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1. 发明专利

JP2004328004A Plasma processing apparatus 审中-公开
公开(公告)号：JP2004328004A
公开(公告)日：2004-11-18
申请号：JP2004162426
申请日：2004-05-31
申请人： Nagoya Industrial Science Research Inst , Toshiba Corp , 株式会社東芝 , 財団法人名古屋産業科学研究所
发明人： YAMAUCHI TAKEMOTO , SUGAI HIDEO
IPC分类号： H05H1/46 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus, which generates a stable plasma in a chamber even if the power of input microwaves reaches a broad range and improves the stability of a plasma processing, such as ashing or etching. SOLUTION: The plasma processing apparatus comprises a top board 11, on which slits 11a are formed on the part that is opposite to a waveguide 10 on a vacuum chamber for guiding microwaves into the vacuum chamber, where the microwaves passing through the slits 11a spread along the vacuum chamber side inner surface, and a plate-like dielectric 40, which is formed on the vacuum chamber side against the top board 11 and allowing the microwaves to pass through the dielectric. Projecting stripes 41 are formed on the vacuum chamber side surface of the dielectric 40. COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2004193148A Plasma processor 审中-公开
公开(公告)号：JP2004193148A
公开(公告)日：2004-07-08
申请号：JP2002355449
申请日：2002-12-06
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAUCHI TAKEMOTO , SUZUKI HIROYUKI
IPC分类号： C23C16/507 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To enable a member facing on a gap between a plurality of windows composing dielectric windows to be less chipped so as to prevent an abnormal discharge from occurring.
SOLUTION: A plasma processor is equipped with a high-frequency wave feed mechanism which is provided with a gas feed pipe 4 feeding reaction gas into a vacuum charger 1 and a high-frequency wave power supply unit 16, feeds high-frequency waves from the high-frequency power supply unit 16 into the vacuum charger 1 through the dielectric window 10 to turn reaction gas into plasma at a position separating from the dielectric window 10 by a prescribed space, and processes a wafer W in this plasma generating region 19. The dielectric window 10 is composed of a plurality of windows 10a that are two-dimensionally arranged, a gap 18 is provided between the plurality of windows 10a, the width of the gap 18 between the plurality of windows 10a is set twice or below as large as the thickness of a region between the dielectric window 10 and the plasma generating region 19.
COPYRIGHT: (C)2004,JPO&NCIPI

