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1. 发明专利

JP2013214093A Pattern data creation method, mask creation method, manufacturing method of semiconductor device, pattern creation method and program 有权
标题翻译：图形数据创建方法，掩模创建方法，半导体器件的制造方法，图形创建方法和程序
公开(公告)号：JP2013214093A
公开(公告)日：2013-10-17
申请号：JP2013133621
申请日：2013-06-26
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： ABE TAKAYUKI , SHIBATA HAYATO , KATO YASUO , MATSUMOTO YASUSHI , YASHIMA JUN , IIJIMA TOMOHIRO
IPC分类号： G03F1/70 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method of accurately correcting dimensional fluctuation even in a case where the size of a graphic pattern is the same degree as or sufficiently larger than the influence range of a phenomenon causing the dimensional fluctuation in the graphic pattern after drawing.SOLUTION: A pattern data creation method includes a step (S102) of setting a representative point on a side of a graphic pattern defined by a design dimension, a step (S104) of acquiring a correction amount of the representative point by solving an equation in which the correction amount of the representative point for correcting, using electronic beam, dimensional fluctuation generated in the graphic pattern after drawing the graphic pattern on a mask substrate for exposure is unknown; and a step (S106) of resizing the dimension of the graphic pattern so that the representative point in which the correction amount has been corrected is positioned on a corresponding side. According to this invention, even in a case where the size of a graphic is the same degree as or sufficiently larger than the influence range of a phenomenon, dimensional fluctuation due to the case can be accurately corrected.
摘要翻译：要解决的问题：即使在图形尺寸与绘制后的图形中的尺寸波动的现象的影响范围相同或足够大的情况下，也能够精确地校正尺寸波动的方法解决方案：图案数据创建方法包括：设置由设计维度定义的图形的一侧的代表点的步骤（S102）;通过求解方程式来获取代表点的校正量的步骤（S104）其中用于校正使用电子束的代表点的校正量在绘制用于曝光的掩模衬底上的图形之后在图形中产生的尺寸波动是未知的; 以及调整图形尺寸的尺寸的步骤（S106），使得校正量已被校正的代表点位于相应的一侧。根据本发明，即使在图形的尺寸与现象的影响范围相同或充分大的情况下，也可以准确地校正由于该情况引起的尺寸变动。

2. 发明专利

JP2011171465A Method for manufacturing exposure mask 有权
标题翻译：制造曝光掩模的方法
公开(公告)号：JP2011171465A
公开(公告)日：2011-09-01
申请号：JP2010033134
申请日：2010-02-18
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： KAWAGUCHI MICHIHIRO , TOMIYOSHI CHIKAO , YOSHITAKE HIDESUKE , IIJIMA TOMOHIRO
IPC分类号： H01L21/027 , G03F1/40 , G03F1/76 , G03F1/78 , G03F7/20 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a mask capable of removing electric charges charged on a resist when drawing a second time even though a negative type resist is used in a first time patterning. SOLUTION: A method for manufacturing an exposure mask includes: forming a conductive light-shielding film and a negative type first resist film on a substrate in sequence; drawing a first pattern on the substrate with the use of electron beam by cutting in an earth member so as to penetrate to the light-shielding film layer; forming a first resist pattern by developing the substrate after the drawing; etching the light-shielding film with the first resist pattern for a mask; forming a second resist film and an antistatic film on the etched light-shielding film in sequence; and drawing a second pattern on the substrate with the use of the electron beam by cutting in the earth member at the position different from when drawing the first pattern so as to penetrate from over the substrate to the light-shielding film layer. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造掩模的方法，即使在第一次图案化中使用负型抗蚀剂时，也可以在第二次抽取抗蚀剂时除去电荷。解决方案：一种制造曝光掩模的方法包括：依次在基板上形成导电遮光膜和负型第一抗蚀膜; 通过在地球构件中切割使用电子束将衬底上的第一图案拉到遮光膜层; 通过在拉拔之后使衬底显影来形成第一抗蚀剂图案; 用第一掩模图案蚀刻遮光膜; 依次在蚀刻后的遮光膜上形成第二抗蚀剂膜和抗静电膜; 以及通过在不同于绘制第一图案的位置处在接地构件中切割从而使衬底上的第二图案从衬底上穿透到遮光膜层而在衬底上绘制第二图案。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010219449A Charged particle beam plotting method, charged particle beam plotter, and program 有权
