circular mask 5a, thereby forming a projection 3b. Then, the surface of a substrate including the projection 3b is thermally oxidized to form a silicon dioxide layer 7. At the same time, the surface of the projection 3b is thermally oxidized to form a conical cold cathode 8. Then, an electron beam takeout electrode 9 is vapor deposited, and etched to have a line form orthogonal with the line of a silicon pattern 3a including the cathode 8. Finally, a part of the mask 5a and the layer 7 is removed through an etching process to expose the cathode 8, thereby manufacturing the filed emission electron source device where a cold cathode line and an electron beam takeout electrode line form an X-Y matrix.

4. 发明专利

JPH06265865A LIQUID CRYSTAL ELEMENT 失效
公开(公告)号：JPH06265865A
公开(公告)日：1994-09-22
申请号：JP5281493
申请日：1993-03-15
申请人： SHARP KK
发明人： MORITA HIROKO , TOKUMARU TERUTAKA , SATO SHUNICHI
IPC分类号： G02F1/1333 , G02F1/135
摘要： PURPOSE:To provide the liquid crystal display element having a liquid crystal layer of a small thickness. CONSTITUTION:This liquid crystal element is constituted by clamping a liquid crystal in the spacing formed of a first transparent substrate 1a and second transparent substrate 1b which are formed with transparent electrodes 2a, 2b on their respective surfaces, a photoconductor film 3 formed on the transparent electrode 2a, a multilayered film mirror 4 formed on this photoconductor film 3, a first liquid crystal oriented film 5a formed on this multilayered film mirror 4, a second liquid crystal oriented film 5b formed on the transparent electrode 2b and a spacer 6. At least the one substrate is formed as a substrate having a shape recessed in a part in contact with the spacer 6 in the normal direction of the substrate surface.

5. 发明专利

JPH09115429A FIELD EMISSION TYPE ELECTRON SOURCE ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH09115429A
公开(公告)日：1997-05-02
申请号：JP27235795
申请日：1995-10-20
申请人： SHARP KK
发明人： URAYAMA MASAO , TAKEGAWA YOSHIYUKI , MORITA HIROKO , YANO MORICHIKA
IPC分类号： H01J9/02 , H01J1/30 , H01J1/304
摘要： PROBLEM TO BE SOLVED: To improve high reliability and element characteristics such as low voltage driving by shortening a distance between an electron emitting part and a gate electrode, and selecting various materials as a material of the electron emitting part. SOLUTION: This electron source element is formed by working a surface of a slicon substrate 3, and is composed of a silicon projecting part 1 being a cold cathode to emit an electron on the basis of the principle of electron emission and a gate electrode layer 5 arranged on the periphery of the silicon projecting part 1 through an insulating layer 4. An end part of the gate electrode layer 5 is formed in the shape of projecting so as to surround the tip of the silicon projecting part 1, and a space 6 is arranged so that a distance between the tip of the silicon projecting part 1 and an end part of the insulating layer 4 in the plane direction of the silicon substrate 3 becomes larger than a distance between the tip of the silicon projecting part 1 and an end part of the gate electrode layer 5 in the plane direction of the silicon substrate 3, and surface coat layers 2a and 2b are arranged on a surface in the tip vicinity of the silicon projecting part 1 and the gate electrode layer 5, and a field emission type electron source element is constituted.

6. 发明专利

JPH09106756A ELECTRIC FIELD EMISSION TYPE ELECTRON DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH09106756A
公开(公告)日：1997-04-22
申请号：JP26412995
申请日：1995-10-12
申请人： SHARP KK
发明人： YANO MORICHIKA , URAYAMA MASAO , TAKEGAWA YOSHIYUKI , TOKUMARU TERUTAKA , MORITA HIROKO , SAWAHATA JUNICHI
IPC分类号： H01J9/02 , H01J1/30 , H01J1/304 , H01J29/04 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To stabilize an anode current, and handle a heavy-current in an array without causing deterioration of integration and yield. SOLUTION: On an N type Si semiconductor substrate 1, a P type Si semiconductor layer 2, and an N type Si semiconductor layer 3 are successively stacked to manufacture a substrate having an NPN transistor structure. After the surface of the substrate is wet-oxidized to form a mask layer 4, patterning and etching are conducted on the mask layer 4 so as to form a circular mask 5. The substrate is etched via the mask 5 so as to form a protrusion portion 6 to be the base of a cold cathode. The surface of the protrusion portion 6- formed substrate is wet-oxidized to form a gate insulation film 7. On the gate insolation film 7, Nb is deposited to form a gate electrode 8, and the mask 5 is removed by etching causing the cold cathode 9 to be exposed.

