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1. 发明专利

JP2001156378A LIGHT-EMITTING DEVICE AND ELECTRONIC EQUIPMENT ON WHICH LIGHT-EMITTING DEVICE IS LOADED 失效
公开(公告)号：JP2001156378A
公开(公告)日：2001-06-08
申请号：JP33708199
申请日：1999-11-29
申请人： SHARP KK
发明人： SHIMONAKA ATSUSHI , YAMAMOTO KEI , YAGI HISAHARU
IPC分类号： H01L33/00 , H01L33/48 , H01L33/56 , H01L33/58 , H01L33/62 , H01S5/022 , H04N5/00 , H04N5/64 , H04N7/22 , H04N21/647
摘要： PROBLEM TO BE SOLVED: To obtain an eye-safe light-emitting device having a large light- emitting diameter and a small far-field image. SOLUTION: The light-emitting device has at least a light-emitting chip and a molding resin, in which the light-emitting chip is housed and which has an optical diffusion function and a lens function on an end face, and the maximum width of a luminous pattern from the molding resin on a vertical surface in the luminous direction of the light-emitting chip is attained in the half or more of the width of the molding resin.

2. 发明专利

JPH11330635A GAIN-COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH11330635A
公开(公告)日：1999-11-30
申请号：JP7105799
申请日：1999-03-16
申请人： SHARP KK
发明人： YAMAMOTO KEI , KASAI SHUSUKE
IPC分类号： H01S5/00 , H01S5/12 , H01S5/34 , H01S5/343 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a gain-coupled distributed feedback type semiconductor laser device, having an active layer with little crystal defects and good element characteristics. SOLUTION: This gain-coupled distributed feedback type semiconductor laser device has a periodic gain variation in the resonance direction and comprises a semiconductor embedded layer 14 formed on a first periodic undulated part, formed along the resonator and longitudinally long active layer 15 on recesses of the first undulated part with the same period as that of the first undulated part.

3. 发明专利

JPH11103128A GAIN-COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH11103128A
公开(公告)日：1999-04-13
申请号：JP21014698
申请日：1998-07-27
申请人： SHARP KK
发明人： YAMAMOTO KEI , KASAI SHUSUKE , TANETANI MOTOTAKA
IPC分类号： H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a gain-coupled distributed feedback semiconductor laser device which can constitute a low-duty absorbent diffraction grating and in which a small absorption loss and a sufficient gain coupling coefficient can be controlled with good reproducibility, by a method wherein a light absorption layer is formed only on a valley part in an uneven shape and a buried layer is formed in a region which is adjacent to the remaining uneven shape. SOLUTION: A clad layer 11, an active layer 12, a guide layer 14 and the like are formed on an n-GaAs substrate 10 by an MOCVD method. In succession, an uneven shape (a triangular wave shape) whose cycle is about 120 nm and whose depth is about 70 nm is etched on the uppermost layer of a growth layer by a two-beam interference exposure method and an etching method. After that, a buried layer 16, a clad layer 17 and a contact layer 18 are regrown and formed by an MOCVD method. In addition, when the buried layer 16 is grown, vertical quantum well(VQW) structures 15 are formed along valley parts in the uneven shape. A VQW light absorption layer can constitute a low-duty absorbent diffraction grating in a self-aligned manner, and a low absorption loss and a sufficient gain coupling coefficient can be controlled with good reproducibility.

4. 发明专利

JPH09186394A DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER 失效
公开(公告)号：JPH09186394A
公开(公告)日：1997-07-15
申请号：JP34422495
申请日：1995-12-28
申请人： SHARP KK
发明人： ATSUNUSHI FUMIHIRO , TANETANI MOTOTAKA , TAKAHASHI KOJI , YAMAMOTO KEI
IPC分类号： H01S5/00 , H01S5/12 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To enable a DFB(distributed feedback) laser which is low in oscillation threshold value and excellent in uniaxial mode to be manufactured high in yield. SOLUTION: Linear projections 16a each trapezoidal in cross section are arranged on a surface part of an optical waveguide layer 15 which comes into contact with a light absorbing layer 17 at a regular cycle period in a propagation direction Ld in which induced emission light propagates, or linear projections are formed at a prescribed cycle period for the formation of a diffraction grating 16. The light absorbing layer 17 formed on the diffraction grating 16 is varied in thickness with its parts, or its part formed on regions (base of linear irregularities) between the adjacent linear projections 16a and the tops of the linear projections 16a is set different in thickness from its other part formed covering the sloping parts of the linear projections 16a.