标题翻译：充电颗粒光束投影方法，充电粒子光束投影仪和程序
公开(公告)号：JP2010219449A
公开(公告)日：2010-09-30
申请号：JP2009067077
申请日：2009-03-18
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： KATO YASUO , MATSUMOTO YASUSHI , MOTOSUGI TOMOO , YASHIMA JUN , IIJIMA TOMOHIRO
IPC分类号： H01L21/027 , G03F1/20 , G03F1/68
摘要： PROBLEM TO BE SOLVED: To provide a charged particle beam plotting method, and a charged particle beam plotter which can precisely acquire an amount of correction radiation of charged particle beams without dropping throughput, and a program therefor. SOLUTION: The amount of irradiation for proximity effect correction which corrects a proximity effect in the charged particle beam plotting is computed. A first amount of dimensional fluctuation in a pattern caused by a loading effect depending upon a pattern distribution of a first area is computed. A ratio, to the amount of irradiation for proximity effect correction in an area including a beam irradiation position, of the amount of irradiation for proximity effect correction in an area apart from this area by a predetermined distance is computed. A second amount of dimensional fluctuation which is the total of the first amount of dimensional fluctuation and an amount of dimensional fluctuation caused by the loading effect depending upon the pattern distribution of a second area smaller than the first area is obtained in accordance with the amount of irradiation for proximity effect correction, the first amount of dimensional fluctuation, and the ratio. An amount of irradiation for loading effect correction which corrects the obtained second amount of dimensional fluctuation is combined with the amount of irradiation for proximity effect correction. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种带电粒子束绘图方法，以及可以精确地获取带电粒子束的校正辐射量而不降低生产量的带电粒子束绘图仪及其程序。解决方案：计算校正带电粒子束绘图中的邻近效应的邻近效应校正的照射量。计算由根据第一区域的图案分布的负载效应引起的图案中的第一尺寸波动量。计算与除了该区域相距一定距离的区域中的用于邻近效应校正的照射量的比率与包括光束照射位置的区域中的邻近效应校正的照射量的比率。根据根据第一区域的第二区域的图案分布，由第一量尺寸波动的总和和由依赖于第二区域的图案分布的负载效应引起的尺寸波动量的第二量的尺寸波动获得照射用于邻近效应校正，第一量尺寸波动和比率。用于校正所获得的第二量尺寸波动量的负载效应校正的照射量与用于邻近效应校正的照射量相结合。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009302480A Charged particle beam drawing apparatus and charged particle beam drawing method 有权
标题翻译：充电颗粒光束绘图装置和充电颗粒光束绘图方法
公开(公告)号：JP2009302480A
公开(公告)日：2009-12-24
申请号：JP2008158336
申请日：2008-06-17
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： KATO YASUO , YASHIMA JUN , MATSUMOTO YASUSHI , IIJIMA TOMOHIRO , ABE TAKAYUKI
IPC分类号： H01L21/027 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for improving fog correction accuracy without depending upon the layout of a pattern. SOLUTION: The drawing apparatus 100 includes a calculation unit 116 which calculates a proximity effect correction irradiation amount d(x) of electron beam drawing for each first mesh area, a calculation unit 112 which calculates a proximity effect correction irradiation amount d'(x) for each second mesh area larger than the first mesh area, an interpolation unit 113 which interpolates the proximity effect correction irradiation amount d'(x) to the area gravity center position of a figure in the second mesh area for each second mesh area, a calculation unit 114 which calculates a fog correction irradiation amount F(x) using the interpolated proximity effect correction irradiation amount d'(x) for each third mesh area, a composition unit 118 which puts the fog correction irradiation amount F(x) and proximity effect correction irradiation amount d(x) together, and a drawing unit 150 which performs drawing based upon the composited correction irradiation amount. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于提高雾化校正精度的装置，而不依赖于图案的布局。解决方案：绘图装置100包括：计算单元116，其计算每个第一网格区域的电子束描绘的邻近效应校正照射量d（x）;计算单元112，其计算邻近效应校正照射量d' （x）对于大于第一网格区域的每个第二网格区域，插值单元113将邻近效应校正照射量d'（x）内插到第二网格区域中的每个第二网格上的图形的区域重心位置计算单元114，其使用每个第三网格区域的内插邻近效应校正照射量d'（x）计算雾化校正照射量F（x），将灰雾校正照射量F（x ）和邻近效应校正照射量d（x），以及基于合成校正照射量进行绘图的绘制单元150。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2012243969A Charged particle beam lithography apparatus and charged particle beam lithography method 有权
标题翻译：充电颗粒光束光刻装置和充电颗粒光束光刻方法
公开(公告)号：JP2012243969A
公开(公告)日：2012-12-10
申请号：JP2011113007
申请日：2011-05-20
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： WAKE SEIJI , HAYASHI AYAKO , IIJIMA TOMOHIRO , SENGOKU YASUO
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To realize more accurate alignment than ever when patterns are drawn one layer on top of another.SOLUTION: A lithography apparatus comprises: a mark position measurement part which measures plural mark positions on a substrate on which plural marks have been formed along with a first-layer pattern from the result obtained by scanning those marks with an electron beam; a correction part which corrects the amount of displacement of the N'th order component of the plural mark positions; an abnormal mark detection part which detects an abnormal mark among the corrected plural mark positions; a mark rejection part which eliminates abnormal mark positions within a prescribed number of marks out of the detected abnormal marks; an alignment calculation part which calculates alignment by using plural mark positions left behind after the abnormal mark positions within a prescribed number of marks have been eliminated; and a drawing part which draws a second-layer pattern at the aligned position.
摘要翻译：要解决的问题：当模式被绘制在另一层之上时，实现比以往更准确的对准。光刻设备包括：标记位置测量部分，从通过用电子束扫描这些标记获得的结果，测量已经形成有多个标记的基板上的多个标记位置以及第一层图案; 校正部，其校正所述多个标记位置的N阶分量的位移量; 异常标记检测部，其检测所述经修正的多个标记位置之间的异常标记; 标记拒绝部，其从检测到的异常标记中除去规定数量的标记内的异常标记位置; 在消除了规定数量的标记之后的异常标记位置之后通过使用多个标记位置来计算对准的对准计算部分; 以及在对准位置绘制第二层图案的绘图部分。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2009075068A Device and method for inspecting pattern 审中-公开
标题翻译：用于检查图案的装置和方法
公开(公告)号：JP2009075068A
公开(公告)日：2009-04-09
申请号：JP2008157399
申请日：2008-06-17
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： ABE TAKAYUKI , IIJIMA TOMOHIRO , TSUCHIYA HIDEO , ARAI TETSUYUKI
IPC分类号： G01N21/956
摘要： PROBLEM TO BE SOLVED: To provide an inspection device that uses a pulse light source of short wavelength. SOLUTION: The inspection device 100 described one mode of the invention includes a pulse light source 150 for generating a pulse light, an XYθ table 102 for mounting a photomask 101, a plurality of light-receiving elements arranged two-dimensionally, a two-dimensional sensor array 105 for imaging a pattern image in the two-dimensional region of the photomask 101 which is irradiated with the pulse light using the plurality of light-receiving elements, and a comparison circuit 108 for comparing the data of the pattern image and the data of a predetermined reference pattern, in which a stage moves so as to shift only the multiples of the number of pixels of natural number between pulses of the pulse light. This device enables suppression of increase in the inspection times and reduction in the errors of the light intensity, even when a pulse light source with a short wavelength is employed. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供使用短波长的脉冲光源的检查装置。解决方案：描述本发明的一种模式的检查装置100包括用于产生脉冲光的脉冲光源150，用于安装光掩模101的XYθ表102，二维布置的多个光接收元件，二维传感器阵列105，用于对使用多个光接收元件照射脉冲光的光掩模101的二维区域中的图案图像成像;以及比较电路108，用于比较图案图像的数据以及其中阶段移动以便仅在脉冲光的脉冲之间移动自然数的像素数的倍数的预定参考图案的数据。即使使用短波长的脉冲光源，也能够抑制检查时间的增加和光强度的误差的降低。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2007059429A Method for verifying data 有权
