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1. 发明专利

JPH05295527A 失效
公开(公告)号：JPH05295527A
公开(公告)日：1993-11-09
申请号：JP19920991
申请日：1991-08-08
申请人： RIKAGAKU KENKYUSHO , JEOL LTD
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , KOBUNA SADATOSHI
IPC分类号： C23C14/32
摘要： PURPOSE:To develop ion plating device having the excellent efficiency of utilizing electrons by providing a reflection plate for the electrons from a plasma generator in a vapor deposition chamber of the ion plating device. CONSTITUTION:The inside of a plasma forming device 9 and the vacuum vapor deposition chamber 1 connected thereto is evacuated to a vacuum and gaseous Ar is gradually supplied from a gas supplying pipe 15 of a plasma forming device, simultaneously with which the electrons are released by energizing a hot cathode 10. A voltage is then impressed between the hot cathode 10 and a discharge electrode 12 to generate a discharge. Ar molecules are ionized by the electrons from the hot cathode 10 to generate plasma P. The electrons formed therein advance rectilinearly in the vapor deposition chamber 1. On the other hand, a raw material 3 for vapor deposition in a crucible 2 is heated and evaporated by the electrons from a filament 4 and collide against the electrons from the plasma forming device 9, by that, the raw material is ionized and a vapor deposited film is formed on a substrate 6. The electrons are partly not utilized and advance rectilinearely and, therefore, these electrons are reflected by the reflection electrode 21 to irradiate and evaporate the raw material 3 for vapor deposition in the crusible 2. The electrons are thus effectively utilized for the vapor deposition effect.

2. 发明专利

JPH05299193A 失效
公开(公告)号：JPH05299193A
公开(公告)日：1993-11-12
申请号：JP19920791
申请日：1991-08-08
申请人： RIKAGAKU KENKYUSHO , JEOL LTD
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , KUSAKABE KAZUTOSHI
IPC分类号： H05H1/00 , C23C14/32 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/24
摘要： PURPOSE:To provide a plasma generating device having extremely little ablation of a filament and a long life. CONSTITUTION:A needle valve 16 is gradually opened, and argon gas is introduced into a plasma generating device 9. A filament AC power source 26 is turned on, and the filament current If is gradually increased to the filament rated temperature. When a discharge power source 20 is turned on and the discharge voltage is applied, an electric discharge is started, and a discharge current Id flows. When the discharge current Id is increased, the sum of the filament heating current If and the discharge current Id/2 is detected by a detecting resistor 29 on the secondary side of a filament transformer, and this detection signal is fed to an error amplifier 30. The detected current value is compared with the rated current value by the error amplifier 30, a thyristor 31 is controlled based on the difference signal, and an increment of 1/2 of the discharge current Id is automatically subtracted from the heating current fed to a filament 10.

3. 发明专利

JPH05326188A PLASMA GENERATING DEVICE 失效
公开(公告)号：JPH05326188A
公开(公告)日：1993-12-10
申请号：JP19920891
申请日：1991-08-08
申请人： RIKAGAKU KENKYUSHO , JEOL LTD
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , KUSAKABE KAZUTOSHI
IPC分类号： C23C14/32 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/00 , H05H1/24
摘要： PURPOSE:To suppress plasma vibration and take out a charged particle having less energy width. CONSTITUTION:An intermediate electrode 11 is insulated from a filament chamber F and a discharge chamber D, and connected to the plus side of a discharge power source 20 through a load resistor 21. A screen electrode 12 is insulated from the discharge chamber D and an accelerating chamber A, and connected to the plus side of the discharge power source 20. An accelerating electrode 13 is insulated from the accelerating chamber A and a chamber 1, and connected to the plus side of an accelerating power source 22. The plus side of the accelerating power source 22 is connected to an earth, and the minus side to the plus side of the discharge power source 20. A filament 10 is connected to an AC power source 25 through a filament transformer 24. A capacitor 31 is inserted between the screen electrode 12 and the accelerating electrode 13. When the capacitor 31 is inserted, plasma vibration is remarkably minimized.

4. 发明专利

JP2001237455A InAlGaN EMITTING LIGHT IN SHORT-WAVELENGTH REGION OF ULTRAVIOLET REGION, ITS MANUFACTURING METHOD AS WELL AS ULTRAVIOLET LIGHT-EMITTING ELEMENT USING THE SAME 失效
公开(公告)号：JP2001237455A
公开(公告)日：2001-08-31
申请号：JP2000045318
申请日：2000-02-23
申请人： RIKAGAKU KENKYUSHO , HIRAYAMA HIDEKI
发明人： HIRAYAMA HIDEKI , AOYANAGI KATSUNOBU
IPC分类号： C01G15/00 , C23C16/34 , H01L33/06 , H01L33/32 , H01L33/34 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To emit light at room temperature and with high efficiency in a short-wavelength region as an ultraviolet region at a wavelength of 360 nm or shorter. SOLUTION: The composition ratio of In is set at 2 to 20%. The composition ratio of Al is set at 10 to 90%, and the total of the composition ratios of In, Al and Ga is set so that it becomes 100%.

