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1. 发明专利

JP2009274129A Roll gap measuring device 有权
标题翻译：辊隙测量装置
公开(公告)号：JP2009274129A
公开(公告)日：2009-11-26
申请号：JP2008130461
申请日：2008-05-19
申请人： Nippon Steel Corp , Power Mnc Co Ltd , 新日本製鐵株式会社 , 株式会社パワーエムエヌシー
发明人： MARUKI YASUO , SANJO SATORU , IWASAKI JUNYA , YANO TAKAYUKI , NISHIHARA TAKASHI , SHIRAGAMI TAKAYUKI , JEON JAE YOUNG , HERR JEE-HAING , PARK KYU-CHOL
IPC分类号： B22D11/16
CPC分类号： B22D11/08
摘要： PROBLEM TO BE SOLVED: To measure a roll gap with high accuracy for a long time by suppressing a phenomenon in which a foreign substance is stuck while ensuring the safety of a sensor head without changing the length of protrusion of the sensor head from a sensor housing. SOLUTION: A sensor head 11 is constituted of a body 11a and a head portion 11b conically continuing to the end of the body 11a and having a shape in which a top of the head portion is bent like convex for a roll 4 side, and an annular step portion 11e is provided between the lower end of the head portion 11b and the upper end of the body 11a. In the device, the sensor head 11 which has contacted the roll 4 is pressed downward, and when the lower end of the head portion 11b enters the sensor housing 12, a receiving portion A having an annular band-like bottom surface is formed, and a foreign substance x is received in the step difference 11e. When the sensor head 11 moves back to the original position, the foreign substance x is pushed out as it is by the step difference 11e, thereby preventing sticking of the foreign substance. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了在不改变传感器头的突出长度的同时确保传感器头的安全性，通过抑制异物粘附的现象来长时间地高精度地测量辊间隙传感器外壳。解决方案：传感器头11由主体11a和头部11b构成，头部11b圆锥形连续到主体11a的端部，并且具有头部的顶部弯曲成为辊4侧的凸起的形状并且在头部11b的下端和主体11a的上端之间设置有环状台阶部11e。在该装置中，已经接触到辊4的传感器头11被向下按压，并且当头部11b的下端进入传感器壳体12时，形成具有环形带状底表面的容纳部分A，并且在步差11e中接收到异物x。当传感器头11移回到初始位置时，异物x按步骤差11e被推出，从而防止异物粘附。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2000306541A WAFER TEMPERATURE DETECTING DEVICE FOR ION IMPLANTER 失效
公开(公告)号：JP2000306541A
公开(公告)日：2000-11-02
申请号：JP11000599
申请日：1999-04-16
申请人： NIPPON STEEL CORP , HITACHI LTD
发明人： TAKAYAMA SEIJI , YANO TAKAYUKI , SUZUKI SATOSHI , MERA KAZUO , TOMITA HIROYUKI
IPC分类号： H01J37/317 , G01K7/42 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide a wafer temperature detecting device capable of accurately detecting the temperature of a wafer placed in an ion implanter by in situ. SOLUTION: This wafer temperature detecting device is provided with a dummy material 1 placed on a rotary disk 10 to be mounted with wafers to be ion-implanted 20 in an ion implanter and made of an approximately same material as the wafers to be ion-implanted 20, and a thermocouple 2 provided on the back surface of the dummy material 1. The dummy material 1 has the same shape as the wafers to be ion-implanted 20 and placed on the rotary disk 10 so that the mirror-finished surface of the dummy wafer may be exposed to ion beams.

3. 发明专利

JP2000306540A BEAM CURRENT MEASURING DEVICE IN ION IMPLANTER 失效
公开(公告)号：JP2000306540A
公开(公告)日：2000-11-02
申请号：JP11000699
申请日：1999-04-16
申请人： NIPPON STEEL CORP , HITACHI LTD
发明人： TAKAYAMA SEIJI , YANO TAKAYUKI , SUZUKI SATOSHI , MERA KAZUO , TOMITA HIROYUKI
IPC分类号： H01J37/317 , C23C14/48 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To further accurately measure the beam current by improving the S/N ratio, in measurement of the beam current in an ion implanter. SOLUTION: In this beam current measuring device, one small hole 30 through which ion beams pass is provided on a rotary disk 10 to be mounted with wafers to be ion-implanted, the ion beams which have passed through the small hole 30 are detected by a Faraday cup 50, and the ion beam current is measured. In this case, the Faraday cup 50 has such the size as to cover the irradiation range of ion beams on a moving locus of the small hole 30, formed by the rotation of the rotary disc.