7. 发明专利

JPH08273528A MANUFACTURE OF FIELD-EMISSION ELECTRON SOURCE AND ELEMENT STRUCTURE OF ELECTRON SOURCE FOR IT 失效
公开(公告)号：JPH08273528A
公开(公告)日：1996-10-18
申请号：JP7780095
申请日：1995-04-03
申请人： SHARP KK
发明人： YANO MORICHIKA , URAYAMA MASAO , TAKEGAWA HISASHI , MORITA HIROKO
IPC分类号： H01J1/30 , H01J1/304 , H01J9/02
摘要： PURPOSE: To prevent oxidation of an emitter and to simplify processes. CONSTITUTION: A cathode 2 is formed by evaporation of nickel over a glass substrate 1, and an insulating film 3 is formed by accumulation of silicon dioxide on the cathode 2 using sputtering method, after which nickel is evaporated over the insulating film 3 to form a gate electrode 4. A hole is formed on the glass substrate 1 by lithography for patterning. Next, the gate electrode 4 and the, insulating film 3 are selectively etched to form a hole 5 for formation of an emitter which releases electrons. Nickel is accumulated in the hole 5 by an evaporation method to form the emitter 6, following which sulfur serving as a high-vapor-pressure material is put over the emitter 6 to form a high-vapor- pressure material layer 7.

8. 发明专利

JPH0764105A SEPARATION OF WRITING LIGHT AND READING OUT LIGHT OF OPTICAL WRITING TYPE SPATIAL OPTICAL MODULATION ELEMENT 失效
公开(公告)号：JPH0764105A
公开(公告)日：1995-03-10
申请号：JP21035193
申请日：1993-08-25
申请人： SHARP KK
发明人： SATO SHUNICHI , TOKUMARU TERUTAKA , MORITA HIROKO
IPC分类号： G02F1/135
摘要： PURPOSE:To provide a method capable of separating writing light and reading out light by using a dielectric mirror layer and light shielding layer of a small layer thickness without using a dielectric mirror layer and light shielding layer. CONSTITUTION:Glass substrates la and 1b are respectively provided with transparent electrodes 2a and 2b consisting of ITO, etc., and further, an amorphous silicon hydride film which is a photoconductive layer 4 is formed on the transparent electrode 2a. Liquid crystal oriented films 3a and 3b for tilting and orienting nematic liquid crystals are formed on the photoconductive layer 4 and the transparent electrode 2b. A polarizing element 6a is installed on the writing side (photoconductive layer side) of the optical writing type spatial optical modulation element and a polarizing element 6b is installed on the reading out side (liquid crystal layer side). The polarized light beams of the writing light 8a and the reading out light 9a are intersected orthogonally with each other. The polarizing element 6a is so set as to prohibit the passage of the reading out light 9b and the polarizing element 6b to prohibit the passage of the writing light 8b.

9. 发明专利

JPH06222383A LIQUID CRYSTAL SPATIAL OPTICAL MODULATION ELEMENT 失效
公开(公告)号：JPH06222383A
公开(公告)日：1994-08-12
申请号：JP1258793
申请日：1993-01-28
申请人： SHARP KK
发明人： TOKUMARU TERUTAKA , MORITA HIROKO , SATO SHUNICHI
IPC分类号： G02F1/135
摘要： PURPOSE:To provide the liquid crystal spatial optical modulation element which exhibits sufficiently high diffraction efficiency at high spatial frequencies of several hundreds 1p/mm or more necessary for using in a holographic display and is applicable to the holographic display. CONSTITUTION:This liquid crystal spatial optical modulation element has a first glass substrate 1a and second glass substrate 1b formed with transparent electrodes 2a, 2b on the respective surfaces, a photoconductor film 3 formed on the transparent electrodes 2a, a multilayerd film mirror 4 formed on this photoconductor film 3, a first liquid crystal oriented film 5a formed on this multilayerd film mirror 4, a second liquid crystal oriented film 5b formed on the transparent electrode 2b and a liquid crystal layer 6 clamped between the first liquid crystal oriented film 5a and the second liquid crystal oriented film 5b. The multilayerd film mirror 4 is constituted of the multilayerd film mirror alternately laminated with high-refractive index photoconductor films and low- refractive index photoconductor films in multiple layers.

10. 发明专利

JPH0792484A DRIVING METHOD FOR LIQUID CRYSTAL SPATIAL OPTICAL MODULATION ELEMENT 失效
公开(公告)号：JPH0792484A
公开(公告)日：1995-04-07
申请号：JP23469293
申请日：1993-09-21
申请人： SHARP KK
发明人： TOKUMARU TERUTAKA , MORITA HIROKO , SATO SHUNICHI
IPC分类号： G02F1/135 , G02F1/133
摘要： PURPOSE:To vary the range of the intensity of a write light beam capable of effectively modulating or the range of the contrast of the intensity of the write light beam by varying a frequency of an AC voltage applied between a pair of electrodes as necessary. CONSTITUTION:When the AC voltage is applied to transparent electrodes 2a, 2b beforehand, a specifc resistance of a photoconductive film 4 is reduced in a part irradiated with the write light beam 7, and an applying voltage to a nematic liquid crystal layer 5 is increased, and when a threshold value of a liquid crystal is exceeded, the liquid crystal oriented along the surfaces of a glass substrate 1b and a dielectric mirror layer 10 is faced in the direction of the applying voltage. On the other hand, in the part irradiated with no write beam 7, since the liquid crystal is oriented along the surfaces of the glass substrate 1b and the dielectric mirror layer 10, no read beam 8a is phase-modulated, and becomes a reflection read light beam 8b. Then, in such a case, the frequency applied to the transparent electrodes 2a, 2b is varied for corresponding to the range of the intensity of the objective write light beam as necessary, and the liquid crystal spatial optical modulation element is driven.

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