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1. 发明专利

JP2000140781A METHOD AND DEVICE FOR CLEANING AND INTERPRETING CONDITION OF OBJECT SURFACE 失效
公开(公告)号：JP2000140781A
公开(公告)日：2000-05-23
申请号：JP31575198
申请日：1998-11-06
申请人： RIKAGAKU KENKYUSHO , DATA STRAGE INST
发明人： RIKU EIFU , AOYANAGI KATSUNOBU
IPC分类号： B08B7/00 , B05C11/00 , B05D3/06 , B05D3/10 , G01N29/00
摘要： PROBLEM TO BE SOLVED: To automatically clean a deposit and confirm the condition of a cleaning progress by removing a deposit on the surface of an object by the emission of a pulse laser and, at the same time, interpreting the surface condition based on a sonic wave to be generated from the surface. SOLUTION: A pulse beam is outputted from a KrF excimer laser oscillator 10 and the energy density is made homogeneous by an optical device 12 to adjust the beam diameter. Further, this beam is emitted to the coated surface of an object 100 to remove the coating material. In addition, a sonic wave generated, attended with the emission of a laser pulse, is detected using a microphone 24, and a control part 22 reads the digital signal of the sonic wave each time one laser pulse is emitted. Next the control part 22 compares the generated sonic wave parameter of the sonic wave which has been read with a standard sonic wave parameter and interprets that the applied coating material is removed from the surface of the object 100, when a preset criterion is met. The laser oscillator 10 further travels on a stage 16 to perform a treatment for removing a coating material present in the other area of the surface of the object 100.

2. 发明专利

JP2001237455A InAlGaN EMITTING LIGHT IN SHORT-WAVELENGTH REGION OF ULTRAVIOLET REGION, ITS MANUFACTURING METHOD AS WELL AS ULTRAVIOLET LIGHT-EMITTING ELEMENT USING THE SAME 失效
公开(公告)号：JP2001237455A
公开(公告)日：2001-08-31
申请号：JP2000045318
申请日：2000-02-23
申请人： RIKAGAKU KENKYUSHO , HIRAYAMA HIDEKI
发明人： HIRAYAMA HIDEKI , AOYANAGI KATSUNOBU
IPC分类号： C01G15/00 , C23C16/34 , H01L33/06 , H01L33/32 , H01L33/34 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To emit light at room temperature and with high efficiency in a short-wavelength region as an ultraviolet region at a wavelength of 360 nm or shorter. SOLUTION: The composition ratio of In is set at 2 to 20%. The composition ratio of Al is set at 10 to 90%, and the total of the composition ratios of In, Al and Ga is set so that it becomes 100%.

3. 发明专利

JP2000244308A SINGLE MAGNETIC FLUX QUANTUM DIGITAL ELEMENT 失效
公开(公告)号：JP2000244308A
公开(公告)日：2000-09-08
申请号：JP4014199
申请日：1999-02-18
申请人： RIKAGAKU KENKYUSHO
发明人： KANDA AKINOBU , ISHIBASHI KOJI , AOYANAGI KATSUNOBU , SUGANO TAKUO
IPC分类号： H03K19/195 , B82B1/00 , H01L39/22
摘要： PROBLEM TO BE SOLVED: To provide a high speed single magnetic flux quantum digital element with low power consumption where a circuit design similar to that of an existing semiconductor element can easily be realized. SOLUTION: The single magnetic flux quantum digital element 10 is provided with a 1st superconducting line 1a extending in a ring, a 2nd superconducting line 1b connected to the 1st superconducting line 1a, a superconducting single electron transistor(TR)2 to increase/decrease a superconducting current flowing through the 2nd superconducting line 1b, and a micro tunnel junction element 5 to detect a change in a superconducting current through the 1st superconducting line 1a. The 1st superconducting line 1a forms a large ring extending along a path ABCDA and the 2nd superconducting line 1b divides the large ring path ABCDA into two small rings AEFDA and EBCFE. The two small rings AEFDA and EBCFE have nearly the same shape and area, and the micro tunnel junction element 5 is connected to a connecting point E between the 1st superconducting line 1a and the 2nd superconducting line 1b.

4. 发明专利

JP2000196191A LASER AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2000196191A
公开(公告)日：2000-07-14
申请号：JP37203298
申请日：1998-12-28
申请人： RIKAGAKU KENKYUSHO
发明人： CHO SHINI , KOMURO SHUJI , ISSHIKI HIDEO , AOYANAGI KATSUNOBU , SUGANO TAKUO
IPC分类号： H01S5/30 , H01L21/203 , H01S3/063 , H01S3/16 , H01S5/00
摘要： PROBLEM TO BE SOLVED: To provide a laser that can be created on an Si substrate and permits an optical device, such as a light memory, to be manufactured on the Si substrate, and its manufacturing method. SOLUTION: The strip structure of a nano microcrystalline Si film layer, where rare earth elements are doped, is produced on an oxide film layer 104 that is formed on an Si substrate 102, an oxide film layer 108 is deposited on the strip structure of the nano microcrystalline Si film layer 106 where the rare earth elements are doped, the oxide film layer 108 is deposited on the strip structure, and then cleaving is made, thus producing an optical waveguide 110.

