专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2000323777A SEMICONDUCTOR LASER ELEMENT AND ITS MOUNTING METHOD AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000323777A
公开(公告)日：2000-11-24
申请号：JP13117299
申请日：1999-05-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII MITSUO
IPC分类号： H01S5/00 , H01S5/022
摘要： PROBLEM TO BE SOLVED: To prevent a light emission point from being shaded by a solder ball and reduce light eclipse defective ratio due to generation of a solder ball by die-bonding a sub-mount asymmetrically right and left to a light emission point of a laser diode chip. SOLUTION: In a semiconductor laser element, a laser diode chip 1 and a sub-mount 2 are joined by using solder 4. The solder 4 in an outermost surface of the sub-mount 2 protrudes outside the laser diode chip 1 by die-bonding the sub-mount 2 laterally asymmetrically to a light emission point 5 of the laser diode chip 1 to protrude from the laser diode chip 1. Thereby, excess solder which is generated as a solder ball in the light emission point 5 functions to move to a solder surface part protruding outside the laser diode chip 1 and eclipse defect of light due to a solder ball at a light emission point in a prior art can be prevented.

2. 发明专利

JPH05183239A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH05183239A
公开(公告)日：1993-07-23
申请号：JP23192
申请日：1992-01-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII MITSUO
IPC分类号： H01L31/10 , H01S3/08 , H01S5/00 , H01S5/10 , H01S3/18 , H01S3/085
摘要： PURPOSE:To enter the laser beams emitted from an LD chip into a PD chip as direct beams without reflecting them on a submount surface within the title semiconductor laser assembled into L/D. CONSTITUTION:The size in a resonator length direction of a substrate 2 is specified to be smaller than that of the resonator length direction of an LD chip 1 while both ends of the submount 2 are respectively positioned inside both end surface 10 so that the title high reliable semiconductor laser displaying no characteristic fluctuation due to an environmental test, etc., may be manufactured.

3. 发明专利

JPH05102617A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH05102617A
公开(公告)日：1993-04-23
申请号：JP29060691
申请日：1991-10-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII MITSUO
IPC分类号： H01L23/32 , H01L23/34 , H01L33/64 , H01S5/00
摘要： PURPOSE:To prevent solder from running up on an inclined base in the center of a package and sticking to the side of a PD submount and the PD chip upper face in a system wherein soldering is performed while pressing a heat dissipating block against the inclined base. CONSTITUTION:A photodiode 4 and a PD submount 5 are set up and a groove 10 is provided at the central part in the side face to be stuck to a heat dissipating block 3 in an inclined base 7 located in the center of a package 6. Accordingly, when the heat dissipating block 3 is pressed to the inclined base 7 to be stuck to the package, short circuit due to solder flowing into the groove and sticking to the PD submount side as well as to the PD chip upper surface can be avoided.

4. 发明专利

JPH03187234A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03187234A
公开(公告)日：1991-08-15
申请号：JP32624589
申请日：1989-12-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： HIGUCHI HIDEYO , ISHII MITSUO
IPC分类号： H01L21/52
摘要： PURPOSE:To obtain a sufficient bonding strength without scrubbing by a method wherein a plate-shaped solder having a sufficiently smaller area than the area of the bonding surface of an optical semiconductor chip is provided. CONSTITUTION:A plate-shaped solder 2 having a sufficiently smaller area than the area of the bonding surface of a semiconductor chip 1 is placed between the semiconductor chip 1 and a bonding part. The semiconductor chip 1, the solder 2 and the bonding part are heated to a temperature higher than the melting point of the solder and a pressure is applied to the upper part of the semiconductor chip 1 to bond the semiconductor chip 1 to the bonding part with the solder 2. When the solder 2, for instance AuSn solder, is mashed by the optical semiconductor chip 1, as the area of the solder is small, the new solder which is not covered with an oxide film 3 bursts forth and the oxide film 3 is cut to pieces and the gap between the optical semiconductor chip 1 and the bonding part is filled with the new solder. With this constitution, a sufficient bonding strength can be obtained without scrubbing.

