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1. 发明专利

JP2015049137A 半導体チップ試験装置及び方法审中-公开
标题翻译：半导体芯片测试仪和半导体芯片测试方法
公开(公告)号：JP2015049137A
公开(公告)日：2015-03-16
申请号：JP2013180903
申请日：2013-09-02
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： NAKAHARA TAKEHIKO , UEDA TOSHIYUKI , SAKAI TADAYUKI , SUGAI SHIYUNTA
IPC分类号： G01R31/26
摘要：【課題】半導体チップの位置ずれが発生せずに試験が可能である、半導体チップ試験装置及び方法を提供する。【解決手段】半導体チップの電気特性を測定する半導体チップ試験装置101であって、上側プローブ111を有する上部検出部110と、弾性を有する下側プローブ121を有する下部検出部120とを備え、下部検出部は、さらに、半導体チップを支持するチップ載置部材122と、下側プローブを支持するプローブ支持体123と、チップ載置部材又はプローブ支持体に接続され、吸引動作によって半導体チップをチップ載置部材に保持する吸着機構124とを有する。【選択図】図1
摘要翻译：要解决的问题：提供一种半导体芯片测试装置和半导体芯片测试方法，该半导体芯片测试装置和半导体芯片测试方法能够进行测试而不会发生半导体芯片的位置偏移。解决方案：一种用于测量半导体芯片的电性能的半导体芯片测试器101，包括：上部检测单元110，其包括上部探针111; 以及包括弹性下探针121的下检测单元120.下检测单元120还包括：支撑半导体芯片的芯片安装构件122; 支撑下探针121的探针支架123; 以及连接到芯片安装构件122或探针支撑件123的真空吸盘机构124，并且通过真空卡盘操作将半导体芯片保持在芯片安装构件122上。

2. 发明专利

JP2013231937A Optical device and manufacturing method thereof 审中-公开
标题翻译：光学装置及其制造方法
公开(公告)号：JP2013231937A
公开(公告)日：2013-11-14
申请号：JP2012224968
申请日：2012-10-10
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YASUI NOBUYUKI , NAKAHARA TAKEHIKO , SHIMONO MASAYA , FUKUDA KEIICHI , MOCHIZUKI KEITA , ARIGA HIROSHI , UTO KENICHI , MURAO SATOSHI , KODERA HIDEKAZU
IPC分类号： G02B7/02 , G02B6/32 , G02B7/00
CPC分类号： G02B7/003 , G02B6/3656 , G02B6/4225 , G02B6/4226 , G02B6/4237 , G02B7/023
摘要： PROBLEM TO BE SOLVED: To provide an optical device capable of accurately and quickly achieving optical alignment with respect to two directions vertical to an optical axis direction, and a manufacturing method thereof.SOLUTION: The manufacturing method of the optical device including a lens 3 having an optical axis in a Z direction, a lens holder 5 holding the lens 3, and a holder carrier 6 having the lens holder 5 fixed thereto includes the steps of preparing the lens holder 5 which has a horizontal member 51 extending in an X direction and two vertical members 52a and 52b extending in a Y direction, fixing the lens 3 to the horizontal member 51, fixing the vertical members 52a and 52b to the holder carrier 6, plastically deforming the horizontal member 51 by irradiation with laser light to adjust the position of the lens 3 in the X direction, and plastically deforming the vertical members 52a and 52b by irradiation with laser light to adjust the position of the lens 3 in the Y direction.
摘要翻译：要解决的问题：提供一种能够准确且快速地实现与光轴方向垂直的两个方向的光学对准的光学装置及其制造方法。光学装置的制造方法包括具有在Z方向的光轴，保持透镜3的透镜保持件5和固定有透镜保持器5的保持架6包括准备透镜保持件5的步骤，该透镜保持器5具有在X方向上延伸的水平构件51，两个垂直构件52a和52b沿Y方向延伸，将透镜3固定在水平构件51上，将垂直构件52a和52b固定到保持器支架6上，通过用激光照射来使水平构件51发生塑性变形，在透镜3的X方向上，通过用激光照射使垂直构件52a，52b发生塑性变形，从而将透镜3的位置调整为Y直线离子。