4. 发明专利

JPH088436A INTEGRATED CIRCUIT OF THIN FILM SOI/MOS TRANSISTOR 失效
公开(公告)号：JPH088436A
公开(公告)日：1996-01-12
申请号：JP13757194
申请日：1994-06-20
申请人： NIPPON STEEL CORP
发明人： MASUI SHOICHI , NAKAJIMA TATSUO , KAWAMURA KEISUKE , YANO TAKAYUKI , HAMAGUCHI ISAO , TAKAYAMA SEIJI , KAJIYAMA KENJI , TACHIMORI OJI
IPC分类号： H01L21/74 , H01L21/02 , H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To realize the cost reduction of a thin film SOI/MOS integrated circuit while obtaining stable operation. CONSTITUTION:A low dosage SIMOX wafer of 110 nm or less in thickness is used, and an accumulation type thin film $01/PMOS transistor is constituted. In order to normally operate the transistor, it is necessary that a channel is not formed on the back of SOI by making the absolute value of the flat band voltage of a back gate larger than the power supply voltage to be used. The upper limit value is 1X10 thetacm ], so that the power supply voltage is set lower than or equal to 5V in the accumulation type film SOI/PMOS transistor formed in a wafer having a buried oxide film of 110nm or less in thickess, and the stable operation of a circuit is obtained.

5. 发明专利

JPH07193204A MANUFACTURE OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH07193204A
公开(公告)日：1995-07-28
申请号：JP33244093
申请日：1993-12-27
申请人： NIPPON STEEL CORP
发明人： YANO TAKAYUKI , HAMAGUCHI ISAO , NAKAJIMA TATSUO , TACHIMORI OJI
IPC分类号： H01L21/76 , H01L21/02 , H01L21/265 , H01L21/304 , H01L27/12
摘要： PURPOSE:To decrease particles existing on an SIMOX wafer. CONSTITUTION:Prior to an ion implantation step, a protective film is formed on a silicon wafer, the material of an SIMOX wafer. Ions of O are implanted through this film 2 to form an ion implanted region 3 in the wafer, then the film 2 is dissolved to remove, together with this film, particles remaining on the wafer 1 which are difficult to remove by the usual washing method. In this film removing step, the once removed particles may deposit again on the surface of the wafer 1 and hence the particle removing washing follow.

6. 发明专利

JPH06338549A DETECTING METHOD FOR DEFECT OF INSULATING FILM BURIED IN SEMICONDUCTOR BOARD 失效
公开(公告)号：JPH06338549A
公开(公告)日：1994-12-06
申请号：JP12973893
申请日：1993-05-31
申请人： NIPPON STEEL CORP
发明人： HAMAGUCHI ISAO , YANO TAKAYUKI , FUJITA TETSUO , KAJIYAMA KENJI
IPC分类号： H01L21/66 , H01L21/76 , H01L21/762
摘要： PURPOSE:To accurately locate defects in a short time by a method wherein a semiconductor board is irradiated with an electron beam to generate carriers, and carriers are led out and checked in quantity change. CONSTITUTION:If no pipe defect 4 is present in a buried oxide film 2 irradiated with an electron beam 7, only carriers 8 generated inside a surface silicon layer 1 are able to reach a space-charge layer 6 by scattering. On the other hard, if a pipe defect 4 is located in a buried oxide film 2 irradiated with an electron beam 7, not only carriers 8 generated in the surface silicon layer 1 but also carriers generated even in a board 3 region are able to reach the space-charge layer 6 and led out as external signals. Therefore, a part of the oxide film 2 where carriers are relatively high in yield is detected as a spot, where a pipe defect 4 is located. The contrast signal of a scanning electron microscope is modulated with this carrier yield, whereby a pipe defect 4 can be easily defined as a microscopic image.