5. 发明专利

JPH0969664A RIDGE WAVEGUIDE TYPE DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0969664A
公开(公告)日：1997-03-11
申请号：JP22336395
申请日：1995-08-31
申请人： SHARP KK
发明人： YAMAMOTO KEI , HIRAMATSU TAKUMA , TAKAHASHI KOJI , TANETANI MOTOTAKA
IPC分类号： H01S5/00 , H01S5/12 , H01S5/22 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To improve the reproducibility and production yield of a laser element by forming a stripe-like ridge structure on a semiconductor layer having a diffraction lattice the roughness of which is gradually reduced to provide a low-roughness surface. SOLUTION: On a semiconductor substrate 10 a clad layer 11, an active layer 12, a carrier barrier layer 13, a guide layer 14 and an optical absorptive layer 15 are formed and a diffraction lattice is formed on the uppermost layer of these grown layers. The lattice has a grating shape and the roughness of the grating is within 15nm. Then a guide buried layer 16, a clad layer 17 and a contact layer 18 are formed. The layer 16 is processed to reduce the roughness of the grating into a nearly flat buried layer owing to which the other upper grown layers become flat. After removing the contact layer 18 outside an optical guide stripe, the layer 17 is selectively etched off to form a stripe-like ridge structure.

6. 发明专利

JP2003152281A SEMICONDUCTOR LASER DEVICE AND OPTICAL DISK DEVICE USING THE SAME 审中-公开
公开(公告)号：JP2003152281A
公开(公告)日：2003-05-23
申请号：JP2001350030
申请日：2001-11-15
申请人： SHARP KK
发明人： FUJISHIRO YOSHIE , OBAYASHI TAKESHI , YAMAMOTO KEI
IPC分类号： H01S5/223 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To reduce the threshold current of a semiconductor laser device having a 780 nm band InGaAsP well layer. SOLUTION: A well layer is formed of InGaAsP whose P composition is smaller than 0.55 but equal to 0.51, and spinodal decomposition is restrained from occurring when InGaAsP is grown. The compressive strain of the well layer is set smaller than 1% but larger than 0.25% and equal to 0.65% so as to reduce a threshold current. An active region 15 is prevented from deteriorating, and a threshold current is reduced, so that a wavelength 780 nm band InGaAsP well layer semiconductor laser device which operates stably for a long hours, outputting a high power of 100 mW or above can be obtained. Furthermore, a tensile strain of -1.2% is introduced into a barrier layer inside the active region 15 so as to make up for stress caused by the compressive strain of the well layer, by which the semiconductor laser can be improved in reliability when it outputs a high power.

7. 发明专利

JP2000357789A OPTICAL INTEGRATED ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JP2000357789A
公开(公告)日：2000-12-26
申请号：JP17036199
申请日：1999-06-16
申请人： SHARP KK
发明人： YAMAMOTO KEI
IPC分类号： H01L27/15 , G02B6/122 , H01S5/00 , H01S5/026 , H01S5/12
摘要： PROBLEM TO BE SOLVED: To integrate into each other easily by a direct coupling ridge and buried optical waveguides having respectively desired characteristics and functions, by forming the core layers of at least one of the optical waveguides in the top and bottom portions of a mesa type region. SOLUTION: The height of an active layer 12 of a DFB-LD formed previously and the height of a core layer 19 of the upper portion of the ridge of an optical waveguide formed posteriorly by a regrowth are made equal to each other. Since the light emitted from the DFB-LD is coupled directly to the core layer 19, a large coupling efficiency is obtained. Also, by forming simultaneously a ridge in the optical waveguide region too through the ridge forming process of the DFB-LD, this ridge is utilized to form the buried structure of the optical waveguide by an etching and a regrowth. Therefore, the ridge and buried optical waveguides can be created by very simple processes to make possible the cutting-down and simplification of their manufacturing processes. In this way, an optical waveguide integrated element can be manufactured easily wherein the different optical confinement structures from each other of the ridge and buried optical waveguides are directly coupled to each other, and their high coupling effects are obtained.

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