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1. 发明专利

JPH04199588A OPTICAL SEMICONDUCTOR DEVICE STEM 失效
公开(公告)号：JPH04199588A
公开(公告)日：1992-07-20
申请号：JP33533990
申请日：1990-11-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA KAZUTOMI
IPC分类号： H01L21/60 , H01S5/00
摘要： PURPOSE:To enable two or more active devices not on the same plane to be connected to one lead terminal with wires by shaping a lead terminal in a crank form and in a form comprising two or more flat planes not on the same plane. CONSTITUTION:A lead terminal 14 provided in insulation through a stem body 1 is shaped in a crank form and comprises two or more bondable flat planes 14a, 14b not on the sane plane to make one lead terminal have function as a plurality of electric terminals. Therefore, an optical semiconductor device can be obtained where the one lead terminal 14 is equipped with function as a plurality of electric terminals. This allows wire connection to a plurality of active devices not on the same plane.

2. 发明专利

JPH03109780A SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
公开(公告)号：JPH03109780A
公开(公告)日：1991-05-09
申请号：JP24882389
申请日：1989-09-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA KAZUTOMI
IPC分类号： H01L33/58
摘要： PURPOSE:To obtain high condensing characteristics by positioning and fixing a flat rear face of a silicon substrate formed with a semi-spherical protrusion serving as a condenser lens on the surface on a surface of a semiconductor light emitting element radiating non-directional light. CONSTITUTION:On a flat surface of a semiconductor light emitting element 2 radiating non-directional light, a flat rear face of a silicon substrate 4 formed with a semi-spherical protrusion 5 serving as a condenser lens on the surface is positioned and fixed. That is, since micro-processibility of the silicon substrate 4 is more excellent than glass moldability, it is easy to form the protrusion 5 in a more geometrically complete semi-sphere. In addition, when the protrusion 5 of the silicon substrate 4 is to be positioned, the flat rear face of the silicon substrate 4 can be freely moved on the flat surface of the semiconductor light emitting element 2 so that a position of fixing the protrusion 5 can be adjusted and fixed to the optimum position for the protrusion 5 fixed position to exhibit high condensing function. Thus high condensing characteristics can obtained.

3. 发明专利

JPS62172767A OPTICAL SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62172767A
公开(公告)日：1987-07-29
申请号：JP1408186
申请日：1986-01-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA KAZUTOMI , HIGUCHI HIDEYO , MIZUOCHI HITOSHI , YAMAMOTO YOUSUKE
IPC分类号： H01L31/0232 , H01L31/12 , H01L33/58 , H01L33/62 , H01S5/00 , H01S5/026
摘要： PURPOSE:To improve the efficiency of assembling work without necessity of inclining a photodetector and to improve the photoelectric conversion efficiency by providing a spherical lens having larger photodetecting area than the photodetecting unit of the photodetector between a light emitting element and the photodetector, directing the curved surface of the spherical lens toward the light emitting element to prevent the reflected light from being returned to the light emitting element. CONSTITUTION:When a current is injected by a lead terminal 33 to a light emitting element 20, lights 22a, 22b are emitted. The light 22a emitted from the back surface is collected by a spherical lens 29 fixed to a photodetector 21 to be introduced to a photodetector 25. In this case, since the light 22a of the area larger than the surface area of the photodetector 25 can be input by the effect of the lens 29, the photoelectric conversion efficiency is improved, the reflected light 22c on the surface of the lens 29 is scattered so that the light returned to the element 20 is reduced. Accordingly it is not necessary to mount obliquely the photodetector 21 to improve the efficiency of the mounting.