5. 发明专利

JPH02253689A SEMICONDUCTOR ARRAY LASER 失效
公开(公告)号：JPH02253689A
公开(公告)日：1990-10-12
申请号：JP7572289
申请日：1989-03-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII MITSUO
IPC分类号： G11B7/125 , G11B7/14 , H01S3/23 , H01S5/00 , H01S5/40
摘要： PURPOSE:To eliminate optical interference of the rear laser beams of two LD chips and facilitate independent and simultaneous monitoring of the two LD chips by a method wherein photodiodes which detect the rear laser beams are formed on the same plane of a submount and beam splitters are provided on the respective photodiodes. CONSTITUTION:An LD array chip 1 has a plurality of LD chips isolated from each other by an isolation trench 2. Photodiodes 11 and 12 which detect laser beams emitted from the respective light emitting points of the LD array chip 1 are formed adjacent to each other by diffusion in accordance with the number of light emitting points. Beam splitters 14 and 15 are provided on the respective photodiodes 11 and 12. With this constitution, optical interference of the laser beams 18 and 19 emitted from the respective LD chips in the LD array chip 1 can be eliminated and the respective LD chips can be driven and controlled independently and simultaneously.

6. 发明专利

JPH02139984A SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH02139984A
公开(公告)日：1990-05-29
申请号：JP29341588
申请日：1988-11-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAGAI SEIICHI , ISHII MITSUO , HASEGAWA KAZUYOSHI
IPC分类号： H01S5/00 , G02B6/42
摘要： PURPOSE:To obtain a semiconductor laser device which, provides an excellent coupling efficiency and very little variation of the coupling efficiencies among the devices by a method wherein a piercing hole which can hold a lens and into which an optical fiber is inserted to a required depth to be fixed is provided in a cap. CONSTITUTION:After a heatsink 2 to which an LD chip 1 is bonded is mounted on a stem 6 so as to have the light emitting point of the LD chip 1 correspond to the center axis of the stem 6, a cap 8 to which a lens 3 is attached in its piercing hole 8a is put on the stem 6. Then the LD chip 1 is made to emit a light and the cap 8 is delicately moved to X and Y directions while the light is monitored by a photodetector mounted so as to face the LD chip and, when the light axis is aligned, the cap 8 is fixed by welding by a capping device. After that, an optical fiber 9 is inserted into the hole 8a of the cap S, the LD chip 1 is made to emit a light, the optical fiber 9 is delicately moved to a Z direction while a light comong out of the other end of the optical fiber 9 is monitored by a photodetector and, when the light axis is aligned, the optical fiber 9 is fixed to the cap 8 with resin adhesive such as epoxy resin adhesive.

7. 发明专利

JPH01293691A SUBMOUNT FOR SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH01293691A
公开(公告)日：1989-11-27
申请号：JP12662388
申请日：1988-05-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII MITSUO , NAGAI SEIICHI , HASEGAWA KAZUYOSHI , TANAKA TOSHIO
IPC分类号： H01S5/00 , H01S5/02
摘要： PURPOSE:To enhance the reliability by a method wherein a ternary alloy of Sn, Ag and Sb is used as a solder agent for an outermost surface in order to eliminate a defect of the bonding strength and to keep a solder surface state stable. CONSTITUTION:A submount which is inserted and fixed, as a thermal stress relaxation material, between a semiconductor laser element and a metal block tor heat dissipation use is constituted in such a way that a barrier layer 2 composed of a Ti layer 21, an Ni layer 22 and an Ag layer 23 is formed on both faces of a conductive Si substrate 1 by evaporation or the like and that a layer 3 of a ternary alloy solder composed of Sn, Ag and Sb is formed on the barrier layer 2. Since this solder layer 3 is soft at a hardness of 3.5 Hv, a thermal stress strain which is exerted on the laser element fixed onto the submount is small. Since the layer 3 is hardly subjected to a thermal fatigue due to a heat cycle characteristic, a chip is not detached due to a defect of the bonding strength. Wince a surface state of the layer 3 is hard to change, the quantity of light which is incident on a photodiode for monitoring a laser beam output is not changed with the passage of time; a fluctuation in a characteristic can be reduced.