3. 发明专利

JP2008060238A Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2008060238A
公开(公告)日：2008-03-13
申请号：JP2006233771
申请日：2006-08-30
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUMIZU HIROYUKI , YAMAUCHI TAKEMOTO
IPC分类号： H01L21/768 , H01L21/28
CPC分类号： H01L21/76802 , H01L21/02063 , H01L21/31138 , H01L21/76805 , H01L21/76814
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of reliably removing halide remained on the surface of a contact hole base, suppressing the rise of interfacial resistance, stabilizing contact resistance, and raising wiring reliability.
SOLUTION: The method includes: a process for forming an interlayer insulating film 3 on a silicon substrate 1; a process for dry-etching the interlayer insulating film by etching gas containing halogen through the use of an organic mask R, and forming a contact hole h in the prescribed part of the interlayer insulating film; a process for peeling and removing an organic mask material; a process for performing ashing by oxygen plasma after coating a resist 8 containing OH or H on the interlayer insulating film including the contact hole; and a process for embedding a conductive material in the contact hole.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种能够可靠地除去残留在接触孔基体的表面上的卤素的半导体器件的制造方法，抑制界面电阻的上升，稳定接触电阻和提高接线可靠性。解决方案：该方法包括：在硅衬底1上形成层间绝缘膜3的工艺; 通过使用有机掩模R蚀刻含有卤素的气体并在层间绝缘膜的规定部分形成接触孔h来干蚀刻层间绝缘膜的工艺; 用于剥离和去除有机掩模材料的方法; 在包含接触孔的层间绝缘膜上涂布含有OH或H的抗蚀剂8之后，通过氧等离子体进行灰化的工序; 以及用于在导电孔中嵌入导电材料的工艺。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007165731A Method of manufacturing insulation film, method of manufacturing thin film transistor and method of manufacturing liquid crystal display device 审中-公开
标题翻译：制造绝缘膜的方法，制造薄膜晶体管的方法和制造液晶显示装置的方法
公开(公告)号：JP2007165731A
公开(公告)日：2007-06-28
申请号：JP2005362428
申请日：2005-12-15
申请人： Toshiba Corp , 株式会社東芝
发明人： NIIMURA TADASHI , UNOSAWA KEISUKE , YAMAUCHI TAKEMOTO
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/20 , H01L21/316 , H01L21/336
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an insulation film with which an insulation film improved in insulation resistance and having an excellent film quality is formed on a surface of a crystallized semiconductor thin film at a low temperature and in a short time, to provide a method of manufacturing a thin film transistor, and to provide a method of manufacturing a liquid crystal display device. SOLUTION: The method of manufacturing an insulation film (gate insulation film 3) and a thin film transistor 10 includes the steps of forming a semiconductor thin film 2 on a substrate 1, crystallizing the semiconductor thin film 2, forming a crystallized semiconductor thin film 20, performing anisotropic oxidization on a surface of the crystallized semiconductor thin film 20, forming an anisotropic oxide film 31 on the surface of the crystallized semiconductor thin film 20, and forming an insulation film 32 on a surface of the anisotropic oxide film 31. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种制造绝缘膜的方法，其中在低温下在结晶的半导体薄膜的表面上形成绝缘电阻提高并且具有优异的膜质量的绝缘膜，短时间，提供制造薄膜晶体管的方法，并提供制造液晶显示装置的方法。解决方案：制造绝缘膜（栅极绝缘膜3）和薄膜晶体管10的方法包括以下步骤：在衬底1上形成半导体薄膜2，使半导体薄膜2结晶，形成结晶半导体在结晶化半导体薄膜20的表面上进行各向异性氧化，在结晶化半导体薄膜20的表面形成各向异性氧化膜31，在各向异性氧化膜31的表面形成绝缘膜32 。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2006286663A Plasma treatment apparatus and method of manufacturing electronic device 审中-公开
标题翻译：等离子体处理装置及制造电子装置的方法
公开(公告)号：JP2006286663A
公开(公告)日：2006-10-19
申请号：JP2005100327
申请日：2005-03-31
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAUCHI TAKEMOTO
IPC分类号： H01L21/304 , H01L21/3065 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of satisfactorily eliminating an oxide or a nitride remaining on a substrate to be treated, and suppressing contamination caused by impurities from an insulating window.
SOLUTION: The apparatus is provided with a vacuum chamber housing the substrate to be treated, and having the insulating window transmitting an electromagnetic wave; a gas supply pipe for supplying gas containing hydrogen to the vacuum chamber; and an electromagnetic wave introducing means for introducing an electromagnetic wave through the insulating window to generate plasma in the chamber. In the insulating window, an electric conductive material film is formed on the inside surface of the vacuum chamber side.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种等离子体处理装置，其能够令人满意地消除待处理的基板上残留的氧化物或氮化物，并且抑制由绝缘窗口产生的杂质污染。解决方案：该装置设置有容纳待处理基板的真空室，并且具有传递电磁波的绝缘窗; 用于向所述真空室供给含有氢气的气体供给管; 以及用于通过绝缘窗口引入电磁波以在腔室中产生等离子体的电磁波引入装置。在绝缘窗中，在真空室侧的内表面上形成导电材料膜。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2014163739A Sensor chip 审中-公开
标题翻译：传感器芯片
公开(公告)号：JP2014163739A
公开(公告)日：2014-09-08
申请号：JP2013033198
申请日：2013-02-22
申请人： Toshiba Corp , 株式会社東芝
发明人： WADA TAKAKI , YAMAUCHI TAKEMOTO , TONO ICHIRO , KASAI SHINGO , ISHIDA CHIO
IPC分类号： G01N21/27
摘要： PROBLEM TO BE SOLVED: To provide a sensor chip capable of improving detection sensitivity.SOLUTION: The sensor chip includes: an optical waveguide part; a sensing area provided on the optical waveguide part; a pair of optical element parts provided on the optical waveguide part to sandwich the sensing area between them; a junction part provided on the side where the optical element parts are provided on the optical waveguide part, having first pores where the optical element parts are exposed; and a chamber part provided on the junction part. Gas exists in the first pores.
摘要翻译：要解决的问题：提供能够提高检测灵敏度的传感器芯片。解决方案：传感器芯片包括：光波导部分; 设置在光波导部分上的感测区域; 设置在所述光波导部分上以将感测区域夹在其间的一对光学元件部分; 在所述光波导部分上设置有所述光学元件部分的一侧的接合部分，具有所述光学元件部分露出的第一孔; 以及设置在接合部上的室部。气体存在于第一孔中。