标题翻译：验证数据的方法
公开(公告)号：JP2007059429A
公开(公告)日：2007-03-08
申请号：JP2005239444
申请日：2005-08-22
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： ANPO AKIHITO , HARA SHIGEHIRO , HIGURE HITOSHI , IIJIMA TOMOHIRO , HANDA SUKEHITO
IPC分类号： H01L21/027 , G03F1/84
摘要： PROBLEM TO BE SOLVED: To provide a simpler method for verifying writing data. SOLUTION: The method for verifying the writing data 12 for the layout data 10 by comparing the layout data 10 including information about a region where a figure is arranged with the writing data 12 comprises a step (S102) for inputting the writing data 12 and the layout data 10, a step (S112) for comparing the area of a figure in a predetermined region of both the data, a step (S116) for comparing the centroidal position of a figure in a predetermined region of both the data, and a step (S124) for outputting the result of the area comparison step and the result of the centroidal position comparison step. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供用于验证写入数据的更简单的方法。解决方案：通过将包括关于图形的区域的信息的布局数据10与写入数据12进行比较来验证布局数据10的写入数据12的方法包括用于输入写入数据的步骤（S102） 12和布局数据10，用于比较两个数据的预定区域中的图形的区域的步骤（S112），用于比较两个数据的预定区域中的图形的重心位置的步骤（S116）以及用于输出区域比较步骤的结果和重心位置比较步骤的结果的步骤（S124）。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2007200968A Pattern area computing method, proximity effect compensating method, and charged particle beam drawing method 有权
标题翻译：图案区域计算方法，近似效应补偿方法和充电粒子束图
公开(公告)号：JP2007200968A
公开(公告)日：2007-08-09
申请号：JP2006014881
申请日：2006-01-24
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： IIJIMA TOMOHIRO , ISE SEISHI
IPC分类号： H01L21/027
CPC分类号： H01J37/3026 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： PROBLEM TO BE SOLVED: To reduce an error in backward scattering energy distribution.
SOLUTION: The pattern area computing method is capable of computing each area defined at the center position of each area mesh for compensating proximity effect of drawing with electron beam by virtually dividing a drawing pattern into the area meshes. This pattern area computing method comprises a virtually dividing step (S104) for virtually dividing the drawing pattern into a figure diving meshes in the identical size deviated by 1/2 mesh from the area mesh, and an area distributing step (S116) for distributing an area of pattern within each figure dividing mesh to a plurality of vertexes of each figure dividing mesh while the gravity position is maintained. An error may be lowered in the backward scattering energy distribution.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：减少向后散射能量分布的误差。解决方案：图案区域计算方法能够计算每个区域网格的中心位置定义的每个区域，以通过将绘图图案实际上划分为区域网格来补偿电子束绘制的邻近效应。这种图案区域计算方法包括：虚拟划分步骤（S104），用于将绘图图形虚拟地划分成与区域网格相距1/2英寸的相同大小的图形跳水网格;以及区域分配步骤（S116），用于分配每个图形中的图案区域在保持重力位置时将网格划分成每个图形分割网格的多个顶点。在向后散射能量分布中可能会降低误差。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2007142100A Charged particle beam lithography apparatus 有权
标题翻译：充电颗粒光束光刻设备
公开(公告)号：JP2007142100A
公开(公告)日：2007-06-07
申请号：JP2005332998
申请日：2005-11-17
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： HATTORI SEIJI , OTOSHI KENJI , IIJIMA TOMOHIRO , ONIMARU YOSHIAKI , KIMURA HAYATO
IPC分类号： H01L21/027 , H01J37/147 , H01J37/305
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/31793
摘要： PROBLEM TO BE SOLVED: To correct a sub-deflection non-point in main/sub two-stage deflections at a high speed, and to improve the accuracy of a drawing.