7. 发明专利

JP2006231350A Method and instrument for measuring interval of rolls for continuous caster 有权
标题翻译：用于测量连续铸造辊的间距的方法和仪器
公开(公告)号：JP2006231350A
公开(公告)日：2006-09-07
申请号：JP2005046895
申请日：2005-02-23
申请人： Nippon Steel Corp , 新日本製鐵株式会社
发明人： NISHIHARA TAKASHI , SHIRAGAMI TAKAYUKI , YANO TAKAYUKI
IPC分类号： B22D11/16
摘要： PROBLEM TO BE SOLVED: To provide a method and an instrument for measuring the interval of rolls for a continuous caster, wherein the abnormality of bearing for receiving the roll shaft can be detected at early time by measuring the interval of the rolls only at one time.
SOLUTION: The method for measuring the interval of the rolls for the continuous caster, is characterized in that in the method for measuring roll interval, that is for measuring the interval of the faced roll pair 2 by passing the roll interval measuring instrument 1 through in a cast slab passage of the continuous caster, at least at two positions in the width direction of the cast slab and two positions in the casting direction, the interval D of the roll pair, is measured, the interval D of roll pair is divided into a factor W having a fixed value independently of roll-rotation and a factor variable in a sinusoidal state depending on the roll-rotation, and the factor variable in the sinusoidal state is varied in phase at two positions in the width direction of the cast slab and also, this amplitude of vibration (a) is kept to have a fixed ratio at two positions in the width direction of the cast slab, and based on the measured result of the interval of the roll pair 2, the factor W having the fixed value is calculated.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于测量连续脚轮的辊间隔的方法和仪器，其中通过仅测量辊的间隔可以在早期检测用于接收辊轴的轴承的异常一次解决方案：连续铸造辊的间隔测量方法的特征在于，在辊间隔测量方法中，即通过辊间隔测量仪测量面对辊对2的间隔的方法在连续铸造机的铸坯通道中，至少在铸坯的宽度方向上的两个位置和铸造方向上的两个位置测量轧辊对的间隔D，轧辊对的间隔D 被分为具有与滚动旋转无关的固定值的因子W和根据滚动旋转的正弦状态的因子变量，并且正弦状态中的因子变量在宽度方向上的两个位置处相位变化铸造板坯，并且振幅（a）的振幅在铸坯的宽度方向上的两个位置处保持固定比例，并且基于辊对2的间隔的测量结果，因子计算具有固定值的W。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JPH1050629A METHOD AND APPARATUS FOR MANUFACTURE OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH1050629A
公开(公告)日：1998-02-20
申请号：JP16420896
申请日：1996-06-25
申请人： NIPPON STEEL CORP
发明人： IKARI ATSUSHI , YANO TAKAYUKI , TAKAYAMA SEIJI , SUZUKI SATOSHI , YOSHIDA OSAMU , KURUMADA KATSUHIKO
IPC分类号： H01L21/265 , H01L21/02 , H01L27/12
摘要： PROBLEM TO BE SOLVED: To effectively obtain an electric continuity, without contamination during ion implanting of oxygen to avoid causing damages by surely grounding a substrate and holder at the ion implantation for suppressing the discharge of the charges flowing in the substrate. SOLUTION: When oxygen ions are implanted in a semiconductor substrate, the electric discharge occurs from the substrate to a holder because of a high contact resistance of the substrate surface. To suppress such a discharge, the substrate and grounding continuity part are mechanically contacted to ensure an electric contact or the contact zone is a specified portion of the substrate or shaped a circular, thereby lowering the discharge potential and suppressing the damages due to the discharge.

9. 发明专利

JPH0963531A DEVICE FOR FIXING MEMBER TO BE ION-IMPLANTATED IN ION IMPLANTER 失效
公开(公告)号：JPH0963531A
公开(公告)日：1997-03-07
申请号：JP21486095
申请日：1995-08-23
申请人： NIPPON STEEL CORP
发明人： YOSHIDA OSAMU , YANO TAKAYUKI , KANETANI MASATOSHI
IPC分类号： H01J37/317 , H01L21/265 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a device for fixing a member to ion implant for use in an ion implanter, that prevents formation of dusts from clamp pins during ion implantation, is excellent in strength, and uses conductive clamp pins. SOLUTION: This device for fixing a member ion-implantant, for use in an ion implanter, has a mount 51 on which a member 11 for ion implantation, into which ions are implanted, is mounted, and has clamp pins 1, 2 projected from the ends of the mount 51 so as to grip the member 11 for ion implantation. In the device for fixing the member for ion implantation, each of the clamp pins 1, 2 is made from an SiC single crystal.

10. 发明专利

JPH08213440A METHOD OF MEASURING AMOUNT OF INJECTED OXYGEN INTO SI WAFER WITH INFRARED ABSORPTION 失效
公开(公告)号：JPH08213440A
公开(公告)日：1996-08-20
申请号：JP1817695
申请日：1995-02-06
申请人： NIPPON STEEL CORP
发明人： KAJIYAMA KENJI , FUJIOKA YUJI , YANO TAKAYUKI
IPC分类号： H01L21/66 , G01N21/35 , G01N21/3563 , H01L21/02 , H01L21/762 , H01L27/12
摘要： PURPOSE: To measure the amount of injected oxygen that defines a buried oxide film and distribution of it inside the surface of an wafer simply, accurately and nondestructively in an Si wafer with the burried oxide film formed by oxygen injection. CONSTITUTION: Infrared absorption method is used for measuring the amount of injected oxygen and the distribution of it inside the surface, the difference of the absorption spectrum between an oxygen injected Si wafer and an uninjected wafer is calculated, the difference of the differential spectrums at the maximum and the minimum volume is calculated, the amount of injection is obtained by multiplying the difference by a conversion coefficient of a reference sample previously determined simply, accurately and nondestructively. Therefore, the relation between the condition and amount of injection becomes clear and the condition of injection can be controlled so that the desired amount of injection and distribution of it is obtained.

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