4. 发明专利

JPS61172338A MESA TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61172338A
公开(公告)日：1986-08-04
申请号：JP1382585
申请日：1985-01-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA KAZUTOMI , TAKAHASHI KAZUHISA , SHIBA TETSUO , IKEDA KENJI
IPC分类号： H01L21/312
摘要： PURPOSE:To reduce any surface leak current while protecting corners of mesa groove from being damaged, by a method wherein P-N junction part exposed to a mesa groove is covered surely to protect the surface of P-N junction part of semiconductor device actuated by means of impressing the P-N junction part with reverse bias. CONSTITUTION:The first polyimide layer 8a is preliminarily formed on the surface of peripheral part of mesa groove 7 to form a step difference while the second polyimide layer 8b is formed on overall surface of the mesa goove 7 and the first polyimide layer 8a to protect a P-N junction part 4. A step difference is formed in the photoreceiving part of photodiode since the outer surface outside the mesa groove 7 part is coated with the polyimide layer 8a to raise the wall surface of mesa groove 7 by the thickness of layer 8a. Resultantly if the step difference part is further coated with the polyimide layer 8b, polyimide flows into the mesa groove 7 sufficiently due to the step difference in the inner wall of mesa groove 7 to cover the inner wall whereto P-N junction part 4 is exposed. Therefore any dark current may be prevented from flowing when the P-N junction part 4 is irradiated with light. Moreover any corners may be protected from being damaged owing to the polyimide layer 8b covering the corners of mesa groove 7.

5. 发明专利

JPH0362983A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH0362983A
公开(公告)日：1991-03-19
申请号：JP19850289
申请日：1989-07-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： TADA KATSUHISA , YOSHIDA KAZUTOMI
IPC分类号： H01S5/00
摘要： PURPOSE:To enable Im of a monitor PD after assembly to be reduced and a heat sink block on assembly to be positioned by forming a monitor PD mount part for both recessed and projecting types on the upper surface of a stem. CONSTITUTION:A monitor PD chip 4 is soldered to a monitor PD mount part 6 of a stem 5 of both recessed and projecting type. The monitor PD chip 4 is located at the center of the stem 5. Then, a block where a laser chip 1, a submount 2, and a heat sink block 3 are soldered is soldered to the stem 5. At this time, the laser chip 1 is located on the light-receiving surface of the monitor PD chip 4 referring to a projecting part of the monitor PD mounting part 6. Then, the gap between the laser chip 1 and the monitor PD chip 4 becomes wider as compared with the conventional stem having a monitor PD mount part in projecting shape.

6. 发明专利

JPH01130576A SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
公开(公告)号：JPH01130576A
公开(公告)日：1989-05-23
申请号：JP29132087
申请日：1987-11-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA KAZUTOMI
IPC分类号： H01L33/20 , H01L33/30
摘要： PURPOSE:To improve coupling efficiency with an optical fiber, and enable inspecting characteristics of each element in a wafer state, by forming the vicinity of light emitting point of a light emitting end surface into a semicolumar type, and arranging the light emitting point in the rear of chip end surface. CONSTITUTION:A light emitting end surface 13 formed into a columnar type has lens effect. Light output outward after refracted by said surface is bent in an active layer axis direction, and a light beam 12 has a beam spot whose light density is highest in the front of the light emitting end surface 13. By arranging an optical fiber 16 at the spot position, the light can be transmitted into the optical fiber 16 with high coupling efficiency. In a wafer state, each end surface light emitting diode chip exposes the light emitting end surface 13, and is electrically isolated, so that the chip can be driven by injecting a current from outside, and characteristics of each chip can be inspected in a wafer state.

7. 发明专利

JPS63248141A MEASURING DEVICE FOR OPTICAL SEMICONDUCTOR CHARACTERISTIC 失效
公开(公告)号：JPS63248141A
公开(公告)日：1988-10-14
申请号：JP8317187
申请日：1987-04-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA KAZUTOMI , HIGUCHI HIDEYO
IPC分类号： H01L21/66 , H01L33/58
摘要： PURPOSE:To measure the characteristics of an optical semiconductor in the state of a wafer by a method wherein the title device is provided with an optical fiber with a spherical lens, an automatic optical axis matching unit, a photo output meter and an optical spectrum analyzer. CONSTITUTION:When the point of a probe electrode 3 comes into contact to a surface electrode 12, a current flows to an LED 11 through an electrode stand 1 and light 14 is emitted through a window 13. The light reaches an automatic optical axis matching unit 8 via an optical fiber 7 with a spherical lens and the unit 8 transfers the fiber to a position of the maximum coupling efficiency. After this, the light 14 is measured its output value by a meter 9 and the central wavelength and the half-value width of the wavelength are measured by a spectrum analyzer 10. By this constitution, as the measurement of the fiber coupling output characteristic and the optical spectrum characteristic of an optical semiconductor is conducted in the state of a wafer and the semiconductor can be preselected, the inspecting yield in after it is assembed is improved.