SOLUTION: An electron-beam lithography apparatus has main/sub two-stage deflection systems, divides a main-deflection drawing region on a sample into sub-fields determined by the deflection width of a sub-deflection system, selects the sub-field by a main deflection system, and draws a shot by the sub-deflection system in the selected sub-field. In the electron-beam lithography apparatus, a sub-deflection driving section for driving the sub-deflection system has a sub-deflection sensibility correction circuit 42 correcting a deflection sensibility in response to the place of the shot in the sub-field, and a sub-deflection non-point correction circuit 43 correcting a deflection non-point in response to the place of the shot in the sub-field. In the electronic-beam lithography apparatus, the sub-deflection driving section further has an adder 44 adding an output from the sub-deflection sensibility correction circuit 42 and the output from the sub-deflection non-point correction circuit 43, and a deflection amplifier overlapping the output from the adder 44 to the sub-deflection system.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：以高速度校正主/副两级偏转中的副偏转非点，并提高绘图精度。解决方案：电子束光刻设备具有主/次两级偏转系统，将样品上的主偏转绘图区域划分成由子偏转系统的偏转宽度确定的子场，选择子并通过主偏转系统进行射击，并且通过所选择的子场中的子偏转系统进行射击。在电子束光刻装置中，用于驱动副偏转系统的副偏转驱动部具有副偏转灵敏度校正电路42，该副偏转敏感度校正电路42响应于子场中的拍摄位置校正偏转灵敏度，并且子偏转非点校正电路43响应于子场中的镜头的位置校正偏转非点。在电子束光刻装置中，副偏转驱动部还具有将副偏转灵敏度校正电路42的输出与副偏转非点校正电路43的输出相加的加法器44，以及偏转放大器将加法器44的输出与副偏转系统重叠。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2005311195A Electronic device 有权
标题翻译：电子设备
公开(公告)号：JP2005311195A
公开(公告)日：2005-11-04
申请号：JP2004128693
申请日：2004-04-23
申请人： Nuflare Technology Inc , Toshiba Social Automation Systems Co Ltd , 東芝ソシオシステムズ株式会社 , 株式会社ニューフレアテクノロジー
发明人： HIGURE HITOSHI , IIJIMA TOMOHIRO , OKI SUSUMU , TSUKAHARA NAOSHI , KUDO MAMORU , FUJIWARA OSAMU , HORI NAOKI
IPC分类号： H05K7/20
摘要： PROBLEM TO BE SOLVED: To provide an electronic device capable of providing adequate protection corresponding to an abnormal state by detecting abnormality occurring and not only performing processing for turning off a power source immediately, but also giving redundancy such that an operation does not end before its break through operation end processing according to the degree of the abnormality.
SOLUTION: The electronic device is disclosed in such a structure that a plurality of circuit boards 12 are arranged in a housing 11 successively to obtain a specified function, and cooled with air by a plurality of fan units 14F. In the device, an abnormal state in the housing 11 is detected by an abnormality detecting means 17 and a control means 18 performs not only abnormality processing for momentarily ceasing power supply to the circuit boards 12, but also the operation end processing for ending operations of the circuit boards 12 before the power supply is ceased according to the degree of the detected abnormality.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够通过检测异常发生而提供对应于异常状态的足够保护的电子设备，而不仅仅是执行立即关闭电源的处理，而且还提供冗余，使得操作不在根据异常程度突破运行结束处理之前结束。解决方案：电子设备被公开为使得多个电路板12连续地布置在壳体11中以获得指定的功能，并且由多个风扇单元14F用空气冷却。在该装置中，壳体11中的异常状态由异常检测装置17检测，并且控制装置18不仅执行暂时停止对电路板12的供电的异常处理，而且执行用于结束操作的操作结束处理电源之前的电路板12根据检测到的异常程度而停止。版权所有（C）2006，JPO＆NCIPI

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