专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008244144A Manufacturing method of semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：JP2008244144A
公开(公告)日：2008-10-09
申请号：JP2007082551
申请日：2007-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： AOKI KATSUAKI , KATSUMATA YUTAKA , UNOSAWA KEISUKE
IPC分类号： H01L21/3065
CPC分类号： H01L21/76816 , H01L21/31116
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, capable of forming a hole or a groove having a desired shape in an etching process.
SOLUTION: The manufacturing method of a semiconductor device enables to form a first hole and a second hole having an aspect ratio lower than that of the first hole on an insulating film formed on a semiconductor substrate. The manufacturing method includes executing a first etching processing for etching the insulating film and a second etching processing for etching the insulating film under a condition where the speed of depositing a deposited layer to be formed on the surface of the insulating film is lower than the speed of the first etching processing.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够在蚀刻工艺中形成具有期望形状的孔或凹槽的半导体器件的制造方法。解决方案：半导体器件的制造方法能够形成在半导体衬底上形成的绝缘膜上具有比第一孔低的纵横比的第一孔和第二孔。该制造方法包括执行用于蚀刻绝缘膜的第一蚀刻处理和用于在绝缘膜的表面上沉积形成的沉积层的速度低于速度的条件下蚀刻绝缘膜的第二蚀刻处理的第一次蚀刻处理。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2013140942A Semiconductor light-emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2013140942A
公开(公告)日：2013-07-18
申请号：JP2012218783
申请日：2012-09-28
申请人： Toshiba Corp , 株式会社東芝
发明人： UNOSAWA KEISUKE
IPC分类号： H01L33/38 , H01L33/50
CPC分类号： H01L33/38 , H01L33/382 , H01L33/504 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device with further high luminance.SOLUTION: The semiconductor light-emitting device includes: a semiconductor layer including a first primary surface, a second primary surface formed opposite to the first primary surface, and a light-emitting layer; a p-side electrode provided on the second primary surface and formed in a region having the light-emitting layer; an n-side electrode provided on the second primary surface and surrounded by the p-side electrode; an insulating layer provided on side surfaces of the semiconductor layer and provided on the second primary surface of the semiconductor layer so as to surround the p-side electrode and the n-side electrode; a p-side metal pillar provided so as to be electrically connected onto the p-side electrode; an n-side metal pillar provided so as to be electrically connected onto the n-side electrode; and a resin layer surrounding end portions of the p-side metal pillar and the n-side metal pillar, and provided so as to cover the side surfaces of the semiconductor layer, the second primary surface, the p-side electrode, the n-side electrode, the insulating layer, the p-side metal pillar, and the n-side metal pillar.
摘要翻译：要解决的问题：提供具有更高亮度的半导体发光器件。解决方案：半导体发光器件包括：半导体层，包括第一主表面，与第一主表面相对形成的第二主表面，以及发光层; p侧电极，设置在所述第二主面上并形成在具有所述发光层的区域中; n侧电极，设置在第二主面上并被p侧电极包围; 绝缘层，设置在半导体层的侧表面上并设置在半导体层的第二主表面上，以围绕p侧电极和n侧电极; 设置为电连接到p侧电极上的p侧金属柱; n侧金属柱，其被设置为电连接到n侧电极; 以及围绕p侧金属柱和n侧金属柱的端部的树脂层，并且设置成覆盖半导体层，第二主面，p侧电极，n侧金属柱的侧面。绝缘层，p侧金属柱和n侧金属柱。

3. 发明专利

JP2014187405A Semiconductor light-emitting device and method of manufacturing the same 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2014187405A
公开(公告)日：2014-10-02
申请号：JP2014140951
申请日：2014-07-08
申请人： Toshiba Corp , 株式会社東芝
发明人： UNOSAWA KEISUKE
IPC分类号： H01L33/62
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device with higher luminance and to provide a method of manufacturing the same.SOLUTION: A semiconductor light-emitting device includes: a semiconductor layer including a first primary surface, a second primary surface formed on the opposite side of the first primary surface, and a light-emitting layer; and a p-side electrode and an n-side electrode provided on the second primary surface. The n-side electrode has a first portion that is a region electrically connected to an n-side wiring layer, and a second portion continuously provided to the first portion and electrically connected to the n-side wiring layer via the first portion. The second portion has a shape having a longitudinal direction and a lateral direction, and is formed so that the average length on the second portion in the lateral direction is more than or equal to 30% of the length of one side or the diameter of the first portion.
摘要翻译：要解决的问题：提供一种具有更高亮度的半导体发光器件，并提供其制造方法。一种半导体发光器件，包括：半导体层，包括第一主表面，第二主表面形成在第一主表面的相对侧上，和发光层; 以及设置在第二主表面上的p侧电极和n侧电极。 n侧电极具有与n侧布线层电连接的区域的第一部分，以及连续地设置在第一部分并经由第一部分与n侧布线层电连接的第二部分。第二部分具有纵向和横向的形状，并且形成为使得第二部分在横向方向上的平均长度大于或等于一侧的长度的30％或直径的30％第一部分。

4. 发明专利

JP2007165731A Method of manufacturing insulation film, method of manufacturing thin film transistor and method of manufacturing liquid crystal display device 审中-公开
标题翻译：制造绝缘膜的方法，制造薄膜晶体管的方法和制造液晶显示装置的方法
公开(公告)号：JP2007165731A
公开(公告)日：2007-06-28
申请号：JP2005362428
申请日：2005-12-15
申请人： Toshiba Corp , 株式会社東芝
发明人： NIIMURA TADASHI , UNOSAWA KEISUKE , YAMAUCHI TAKEMOTO
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/20 , H01L21/316 , H01L21/336
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an insulation film with which an insulation film improved in insulation resistance and having an excellent film quality is formed on a surface of a crystallized semiconductor thin film at a low temperature and in a short time, to provide a method of manufacturing a thin film transistor, and to provide a method of manufacturing a liquid crystal display device. SOLUTION: The method of manufacturing an insulation film (gate insulation film 3) and a thin film transistor 10 includes the steps of forming a semiconductor thin film 2 on a substrate 1, crystallizing the semiconductor thin film 2, forming a crystallized semiconductor thin film 20, performing anisotropic oxidization on a surface of the crystallized semiconductor thin film 20, forming an anisotropic oxide film 31 on the surface of the crystallized semiconductor thin film 20, and forming an insulation film 32 on a surface of the anisotropic oxide film 31. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种制造绝缘膜的方法，其中在低温下在结晶的半导体薄膜的表面上形成绝缘电阻提高并且具有优异的膜质量的绝缘膜，短时间，提供制造薄膜晶体管的方法，并提供制造液晶显示装置的方法。解决方案：制造绝缘膜（栅极绝缘膜3）和薄膜晶体管10的方法包括以下步骤：在衬底1上形成半导体薄膜2，使半导体薄膜2结晶，形成结晶半导体在结晶化半导体薄膜20的表面上进行各向异性氧化，在结晶化半导体薄膜20的表面形成各向异性氧化膜31，在各向异性氧化膜31的表面形成绝缘膜32 。版权所有（C）2007，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式