7. 发明专利

JP2012173066A Optical waveguide type biochemical sensor chip and manufacturing method for the same 审中-公开
标题翻译：光波导型生物传感器芯片及其制造方法
公开(公告)号：JP2012173066A
公开(公告)日：2012-09-10
申请号：JP2011033896
申请日：2011-02-18
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAUCHI TAKEMOTO , MATSUO MIE , FUJII MIKA
IPC分类号： G01N21/27 , G01N21/78
摘要： PROBLEM TO BE SOLVED: To provide an optical waveguide type biochemical sensor chip that can restrain an increase in the number of steps of the manufacturing process.SOLUTION: An optical waveguide type biochemical sensor chip comprises a substrate; a pair of gratings disposed over the substrate; an optical waveguide layer disposed over the substrate and formed of a material higher in refractive index than the substrate and hardened by irradiation with UV; a sensing film that is formed by dripping solution over the optical waveguide layer and manifests coloring reaction when a specimen is worked on; and a frame that defines a formation area for the sensing film over the optical waveguide layer, is greater in height than the liquid level of the solution when the sensing film is to be formed and is pasted onto the substrate by the hardening of the optical waveguide layer.
摘要翻译：要解决的问题：提供可以抑制制造过程的步骤数量增加的光波导型生化传感器芯片。光波导型生化传感器芯片包括基板; 设置在所述基板上的一对光栅; 光波导层，设置在所述基板上并且由比所述基板更高的折射率的材料形成，并且通过用UV照射而硬化; 通过在光波导层上滴加溶液而形成的感测膜，并且当加样时显示着色反应; 并且限定了光波导层上的感测膜的形成区域的框架，当要形成感测膜并且通过光波导的硬化将其粘贴到基板上时，高于溶液的液面高度层。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2005353364A Plasma generator, plasma treatment device and plasma treatment method 审中-公开
标题翻译：等离子体发生器，等离子体处理装置和等离子体处理方法
公开(公告)号：JP2005353364A
公开(公告)日：2005-12-22
申请号：JP2004171208
申请日：2004-06-09
申请人： Shibaura Mechatronics Corp , Toshiba Corp , 株式会社東芝 , 芝浦メカトロニクス株式会社
发明人： IVAN PETROV GANASHEV , YAMAUCHI TAKEMOTO
IPC分类号： H05H1/46 , C23C16/511 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma generator capable of always providing high plasma generation efficiency without depending on the electron density of plasma, and to provide a plasma treatment device and a plasma treatment method. SOLUTION: This plasma generator is provided with a plasma generation vessel 10 having a space for generating plasma P and a waveguide body 54 constituting at least a part of the wall surface of the plasma generation vessel 10 for introducing microwaves M from the outside of the plasma generation vessel 10 to the inside thereof; and is so structured as to be able to generate plasma P in the plasma generation vessel 10 by the microwaves M introduced through the waveguide body 54. The waveguide body 54 is characterized by having, between the plasma P and itself, a transition region 54T where its effective dielectric constant is generally continuously lowered toward the plasma P. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供能够始终提供高等离子体产生效率而不依赖于等离子体的电子密度的等离子体发生器，并提供等离子体处理装置和等离子体处理方法。解决方案：该等离子体发生器设置有具有产生等离子体P的空间的等离子体发生容器10和构成等离子体发生容器10的壁面的至少一部分的波导体54，用于从外部引入微波M 的等离子体发生容器10的内部; 并且被构造成能够通过通过波导体54引入的微波M在等离子体产生容器10中产生等离子体P.波导体54的特征在于在等离子体P和本身之间具有过渡区域54T，其中其有效介电常数通常朝向等离子体P持续降低。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2005005292A System and process for fabricating electronic device 审中-公开
标题翻译：制造电子设备的系统和过程
公开(公告)号：JP2005005292A
公开(公告)日：2005-01-06
申请号：JP2003163657
申请日：2003-06-09
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAUCHI TAKEMOTO , KONDO HIROYASU
IPC分类号： H01L21/3065 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which fluorides being produced when oxides on the metal surface are removed after forming a contact hole can be removed and production of TiOH can be prevented, and to provide a process for fabricating a semiconductor device.
SOLUTION: The system for fabricating an electronic device comprises a processing chamber employing a fluorine based gas for removing an insulating film between interconnect line layers and oxides on the contact surface of a semiconductor, a conveyor for conveying the semiconductor in order to remove fluorine remaining on the contact surface after the insulating film is removed, equipment for heat treating the semiconductor, and a system performing hydrogen based plasma processing of the semiconductor.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体器件，其中可以除去在形成接触孔之后去除金属表面上的氧化物时产生的氟化物，并且可以防止制造TiOH，并且提供一种制造半导体器件。解决方案：用于制造电子器件的系统包括：采用氟基气体的处理室，用于除去半导体的接触表面上的互连线层和氧化物之间的绝缘膜;输送半导体的输送器，以便去除除去绝缘膜后残留在接触表面上的氟，以及对半导体进行氢等离子体处理的系统。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2004335523A Method for etching and rie system 审中-公开
公开(公告)号：JP2004335523A
公开(公告)日：2004-11-25
申请号：JP2003125059
申请日：2003-04-30
申请人： Toshiba Corp , 株式会社東芝
发明人： OKAMOTO TOSHIAKI , YAMAUCHI TAKEMOTO
IPC分类号： H05H1/46 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method for etching that is improved in selectivity and productivity, and to provide an RIE system. SOLUTION: The method for etching includes a step of placing a substrate 2 to be treated in a chamber 1, a step of introducing a gas containing a fluorocarbon gas into the chamber 1, and a sep of generating plasma 9 in the chamber 1 by simultaneously or alternately impressing a first high frequency and a second high frequency higher than the first high frequency. The method also includes a step of etching the substrate 2 with the plasma 9. The C/F ratio of the fluorocarbon gas is adjusted to ≥0.65. COPYRIGHT: (C)2005,JPO&NCIPI

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