3. 发明专利

JP2014235573A 半導体装置、半導体装置の製造方法および個体識別情報取得方法审中-公开
标题翻译：半导体器件，制造半导体器件的方法和用于获得个体识别信息的方法
公开(公告)号：JP2014235573A
公开(公告)日：2014-12-15
申请号：JP2013116676
申请日：2013-06-03
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： TAKENAKA MICHIAKI , NAKAHARA TAKEHIKO
IPC分类号： G06K19/06 , G06K7/12
摘要：【課題】半導体装置に形成される識別媒体の面積を小さくする技術を提供する。【解決手段】半導体装置1は、半導体装置1を識別するための個体識別情報を含む識別媒体6を有する。前記個体識別情報は、識別媒体6に含まれる少なくとも1種類の元素によって示される。また、前記個体識別情報は複数のビットで表現され、前記複数のビットのそれぞれには、元素が対応付けられ、前記複数のビットのそれぞれについて、当該ビットの値は、当該ビットに対応付けられた元素を識別媒体6が含むか否かによって示される。【選択図】図1
摘要翻译：要解决的问题：提供一种减小形成在半导体器件上的识别介质的面积的技术。解决方案：半导体器件1具有识别介质6，其包括用于识别半导体器件1的单独的识别信息。个体识别信息由包含在识别介质6中的至少一种元素表示。各个识别信息由多个比特表示。多个比特中的每一个与元素相关联。对于多个位中的每一个，通过识别介质6是否包括与位相关联的元素来指示位值。

4. 发明专利

JP2014165451A Collet, and apparatus and method for conveying chip component 审中-公开
标题翻译：胶条，以及用于输送芯片组件的装置和方法
公开(公告)号：JP2014165451A
公开(公告)日：2014-09-08
申请号：JP2013037460
申请日：2013-02-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SUGAI SHIYUNTA , UEDA TOSHIYUKI , NAKAHARA TAKEHIKO
IPC分类号： H01L21/52
摘要： PROBLEM TO BE SOLVED: To provide a collet capable of preventing a dicing crack piece deposited to an end portion of a chip from being dropped when installing a chip component on a stage.SOLUTION: The collet for holding a chip component by sucking it comprises: a collet body 20 including a suction hole in a chip adsorption surface; an inner wall 20a provided around the suction hole on the chip adsorption surface; and an outer wall 20b provided around the inner wall on the chip adsorption surface. When a height of the inner wall 20a is defined as Ha and a height of the outer wall 20b is defined as Hb, Ha>Hb is satisfied.
摘要翻译：要解决的问题：提供一种能够防止沉积在芯片的端部上的切割裂纹件在将芯片部件安装在平台上时掉落的夹头。解决方案：通过将芯片部件吸附而夹持的夹头包括：在芯片吸附面上具有抽吸孔的筒夹体20; 设置在芯片吸附面上的吸入孔周围的内壁20a; 以及设置在芯片吸附表面上的内壁周围的外壁20b。当内壁20a的高度被定义为Ha且外壁20b的高度被定义为Hb时，满足Ha> Hb。

5. 发明专利

JP2004165534A Semiconductor device and its fabricating method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2004165534A
公开(公告)日：2004-06-10
申请号：JP2002331697
申请日：2002-11-15
申请人： Mitsubishi Electric Corp , Renesas Semiconductor Engineering Corp , 三菱電機株式会社 , 株式会社ルネサスセミコンダクタエンジニアリング
发明人： NAKAHARA TAKEHIKO , UEKADO TORU , ISHIDA TOMOAKI , INOUE SHINYA , NAKAMURA NAOYA
IPC分类号： H01L21/3065 , H01L21/3205 , H01L21/768 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a fabricating method of a via hole in which polymers containing a great deal of Ti can be eliminated and besides cleaning liquid making and waste liquid treatment are easily performed.
SOLUTION: The semiconductor device fabricating method includes processes as follows: An Al interconnection film 1, a Ti antireflection film 2 and an interlayer insulative film 3 are stacked to form a laminate; photoresist patterns 4 are formed on the interlayer insulative film 3 and a via hole 7 reaching the Al interconnection film 1 or the Ti antireflection film 2 is formed in the interlayer insulative film 3 by performing etching defining these patterns as a mask (step S1); the photoresist patterns 4 are eliminated by ashing (step S2); and cleaning is performed by an acidic solution containing a carboxylic acid and aqueous hydrogen peroxide (step S3).
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种可以消除含有大量Ti的聚合物的通孔的制造方法，并且容易进行清洗液的制造和废液处理。解决方案：半导体器件制造方法包括如下工艺：将Al互连膜1，Ti抗反射膜2和层间绝缘膜3层叠以形成层压体; 在层间绝缘膜3上形成光致抗蚀剂图案4，并通过将这些图案作为掩模进行蚀刻，在层间绝缘膜3中形成到达Al互连膜1或Ti抗反射膜2的通孔7（步骤S1）。通过灰化消除光致抗蚀剂图案4（步骤S2）; 并通过含有羧酸和过氧化氢水溶液的酸性溶液进行清洗（步骤S3）。版权所有（C）2004，JPO