5. 发明专利

JP2000244308A SINGLE MAGNETIC FLUX QUANTUM DIGITAL ELEMENT 失效
公开(公告)号：JP2000244308A
公开(公告)日：2000-09-08
申请号：JP4014199
申请日：1999-02-18
申请人： RIKAGAKU KENKYUSHO
发明人： KANDA AKINOBU , ISHIBASHI KOJI , AOYANAGI KATSUNOBU , SUGANO TAKUO
IPC分类号： H03K19/195 , B82B1/00 , H01L39/22
摘要： PROBLEM TO BE SOLVED: To provide a high speed single magnetic flux quantum digital element with low power consumption where a circuit design similar to that of an existing semiconductor element can easily be realized. SOLUTION: The single magnetic flux quantum digital element 10 is provided with a 1st superconducting line 1a extending in a ring, a 2nd superconducting line 1b connected to the 1st superconducting line 1a, a superconducting single electron transistor(TR)2 to increase/decrease a superconducting current flowing through the 2nd superconducting line 1b, and a micro tunnel junction element 5 to detect a change in a superconducting current through the 1st superconducting line 1a. The 1st superconducting line 1a forms a large ring extending along a path ABCDA and the 2nd superconducting line 1b divides the large ring path ABCDA into two small rings AEFDA and EBCFE. The two small rings AEFDA and EBCFE have nearly the same shape and area, and the micro tunnel junction element 5 is connected to a connecting point E between the 1st superconducting line 1a and the 2nd superconducting line 1b.

6. 发明专利

JP2000196191A LASER AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2000196191A
公开(公告)日：2000-07-14
申请号：JP37203298
申请日：1998-12-28
申请人： RIKAGAKU KENKYUSHO
发明人： CHO SHINI , KOMURO SHUJI , ISSHIKI HIDEO , AOYANAGI KATSUNOBU , SUGANO TAKUO
IPC分类号： H01S5/30 , H01L21/203 , H01S3/063 , H01S3/16 , H01S5/00
摘要： PROBLEM TO BE SOLVED: To provide a laser that can be created on an Si substrate and permits an optical device, such as a light memory, to be manufactured on the Si substrate, and its manufacturing method. SOLUTION: The strip structure of a nano microcrystalline Si film layer, where rare earth elements are doped, is produced on an oxide film layer 104 that is formed on an Si substrate 102, an oxide film layer 108 is deposited on the strip structure of the nano microcrystalline Si film layer 106 where the rare earth elements are doped, the oxide film layer 108 is deposited on the strip structure, and then cleaving is made, thus producing an optical waveguide 110.

7. 发明专利

JP2000140781A METHOD AND DEVICE FOR CLEANING AND INTERPRETING CONDITION OF OBJECT SURFACE 失效
公开(公告)号：JP2000140781A
公开(公告)日：2000-05-23
申请号：JP31575198
申请日：1998-11-06
申请人： RIKAGAKU KENKYUSHO , DATA STRAGE INST
发明人： RIKU EIFU , AOYANAGI KATSUNOBU
IPC分类号： B08B7/00 , B05C11/00 , B05D3/06 , B05D3/10 , G01N29/00
摘要： PROBLEM TO BE SOLVED: To automatically clean a deposit and confirm the condition of a cleaning progress by removing a deposit on the surface of an object by the emission of a pulse laser and, at the same time, interpreting the surface condition based on a sonic wave to be generated from the surface. SOLUTION: A pulse beam is outputted from a KrF excimer laser oscillator 10 and the energy density is made homogeneous by an optical device 12 to adjust the beam diameter. Further, this beam is emitted to the coated surface of an object 100 to remove the coating material. In addition, a sonic wave generated, attended with the emission of a laser pulse, is detected using a microphone 24, and a control part 22 reads the digital signal of the sonic wave each time one laser pulse is emitted. Next the control part 22 compares the generated sonic wave parameter of the sonic wave which has been read with a standard sonic wave parameter and interprets that the applied coating material is removed from the surface of the object 100, when a preset criterion is met. The laser oscillator 10 further travels on a stage 16 to perform a treatment for removing a coating material present in the other area of the surface of the object 100.

8. 发明专利

JP2879343B2 失效
公开(公告)号：JP2879343B2
公开(公告)日：1999-04-05
申请号：JP7751989
申请日：1989-03-29
申请人： RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , ANDO GOZO , AOYANAGI KATSUNOBU
IPC分类号： H01S3/094 , H01S4/00

9. 发明专利

JP2860253B2 失效
公开(公告)号：JP2860253B2
公开(公告)日：1999-02-24
申请号：JP16575094
申请日：1994-06-27
申请人： RIKAGAKU KENKYUSHO , KAWASAKI JUKOGYO KK
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , RYUJI MAKOTO , TOKAI MASAKUNI
IPC分类号： H05H1/24 , C23F4/00 , H01L21/027 , H01L21/302 , H01L21/3065

10. 发明专利

JPH1012860A FORMATION OF MICRO TUNNEL JOINT AND MICRO TUNNEL JOINT ELEMENT 失效
公开(公告)号：JPH1012860A
公开(公告)日：1998-01-16
申请号：JP15807896
申请日：1996-06-19
申请人： RIKAGAKU KENKYUSHO
发明人： SUGANO TAKUO , ISSHIKI HIDEO , AOYANAGI KATSUNOBU
IPC分类号： H01L29/06 , H01L29/66 , H01L29/88 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a method for forming micro tunnel joints with extremely high dimensional accuracy and a micro tunnel joint element having such a structure to facilitate integration. SOLUTION: Thin films of different kinds are grown and laminated laterally in the inplane direction of a substrate, so as to form micro tunnel joints 13 and 14. The lateral growth of thin film in crystal plane direction can be performed by introducing a step 11 having specified orientation and height on the crystal plane by means of step bunching, etc., and selectively growing an atomic layer on the crystal plane of the step.

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