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1. 发明专利

JPH0679059B2 失效
公开(公告)号：JPH0679059B2
公开(公告)日：1994-10-05
申请号：JP17690886
申请日：1986-07-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ISHIKAWA OONORI , TODA KAZUO
IPC分类号： G01R19/155 , G01D5/26 , G01R15/24 , G01R33/032 , G02B7/00 , G01R15/07

2. 发明专利

JPS6339676B2 失效
公开(公告)号：JPS6339676B2
公开(公告)日：1988-08-05
申请号：JP7933282
申请日：1982-05-11
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ISHIKAWA OONORI
IPC分类号： C23F4/00 , C23F1/08 , H01L21/302 , H01L21/3065

3. 发明专利

JPS6047738B2 JPS6047738B2 - 失效
公开(公告)号：JPS6047738B2
公开(公告)日：1985-10-23
申请号：JP11070477
申请日：1977-09-14
申请人： Matsushita Electric Ind Co Ltd
发明人： EZAKI TAKEYA , ISHIKAWA OONORI
IPC分类号： H01L21/28 , H01L21/302 , H01L21/306 , H01L21/3065

4. 发明专利

JPS60140753A SOLID-STATE IMAGE PICKUP DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS60140753A
公开(公告)日：1985-07-25
申请号：JP25062683
申请日：1983-12-27
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YONEDA TADANAKA , ISHIKAWA OONORI , YOSHINO MASARU
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335 , H04N5/359 , H04N5/365 , H04N5/369 , H04N5/372
摘要： PURPOSE:To obtain a device, in which a blooming and a smear are not generated, by depleting a region just under a photodiode region by applying bias voltage and flowing out only excess charges in photoelectric conversion signal charges in the region just under the photodiode region in the direction of a semiconductor substrate in a solid- state image pickup device having a second conduction type region as a charge tansfer region for a CCD and a first conduction type region as the photodiode region on the semiconductor substrate. CONSTITUTION:A P type layer 34 is formed on an N type semiconductor substrate 30, mutually isolated P type regions 35 are diffused and shaped to the layer 34, and an N type layer 36 is grown on the whole surface containing the regions 35 in an epitaxial manner. The layer 36 is formed to an insular shape by thick field oxide films 41 using P type channel stop regions 42 as underlays, an N type region 37 as a charge transfer region for a CCD and an N type region 44 as a photodiode region are shaped to the insular layer 36, and these regions 37 and 44 are connected by a lead region 38 for transferring sigal charges. The whole surface is coated with a gate oxide film 39 and an opening is bored, an Mo electrode 45 is formed in the region 44 while being surrounded by a PSG film 43, and a gate electrode 40 is applied on the region 37 through the film 39 and coated similarly with the film 43.

5. 发明专利

JPS5944597B2 JPS5944597B2 - 失效
公开(公告)号：JPS5944597B2
公开(公告)日：1984-10-30
申请号：JP7056876
申请日：1976-06-15
申请人： Matsushita Electric Ind Co Ltd
发明人： ISHIKAWA OONORI , HATADA KENZO
IPC分类号： G04G17/02 , G04G17/06 , G04G21/00 , G04G99/00 , G09F9/00
CPC分类号： G04G17/02

6. 发明专利

JPS5914889B2 JPS5914889B2 - 失效
公开(公告)号：JPS5914889B2
公开(公告)日：1984-04-06
申请号：JP10529679
申请日：1979-08-17
申请人： Matsushita Electric Ind Co Ltd
发明人： UENO ATSUSHI , ISHIKAWA OONORI
IPC分类号： H01L21/302 , G03F7/00 , G03F7/20 , H01L21/027 , H01L21/3065
CPC分类号： G03F7/0035

7. 发明专利

JPS5840152B2 失效
公开(公告)号：JPS5840152B2
公开(公告)日：1983-09-03
申请号：JP7679474
申请日：1974-07-03
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ISHIKAWA OONORI , HATADA KENZO , ISHIHARA TAKESHI
IPC分类号： H01R11/01 , G04C3/00 , G04G17/02 , G04G17/06 , G04G21/00 , G04G99/00

8. 发明专利

JPS587952B2 失效
公开(公告)号：JPS587952B2
公开(公告)日：1983-02-14
申请号：JP12483275
申请日：1975-10-15
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ISHIKAWA OONORI , HATADA KENZO
IPC分类号： G04G17/02 , G04G17/06 , G04G99/00 , H05K7/02 , H05K7/14

9. 发明专利

JPS55115366A MANUFACTURING METHOD OF CHARGE TRANSFER UNIT 失效
公开(公告)号：JPS55115366A
公开(公告)日：1980-09-05
申请号：JP2158179
申请日：1979-02-26
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KAGAWA KEIICHI , ISHIKAWA OONORI , EZAKI TAKEYA
IPC分类号： H01L29/762 , H01L21/339 , H01L21/8234 , H01L29/76 , H01L29/772
摘要： PURPOSE:To decrease short circuits between gate electrodes and improve transfer properties, by coating thicker oxide films than other oxide films, on the side faces of polycrystalline Si film gate electrodes which constitute a charge transfer unit. CONSTITUTION:An SiO2 film 2 is coated on an Si substrate 1. A polycrystalline Si film doped with an impurity for electrodes is deposited on the film 2 and made into a pair of comb-shaped gate electrodes 3a, 3b by photolithography. Heat treatment is then effected to produce thick SiO2 films 2a wrapping the electrodes 3a, 3b. Dry etching is performed by CF4 gas to remove the films 2a from the exposed film 2 and the tops of the electrodes 3a, 3b and leave the films 2a only on the side faces of the electrodes. Thin SiO2 films 2b of the same thcikness as the film 2 are coated on the exposed surfaces of the electrodes 3a, 3b. Comb-shaped metal film gate electrodes 4a, 4b are coated over the edges of the electrodes 3a, 3b and on the film 2 in recesses. This results in preventing the vaporization of the impurity from the side faces of the electrodes 3a, 3b.

10. 发明专利

JPS5577782A IMAGE DISPLAY OR PHOTOSENSITIVE DEVICE AND PREPARING SAME 失效
公开(公告)号：JPS5577782A
公开(公告)日：1980-06-11
申请号：JP15240278
申请日：1978-12-08
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ISHIKAWA OONORI
IPC分类号： G09F9/30 , G02F1/1335 , G02F1/136 , G02F1/1368 , G09F9/00

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