6. 发明专利

JPH11274426A Method for forming cylindrical storage node, method for forming memory cell, and memory cell 失效
标题翻译：形成圆柱存储节点的方法，形成记忆细胞的方法和存储单元
公开(公告)号：JPH11274426A
公开(公告)日：1999-10-08
申请号：JP7732998
申请日：1998-03-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAHARA TAKEHIKO , SAWAI HISAHARU , YOSHIFUKU RYOICHI , KURIMOTO HIROKO , SAKAMOTO TATSUYA
IPC分类号： H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a cylindrical storage node of a complex structure in less processes.
SOLUTION: A material which is to be a core of a cylindrical storage node 8 is formed with a first silicon film, and a second silicon film is made to stick to the side surface of the core, forming a cylindrical shape. Under a condition wherein the first silicon film is etched earlier than the second silicon film, the film thickness of the core is selectively reduced by utilizing difference in etching rate. Thus, a bottom surface part 7a constituting the storage node is obtained. A cylindrical storage node comprising the bottom surface part 7a and a cylindrical part 7b formed with the second silicon film is provided.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：在较少的过程中提供复杂结构的圆柱形存储节点。解决方案：作为圆筒形存储节点8的芯的材料形成有第一硅膜，并且使第二硅膜粘附到芯的侧表面，形成圆柱形。在第一硅膜比第二硅膜早蚀刻的条件下，通过利用蚀刻速率的差异来选择性地降低芯的膜厚度。从而获得构成存储节点的底面部7a。提供了包括底表面部分7a和形成有第二硅膜的圆柱形部分7b的圆柱形存储节点。

7. 发明专利

JP2000208495A METHOD AND SYSTEM FOR PLASMA PROCESSING 失效
公开(公告)号：JP2000208495A
公开(公告)日：2000-07-28
申请号：JP936799
申请日：1999-01-18
申请人： MITSUBISHI ELECTRIC CORP , RYODEN SEMICONDUCTOR SYST ENG
发明人： SAWAI HISAHARU , YOSHIFUKU RYOICHI , FURUSE NORIYUKI , NAKAHARA TAKEHIKO , HIRAMATSU KENJI , UMESHITA NAOMI , KATSUTA HIROMOTO , FUJIMOTO SEIJI
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To stabilize processing in a plasma processing system such that two values of microwave power correspond to one value of RF voltage Vpp. SOLUTION: A correlation curve measuring mechanism 13f is provided in a controller 13d in order to find the correlation curve between a microwave power and an RF voltage Vpp received from an RF voltage detector 13a through the correlation curve measuring mechanism 13f. The correlation curve measuring mechanism 13f determines a set value of microwave power from the correlation curve. The controller 13d controls microwave power of a magnetron, based on the set value.