5. 发明专利

JP2879343B2 失效
公开(公告)号：JP2879343B2
公开(公告)日：1999-04-05
申请号：JP7751989
申请日：1989-03-29
申请人： RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , ANDO GOZO , AOYANAGI KATSUNOBU
IPC分类号： H01S3/094 , H01S4/00

6. 发明专利

JP2860253B2 失效
公开(公告)号：JP2860253B2
公开(公告)日：1999-02-24
申请号：JP16575094
申请日：1994-06-27
申请人： RIKAGAKU KENKYUSHO , KAWASAKI JUKOGYO KK
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , RYUJI MAKOTO , TOKAI MASAKUNI
IPC分类号： H05H1/24 , C23F4/00 , H01L21/027 , H01L21/302 , H01L21/3065

7. 发明专利

JPH1012860A FORMATION OF MICRO TUNNEL JOINT AND MICRO TUNNEL JOINT ELEMENT 失效
公开(公告)号：JPH1012860A
公开(公告)日：1998-01-16
申请号：JP15807896
申请日：1996-06-19
申请人： RIKAGAKU KENKYUSHO
发明人： SUGANO TAKUO , ISSHIKI HIDEO , AOYANAGI KATSUNOBU
IPC分类号： H01L29/06 , H01L29/66 , H01L29/88 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a method for forming micro tunnel joints with extremely high dimensional accuracy and a micro tunnel joint element having such a structure to facilitate integration. SOLUTION: Thin films of different kinds are grown and laminated laterally in the inplane direction of a substrate, so as to form micro tunnel joints 13 and 14. The lateral growth of thin film in crystal plane direction can be performed by introducing a step 11 having specified orientation and height on the crystal plane by means of step bunching, etc., and selectively growing an atomic layer on the crystal plane of the step.

8. 发明专利

JPH09295891A RARE EARTH ELEMENT-DOPED-SILICON MATERIAL AND ITS PRODUCTION 失效
公开(公告)号：JPH09295891A
公开(公告)日：1997-11-18
申请号：JP13284696
申请日：1996-04-30
申请人： RIKAGAKU KENKYUSHO
发明人： CHIYOU SHINI , KOMURO SHUJI , AOYANAGI KATSUNOBU , SUGANO TAKUO
IPC分类号： C30B28/00 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To produce a rare earth element-doped Si material, having a high luminous efficiency and applicable to an optical device and provide a method for producing the Si material. SOLUTION: This rare earth element-doped Si material is prepared by doping an Si material formed of an ultramicro-crystal with a rare earth element and is capable of manifesting the visible light emission of the Si material formed of the ultramicro-crystal and the infrared and visible light emissions of the rare earth element. The ion implantation of the rare earth element into a high- purity amorphous Si thin film can be carried out to produce the rare earth element doped Si material by using atoms of the rare earth element as nuclei or the laser ablation can directly be used to produce the rare earth element- doped Si material from an Si target containing the rare earth element added thereto.

9. 发明专利

JP2587629B2 失效
公开(公告)号：JP2587629B2
公开(公告)日：1997-03-05
申请号：JP2130387
申请日：1987-01-31
申请人： TOKYO EREKUTORON KK , RIKAGAKU KENKYUSHO
发明人： ISHII NOBUO , TAKAYAMA NAOKI , KAWAMURA GOHEI , HARA TAMIO , HAMAGAKI MANABU , NANBA SUSUMU , AOYANAGI KATSUNOBU
IPC分类号： H05H1/24 , H01J37/32 , H01L21/302

10. 发明专利

JPH08194100A X-RAY MICROSCOPE AND X-RAY GENERATING APPARATUS 失效
公开(公告)号：JPH08194100A
公开(公告)日：1996-07-30
申请号：JP547795
申请日：1995-01-18
申请人： SHIMADZU CORP , RIKAGAKU KENKYUSHO
发明人： HIROSE HIDEO , HARA TAMIO , ANDO KOZO , AOYANAGI KATSUNOBU
IPC分类号： G21K5/02 , G21K7/00 , H05G1/26
摘要： PURPOSE: To provide an x-ray generating apparatus which can prevent scattered particulates from being emitted by keeping a distance in one side of a target material and forming an x-ray transmissive film with just enough thickneess to prevent damage by effects following an x-ray generating process. CONSTITUTION: Plasma generated by laser beam irradiation is closed in a space 14 surrounded with an x-ray generating target 11 and an x-ray transmissive film 12 and efficient x-ray generation is performed. In this case, a hole as small as 0.1μm diameter is opened in the x-ray generating target 11 by laser beam 30. The generated x-ray is emitted to a specimen side after being transmitted through the x-ray transmissive film 12 and at the same time radiates the laser source side through the hole. On the other hand, the particulates generated from plasma come into collision against the x-ray transmissive film 12 and the kinetic energy of the particles are absorbed and the particulates are retarded, do not pass the x-ray transmissive film 12, and are captured by the x-ray transmissive film 12. Consequently, scattered particulates adhere to the x-ray transmissive film 12 and emission of the scattered particulates are inhibited.

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