8. 发明专利

JPS63262885A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS63262885A
公开(公告)日：1988-10-31
申请号：JP9900287
申请日：1987-04-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAGAWA HITOSHI , ISHII MITSUO
IPC分类号： H01S5/00
摘要： PURPOSE:To drive each light-emitting point independently, to prevent the generation of thermal relaxation and the thermal relaxation time and to improve laser radiant efficiency by connecting electrodes to respective light-emitting point of a semiconductor laser to a plurality of electrode patterns formed onto the surface of a radiator. CONSTITUTION:Electrically independent electrode patterns 10, 11 are shaped onto the surface of a radiator 1, and wires 12, 13 are bonded with the patterns 10, 11 while electrodes 14, 15 formed on the surface on the light-emitting point side of a semiconductor laser chip 2 are connected through junction down. When the wires 12, 13 are supplied with driving currents, the currents of the wire 12 are fed to the electrode 14 shaped to one side section of the chip 2 separated by a trench 5 through the pattern 10, and flow through a wire 8 from an electrode 6 through the light emission side of laser beams 3. Likewise, currents fed to the wire 13 flow through the wire 8 through the electrode pattern 11, the electrode 15 on the other side of the chip 2, the light emission side of laser beams 4 and the electrode 6. Accordingly, when the driving currents of the wires 12, 13 are controlled, laser beams 3 can be controlled.

9. 发明专利

JPS63160292A SUBMOUNT FOR OPTICAL SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS63160292A
公开(公告)日：1988-07-04
申请号：JP31561786
申请日：1986-12-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII MITSUO , TSUMURA KIYOAKI
IPC分类号： H01L33/12 , H01L33/14 , H01L33/30 , H01L33/62 , H01S5/00
摘要： PURPOSE:To maintain the product quality at a desired level with stability by a method wherein a Ti-Ni-Au barrier layer is provided on both sides of an Si submount and the barrier is covered by a solder layer. CONSTITUTION:On both sides of an Si conductive submount 2, a 500Angstrom -thick Ti first layer 31, a 1500Angstrom -thick Ni second layer 32, and a 500Angstrom -thick Au third layer 33, are formed by spattering, for the construction of a barrier layer 3. The entire surface of the barrier layer 3 is covered by an Sn solder coating. With the layers 31 and 32 in the buffer layer 3 preventing the spread of Si over the surface, there will be no Si oxide formed on the surface. This dispenses with a washing in an inorganic solvent during the packaging process and a product of this design may be stored in the ambient atmosphere. This design keeps stable the quality of products in storage.

10. 发明专利

JPS63132495A SUB-MOUNT FOR PHOTO-SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63132495A
公开(公告)日：1988-06-04
申请号：JP27906886
申请日：1986-11-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUMURA KIYOAKI , ISHII MITSUO
IPC分类号： H01L21/52 , H01L23/36 , H01L33/30 , H01L33/62 , H01S5/00
摘要： PURPOSE:To obtain a sub-mount tor a photo-semiconductor device of selectable electrical insulation properties by constructing a sub-mount substrate with a Ti substrate having both surfaces thermally oxidized, providing a multilayered conductor layer on both surfaces of it, and selectively providing solder layers on both surfaces of the multilayered conductor layer. CONSTITUTION:On the surfaces of a Si substrate 11, thermally oxidized films 12 are formed which have ohmic characteristics that are not affected by a temperature change, constituting a sub-mount substrate 1. On both surfaces of the substrate 1, a Ti layer 21, a Ni layer 22 and a Au layer 23 are sequentially stacked, forming a wiring layer 2 also acting as a diffusion barrier layer. On the principal surface of the wiring layer 2, a Sn solder layer 31 is formed on the whole surface, and on the reverse side thereof, a Sn solder layer 32 is formed only in a required junction area part. With this, a sub-mount for a photo-semiconductor device of selectable electrical insulation properties is obtained.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式