8. 发明专利

JPH07239310A ELECTROMAGNETIC WAVE DETECTOR AND SUBSTRATE PROCESSING APPARATUS 失效
公开(公告)号：JPH07239310A
公开(公告)日：1995-09-12
申请号：JP2947694
申请日：1994-02-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAHARA TAKEHIKO , ECCHU MASAO , KOSAKA NORIYUKI
IPC分类号： G01N23/223 , G01N21/67
摘要： PURPOSE:To obtain an electromagnetic wave detector capable of detecting even a weak electromagnetic wave when a plurality of electromagnetic waves large in intensity ratio are measured and a substrate processing apparatus having a function capable of measuring the change of a compsn. during substrate processing work. CONSTITUTION:A total reflection mirror 31 as an optical element allowing the characteristic X-rays 7a from an element high in intensity among characteristic X-rays emitted from a sample 1C to selectively transmit to attenuate the same and selectively reflecting the characteristic X-rays 7b from an element low in intensity and a slit 32 as an intensity adjusting mechanism adjusting the intensity of characteristic X-rays 7a are provided. The characteristic X-rays 7b reflected by the total reflection mirror 31 and the characteristic X-rays 7a adjusted in intensity by the slit 32 are detected by the same semiconductor X-ray detector 6 and, when characteristic X-rays large in intensity ratio generated from the elements in the sample 1C are measured, even a weak electromagnetic wave can be detected.

9. 发明专利

JPH06184738A FORMATION OF CARBON THIN FILM, ITS MODIFYING METHOD, ELECTRONIC DEVICE FORMED BY USING THIS MODIFYING METHOD AS WELL AS X-RAY MULTILAYER FILM MIRROR AND ITS PRODUCTION 失效
公开(公告)号：JPH06184738A
公开(公告)日：1994-07-05
申请号：JP2970093
申请日：1993-01-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： HANASATO YOSHIO , MIYAMOTO MAKOTO , NISHIKAWA TOMOSHI , ISODA SATORU , AKIYAMA KOICHI , NAKAHARA TAKEHIKO
IPC分类号： C01B31/02 , C23C14/32 , D01F9/127 , G02B5/08 , G21K1/06 , H01L21/203 , H01L29/861 , H01L31/10 , H01L39/12 , H01L29/91
摘要： PURPOSE:To provide the method for formation of the carbon thin film capable of forming a thin film of flat carbon molecules, its modifying method, the electronic device formed by using this method as well as the X-ray multilayer film mirror and its production. CONSTITUTION:The molecules consisting of plural carbon atoms of any shape of polyhedron, cylinder or spiral or the molecules exclusive of these molecules or atoms are ionized >=1 and the ions are accelerated and deposited by evaporation on a substrate 46. The modifying method consists subjecting the above- mentioned carbon thin film to ion implantation or to a heat treatment together with the ion implantation. The above-mentioned carbon thin film is fullerenes or carbon nanotube.

10. 发明专利

JPH06174901A SPECTROSCOPIC CRYSTAL 失效
公开(公告)号：JPH06174901A
公开(公告)日：1994-06-24
申请号：JP32663092
申请日：1992-12-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAHARA TAKEHIKO , ECCHU MASAO , KOSAKA NORIYUKI
IPC分类号： G02B1/02
摘要： PURPOSE:To spectroscopically obtain soft X-rays having sufficient intensity from white X-rays by using a spectroscopic crystal comprising polyhedrally shaped molecules, each of which consists of plural carbon atoms. CONSTITUTION:A single crystal comprises as the unit constituent the fullerene C82 1 which is a carbon molecule having a polyhedral structure consisting of 82 carbon atoms and lanthanum 2 in such a state that the lanthanum 2 is enclosed in the fullerene C82 1. Therefore each lanthanum 2 is arranged to form the periodic structure of the same intervals as those of the periodic structure consisting of molecules of the fullerene C82 1. The single crystal comprising these structures is cut by the cleavage, etc., to form the cross sectional plane AA' and used as the spectroscopic crystal. When parallel X-rays enter at and exit from this cross sectional plane AA', the incident X-rays are scattered by the carbon atom and the lanthanum 2, both of which are constituents of their respective periodic structures. At this time the X-ray scattering power of the lanthanum 2 of atomic number 57 is higher than that of the carbon atom of atomic number 6. Coincidently X-ray diffraction due to the scattering by the carbon atom and the lanthanum 2 in the periodic structures occurs and the intensity of the diffracted X-rays is remarkably higher than that obtained in the absence of the lanthanum 2.

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