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1. 发明专利

JP2004328004A Plasma processing apparatus 审中-公开
公开(公告)号：JP2004328004A
公开(公告)日：2004-11-18
申请号：JP2004162426
申请日：2004-05-31
申请人： Nagoya Industrial Science Research Inst , Toshiba Corp , 株式会社東芝 , 財団法人名古屋産業科学研究所
发明人： YAMAUCHI TAKEMOTO , SUGAI HIDEO
IPC分类号： H05H1/46 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus, which generates a stable plasma in a chamber even if the power of input microwaves reaches a broad range and improves the stability of a plasma processing, such as ashing or etching. SOLUTION: The plasma processing apparatus comprises a top board 11, on which slits 11a are formed on the part that is opposite to a waveguide 10 on a vacuum chamber for guiding microwaves into the vacuum chamber, where the microwaves passing through the slits 11a spread along the vacuum chamber side inner surface, and a plate-like dielectric 40, which is formed on the vacuum chamber side against the top board 11 and allowing the microwaves to pass through the dielectric. Projecting stripes 41 are formed on the vacuum chamber side surface of the dielectric 40. COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2003142457A PLASMA TREATMENT APPARATUS 审中-公开
公开(公告)号：JP2003142457A
公开(公告)日：2003-05-16
申请号：JP2001335529
申请日：2001-10-31
申请人： TOSHIBA CORP , INST NAGOYA IND SCIENCE RES
发明人： YAMAUCHI TAKEMOTO , SUGAI HIDEO
IPC分类号： H05H1/46 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus that can generate stable plasma in a chamber even if inputted microwave power widely ranges, and hence can improve stability in plasma treatment such as ashing and etching. SOLUTION: The plasma treatment apparatus comprises a top board 11 that has a slit 11a formed at a portion opposite to a waveguide 10 of a vacuum chamber 20 for introducing a microwave inside the vacuum chamber 20 and propagates the microwave that has passed through the slit 11a to the side surface of the vacuum chamber 20 along an internal surface, and a plate-like dielectric 40 provided at the side of the vacuum chamber 20 on the top board 11 and at the same time allows the microwave to permeate. On the side surface of the vacuum chamber 20 of a dielectric 30, a projection 41 is formed.

3. 发明专利

JP2000277293A PLASMA PROCESSING DEVICE 失效
公开(公告)号：JP2000277293A
公开(公告)日：2000-10-06
申请号：JP8130599
申请日：1999-03-25
申请人： UNIV NAGOYA , TOSHIBA CORP
发明人： NAKAMURA KEIJI , SUGAI HIDEO , FURUYA MASAAKI , SUZUKI HIROYUKI , TONOYA JUNICHI
IPC分类号： H01L21/302 , C23C16/50 , C23F4/00 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To ensure good plasma cleaning in a vacuum container by applying ac voltages of different phases to each of walls of a conductive plasma processing container structured with a plurality of the walls, of which surfaces are made to electrically float from a ground. SOLUTION: Walls 2, 3 of a processing container 4, exposed to plasma 6 during plasma processing and voltage applying means 5, are insulated from ground potential including a vacuum container 1 by an insulating material, and the walls 2, 3 are electrically floated. When an ac voltage applied to the walls 2, 3 is a high-frequency voltage, a self-bias voltage is generated on the walls 2, 3, ion energy colliding with the walls 2, 3 becomes high, and a film deposited on the walls 2, 3 is eliminated and cleaned. At this time, the ac voltages applied to the walls 2, 3 by the voltage applying means 5 have different phases. Thus, potentials VA, VB of the walls A, B alternately repeats the states of VA>VB and VA

4. 发明专利

JPH08255697A HIGH FREQUENCY DISCHARGE METHOD, DISCHARGE DEVICE THEREFOR, AND HIGH FREQUENCY DISCHARGE TREATMENT DEVICE USING THIS DISCHARGE DEVICE 失效
公开(公告)号：JPH08255697A
公开(公告)日：1996-10-01
申请号：JP6119295
申请日：1995-03-20
申请人： TOSHIBA CORP
发明人： SUGAI HIDEO , KANO MASAAKI
IPC分类号： H05H1/46 , C23C16/50 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To eliminate the loss of electrons resulted from the electrostatic coupling of an antenna with a plasma even when the surface of an antenna conductor is not covered with a dielectric. and prevent the abnormal rise of the plasma potential by covering the circumference of the looped antenna conductor with a magnetic force line. CONSTITUTION: When a high frequency power source 13 is operated to apply a high frequency power to an antenna 11, the process gas supplied into a vessel is excited and laid in plasma state. In this state, a workpiece is subjected to a plasma working such as etching or CVD. When a DC power source 14 is operated at this time to apply a DC power to the antenna 11, the circumference of the antenna 11 can be covered with a magnetic force line. Thus, the electrons in the plasma are insulated from the surface of the antenna 11 by the magnetic force line, and the potential of the plasma can be prevented from being abnormally raised by the electrostatic coupling of the antenna 11 with the ions, and the spattering by the ions can be also prevented.