8. 发明专利

JPS63198380A CHIP-CARRIER TYPE PHOTO-SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63198380A
公开(公告)日：1988-08-17
申请号：JP3201887
申请日：1987-02-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA KAZUTOMI , HIGUCHI HIDEYO
IPC分类号： H01L31/0248 , H01L21/60 , H01L23/13 , H01L31/0203 , H01L33/62
摘要： PURPOSE:To make the handling easy and to prevent the damage due to a drop, a rotation or the like by forming protruding parts, whose height is higher than the top of a metal wire which connects a photo-semiconductor device to a metallized terminal, at required parts on the face where the photo-semiconductor device for a carrier unit is mounted. CONSTITUTION:Protruding parts 5 which have been installed to protect a semiconductor photodetector (PD) 3 and an Au wire 4 are formed to be higher than the top of the Au wire 4 at required parts on the face where the PD 3 for a carrier unit 1 and the Au wire 4 have been mounted, e.g. in such a way that the protruding parts surround the PD 3 and the An wire 4 on both sides of the carrier unit 1. By this setup, it is possible to prevent the damage of the PD 3 and the Au wire 4 due to a drop, a rotation or the like while a chip- carrier type photo-semiconductor device is assembled, inspected and transferred; it becomes easy to handle the device.

9. 发明专利

JPS63161680A SEMICONDUCTOR PHOTODETECTOR 失效
公开(公告)号：JPS63161680A
公开(公告)日：1988-07-05
申请号：JP31037886
申请日：1986-12-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA KAZUTOMI , HIGUCHI HIDEYO
IPC分类号： H01L31/10 , H01L31/02 , H01L31/103
摘要： PURPOSE:To improve photodetection efficiency and improve response characteristics by providing a photodetecting window with a dome shape. CONSTITUTION:A light 8 applied to a photodetector enters through a photodetecting window 7. Because of the dome shape of the window 7, the light 8 is refracted at the window 5 and condensed toward the center part of a P-N junction 3. The light which reaches the P-N junction 3 is absorbed by a depletion layer which is spread in the junction 3 and electron-hole pairs are produced. The pairs are drifted by an electric field induced by a reverse bias voltage applied to the P-N junction beforehand and are taken out as a photocurrent. At that time, as the light is condensed by the dome-shaped photodetecting window, the light corresponding to the area larger than the area of the P-N junction can be introduced into the P-N junction so that photodetection efficiency can be improved.

10. 发明专利

JPH0567690A CAPPING DEVICE 失效
公开(公告)号：JPH0567690A
公开(公告)日：1993-03-19
申请号：JP25575291
申请日：1991-09-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA KAZUTOMI
IPC分类号： H01L21/50 , H01L23/02 , H01S5/00
摘要： PURPOSE:To enable a cap and a semiconductor chip to be enhanced in relative positional accuracy by a method wherein the position adjustment of parts is automatically carried out taking advantage of the image data of the parts. CONSTITUTION:When an optical semiconductor element 3 is capped, the images of the optical semiconductor element 3 and a cap 1 are picked up by a camera 9 through a window glass 2, and the images are displayed on a CRT display 10. Then, the displayed image is processed into signals through an image processing device 11, and data that tell how distant time optical semiconductor chip 3 is located from the cap 1 on the basis of the outer periphery of the cap 1 are outputted. A control device 12 drives an upper electrode 4 receiving the data concerned so as to pout the cap 1 in position. After the cap 1 is located at an optimal position, and the cap 1 is welded at a welding point 7. As mentioned above, the position adjustment of the cap 3 is automatically carried out basing on the relative position data of the cap 1 and the optical semiconductor chip 3, so that a capping operation excellent in position accuracy can be easily executed.

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