5. 发明专利

JPH0778698A METHOD AND DEVICE FOR INDUCTION COUPLING HIGH FREQUENCY DISCHARGE 失效
公开(公告)号：JPH0778698A
公开(公告)日：1995-03-20
申请号：JP22610793
申请日：1993-09-10
申请人： TOSHIBA CORP
发明人： SUGAI HIDEO , ICHIHARA KATSUTARO , YASUDA NOBURO , OKUBO MICHIKO
IPC分类号： B01J19/08 , H01J37/32 , H05H1/46
摘要： PURPOSE:To establish a method and provide a device for induction coupling type high frequency discharging, with which generation of impurities due to an electrostatic field can be suppressed easily. CONSTITUTION:A discharge plasma is produced by feeding high frequency current to a loop-form conductor 12 for generating a varying magnetic field, and therefore, the loop-form conductor 12 is enclosed with a conductor on the ground side to become a passage for the feedback current so that openings 14, 17 are provided partially, and thereby the loop-form conductor is shielded electrostatically. The high frequency discharge device concerned of induction coupling type included a discharge vessel where the crude gas supply system and exhaust system are connected and the mentioned loop-form conductor 12 which is connected with a high frequency source and produces a discharge plasma of induction coupling type within the said discharge vessel. This 12 is covered with the ground side conductor as passage for the feedback current. i.e., a return line 13, and shield plates 15, 16 in such a manner that the openings 14, 17 are provided partially, which was described above.

6. 发明专利

JPH11233289A HIGH FREQUENCY DISCHARGE DEVICE AND HIGH FREQUENCY PROCESSING DEVICE 失效
公开(公告)号：JPH11233289A
公开(公告)日：1999-08-27
申请号：JP3491598
申请日：1998-02-17
申请人： UNIV NAGOYA , TOSHIBA CORP
发明人： SUGAI HIDEO , SUZUKI HIROYUKI , TONOTANI JIYUNICHI
IPC分类号： H05H1/24 , C23C16/50 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To realize both of the stabilization of plasma discharge and the suppression of sputtering by an antenna and to provide an optimum capacitive coupling between the antenna and the plasma by providing capacitors intervened between the grounding side of an antenna or a plurality of antennas. SOLUTION: A vacuum vessel 1 is provided with an antenna 8 composed of looped conductive material. There are an antenna 8 formed by applying an insulating coating of an insulating material around the outer circumference of the antenna conductor and an antenna 8 having an antenna conductor in pure metal without any insulating coating. A high frequency power supply 9 is connected to one end of the antenna 8 and a floating capacitor 10 is connected across the grounding in the other end side. Because the floating capacitor 10 is a variable capacity, the high frequency voltage distribution is changed on the antenna 8 by changing the capacity Cf so that the capcitive coupling between the antenna 8 and the plasma is controlled.

7. 发明专利

JPH1187098A PLASMA PROCESSOR 失效
公开(公告)号：JPH1187098A
公开(公告)日：1999-03-30
申请号：JP23840797
申请日：1997-09-03
申请人： TOSHIBA CORP
发明人： YAMAZAKI OSAMU , FUJIMOTO SHIGERU , SUGAI HIDEO , YAMAHANA MASASHI
IPC分类号： H05H1/46 , C23C16/44 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To prevent the adhesion of adhesive material to the inner wall surface of a processing container, and to prevent the return of the adhered active species to the plasma again by forming at least one part of a shielding means freely to be moved so as to secure a carry-in route or a delivery route at the time of carry-in or delivery of a material to be processed into/from a processing container. SOLUTION: A cover member 29 is moved upward by a vertical driving mechanism 30 so as to secure a carrying route for board 25 to a first pole plate 22, and thereafter, the board 25 is placed on a top surface of the pole plate 22 (b). After closing a gate valve 27 so as to seal inside of a processing container 21, the cover member 29 is engaged with a cylindrical member 28 by the vertical driving mechanism 30 so as to seal the inside thereof. The processing container 21 is vacuumed by sucking, and the processing gas is led into the container 21 so as to generate plasma. Since an active specie for performing the plasma processing to a surface of the board 25 is generated inside of a space sealed by the cylindrical member 28 and the cover member 29, a deposit material 32 is adhered to the inner wall of these members. As a result, adhesion of the deposit material to the inner wall surface 21a of the processing container 21 can be thereby prevented.

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